Patent application number | Description | Published |
20080197346 | Nitrogen-containing heteroaromatic ligand-transition metal complexes, buffer layer comprising the complexes and organic thin film transistor comprising the buffer layer - Example embodiments provide a nitrogen-containing heteroaromatic ligand-transition metal complex, a buffer layer including the complex, which may improve the injection and transport of electrical charges, an organic thin film transistor and an electronic device including the buffer layer, in which the injection of electrons or holes and the transport of charges between layers are accelerated, thereby improving the efficiency thereof, and methods of manufacturing the same. | 08-21-2008 |
20080299382 | Functionalized metal nanoparticle, buffer layer including the same and electronic device including the buffer layer - Disclosed herein is a functionalized metal nanoparticle, a buffer layer including the functionalized metal nanoparticle, and an electronic device including the buffer layer. The buffer layer including the functionalized metal nanoparticle according to example embodiments may improve the injection of electrons or holes and the charge mobility between layers in the electronic device, may form ohmic contacts, and may improve the selectivity between electrodes and the buffer layer at the time of forming the buffer layer on the electrodes, thereby improving the efficiency of the electronic device. | 12-04-2008 |
20090032809 | Organic thin film transistor and method of manufacturing the same - Disclosed are an organic thin film transistor and a method of manufacturing the same, in which a crystalline organic binder layer is on the surface of an organic insulating layer and source/drain electrodes or on the surface of the source/drain electrodes. The organic thin film transistor may be improved in two-dimensional geometric lattice matching and interface stability at the interface between the organic semiconductor and the insulating layer or at the interface between the organic semiconductor layer and the electrode, thereby improving the electrical properties of the device. | 02-05-2009 |
20090045396 | Composition for forming passivation layer and organic thin film transistor comprising the passivation layer - Disclosed herein is a composition including a perfluoropolyether derivative, a photosensitive polymer or a copolymer thereof, and a photocuring agent, a passivation layer, organic thin film transistor, and electronic device including the same, a method of forming the passivation layer and methods of fabricating the organic thin film transistor and electronic device. The organic thin film transistor may prevent or reduce oxygen and moisture from infiltrating thereinto, and thus may prevent or reduce the degradation of the performance thereof caused by ambient air, prevent or reduce the deterioration thereof, and may more easily be formed into a pattern, thereby exhibiting characteristics suitable for use in electronics. | 02-19-2009 |
20090189150 | Organic semiconducting copolymer and organic electronic device including the same - An organic semiconducting copolymer according to example embodiments may be represented by Formula 1 below: | 07-30-2009 |
20090201396 | Methods for operating image sensors - A method for operating image sensors is provided. The method for operating image sensors includes maintaining a charge transmission unit which transfers charges generated in a photoelectric conversion unit by responding to incident light to a charge detection unit in an inactive state; and toggling the charge transmission unit between an active state and an inactive state while a reset unit resets the charge detection unit, wherein the toggling is repeated multiple times while a reset unit which resets the charge detection unit is maintained in active state. | 08-13-2009 |
20100065830 | Organic thin film transistor and method for fabricating the same - Disclosed herein are a method for fabricating an organic thin film transistor, including treating the surfaces of a gate insulating layer and source/drain electrodes with a self-assembled monolayer (SAM)-forming compound through a one-pot reaction, and an organic thin film transistor fabricated by the method. According to example embodiments, the surface-treatment of the gate insulating layer and the source/drain electrodes may be performed in a single vessel through a single process. | 03-18-2010 |
20100200842 | Surface modifying agent, laminated structure and transistor including the same, and method of manufacturing the laminated structure - Disclosed is a surface modifying agent including a compound having an ethynyl group at one terminal end, a laminated structure manufactured using the surface modifying agent, a method of manufacturing the laminated structure, and a transistor including the same. | 08-12-2010 |
20100248421 | Method of forming organic thin film and method of manufacturing semiconductor device using the same - Provided are a method of forming an organic semiconductor thin film and a method of manufacturing a semiconductor device using the. According to example embodiments, a method of forming an organic semiconductor thin film at least may include exposing a lower substrate coated with an organic semiconductor solution using a method of generating a shearing stress to the portion of the lower substrate coated with the organic semiconductor solution. A guide structure may be formed adjacent to the organic semiconductor solution. | 09-30-2010 |
20110001131 | Organic semiconductor polymer, transistor including an organic semiconductor polymer and methods of fabricating the same - An organic semiconductor polymer, a transistor including an organic semiconductor polymer and methods of fabricating the same are provided, the organic semiconductor polymer including an aromatic or heteroaromatic main chain and at least one of a fluoro or a perfluoroalkyl at a polymer terminal end. | 01-06-2011 |
20120018713 | Nitrogen-containing heteroaromatic ligand-transition metal complexes, buffer layer comprising the complexes and organic thin film transistor comprising the buffer layer - Example embodiments provide a nitrogen-containing heteroaromatic ligand-transition metal complex, a buffer layer including the complex, which may improve the injection and transport of electrical charges, an organic thin film transistor and an electronic device including the buffer layer, in which the injection of electrons or holes and the transport of charges between layers are accelerated, thereby improving the efficiency thereof, and methods of manufacturing the same. | 01-26-2012 |
20120083069 | ORGANIC THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME - Disclosed are an organic thin film transistor and a method of manufacturing the same, in which a crystalline organic binder layer is on the surface of an organic insulating layer and source/drain electrodes or on the surface of the source/drain electrodes. The organic thin film transistor may be improved in two-dimensional geometric lattice matching and interface stability at the interface between the organic semiconductor and the insulating layer or at the interface between the organic semiconductor layer and the electrode, thereby improving the electrical properties of the device. | 04-05-2012 |
20120104377 | ORGANIC THIN FILM TRANSISTOR AND METHOD FOR FABRICATING THE SAME - Disclosed herein are a method for fabricating an organic thin film transistor, including treating the surfaces of a gate insulating layer and source/drain electrodes with a self-assembled monolayer (SAM)-forming compound through a one-pot reaction, and an organic thin film transistor fabricated by the method. According to example embodiments, the surface-treatment of the gate insulating layer and the source/drain electrodes may be performed in a single vessel through a single process. | 05-03-2012 |
20130100674 | LIGHTING DEVICE - A lighting device may be provided to include a heat sink which includes a receiving recess and a top surface including a hole; a light source module which includes a substrate disposed on the heat sink, a light emitting device disposed on the substrate and a pad disposed on the substrate; a power supplier which is disposed in the receiving recess of the heat sink and includes a projection outputting a power signal for driving the light source module; and a connector which is coupled to the hole of the heat sink, includes a contacting part electrically connected to the pad of the light source module, and is electrically connected to the projection of the power supplier. | 04-25-2013 |
20130293084 | LIGHTING DEVICE - A lighting device may be provided that includes: a heat sink which includes a base and a member extending from the base; a light source module which is disposed on a lateral surface of the member; and a reflector which is disposed on the member and has a disposition recess exposing the light source module, wherein the at least two light source modules are provided and the light source module includes a terminal plate which electrically connects the at least two light source modules, and wherein the terminal plate is disposed on the reflector. | 11-07-2013 |
20140240994 | LIGHTING DEVICE - A lighting device includes a heat sink including a first heat radiation part and a second heat radiation part; a light source module including a substrate disposed on the first heat radiation part, and a light emitting device disposed on the substrate; and a power supply unit which is disposed within the second heat radiation part and supplies power to the light source module. The second heat radiation part includes an inner portion receiving the power supply unit therewithin, an outer portion enclosing the inner portion, and a first receiver disposed between the inner portion and the outer portion. The first heat radiation part includes an upper portion which is disposed on the inner portion of the second heat radiation part and on which the substrate of the light source module is disposed, and a lower portion disposed in the first receiver of the second heat radiation part. | 08-28-2014 |
20140301080 | LIGHTING DEVICE - A lighting device may be provided that includes: a heat sink; a light source module which is disposed on the heat sink, includes a substrate having at least one hole, and includes a plurality of light emitting devices disposed on a top surface of the substrate; a power supply unit which is disposed within the heat sink and includes a support plate and a plurality of parts disposed on the support plate; and a soldering portion which connects the substrate and the support plate. The support plate includes an extended substrate which is disposed in the hole of the substrate. The extended substrate includes a through-portion which has passed through the hole of the substrate. The soldering portion electrically connects the through-portion of the extended substrate and the top surface of the substrate. | 10-09-2014 |