Kouhei Miura
Kouhei Miura, Osaka JP
Patent application number | Description | Published |
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20080265258 | Group III Nitride Semiconductor Device and Epitaxial Substrate - Affords Group III nitride semiconductor devices in which the leakage current from the Schottky electrode can be decreased. In a high electron mobility transistor | 10-30-2008 |
20080315209 | Group III Nitride Semiconductor Device and Epitaxial Substrate - Affords a Group III nitride semiconductor device having a structure that can improve the breakdown voltage. A Schottky diode ( | 12-25-2008 |
20090001412 | PHOTODETECTOR AND PRODUCTION METHOD THEREOF - The invention offers a photodetector that has an N-containing InGaAs-based absorption layer having a sensitivity in the near-infrared region and that suppresses the dark current and a production method thereof. The photodetector is provided with an InP substrate | 01-01-2009 |
20090057721 | SEMICONDUCTOR DEVICE, EPITAXIAL WAFER, AND METHOD OF MANUFACTURING THE SAME - A manufacturing method and a semiconductor device produced by the method are provided, in which the semiconductor device can easily be manufactured while the hydrogen concentration is decreased. An N-containing InGaAs layer | 03-05-2009 |
20090189186 | Group III Nitride Semiconductor Device and Epitaxial Substrate - Affords Group III nitride semiconductor devices in which the leakage current from the Schottky electrode can be reduced. In a high electron mobility transistor | 07-30-2009 |
20100230723 | High Electron Mobility Transistor, Field-Effect Transistor, and Epitaxial Substrate - Affords high electron mobility transistors having a high-purity channel layer and a high-resistance buffer layer. A high electron mobility transistor ( | 09-16-2010 |
Kouhei Miura, Osaka-Shi JP
Patent application number | Description | Published |
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20090189190 | High Electron Mobility Transistor, Field-Effect Transistor, Epitaxial Substrate, Method of Manufacturing Epitaxial Substrate, and Method of Manufacturing Group III Nitride Transistor - Affords high electron mobility transistors having a high-purity channel layer and a high-resistance buffer layer. A high electron mobility transistor | 07-30-2009 |
20090194796 | Vertical Gallium Nitride Semiconductor Device and Epitaxial Substrate - Affords epitaxial substrates for vertical gallium nitride semiconductor devices that have a structure in which a gallium nitride film of n-type having a desired low carrier concentration can be provided on a gallium nitride substrate of n type. A gallium nitride epitaxial film ( | 08-06-2009 |
20110147707 | DETECTION DEVICE, PHOTODIODE ARRAY, AND METHOD FOR MANUFACTURING THE SAME - The present invention provides an image pickup device used to capture an image of an object by receiving light in a near infrared region reflected from the object. The image pickup device includes semiconductor light-receiving elements each having a light-receiving layer with a band gap wavelength of 1.65 to 3.0 μm. | 06-23-2011 |