Van Den Hoek
Rolf Martijn Van Den Hoek, Dordrecht NL
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20100165996 | SYSTEM AND METHOD FOR EXCHANGING DATA BETWEEN A FIRST DATA PROCESSING SYSTEM AND A SECOND DATA PROCESSING SYSTEM VIA AN AT LEAST PARTLY PUBLIC COMMUNICATION NETWORK - Communication system for exchanging data, via a communication network at least partly accessible to the public, between a first data processing system and a second data processing system, includes a first data processing system adapted to communicate according to a communication protocol, wherein the first data processing system is linked via a first coupling to the communication network at least partly accessible to the public, and a second data processing system, includes at least one data processing system, adapted to communicate according to the communication protocol, wherein the second data processing system is linked via a second coupling to the communication network at least partly accessible to the public, characterized in that at least one of the couplings comprises a data connection inaccessible to data traffic according to the communication protocol. | 07-01-2010 |
Wilbert Van Den Hoek, Saratoga, CA US
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20090286381 | Protective Layer To Enable Damage Free Gap Fill - In-situ semiconductor process that can fill high aspect ratio (typically at least 6:1, for example 7:1 or higher), narrow width (typically sub 0.13 micron, for example 0.1 micron or less) gaps without damaging underlying features and little or no incidence of voids or weak spots is provided. A protective layer is deposited to protect underlying features in regions of the substrate having lower feature density so that unwanted material may be removed from regions of the substrate having higher feature density. This protective layer may deposits thicker on a low density feature than on a high density feature and may be deposited using a PECVD process or low sputter/deposition ratio HDP CVD process. This protective layer may also be a metallic oxide layer that is resistant to fluorine etching, such as zirconium oxide (ZrO | 11-19-2009 |
20120214666 | WET CHEMICAL METHOD OF FORMING STABLE PiPd DIESEL OXIDATION - A nano-particle comprising: an interior region comprising a mixed-metal oxide; and an exterior surface comprising a pure metal. In some embodiments, the mixed-metal oxide comprises aluminum oxide and a metallic pinning agent, such as palladium, copper, molybdenum, or cobalt. In some embodiments, the pure metal at the exterior surface is the same as the metallic pinning agent in the mixed-metal oxide in the interior region. In some embodiments, a catalytic nano-particle is bonded to the pure metal at the exterior surface. In some embodiments, the interior region and the exterior surface are formed using a plasma gun. In some embodiments, the interior region and the exterior surface are formed using a wet chemistry process. In some embodiments, the catalytic nano-particle is bonded to the pure metal using a plasma gun. In some embodiments, the catalytic nano-particle is bonded to the pure metal using a wet chemistry process. | 08-23-2012 |
20140249021 | WET CHEMICAL AND PLASMA METHODS OF FORMING STABLE PTPD CATALYSTS - A nano-particle comprising: an interior region comprising a mixed-metal oxide; and an exterior surface comprising a pure metal. In some embodiments, the mixed-metal oxide comprises aluminum oxide and a metallic pinning agent, such as palladium, copper, molybdenum, or cobalt. In some embodiments, the pure metal at the exterior surface is the same as the metallic pinning agent in the mixed-metal oxide in the interior region. In some embodiments, a catalytic nano-particle is bonded to the pure metal at the exterior surface. In some embodiments, the interior region and the exterior surface are formed using a plasma gun. In some embodiments, the interior region and the exterior surface are formed using a wet chemistry process. In some embodiments, the catalytic nano-particle is bonded to the pure metal using a plasma gun. In some embodiments, the catalytic nano-particle is bonded to the pure metal using a wet chemistry process. | 09-04-2014 |
Willibrordus G. Van Den Hoek, Saratoga, CA US
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20090188707 | Method and Apparatus for Manufacture of Via Disk - Aluminum filled via disks are manufactured utilizing a plurality of drilled substrates placed into a metal can in a stacked, interdisposed assembly with a corresponding number of graphite molds. Aluminum infiltration ingots are added and the can is heated to a temperature to melt the ingots. The molten aluminum is pressurized so that it flows into the vias. The substrates are then cooled, removed from the can, separated from between the graphite molds, and the flat surface faces are ground and polished to expose the filled vias. | 07-30-2009 |
Willibrordus Gerardus Van Den Hoek, Saratoga, CA US
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20140246740 | IMPLANTATION OF GASEOUS CHEMICALS INTO CAVITIES FORMED IN INTERMEDIATE DIELECTRICS LAYERS FOR SUBSEQUENT THERMAL DIFFUSION RELEASE - The present invention generally relates to methods for increasing the lifetime of MEMS devices by reducing the landing velocity on switching by introducing gas into the cavity surrounding the switching element of the MEMS device. The gas is introduced using ion implantation into a cavity close to the cavity housing the switching element and connected to that cavity by a channel through which the gas can flow from one cavity to the other. The implantation energy is chosen to implant many of the atoms close to the inside roof and floor of the cavity so that on annealing those atoms diffuse into the cavity. The gas provides gas damping which reduces the kinetic energy of the switching MEMS device which then should have a longer lifetime. | 09-04-2014 |
Willibrordus Gerardus Maria Van Den Hoek, Saratoga, CA US
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20150079805 | TWO STEP METHOD OF RAPID CURING A SEMICONDUCTOR POLYMER LAYER - A semiconductor device and method of making the semiconductor device is described. A semiconductor die is provided. A polymer layer is formed over the semiconductor die. A via is formed in the polymer layer. The polymer layer is crosslinked in a first process. The polymer layer is thermally cured in a second process. The polymer layer can comprise polybenzoxazoles (PBO), polyimide, benzocyclobutene (BCB), or siloxane-based polymers. A surface of the polymer layer can be crosslinked by a UV bake to control a slope of the via during subsequent curing. The second process can further comprise thermally curing the polymer layer using conduction, convection, infrared, or microwave heating. The polymer layer can be thermally cured by increasing a temperature of the polymer at a rate greater than or equal to 10 degrees Celsius per minute, and can be completely cured in less than or equal to 60 minutes. | 03-19-2015 |