Patent application number | Description | Published |
20100264422 | Thin film semiconductor device, display device using such thin film semiconductor device and manufacturing method thereof - A thin film semiconductor device formed as integrated circuits on an insulating substrate with bottom gate type thin film transistors stacked with gate electrodes, a gate insulating film and a semiconductor thin film in the order from below upward. The gate electrodes comprise metallic materials with thickness less than 100 nm. The gate insulating film has a thickness thicker than the gate electrodes. The semiconductor thin film comprises polycrystalline silicon crystallized by a laser beam. By reducing thickness of metallic gate electrodes, thermal capacity becomes small and difference in thermal condition on the metallic gate electrodes and on the insulating substrate made of glass or the like becomes small. This invention relates to the task of uniforming and optimizing recrystallization by a laser anneal treatment provided for the semiconductor thin film which works as an active layer of the bottom gate type thin film transistors. | 10-21-2010 |
20130045555 | THIN FILM SEMICONDUCTOR DEVICE, DISPLAY DEVICE USING SUCH THIN FILM SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A thin film semiconductor device formed as integrated circuits on an insulating substrate with bottom gate type thin film transistors stacked with gate electrodes, a gate insulating film and a semiconductor thin film in the order from below upward. The gate electrodes comprise metallic materials with thickness less than 100 nm. The gate insulating film has a thickness thicker than the gate electrodes. The semiconductor thin film comprises polycrystalline silicon crystallized by a laser beam. By reducing thickness of metallic gate electrodes, thermal capacity becomes small and difference in thermal condition on the metallic gate electrodes and on the insulating substrate made of glass or the like becomes small. This invention relates to the task of uniforming and optimizing recrystallization by a laser anneal treatment provided for the semiconductor thin film which works as an active layer of the bottom gate type thin film transistors. | 02-21-2013 |
20140048814 | FILM SEMICONDUCTOR DEVICE, DISPLAY DEVICE USING SUCH THIN FILM SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A thin film semiconductor device formed as integrated circuits on an insulating substrate with bottom gate type thin film transistors stacked with gate electrodes, a gate insulating film and a semiconductor thin film in the order from below upward. The gate electrodes comprise metallic materials with thickness less than 100 nm. The gate insulating film has a thickness thicker than the gate electrodes. The semiconductor thin film comprises polycrystalline silicon crystallized by a laser beam. By reducing thickness of metallic gate electrodes, thermal capacity becomes small and difference in thermal condition on the metallic gate electrodes and on the insulating substrate made of glass or the like becomes small. This invention relates to the task of uniforming and optimizing recrystallization by a laser anneal treatment provided for the semiconductor thin film which works as an active layer of the bottom gate type thin film transistors. | 02-20-2014 |
Patent application number | Description | Published |
20090189650 | PLL circuit including voltage controlled oscillator having voltage-current conversion circuit - A Phase-Locked Loop (PLL) circuit includes a voltage-controlled oscillator. The voltage-controlled oscillator includes a voltage-current conversion circuit and a current-controlled oscillation circuit. The voltage-current conversion circuit includes an input transistor having a gate terminal connecting a control voltage, a first transistor connected in series to the input transistor, a second transistor connected as a current-mirror to the first transistor, to generate a control current, and a current source connected in parallel to the first transistor. The current-controlled oscillation circuit oscillates at a frequency according to the control current. | 07-30-2009 |
20090261909 | Voltage-controlled oscillator including plurality of delay cells - A voltage-controlled oscillator includes a delay circuit. The delay circuit includes a first buffer inverter which receives one of the differential input signal and outputs an other of the differential output signal, a second buffer inverter which receives the other of the differential input signal and outputs the one of the differential output signal, a first latch inverter which receives the one of the differential output signal, and includes an output connected to an output of the first buffer inverter, and a second latch inverter which receives the other of the differential output signal, and includes an output connected to an output of the second buffer inverter. The first latch inverter and the first buffer inverter receive a current produced from different voltage-current conversion circuits. | 10-22-2009 |
20100182060 | Digital phase-locked loop - A digital phase-locked loop circuit includes: a first counter which counts a first clock; a second counter which counts third clocks into which a second clock is divided; a first phase detector which detects a relative phase difference between the first and the third clocks according to a first comparison result that clocks in which the third clock is delayed are compared with the first clock and a second comparison result that clocks in which the first clock is delayed are compared with the third clock; a second phase detector which measures the period of the second clock; a phase error calculating unit which calculates a phase difference between the first and the third clocks according to the value that the result detected by the first phase detector is normalized by the result detected by the second phase detector and the count values of the first and the second counters; and a DCO which outputs the second clock according to the result calculated by the phase error calculating unit. | 07-22-2010 |
20110050312 | MULTI-PHASE CLOCK GENERATION CIRCUIT - A multi-phase clock generation circuit including a phase interpolation circuit that generates and outputs an interpolation signal based on first and second clock signals, the interpolation signal interpolating a phase between output clock signals corresponding to the first and the second clock signals, and a control circuit that generates a first control signal to adjust a phase of the interpolation signal and outputs the first control signal to the phase interpolation circuit, in which the control circuit includes a timing detection circuit that detects a timing of a change in a logic value of the interpolation signal, and a control signal generation circuit that generates the first control signal according to a detection result in the timing detection circuit. | 03-03-2011 |
Patent application number | Description | Published |
20080237711 | MANUFACTURING METHOD OF THIN-FILM SEMICONDUCTOR APPARATUS AND THIN-FILM SEMICONDUCTOR APPARATUS - A manufacturing method of a thin-film semiconductor apparatus and a thin-film semiconductor apparatus, in which a semiconductor thin film is spot-irradiated with an energy beam in the presence of n-type or p-type impurity to form a shallow diffusion layer in which the impurity is diffused only in a surface layer of the semiconductor thin film. | 10-02-2008 |
20080241981 | THIN FILM SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - A thin film semiconductor device is provided that includes a semiconductor thin film and a gate electrode. The semiconductor thin film has an active region turned into a polycrystalline region through irradiation with an energy beam. The gate electrode is provided to traverse the active region. In a channel part that is the active region overlapping with the gate electrode, a crystalline state is changed cyclically in a channel length direction, and areas each having a substantially same crystalline state traverse the channel part. | 10-02-2008 |
20100051830 | SEMICONDUCTOR PROCESSING APPARATUS AND SEMICONDUCTOR PROCESSING METHOD - A semiconductor processing apparatus includes: a stage on which a substrate having a semiconductor film to be processed is to be mounted; a supply section that supplies a plurality of energy beams onto the semiconductor film mounted on the stage in such a way that irradiation points of the energy beams are aligned at given intervals; and a control section that moves the plurality of energy beams and the substrate relative to each other in a direction not in parallel to alignment of the irradiation points of the plurality of energy beams supplied by the supply section, and scans the semiconductor film with the irradiation points of the plurality of energy beams in parallel to thereby control a heat treatment on the semiconductor film. | 03-04-2010 |
20100093112 | LASER ANNEALING METHOD AND LASER ANNEALING APPARATUS - An embodiment of the invention provides a laser annealing method, including the steps of radiating a laser beam to an amorphous film on a substrate while scanning the laser beam for the amorphous film, crystallizing the amorphous film, detecting a light quantity of laser beam reflected from the substrate and a scanning speed of the laser beam while the radiation and the scanning of the laser beam are carried out for the amorphous film, and controlling a radiation level and the scanning speed of the laser beam based on results of comparison of the light quantity of laser beam reflected from the substrate, and the scanning speed of the laser beam with respective preset references. | 04-15-2010 |
20110033999 | DOPING METHOD, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE - A doping method includes: a first step of depositing a material solution containing an antimony compound containing elements selected from the group consisting essentially of hydrogen, nitrogen, oxygen, and carbon together with antimony to a surface of a substrate; a second step of drying the material solution to form an antimony compound layer on the substrate; and a third step of performing heat treatment so that antimony in the antimony compound layer is diffused into the substrate. | 02-10-2011 |