Patent application number | Description | Published |
20090004370 | Metal Inks, Methods of Making the Same, and Methods for Printing and/or Forming Metal Films - Printable metal formulations, methods of making the formulations, and methods of coating or printing thin films from metal ink precursors are disclosed. The metal formulation generally includes one or more Group 4, 5, 6, 7, 8, 9, 10, 11, or 12 metal salts or metal complexes, one or more solvents adapted to facilitate coating and/or printing of the formulation, and one or more optional additives that form (only) gaseous or volatile byproducts upon reduction of the metal salt or metal complex to an elemental metal and/or alloy thereof. The formulation may be made by combining the metal salt(s) or metal complex(es) and the solvent(s), and dissolving the metal salt(s) or metal complex(es) in the solvent(s) to form the formulation. Thin films may be made by coating or printing the metal formulation on a substrate; removing the solvents to form a metal-containing precursor film; and reducing the metal-containing precursor film. | 01-01-2009 |
20090053536 | Compositions and Methods for Forming a Semiconducting and/or Silicon-Containing Film, and Structures Formed Therefrom - Compositions, inks and methods for forming a patterned silicon-containing film and patterned structures including such a film. The composition generally includes (a) passivated semiconductor nanoparticles and (b) first and second cyclic Group IVA compounds in which the cyclic species predominantly contains Si and/or Ge atoms. The ink generally includes the composition and a solvent in which the composition is soluble. The method generally includes the steps of ( | 02-26-2009 |
20100022078 | Aluminum Inks and Methods of Making the Same, Methods for Depositing Aluminum Inks, and Films Formed by Printing and/or Depositing an Aluminum Ink - Aluminum metal ink compositions, methods of forming such compositions, and methods of forming aluminum metal layers and/or patterns are disclosed. The ink composition includes an aluminum metal precursor and an organic solvent. Conductive structures may be made using such ink compositions by printing or coating the aluminum precursor ink on a substrate (decomposing the aluminum metal precursors in the ink) and curing the composition. The present aluminum precursor inks provide aluminum films having high conductivity, and reduce the number of inks and printing steps needed to fabricate printed, integrated circuits. | 01-28-2010 |
20100244133 | Printed Dopant Layers - A method for making an electronic device, such as a MOS transistor, including the steps of forming a plurality of semiconductor islands on an electrically functional substrate, printing a first dielectric layer on or over a first subset of the semiconductor islands and optionally a second dielectric layer on or over a second subset of the semiconductor islands, and annealing. The first dielectric layer contains a first dopant, and the (optional) second dielectric layer contains a second dopant different from the first dopant. The dielectric layer(s), semiconductor islands and substrate are annealed sufficiently to diffuse the first dopant into the first subset of semiconductor islands and, when present, the second dopant into the second subset of semiconductor islands. | 09-30-2010 |
20110104877 | Compositions and Methods for Forming a Semiconducting and/or Silicon-Containing Film, and Structures Formed Therefrom - Compositions, inks and methods for forming a patterned silicon-containing film and patterned structures including such a film. The composition generally includes (a) passivated semiconductor nanoparticles and (b) first and second cyclic Group IVA compounds in which the cyclic species predominantly contains Si and/or Ge atoms. The ink generally includes the composition and a solvent in which the composition is soluble. The method generally includes the steps of (1) printing the composition or ink on a substrate to form a pattern, and (2) curing the patterned composition or ink. In an alternative embodiment, the method includes the steps of (i) curing either a semiconductor nanoparticle composition or at least one cyclic Group IVA compound to form a thin film, (ii) coating the thin film with the other, and (iii) curing the coated thin film to form a semiconducting thin film. The semiconducting thin film includes a sintered mixture of semiconductor nanoparticles in hydrogenated, at least partially amorphous silicon and/or germanium. The thin film exhibits improved conductivity, density, adhesion and/or carrier mobility relative to an otherwise identical structure made by an identical process, but without either the semiconductor nanoparticles or the hydrogenated Group IVA element polymer. The present invention advantageously provides semiconducting thin film structures having qualities suitable for use in electronics applications, such as display devices or RF ID tags, while enabling high-throughput printing processes that form such thin films in seconds or minutes, rather than hours or days as with conventional photolithographic processes. | 05-05-2011 |
20130252407 | SILICON POLYMERS, METHODS OF POLYMERIZING SILICON COMPOUNDS, AND METHODS OF FORMING THIN FILMS FROM SUCH SILICON POLYMERS - Compositions and methods for controlled polymerization and/or oligomerization of hydrosilanes compounds including those of the general formulae Si | 09-26-2013 |
20140094004 | Printed Dopant Layers - A method for making an electronic device, such as a MOS transistor, including the steps of forming a plurality of semiconductor islands on an electrically functional substrate, printing a first dielectric layer on or over a first subset of the semiconductor islands and optionally a second dielectric layer on or over a second subset of the semiconductor islands, and annealing. The first dielectric layer contains a first dopant, and the (optional) second dielectric layer contains a second dopant different from the first dopant. The dielectric layer(s), semiconductor islands and substrate are annealed sufficiently to diffuse the first dopant into the first subset of semiconductor islands and, when present, the second dopant into the second subset of semiconductor islands. | 04-03-2014 |
Patent application number | Description | Published |
20120041246 | NANOWIRE CATALYSTS - Nanowires useful as heterogeneous catalysts are provided. The nanowire catalysts are useful in a variety of catalytic reactions, for example, the oxidative coupling of methane to ethylene. Related methods for use and manufacture of the same are also disclosed. | 02-16-2012 |
20130023709 | CATALYSTS FOR PETROCHEMICAL CATALYSIS - Metal oxide catalysts comprising various dopants are provided. The catalysts are useful as heterogenous catalysts in a variety of catalytic reactions, for example, the oxidative coupling of methane to C2 hydrocarbons such as ethane and ethylene. Related methods for use and manufacture of the same are also disclosed. | 01-24-2013 |
20130158322 | POLYMER TEMPLATED NANOWIRE CATALYSTS - Nanowires useful as heterogeneous catalysts are provided. The nanowire catalysts are prepared by polymer templated methods and are useful in a variety of catalytic reactions, for example, the oxidative coupling of methane to ethane and/or ethylene. Related methods for use and manufacture of the same are also disclosed. | 06-20-2013 |
20130165728 | NANOWIRE CATALYSTS AND METHODS FOR THEIR USE AND PREPARATION - Nanowires useful as heterogeneous catalysts are provided. The nanowire catalysts are useful in a variety of catalytic reactions, for example, the oxidative coupling of methane to C2 hydrocarbons. Related methods for use and manufacture of the same are also disclosed. | 06-27-2013 |
20130253248 | METHOD FOR ISOLATION OF NANOMATERIALS - Methods for isolation and/or purification of nanomaterials, such as nanowires, are provided. The disclosed methods include isolation of nanomaterials via a filter press and are amenable to large-scale production of nanomaterials. Related methods for isolation, purification and/or doping of nanomaterials are also provided. | 09-26-2013 |
20140121433 | CATALYTIC FORMS AND FORMULATIONS - Catalytic forms and formulations are provided. The catalytic forms and formulations are useful in a variety of catalytic reactions, for example, the oxidative coupling of methane. Related methods for use and manufacture of the same are also disclosed. | 05-01-2014 |
20140274671 | CATALYSTS FOR PETROCHEMICAL CATALYSIS - Metal oxide catalysts comprising various dopants are provided. The catalysts are useful as heterogenous catalysts in a variety of catalytic reactions, for example, the oxidative coupling of methane to C2 hydrocarbons such as ethane and ethylene. Related methods for use and manufacture of the same are also disclosed. | 09-18-2014 |
20150073192 | CATALYSTS FOR PETROCHEMICAL CATALYSIS - Metal oxide catalysts comprising various dopants are provided. The catalysts are useful as heterogenous catalysts in a variety of catalytic reactions, for example, the oxidative coupling of methane to C2 hydrocarbons such as ethane and ethylene. Related methods for use and manufacture of the same are also disclosed. | 03-12-2015 |
20150087875 | NANOWIRE CATALYSTS AND METHODS FOR THEIR USE AND PREPARATION - Nanowires useful as heterogeneous catalysts are provided. The nanowire catalysts are useful in a variety of catalytic reactions, for example, the oxidative coupling of methane to C2 hydrocarbons. Related methods for use and manufacture of the same are also disclosed. | 03-26-2015 |