Patent application number | Description | Published |
20080318160 | Novel sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process - Sulfonate salts have the formula: | 12-25-2008 |
20090061358 | NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS - Photoacid generators generate sulfonic acids of formula (1a) or (1c) upon exposure to high-energy radiation. | 03-05-2009 |
20090186296 | POSITIVE RESIST COMPOSITIONS AND PATTERNING PROCESS - A positive resist composition comprises (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) an acid generator. The resin (A) is a polymer comprising specific recurring units, represented by formula (1). The acid generator (B) is a specific sulfonium salt compound. When processed by lithography, the composition is improved in resolution and forms a pattern with a satisfactory mask fidelity and a minimal LER. | 07-23-2009 |
20090186297 | POSITIVE RESIST COMPOSITIONS AND PATTERNING PROCESS - A positive resist composition comprises (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) an acid generator. The resin (A) is a polymer comprising specific recurring units, represented by formula (1). The acid generator (B) is a specific sulfonium salt compound. When processed by lithography, the composition is improved in resolution and forms a pattern with a minimal LER. | 07-23-2009 |
20090186298 | POSITIVE RESIST COMPOSITIONS AND PATTERNING PROCESS - A positive resist composition comprises (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) an acid generator. The resin (A) is a polymer comprising specific recurring units, represented by formula (1). The acid generator (B) is a specific sulfonium salt compound. When processed by lithography, the composition is improved in resolution and forms a pattern with a satisfactory mask fidelity and a minimal LER. | 07-23-2009 |
20090202943 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS - A positive resist composition comprises a polymer comprising recurring units having a sulfonium salt incorporated therein as a base resin which becomes soluble in alkaline developer under the action of acid. The polymer generates a strong sulfonic acid upon exposure to high-energy radiation so as to facilitate effective scission of acid labile groups in the resist composition. | 08-13-2009 |
20090233223 | SULFONIUM SALT-CONTAINING POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS - A polymer comprising recurring units of a sulfonium salt represented by formula (1) is provided as well as a chemically amplified resist composition comprising the same. R | 09-17-2009 |
20090246694 | NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS - Photoacid generators generate sulfonic acids of formula ( | 10-01-2009 |
20090269696 | SULFONIUM SALT-CONTAINING POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS - A polymer comprising recurring units having formulae (1), (2) and (3) is provided as well as a chemically amplified resist composition comprising the same. R | 10-29-2009 |
20090274978 | NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS - Photoacid generators generate sulfonic acids of formula (1a) or (1b) upon exposure to high-energy radiation. | 11-05-2009 |
20100055608 | POLYMERIZABLE ANION-CONTAINING SULFONIUM SALT AND POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS - A polymerizable anion-containing sulfonium salt having formula (1) is provided wherein R | 03-04-2010 |
20100099042 | POLYMERIZABLE ANION-CONTAINING SULFONIUM SALT AND POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS - A polymerizable anion-containing sulfonium salt having formula (1) is provided wherein R | 04-22-2010 |
20100104977 | PHOTORESIST UNDERCOAT-FORMING MATERIAL AND PATTERNING PROCESS - A material comprising a novolac resin having a C | 04-29-2010 |
20100143830 | SULFONIUM SALT, ACID GENERATOR, RESIST COMPOSITION, PHOTOMASK BLANK, AND PATTERNING PROCESS - A sulfonium salt has formula (1) wherein R | 06-10-2010 |
20100304297 | PATTERNING PROCESS AND RESIST COMPOSITION - A pattern is formed by coating a first positive resist composition comprising a base resin, a photoacid generator, and a base generator onto a substrate to form a first resist film, patternwise exposure, PEB, and development to form a first resist pattern, heating the first resist pattern for causing the base generator to generate a base for inactivating the pattern to acid, coating a second positive resist composition comprising a C | 12-02-2010 |
20100316955 | CHEMICALLY AMPLIFIED POSITIVE PHOTORESIST COMPOSITION AND PATTERN FORMING PROCESS - A polymer comprising a high proportion of aromatic ring structure-containing units and containing an aromatic sulfonic acid sulfonium salt on a side chain is used to form a chemically amplified positive photoresist composition which is effective in forming a resist pattern having high etch resistance. The polymer overcomes the problems of dissolution in solvents for polymerization and purification and in resist solvents. | 12-16-2010 |
20110003247 | PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS - The photoacid generator produces a sulfonic acid which has a bulky cyclic structure in the sulfonate moiety and a straight-chain hydrocarbon group and thus shows a controlled acid diffusion behavior and an adequate mobility. The PAG is fully compatible with a resin to form a resist composition which performs well during the device fabrication process and solves the problems of resolution, LWR, and exposure latitude. | 01-06-2011 |
20110008735 | SULFONIUM SALT, RESIST COMPOSITION, AND PATTERNING PROCESS - A sulfonium salt having a triphenylsulfonium cation and a sulfite anion within the molecule is best suited as a photoacid generator in chemically amplified resist compositions. Upon exposure to high-energy radiation, the sulfonium salt generates a sulfonic acid, which facilitates efficient scission of acid labile groups in chemically amplified positive resist compositions. Because of substantial non-volatility under high vacuum conditions in the EB or EUV lithography, the risk of the exposure tool being contaminated is minimized. | 01-13-2011 |
20110033803 | PATTERNING PROCESS AND RESIST COMPOSITION - A pattern is formed by coating a first positive resist composition comprising a copolymer comprising lactone-containing recurring units, acid labile group-containing recurring units and carbamate-containing recurring units, and a photoacid generator onto a substrate to form a first resist film, patternwise exposure, PEB, and development to form a first resist pattern, heating the first resist pattern for inactivation to acid, coating a second positive resist composition comprising a C | 02-10-2011 |
20110091812 | PATTERNING PROCESS AND RESIST COMPOSITION - The process forms a pattern by applying a resist composition onto a substrate to form a resist film, baking, exposure, post-exposure baking, and development. The resist composition comprises a polymer comprising recurring units having an acid labile group and substantially insoluble in alkaline developer, a PAG, a PBG capable of generating an amino group, a quencher for neutralizing the acid from PAG for inactivation, and an organic solvent. A total amount of amino groups from the quencher and PBG is greater than an amount of acid from PAG. An unexposed region and an over-exposed region are not dissolved in developer whereas only an intermediate exposure dose region is dissolved in developer. Resolution is doubled by splitting a single line into two through single exposure and development. | 04-21-2011 |
20110160481 | NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS - Sulfonate salts have the formula: HOCH | 06-30-2011 |
20110212390 | CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND PATTERNING PROCESS - A chemically amplified negative resist composition is provided comprising (A) an alkali-soluble base polymer, (B) an acid generator, and (C) a nitrogen-containing compound, the base polymer (A) turning alkali insoluble under the catalysis of acid. A polymer having a fluorinated carboxylic acid onium salt on a side chain is included as the base polymer. Processing the negative resist composition by a lithography process may form a resist pattern with advantages including uniform low diffusion of acid, improved LER, and reduced substrate poisoning. | 09-01-2011 |
20110212391 | POLYMER, CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS - A polymer comprising recurring units having a fluorinated carboxylic acid onium salt structure on a side chain is used to formulate a chemically amplified positive resist composition. When the composition is processed by lithography to form a positive pattern, the diffusion of acid in the resist film is uniform and slow, and the pattern is improved in LER. | 09-01-2011 |
20120045724 | SULFONIUM SALT, RESIST COMPOSITION, AND PATTERNING PROCESS - A sulfonium salt of a naphthylsulfonium cation having a hydrophilic phenolic hydroxyl group or ethylene glycol chain with a specific anion is provided. The sulfonium salt is used as a photoacid generator to form a resist composition which when processed by immersion lithography, offers advantages of restrained dissolution in the immersion water and less pattern dependence or dark-bright difference. | 02-23-2012 |
20120100486 | SULFONIUM SALT, RESIST COMPOSITION, AND PATTERNING PROCESS - A sulfonium salt of a naphthyltetrahydrothiophenium cation having a fluoroalkoxy chain with a specific anion is provided. The sulfonium salt is used as a photoacid generator to form a resist composition which when processed by immersion lithography, offers advantages of restrained dissolution in the immersion water and less pattern dependence or dark/bright bias. | 04-26-2012 |
20120129103 | SULFONIUM SALT-CONTAINING POLYMER, RESIST COMPOSITION, PATTERNING PROCESS, AND SULFONIUM SALT MONOMER AND MAKING METHOD - A sulfonium salt having a 4-fluorophenyl group is introduced as recurring units into a polymer comprising hydroxyphenyl (meth)acrylate units and acid labile group-containing (meth)acrylate units to form a polymer which is useful as a base resin in a resist composition. The resist composition has a high sensitivity, high resolution and minimized LER. | 05-24-2012 |
20120135350 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS - A positive resist composition comprising (A) a polymer comprising recurring units of a specific structure adapted to generate an acid in response to high-energy radiation and acid labile units, the polymer having an alkali solubility that increases under the action of an acid, and (B) a sulfonium salt of a specific structure exhibits a high resolution in forming fine size patterns, typically trench patterns and hole patterns. Lithographic properties of profile, DOF and roughness are improved. | 05-31-2012 |
20120135357 | POLYMER, POSITIVE RESIST COMPOSITION, AND PATTERNING PROCESS - A positive resist composition comprising a polymer comprising recurring units of a specific structure adapted to generate an acid upon exposure to high-energy radiation, recurring units of a lactone ring-containing structure, and acid labile units, all the recurring units being free of hydroxyl, can form a fine size pattern having a rectangular profile and improved collapse resistance. | 05-31-2012 |
20120225386 | CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS - A chemically amplified resist composition is provided comprising (A) a specific tertiary amine compound, (B) a specific acid generator, (C) a base resin having an acidic functional group protected with an acid labile group, which is substantially insoluble in alkaline developer and turns soluble in alkaline developer upon deprotection of the acid labile group, and (D) an organic solvent. The resist composition has a high resolution, improved defect control in the immersion lithography, and good shelf stability. | 09-06-2012 |
20120288796 | RESIST COMPOSITION AND PATTERNING PROCESS - A resist composition is provided comprising a polymer comprising recurring units having a hydroxyl group substituted with an acid labile group, an onium salt PAG capable of generating a sulfonic acid, imide acid or methide acid, and an onium salt PAG capable of generating a carboxylic acid. A resist film of the composition is improved in dissolution contrast during organic solvent development, and from which a hole pattern having minimized nano-edge roughness can be formed via positive/negative reversal. | 11-15-2012 |
20130005997 | PREPARATION OF 2,2-BIS (FLUOROALKYL) OXIRANE AND PREPARATION OF PHOTOACID GENERATOR THEREFROM - A 2,2-bis(fluoroalkyl)oxirane (A) is prepared by reacting a fluorinated alcohol (1) with a chlorinating, brominating or sulfonylating agent under basic conditions to form an oxirane precursor (2) and subjecting the oxirane precursor to ring closure under basic conditions. R | 01-03-2013 |
20130034813 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION FOR ArF IMMERSION LITHOGRAPHY AND PATTERN FORMING PROCESS - A chemically amplified positive resist composition comprising (A) a sulfonium salt of 3,3,3-trifluoro-2-hydroxy-2-trifluoromethylpropionic acid, (B) an acid generator, (C) a base resin, and (D) an organic solvent is suited for ArF immersion lithography. The carboxylic acid sulfonium salt is highly hydrophobic and little leached out in immersion water. By virtue of controlled acid diffusion, a pattern profile with high resolution can be constructed. | 02-07-2013 |
20130108960 | PATTERNING PROCESS AND RESIST COMPOSITION | 05-02-2013 |
20130108964 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION FOR ArF IMMERSION LITHOGRAPHY AND PATTERN FORMING PROCESS | 05-02-2013 |
20130209936 | PATTERNING PROCESS AND RESIST COMPOSITION - A pattern is formed by coating a first positive resist composition comprising a copolymer comprising lactone-containing recurring units, acid labile group-containing recurring units and carbamate-containing recurring units, and a photoacid generator onto a substrate to form a first resist film, patternwise exposure, PEB, and development to form a first resist pattern, heating the first resist pattern for inactivation to acid, coating a second positive resist composition comprising a C | 08-15-2013 |
20140296561 | SULFONIUM SALT-CONTAINING POLYMER, RESIST COMPOSITION, PATTERNING PROCESS, AND SULFONIUM SALT MONOMER AND MAKING METHOD - A sulfonium salt having a 4-fluorophenyl group is introduced as recurring units into a polymer comprising hydroxyphenyl(meth)acrylate units and acid labile group-containing (meth)acrylate units to form a polymer which is useful as a base resin in a resist composition. The resist composition has a high sensitivity, high resolution and minimized LER. | 10-02-2014 |