Nitta, US
Bhimashankar V. Nitta, Ellington, CT US
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20100227239 | METHOD AND APPARATUS FOR OPERATING A FUEL CELL IN COMBINATION WITH AN ABSORPTION CHILLER - A standard phosphoric acid fuel cell power plant ( | 09-09-2010 |
20120164548 | METHOD AND APPARATUS FOR OPERATING A FUEL CELL IN COMBINATION WITH AN ABSORPTION CHILLER - A standard phosphoric acid fuel cell power plant has its heat exchanger removed such that a higher temperature coolant flow can be directed from the system to the generator of an absorption chiller to obtain improved efficiency in the chiller. In one embodiment, the higher temperature coolant may flow directly from the fuel cell stack to the generator and after passing therethrough, it is routed back to the high temperature coolant loop. In another embodiment, the higher temperature coolant is made to transfer some of its heat to a lower temperature coolant and the lower temperature coolant is than made to flow directly to the generator and back to the lower temperature coolant loop. In the first embodiment, either a double effect absorption chiller or a single effect absorption chiller is used, while in the second embodiment a single effect absorption chiller is used. | 06-28-2012 |
Bryston Nitta, Kirkland, WA US
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20140283054 | Automatic Fraudulent Digital Certificate Detection - A computing device analyzes digital certificates received from various different sites (e.g., accessed via the Internet or other network) in order to automatically detect fraudulent digital certificates. The computing device maintains a record of the digital certificates it receives from these various different sites. A certificate screening service operating remotely from the computing device also accesses these various different sites and maintains a record of the digital certificates that the service receives from these sites. In response to a request to access a target site the computing device receives a current digital certificate from the target site. The computing device determines whether the current digital certificate is genuine or fraudulent based on one or more of previously received digital certificates for the target site, confirmation certificates received from the certificate screening service, and additional characteristics of the digital certificates and/or the target site. | 09-18-2014 |
Bryston Mitsuo Nitta, Redmond, WA US
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20160036593 | ADVISING CLIENTS ABOUT CERTIFICATE AUTHORITY TRUST - In many information security scenarios, a certificate issued by a certificate authority may be presented to a client in order to assert a trust level of a certificated item, such as a message or a web page. However, due to a decentralized structure and incomplete coordination among certificate authorities, the presence and exploitation of security vulnerabilities to issue untrustworthy certificates may be difficult to determine, particularly for an individual client. Presented herein are techniques for advising clients of the reputations of respective certificate authorities by evaluating the certificates issued by such certificate authorities, such as the number and types of domains certified by the certificate; the number and pattern of certificates issued for the domain; and the certification techniques used to issue the certificates. Such evaluation enables a determination of a certificate authority trust level that may be distributed to the clients in a certificate authority trust set. | 02-04-2016 |
Daisuke Nitta, Plano, TX US
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20140341061 | MANAGEMENT APPARATUS AND METHOD FOR IDENTIFYING CANDIDATE FOR IMPROVING COMMUNICATION QUALITY; APPARATUS AND METHOD FOR IDENTIFYING COMMUNICATION PATH; NON-TRANSITORY COMPUTER-READABLE STORAGE MEDIUM STORING SUCH PROGRAMS; AND WIRELESS COMMUNICATION SYSTEM - A management apparatus that identifies a candidate for improving communication quality in a wireless communication system including a base station and a mobile station, the management apparatus comprising: an obtainer that obtains measured communication quality information and positional information from the mobile station; a communication quality estimator that estimates a communication quality based on the positional information obtained from the mobile station; a communication path determiner that identifies a communication path using the estimated communication quality estimated and the measured communication quality information; and a communication quality improvement candidate determiner that identifies the candidate for improving communication quality related to the communication path determined, the candidate being based on communication quality. A method and a program for identifying a candidate for improving communication quality, an apparatus, a method, and a program for determining a communication path, and a wireless communication system are also provided. | 11-20-2014 |
20150351090 | BASE STATION APPARATUS, MOBILE STATION APPARATUS AND CIRCUIT, AND CHANNEL SWITCHING METHOD - A base station apparatus including a plurality of communication units which communicate through a different plurality of communication channels with an upper layer apparatus of the base station apparatus, a base station information acquisition unit which acquires base station information relating to the state of the base station apparatus, a channel selection unit which selects any of the plurality of communication channels in accordance with base station information, and a channel switching unit which dynamically switches the channel which is used for transmission of traffic of the mobile station apparatus to a channel which is selected by the channel selection unit. | 12-03-2015 |
Hiro Nitta, Tucson, AZ US
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20150346206 | Method of Identifying Treatment Responsive Non-Small Cell Lung Cancer Using Anaplastic Lymphoma Kinase (ALK) as a Marker - Disclosed herein are methods for identifying a subject as having NSCLC that is predicted or is likely to respond to treatment with an ALK inhibitor, for example crizotinib. The methods include identifying a sample including NSCLC tumor cells as ALK-positive or ALK-negative using immunohistochemistry (IBC) and scoring methods disclosed herein. A subject is identified as having NSCLC likely to respond to treatment with an ALK inhibitor if the sample is identified as ALK-positive and is identified as having NSCLC not likely to respond to treatment with an ALK inhibitor if the sample is identified as ALK-negative. According to certain embodiments of the methods, subjects predicted to respond to an ALK inhibitor may then be treated with an ALK inhibitor such as crizotinib. | 12-03-2015 |
20150346210 | MULTIPLEX ASSAY FOR IMPROVED SCORING OF TUMOR TISSUES STAINED FOR PD-L1 - Multiplex assays for improved scoring of tumor tissues stained with PD-L1 featuring PD-L1 staining in a first color plus staining of one or more differentiating markers, such as a marker specific for tumor cells and a marker specific for immune cells, are disclosed. The differentiation between the tumor cells and immune cells may improve the ease of scoring, the accuracy and speed of scoring, and the reproducibility of scoring of PD-L1 positive samples for therapy purposes. | 12-03-2015 |
Hiro Nitta, Oro Valley, AZ US
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20120237930 | METHOD OF ANALYZING CHROMOSOMAL TRANSLOCATIONS AND A SYSTEM THEREFORE - The present disclosure relates to systems and methods for analyzing chromosomal translocations, and in particular to analysis of chromosomal translocation by in situ hybridization. | 09-20-2012 |
20120264127 | SIMULTANEOUS DETECTION OF MUTATIONAL STATUS AND GENE COPY NUMBER - The present invention provides compositions and methods for simultaneously detecting mutational status and gene copy number. In particular, the present invention provides simultaneous measurement of gene copy number and detection of the L858R and Exon 19 del mutations in a tissue sample. | 10-18-2012 |
20130034853 | TWO-COLOR CHROMOGENIC IN SITU HYBRIDIZATION - The present invention relates to systems and processes for chromogenic in situ hybridization (CISH), and in particular to methods that prevent interference between two or more color detection systems in a single assay. The present invention also relates to processes for scoring assays utilizing break-apart probes. | 02-07-2013 |
20130115593 | SUBSTRATES FOR CHROMOGENIC DETECTION AND METHODS OF USE IN DETECTION ASSAYS AND KITS - Embodiments of substrates and processes for chromogenic detection, and in particular pyrazolyl dihydrogen phosphate compounds, are disclosed. | 05-09-2013 |
20130273540 | METHOD FOR CHROMOGENIC DETECTION OF TWO OR MORE TARGET MOLECULES IN A SINGLE SAMPLE - The present invention provides a method and kit for detection of two or more target molecules in a single tissue sample, such as for gene and protein dual detection in a single tissue sample. Methods comprise treating a tissue sample with a first binding moiety that specifically binds a first target molecule. Methods further comprise treating the tissue sample with a solution containing a soluble electron-rich aromatic compound prior to or concomitantly with contacting the tissue sample with a hapten-labeled binding moiety and detecting a second target molecule. In one example, the first target molecule is a protein and the second is a nucleic acid sequence, the first target molecule being detected by immunohistochemistry and the second by in situ hybridization. The disclosed method reduces background due to non-specific binding of the hapten-labeled specific binding moiety to an insoluble electron rich compound deposited near the first target molecule. | 10-17-2013 |
Hiroaki Nitta, Oro Valley, AZ US
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20080286386 | Na+, K+-Atpase Expression in Cervical Dysplasia and Cancer - The present disclosure provides methods of diagnosing cervical dysplasia and cervical cancer by detecting Na | 11-20-2008 |
20080299555 | Multicolor chromogenic detection of biomarkers - The present invention provides compositions, kits, assembles of articles and methodology for detecting multiple target molecules in a sample, such as in a tissue sample. In particular, site-specific deposition of elemental metal is used in conjunction with other means of detection, such as other chromogenic, radioactive, chemiluminescent and fluorescent labeling, to simultaneously detect multiple targets, such a gene, a protein, and a chromosome, in a biological sample. More particularly the multiple targets may be labeled with the specifically deposited metal and other chromogenic labels to allow chromogenic immunohistochemical (IHC) detection in situ by using bright field light microscope. | 12-04-2008 |
20110136130 | METHOD FOR CHROMOGENIC DETECTION OF TWO OR MORE TARGET MOLECULES IN A SINGLE SAMPLE - The present invention provides a method and kit for detection of two or more target molecules in a single tissue sample, such as for gene and protein dual detection in a single tissue sample. Methods comprise treating a tissue sample with a first binding moiety that specifically binds a first target molecule. Methods further comprise treating the tissue sample with a solution containing a soluble electron-rich aromatic compound prior to or concomitantly with contacting the tissue sample with a hapten-labeled binding moiety and detecting a second target molecule. In one example, the first target molecule is a protein and the second is a nucleic acid sequence, the first target molecule being detected by immunohistochemistry and the second by in situ hybridization. The disclosed method reduces background due to non-specific binding of the hapten-labeled specific binding moiety to an insoluble electron rich compound deposited near the first target molecule. | 06-09-2011 |
Jeffrey A. Nitta, Broomfield, CO US
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20090186748 | ADJUSTABLE DUMBBELL WITH AN ORIENTATION FEATURE - A selectable weight dumbbell system may include a base and a dumbbell. The base may include one or more weight receiving spaces defined by the base's walls and floor. The dumbbell may include a handle and one or more selectively removable weights. The weights may be removably positionable in the weight receiving spaces. A weight and the base may form an orientation feature or key between the weight and the base that compels the weight to be positioned in said one of the weight receiving spaces in an orientation for selective engagement with the handle. The orientation feature or key may include an orientation element, such as a protrusion or the like, and an orientation receiving element, such as a groove or the like. The orientation element may extend from the weight or the base. The orientation receiving element may be defined in the weight or the base. | 07-23-2009 |
Satya Nitta, Yorktown Heights, NY US
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20140149174 | Financial Risk Analytics for Service Contracts - A method for predicting and quantifying risk in information technology (IT) service contracts includes comparing features of a new IT service contract with similar features from one or more previous IT service contracts selected from a plurality of previous IT service contracts to calculate a similarity value between each pair of the new IT service contract and one of the one or more previous IT service contracts, aggregating the similarity values, and using the aggregated similarity values with a prediction model to predict risk factors affecting the new IT service contract and to quantify an impact of each predicted risk factor on an expected gross profit margin. | 05-29-2014 |
20140149175 | Financial Risk Analytics for Service Contracts - A method for predicting and quantifying risk in information technology (IT) service contracts includes comparing features of a new IT service contract with similar features from one or more previous IT service contracts selected from a plurality of previous IT service contracts to calculate a similarity value between each pair of the new IT service contract and one of the one or more previous IT service contracts, aggregating the similarity values, and using the aggregated similarity values with a prediction model to predict risk factors affecting the new IT service contract and to quantify an impact of each predicted risk factor on an expected gross profit margin. | 05-29-2014 |
Satyanarayana V. Nitta, Cross River, NY US
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20160049364 | INTERCONNECT STRUCTURES WITH FULLY ALIGNED VIAS - A method of forming a fully aligned via connecting two metal lines on different Mx levels by forming a recessed opening above a first metal line in a first ILD; forming a cap on the first ILD and in the recessed openings; forming a second ILD on the cap; forming a metal trench hardmask above the second ILD, forming a metal trench pattern in the metal trench hardmask; forming a via pattern that is self aligned to the metal trench pattern and above a portion of the first metal line; forming a via opening exposing the first metal line by transferring the via pattern and metal trench pattern to lower levels, the via pattern is self-aligned to the recessed opening; and forming a via and a third metal line in the via opening and the transferred metal trench pattern, respectively. | 02-18-2016 |
Satyanarayana V. Nitta, Yorktown Heights, NY US
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20100200960 | DEEP TRENCH CRACKSTOPS UNDER CONTACTS - Deep trenches formed beneath contact level in a semiconductor substrate function as crackstops, in a die area or in a scribe area of the wafer, and may be disposed in rows of increasing distance from a device which they are intended to protect, and may be located under a lattice work crackstop structure in an interconnect stack layer. The deep trenches may remain unfilled, or may be filled with a dielectric material or conductor. The deep trenches may have a depth into the substrate of approximately 1 micron to 100 microns, and a width of approximately 10 nm to 10 microns. | 08-12-2010 |
20110108989 | PROCESS FOR REVERSING TONE OF PATTERNS ON INTEGERATED CIRCUIT AND STRUCTURAL PROCESS FOR NANOSCALE FABRICATION - A process to produce an airgap on a substrate having a dielectric layer comprises defining lines by lithography where airgaps are required. The lines' dimensions are shrunk by a trimming process (isotropic etching). The tone of the patterns is reversed by applying a planarizing layer which is etched down to the top of the patterns. The photoresist is removed, leading to sub-lithographic trenches which are transferred into a cap layer and eventually into the dielectric between two metal lines. The exposed dielectric is eventually damaged, and is etched out, leading to airgaps between metal lines. The gap is sealed by the pinch-off occurring during the deposition of the subsequent dielectric. | 05-12-2011 |
20110108992 | AIR GAP INTERCONNECT STRUCTURES AND METHODS FOR FORMING THE SAME - A metal interconnect structure includes at least a pair of metal lines, a cavity therebetween, and a dielectric metal-diffusion barrier layer located on at least one portion of walls of the cavity. After formation of a cavity between the pair of metal lines, the dielectric metal-diffusion barrier layer is formed on the exposed surfaces of the cavity. A dielectric material layer is formed above the pair of metal lines to encapsulate the cavity. The dielectric metal-diffusion barrier layer prevents diffusion of metal and impurities from one metal line to another metal line and vice versa, thereby preventing electrical shorts between the pair of metal lines. | 05-12-2011 |
Satyanarayana Venkata Nitta, Poughquag, NY US
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20080251284 | Electronics Structures Using a Sacrificial Multi-Layer Hardmask Scheme - An electronic structure including a substrate having a having a dielectric layer with at least one metallic interconnect structure within and a dielectric barrier layer above the dielectric layer, and a multi-layer hardmask stack coated with a self-assembled layer, where the self-assembled layer is a pattern of nanoscale and/or microscale voids which are generated into the dielectric barrier layer and into the dielectric layer next to the metallic interconnect structure to create columns in the dielectric barrier layer and dielectric layer therein. Electronics structures prepared with the process are useful to prepare electronics devices, such as computers and the like. | 10-16-2008 |
20110163446 | METHOD TO GENERATE AIRGAPS WITH A TEMPLATE FIRST SCHEME AND A SELF ALIGNED BLOCKOUT MASK AND STRUCTURE - A structure and method to produce an airgap on a substrate having a dielectric layer and copper interconnects with sublithographic perforations therein which are ordered throughout the wafer structure in a macro level and a micro level with no change in order orientation and the top layer of the copper interconnects are not exposed. | 07-07-2011 |
Satyanayana V. Nitta, Poughquag, NY US
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20130207263 | SEMICONDUCTOR CHIPS INCLUDING PASSIVATION LAYER TRENCH STRUCTURE - An integrated circuit including an active region a passive region and a cut line in the passive region includes a passivation layer that includes an outer nitride layer over an oxide layer. The integrated circuit also includes a crack stop below the passivation layer and in the passive region, and a solder ball in the active region. The passivation layer has a trench formed therein in a location that is further from the active region than the crack stop and closer to the active region than the cut line, the trench passing completely through the outer nitride layer and a least a portion of the way through the oxide layer. | 08-15-2013 |
Satya V. Nitta, Yorktown Heights, NY US
Patent application number | Description | Published |
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20110121457 | Process for Reversing Tone of Patterns on Integrated Circuit and Structural Process for Nanoscale Production - A process to produce an airgap on a substrate having a dielectric layer comprises defining lines by lithography where airgaps are required. The lines' dimensions are shrunk by a trimming process (isotropic etching). The tone of the patterns is reversed by applying a planarizing layer which is etched down to the top of the patterns. The photoresist is removed, leading to sub-lithographic trenches which are transferred into a cap layer and eventually into the dielectric between two metal lines. The exposed dielectric is eventually damaged, and is etched out, leading to airgaps between metal lines. The gap is sealed by the pinch-off occurring during the deposition of the subsequent dielectric. | 05-26-2011 |
20120261823 | INTERCONNECT STRUCTURES WITH ENGINEERED DIELECTRICS WITH NANOCOLUMNAR POROSITY - A method for forming an interconnect structure with nanocolumnar intermetal dielectric is described involving the construction of an interconnect structure using a solid dielectric, and introducing a regular array of vertically aligned nanoscale pores through stencil formation and etching to form a hole array and subsequently pinching off the tops of the hole array with a cap dielectric. Variations of the method and means to construct a multilevel nanocolumnar interconnect structure are also described. | 10-18-2012 |
Satya V. Nitta, Armonk, NY US
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20110020753 | Method for reversing tone of patterns on integrated circuit and patterning sub-lithography trenches - A method for reversing the tone of a lithographic image on a substrate comprises depositing a modifiable material on a substrate; applying a photolithographic material on the modifiable material: defining a removable patterned area in the photolithopgraphic material by photolithograpic means; removing the patterned area to produce an exposed region in the modifiable material that substantially conforms to the patterned area; producing a reacted modifiable material by increasing the etch resistance of the modifable material substantially throughout the exposed region so that the etch resistance of the exposed region comprises a region that substantially conforms to the exposed region; and removing the photoresist and the modifiable material to leave the reacted modifiable material and substrate. | 01-27-2011 |
20110210448 | Interconnect Structures Incorporating Air-Gap Spacers - A dual damascene article of manufacture comprises a trench containing a conductive metal column where the trench and the conductive metal column extend down into and are contiguous with a via. The trench and the conductive metal column and the via have a common axis. These articles comprise interconnect structures incorporating air-gap spacers containing metal/insulator structures for Very Large Scale Integrated (VLSI) and Ultra Large Scale Integrated (ULSI) devices and packaging. The trench in this regard comprises a sidewall air-gap immediately adjacent the side walls of the trench and the conductive metal column, the sidewall air-gap extending down to the via to a depth below a line fixed by the bottom of the trench, and continues downward in the via for a distance of from about 1 Angstrom below the line to the full depth of the via. In another aspect, the article of manufacture comprises a capped dual damascene structure. | 09-01-2011 |
20110210449 | INTERCONNECT STRUCTURES INCORPORATING AIR-GAP SPACERS - A dual damascene article of manufacture comprises a trench containing a conductive metal column where the trench and the conductive metal column extend down into and are contiguous with a via. The trench and the conductive metal column and the via have a common axis. These articles comprise interconnect structures incorporating air-gap spacers containing metal/insulator structures for Very Large Scale Integrated (VLSI) and Ultra Large Scale Integrated (ULSI) devices and packaging. The trench in this regard comprises a sidewall air-gap immediately adjacent the side walls of the trench and the conductive metal column, the sidewall air-gap extending down to the via to a depth below a line fixed by the bottom of the trench, and continues downward in the via for a distance of from about 1 Angstrom below the line to the full depth of the via. In another aspect, the article of manufacture comprises a capped dual damascene structure. | 09-01-2011 |
20110237075 | Method for Manufacturing Interconnect Structures Incorporating Air-Gap Spacers - A dual damascene article of manufacture comprises a trench containing a conductive metal column where the trench and the conductive metal column extend down into and are contiguous with a via. The trench and the conductive metal column and the via have a common axis. These articles comprise interconnect structures incorporating air-gap spacers containing metal/insulator structures for Very Large Scale Integrated (VLSI) and Ultra Large Scale Integrated (ULSI) devices and packaging. The trench in this regard comprises a sidewall air-gap immediately adjacent the side walls of the trench and the conductive metal column, the sidewall air-gap extending down to the via to a depth below a line fixed by the bottom of the trench, and continues downward in the via for a distance of from about 1 Angstrom below the line to the full depth of the via. In another aspect, the article of manufacture comprises a capped dual damascene structure. | 09-29-2011 |
20130022930 | Method for Reversing Tone of Patterns on Integrated Circuit and Patterning Sub-Lithography Trenches - A method for reversing the tone of a lithographic image on a substrate comprises depositing a modifiable material on a substrate; applying a photolithographic material on the modifiable material; defining a removable patterned area in the photolithopgraphic material by photolithograpic means; removing the patterned area to produce an exposed region in the modifiable material that substantially conforms to the patterned area; producing a reacted modifiable material by increasing the etch resistance of the modifable material substantially throughout the exposed region so that the etch resistance of the exposed region comprises a region that substantially conforms to the exposed region; and removing the photoresist and the modifiable material to leave the reacted modifiable material and substrate. | 01-24-2013 |
20160027686 | METHOD FOR MANUFACTURING INTERCONNECT STRUCTURES INCORPORATING AIR GAP SPACERS - A dual damascene article of manufacture comprises a trench containing a conductive metal column where the trench and the conductive metal column extend down into and are contiguous with a via. The trench and the conductive metal column and the via have a common axis. These articles comprise interconnect structures incorporating air-gap spacers containing metal/insulator structures for Very Large Scale Integrated (VLSI) and Ultra Large Scale Integrated (ULSI) devices and packaging. The trench in this regard comprises a sidewall air-gap immediately adjacent the side walls of the trench and the conductive metal column, the sidewall air-gap extending down to the via to a depth below a line fixed by the bottom of the trench, and continues downward in the via for a distance of from about 1 Angstrom below the line to the full depth of the via. In another aspect, the article of manufacture comprises a capped dual damascene structure. | 01-28-2016 |