Patent application number | Description | Published |
20090151988 | Flexible printed circuit board and method of manufacturing the same - An FPCB and a method of manufacturing the same, in which an electrical signal-conductive portion of the FPCB is subjected to little stress so as not to be broken by fatigue in spite of repeated bending of the FPCB, thereby increasing the lifetime of the FPCB. | 06-18-2009 |
20090266911 | SHOWERHEAD FOR CHEMICAL VAPOR DEPOSITION AND CHEMICAL VAPOR DEPOSITION APPARATUS HAVING THE SAME - A showerhead for chemical vapor deposition (CVD) includes a head storing reaction gas flowing thereinto and feeding the stored reaction gas to a reaction chamber, and at least one support member passing through and coupled with the head and the reaction chamber so as to support the head. | 10-29-2009 |
20110316361 | Horizontal linear vibrator - There is provided a horizontal linear vibrator including a bracket providing an internal space; a vibration unit mounted in the internal space and including a mass body moving horizontally and linearly; and a magnetic field unit including a magnet fixed to the mass body and a coil installed within a magnetic field of the magnet and generating electromagnetic force to allow the vibration unit to move horizontally and linearly, wherein the coil includes a coil line disposed between the bracket and a printed circuit board and extending outside of the internal space of the bracket such that the coil line is connected with the printed circuit board for applying power from an external source to the coil outside of the internal space of the bracket. | 12-29-2011 |
20120161914 | TRANSFORMER - There is provided a transformer having a minimized thickness. The transformer includes: insulating layers; and coil units including primary and secondary coils disposed on the insulating layers to have a common center. | 06-28-2012 |
20120227888 | METHOD OF MANUFACTURING A FLEXIBLE PRINTED CIRCUIT BOARD - An FPCB and a method of manufacturing the same, in which an electrical signal-conductive portion of the FPCB is subjected to little stress so as not to be broken by fatigue in spite of repeated bending of the FPCB, thereby increasing the lifetime of the FPCB. | 09-13-2012 |
20120291272 | METHOD OF MANUFACTURING A FLEXIBLE PRINTED CIRCUIT BOARD - An FPCB and a method of manufacturing the same, in which an electrical signal-conductive portion of the FPCB is subjected to little stress so as not to be broken by fatigue in spite of repeated bending of the FPCB, thereby increasing the lifetime of the FPCB. | 11-22-2012 |
20130088100 | LINEAR VIBRATOR - There is provided a linear vibrator, including: a fixed part providing an interior space having a predetermined size; at least one magnet disposed in the interior space and generating magnetic force; a vibration part including a coil facing the magnet and generating electromagnetic force through interaction with the magnet and a mass body; and an elastic member coupled to the fixed part and the vibration part to mediate vibrations of the vibration part and having a damping increasing portion attached to a predetermined region of a surface thereof. | 04-11-2013 |
20140061891 | SEMICONDUCTOR CHIP PACKAGE AND MANUFACTURING METHOD THEREOF - Disclosed herein are a semiconductor chip package and a manufacturing method thereof. The manufacturing method of the semiconductor chip package includes: a) mounting a semiconductor chip on a printed circuit board (PCB); b) inserting a warpage suppressing reinforcement member into an inner ceiling of a mold manufactured in order to package the PCB having the semiconductor chip mounted thereon; c) combining the mold having the warpage suppressing reinforcement member inserted into the ceiling thereof with the upper surface of the PCB so as to surround the PCB having the semiconductor chip mounted thereon; d) injection-molding and filling a molding material in the mold, and hardening the molding material by applying heat, and e) hardening the molding material and then removing the mold to complete the semiconductor chip package. | 03-06-2014 |
20140146498 | ELECTRONIC COMPONENT PACKAGE - Disclosed herein is an electronic component package including: a connection member provided on at least one surface of a substrate; an active element coupled to the substrate by the connection member; a molding part covering an exposed surface of the active element; and an additional layer formed on an exposed surface of the molding part to decrease a warpage phenomenon. In the electronic component package, the warpage phenomenon may be decreased as compared with the related art. | 05-29-2014 |
20140152126 | HORIZONTAL LINEAR VIBRATOR - The present invention provides a horizontal linear vibrator which can reduce the thickness but increase vibration strength while at the same time guaranteeing a sufficiently long lifetime and satisfactory responsivity. The horizontal linear vibrator includes a casing, a bracket, a vibration unit and springs. The casing defines an internal space therein. The bracket is disposed under the casing. A cylindrical coil is provided on the bracket. The vibration unit has a magnet, a yoke and a weight. The yoke contains the magnet therein and is open on the lower end thereof. The weight is coupled to the outer surface of the yoke. The springs are coupled to sidewall plates of the casing or the bracket. The springs elastically support the vibration unit to allow the vibration unit to vibrate in the horizontal direction. | 06-05-2014 |
Patent application number | Description | Published |
20110001365 | LINEAR VIBRATION MOTOR - Disclosed herein is a linear vibration motor. The motor includes a casing surrounding the top and widthwise side of the motor, and a bracket surrounding the bottom and lengthwise side of the motor. A plate is provided on an inner surface of a side of the bracket and integrally has a cylindrical part to accommodate a coil. A mass body is provided in a central portion of the bracket and vibrates horizontally, a yoke is provided on a side surface of the mass body, and a magnet is mounted to a central portion of the yoke to be inserted into an internal space of the coil. A spring couples the plate with the yoke, thus transmitting vibratory force to the motor. An extension part extends from an end of the spring, and a bearing is provided on an end of the extension part, thus minimizing friction with the casing. | 01-06-2011 |
20110012441 | HORIZONTAL LINEAR VIBRATOR - The present invention provides a horizontal linear vibrator which can increase vibration strength while at the same time guaranteeing a sufficiently long lifetime and satisfactory responsivity. The horizontal linear vibrator includes a casing, a bracket, a vibration unit and springs. The bracket and the casing form the internal space therein. A coil is provided above the bracket such that the center axis thereof is oriented in a horizontal direction. The vibration unit is disposed through the coil and comprises a magnetic field generating unit and a weight. The magnetic field generating unit includes a magnet assembly and a yoke. The magnet assembly has magnets which are provided on opposite sides of a magnetic body core such that the similar magnetic poles of the magnets face each other. The weight is mounted to the magnetic field generating unit. The springs are coupled to the casing or the bracket and elastically support the vibration unit. | 01-20-2011 |
20110018364 | HORIZONTAL LINEAR VIBRATOR - The present invention provides a horizontal linear vibrator which can reduce the thickness but increase the strength of vibrations while at the same time guaranteeing a sufficiently long lifetime and satisfactory responsivity. The horizontal linear vibrator includes a casing, a bracket, a vibration unit and springs. The casing defines an internal space therein. A first magnet is attached to an upper plate of the casing. The bracket is coupled to the lower end of the casing. The second magnet is attached to the bracket such that different poles of the first and second magnets face each other. The vibration unit has a weight, and a cylindrical coil which is provided in or under the weight. The springs are coupled to the sidewall plates of the casing or the bracket. The springs elastically support the vibration unit to allow the vibration unit to vibrate in the horizontal direction. | 01-27-2011 |
20110018365 | HORIZONTAL LINEAR VIBRATOR - The present invention provides a horizontal linear vibrator which can reduce the thickness but increase the strength of vibrations while at the same time guaranteeing a sufficiently long lifetime and satisfactory responsivity. The horizontal linear vibrator includes a casing, a bracket, a vibration unit, a cylindrical coil and springs. The bracket is coupled to the casing to form an internal space. The vibration unit includes a weight, a pair of yokes and magnets. The weight has an opening therein. The yokes are disposed on the inner surfaces of the weight. The magnets are provided in the yokes such that different poles of the magnets face each other. The cylindrical coil is perpendicularly mounted to the bracket and disposed in space between the pair of yoke. The springs are coupled to both ends of the casing or the bracket. The springs elastically support the vibration unit to allow the vibration unit to vibrate in the horizontal direction. | 01-27-2011 |
20110018367 | HORIZONTAL LINEAR VIBRATOR - The present invention provides a horizontal linear vibrator which can reduce the thickness but increase vibration strength while at the same time guaranteeing a sufficiently long lifetime and satisfactory responsivity. The horizontal linear vibrator includes a casing, a bracket, a vibration unit and springs. The casing defines an internal space therein. The bracket is disposed under the casing. A cylindrical coil is provided on the bracket. The vibration unit has a magnet, a yoke and a weight. The yoke contains the magnet therein and is open on the lower end thereof. The weight is coupled to the outer surface of the yoke. The springs are coupled to sidewall plates of the casing or the bracket. The springs elastically support the vibration unit to allow the vibration unit to vibrate in the horizontal direction. | 01-27-2011 |
20110101798 | SPRING FOR LINEAR VIBRATION MOTORS - Disclosed herein is a spring for a linear vibration motor. The spring elastically supports a vibrator to a stator of the linear vibration motor. The vibrator linearly vibrates using electromagnetic force generated by interaction between a coil and a magnet. The spring is provided between the stator and the vibrator. The spring includes a body part and an elastic part. The elastic part is coupled at a first end thereof to the body part. The elastic part extends a predetermined length such that a second end thereof is spaced apart from the body part. | 05-05-2011 |
20110150359 | CURRENT LIMITATION METHOD OF DISPLAY DEVICE - A current limitation method of a display device includes: calculating a brightness average in each frame of an inputted image; calculating a brightness difference between successive frames of the image by using the calculated brightness average, and calculating a cumulative average brightness value by cumulating the brightness average with respect to the frames included in a frame length which is varied depending on the brightness difference; converting the cumulative average brightness value into a preset brightness adjustment value; and adjusting the brightness of the inputted image according to the brightness adjustment value. | 06-23-2011 |
20110169817 | APPARATUS FOR COMPENSATING FOR DETERIORATION IN AMOLED - There is provided an apparatus for compensating for deterioration in an active matrix organic light-emitting diode. An apparatus for compensating for deterioration in an active matrix organic light-emitting diode being operated by a pixel driving unit may include: a switching control unit being synchronized with an operation of the pixel driving unit to thereby generate a switching control signal in order to compensate for deterioration in a pixel; and a switch circuit unit connected between an anode of the active matrix organic light-emitting diode and a terminal of a deterioration compensation voltage, being turned on or off according to the switching control signal from the switching control unit, and supplying the deterioration compensation voltage to the anode of the active matrix organic light-emitting diode while being turned on. | 07-14-2011 |
20110227426 | LINEAR VIBRATOR - Disclosed herein is a linear vibrator having a mass body which is accommodated in a casing defining an internal space and is vibrated. The linear vibrator includes a bracket supporting the linear vibrator from a lower position. The bracket has a depression in a bottom thereof such that a coil lead wire of a coil is placed in the depression, thus preventing friction between the coil lead wire and a movable unit. | 09-22-2011 |
20140138611 | IN NANOWIRE, DEVICE USING THE SAME AND METHOD OF MANUFACTURING In NANOWIRE - There is provided an In nanowire including a substrate, an indium thin film formed on the substrate, an insulating film formed on the indium thin film and having at least one through hole through formation of a pattern, and an In nanowire vertically protruded from the indium thin film through the at least one through hole. | 05-22-2014 |
Patent application number | Description | Published |
20110298949 | LIGHT LEAKAGE COMPENSATING UNIT IMAGE SENSORS, IMAGE SENSOR ARRAYS INCLUDING THE UNIT IMAGE SENSORS, AND METHODS FOR COMPENSATING FOR LIGHT LEAKAGE OF THE IMAGE SENSOR ARRAYS - A light leakage compensating unit image sensor in a back side illumination method includes a photodiode and a storage diode, in which light input to a back side of the unit image sensor is received only by an area forming an electrode of the photodiode, and an area for forming another electrode of the photodiode and an area for forming two electrodes of the storage diode are separated from each other by a well, thereby compensating light leakage. | 12-08-2011 |
20110316002 | CMOS IMAGE SENSOR - A complementary metal-oxide-semiconductor (CMOS) image sensor, including a wiring layer, a photodiode stacked with the wiring layer, a micro-lens stacked on the photodiode, an anti-reflection layer stacked on the photodiode. An anti-absorption layer may be provided between the photodiode and the anti-reflection layer. The photodiode may include a first portion and a second portion. Light may be focused on the first portion by the micro-lens and the second portion may at least partially surround the first portion. A material of the first portion may have a refractive index higher than a refractive index of a material of the second portion. The anti-absorption layer may include a compound semiconductor having an energy band gap greater than an energy band gap of a semiconductor included in the photodiode. | 12-29-2011 |
20120009720 | BACKSIDE ILLUMINATED IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing a backside illuminated image sensor, including forming a first isolation layer in a first semiconductor layer, such that the first isolation layer defines pixels of a pixel array in the first semiconductor layer, forming a second semiconductor layer on a first surface of the first semiconductor layer, forming a second isolation layer in the second semiconductor layer, such that the second isolation layer defines active device regions in the second semiconductor layer, forming photo detectors and circuit devices by implanting impurities into a first surface of the second semiconductor layer, the first surface of the second semiconductor layer facing away from the first semiconductor layer, forming a wiring layer on the first surface of the second semiconductor layer, and forming a light filter layer on a second surface of the first semiconductor layer. | 01-12-2012 |
20120098078 | BACKSIDE ILLUMINATED ACTIVE PIXEL SENSOR ARRAY, METHOD OF MANUFACTURING THE SAME, AND BACKSIDE ILLUMINATED IMAGE SENSOR INCLUDING THE SAME - A backside-illuminated active pixel sensor array in which crosstalk between adjacent pixels is prevented, a method of manufacturing the backside-illuminated active pixel sensor array, and a backside-illuminated image sensor including the backside-illuminated active pixel sensor array are provided. The backside-illuminated active pixel sensor array includes a semiconductor substrate of a first conductive type that comprises a front surface and a rear surface, light-receiving devices for generating charges in response to light incident via the rear surface, and one or more pixel isolating layers for forming boundaries between pixels by being disposed between the adjacent light-receiving devices, a wiring layer disposed on the front surface of the semiconductor substrate, and a light filter layer disposed on the rear surface of the semiconductor substrate, wherein a thickness of the one or more pixel isolating layers decreases from a point in the semiconductor substrate toward the rear surface. | 04-26-2012 |
20120104534 | IMAGE SENSOR INCLUDING GUARD RING AND NOISE BLOCKING AREA TO BLOCK NOISE AND METHOD OF MANUFACTURING THE SAME - An image sensor including a deep guard ring and a noise blocking area and a method of manufacturing the same. The image sensor includes the deep guard ring and a deep P well surrounding the noise blocking area, thereby preventing crosstalk between adjacent pixels. In addition, an ion implantation layer is divided by the noise blocking area, so that substrate crosstalk is effectively eliminated. | 05-03-2012 |
20120133803 | METHOD AND APPARATUSES FOR PEDESTAL LEVEL COMPENSATION OF ACTIVE SIGNAL GENERATED FROM AN OUTPUT SIGNAL OF A PIXEL IN AN IMAGE SENSOR - A pedestal level compensation method includes calculating a dark level difference error depending on temperature, calculating a pedestal level offset depending on an analog gain, and compensating a pedestal level according to the dark level difference error and the pedestal level offset. | 05-31-2012 |
20130093911 | IMAGE SENSOR, ELECTRONIC DEVICE INCLUDING THE SAME, AND IMAGE SENSING METHOD - An image sensor and an image sensing method are provided. The image sensor includes a semiconductor substrate; a photoelectric converter comprising a bias unit, which comprises a first electrode and a second electrode, and an organic photoelectric conversion layer, which selectively absorbs light and converts the light into electrons; a via contacting the second electrode to connect the photoelectric converter with the semiconductor substrate; a storage node configured to store electrons; a read-out unit to converts charge transferred from the storage node into an image signal; a pixel array comprising a plurality of pixels, each of which comprises an intermediate insulating layer; and an output circuit configured to read out the image signal from the pixel array. The quantity of light received by the organic photoelectric conversion layer is adjusted by a bias change of the bias unit. | 04-18-2013 |
20130093932 | ORGANIC PIXELS INCLUDING ORGANIC PHOTODIODE, MANUFACTURING METHODS THEREOF, AND APPARATUSES INCLUDING THE SAME - Provided is an organic pixel, which includes a semiconductor substrate including a pixel circuit, an interconnection layer having a first contact and a first electrode formed on a semiconductor substrate, and an organic photo-diode formed on the interconnection layer. For example, the organic photo-diode includes an insulation layer formed on the first electrode, a second electrode and a photo-electric conversion region formed between the first contact, the insulation layer and the second electrode. The photo-electric conversion region includes an electron donating organic material and an electron accepting organic material. The organic photo-diode may further include a second contact electrically connected to the first contact. The horizontal distance between the second contacts and the insulation layer may be less than or equal to a few micrometers, for example, 10 micrometers. | 04-18-2013 |
20130188078 | IMAGE SENSOR, OPERATING METHOD THEREOF, AND PORTABLE DEVICE HAVING THE SAME - An image sensor includes a photo detector for accumulating charges in response to an incident light, a storage unit for storing the charges, a first transmission gate for transmitting the charges from the photo detector to the storage unit, a second transmission gate for transmitting the charges from the storage unit to the floating diffusion node, a reset gate for resetting the floating diffusion node in response a reset gate signal, and a coupling circuit connected between the reset gate and the storage unit. | 07-25-2013 |
20130320479 | IMAGE SENSOR, IMAGE PROCESSING SYSTEM INCLUDING THE IMAGE SENSOR, AND METHOD OF MANUFACTURING THE IMAGE SENSOR - An image sensor includes a photodetector formed in an epitaxial layer, and trench isolations each formed in a direction from a back side of the epitaxial layer to a front side of the epitaxial layer. Each of the trench isolations is filled with at least one insulator, and the insulator is a negative charge material. | 12-05-2013 |
20130344639 | BACKSIDE ILLUMINATED ACTIVE PIXEL SENSOR ARRAY, METHOD OF MANUFACTURING THE SAME, AND BACKSIDE ILLUMINATED IMAGE SENSOR INCLUDING THE SAME - A backside-illuminated active pixel sensor array in which crosstalk between adjacent pixels is prevented, a method of manufacturing the backside-illuminated active pixel sensor array, and a backside-illuminated image sensor including the backside-illuminated active pixel sensor array are provided. The backside-illuminated active pixel sensor array includes a semiconductor substrate of a first conductive type that comprises a front surface and a rear surface, light-receiving devices for generating charges in response to light incident via the rear surface, and one or more pixel isolating layers for forming boundaries between pixels by being disposed between the adjacent light-receiving devices, a wiring layer disposed on the front surface of the semiconductor substrate, and a light filter layer disposed on the rear surface of the semiconductor substrate, wherein a thickness of the one or more pixel isolating layers decreases from a point in the semiconductor substrate toward the rear surface. | 12-26-2013 |
20150054995 | ORGANIC PIXELS INCLUDING ORGANIC PHOTODIODE, MANUFACTURING METHODS THEREOF, AND APPARATUSES INCLUDING THE SAME - Provided is an organic pixel, which includes a semiconductor substrate including a pixel circuit, an interconnection layer having a first contact and a first electrode formed on a semiconductor substrate, and an organic photo-diode formed on the interconnection layer. For example, the organic photo-diode includes an insulation layer formed on the first electrode, a second electrode and a photo-electric conversion region formed between the first contact, the insulation layer and the second electrode. The photo-electric conversion region includes an electron donating organic material and an electron accepting organic material. The organic photo-diode may further include a second contact electrically connected to the first contact. The horizontal distance between the second contacts and the insulation layer may be less than or equal to a few micrometers, for example, 10 micrometers. | 02-26-2015 |
20150156437 | IMAGE SENSOR, CONFIGURED TO REGULATE A QUANTITY OF LIGHT ABSORBED THEREBY, ELECTRONIC DEVICE INCLUDING THE SAME, AND IMAGE SENSING METHOD - An image sensor and an image sensing method are provided. The image sensor includes a semiconductor substrate; a photoelectric converter comprising a bias unit, which comprises a first electrode and a second electrode, and an organic photoelectric conversion layer, which selectively absorbs light and converts the light into electrons; a via contacting the second electrode to connect the photoelectric converter with the semiconductor substrate; a storage node configured to store electrons; a read-out unit to converts charge transferred from the storage node into an image signal; a pixel array comprising a plurality of pixels, each of which comprises an intermediate insulating layer; and an output circuit configured to read out the image signal from the pixel array. The quantity of light received by the organic photoelectric conversion layer is adjusted by a bias change of the bias unit. | 06-04-2015 |
Patent application number | Description | Published |
20080218652 | Liquid crystal display device - A liquid crystal display device for reducing power consumption is disclosed. | 09-11-2008 |
20110056837 | POROUS ELECTROFORMED SHELL FOR PATTERNING AND MANUFACTURING METHOD THEREOF - Disclosed are a porous electroformed shell for forming a grain pattern and a manufacturing method thereof. The method includes the step of implanting a fiber into a patterned surface of a negative-type silicone cast; applying, laminating, and curing an epoxy resin on the patterned surface of the negative-type silicone cast, and transferring the fiber from the negative-type silicone cast to an epoxy mandrel during demolding of the epoxy mandrel; forming a conductive thin film on the patterned surface of the epoxy mandrel, and causing the patterned surface to be conductive; removing the fiber having the conductive thin film from a surface of the epoxy mandrel; forming an electrodeposited layer by electrodepositing an electroforming metal on the conductive thin film while generating and growing a fine pore at a position of a hole due to the removal of the fiber; and demolding the electrodeposited layer having the fine pore from the epoxy mandrel. Through the disclosed method, precise control on a diameter and distribution of a fine pore can be simply and efficiently can be carried out. | 03-10-2011 |
20110128485 | LIQUID CRYSTAL DISPLAY DEVICE - An LCD device is disclosed. The LCD device includes a liquid crystal panel configured to include a bonding portion formed in its one edge, pluralities of gate and data lines arranged on it, and pixel regions defined by the gate and data lines. The bonding portion includes: first metal patterns formed away from each other and on a substrate of the liquid crystal panel; a gate insulation film and a protective layer sequentially formed to cover the first metal patterns; and a second metal pattern formed on the protective layer and electrically connected to the first metal patterns partially exposed by contact holes which are formed by partially etching the gate insulation film and protective layer. | 06-02-2011 |
20120024709 | POROUS ELECTROFORMED SHELL FOR PATTERNING AND MANUFACTURING METHOD THEREOF - Disclosed are a porous electroformed shell for forming a grain pattern and a manufacturing method thereof. The method includes the step of causing an epoxy mandrel to be conductive by formation of a conductive thin film thereon; transferring a non-conductive masking pattern on the conductive thin film by using a masking film; generating and growing a fine pore at the position of the non-conductive masking pattern through electroforming; and demolding an electrodeposited layer having the fine pore from the epoxy mandrel, Through the disclosed method, precise control, both as a whole or in part, on a diameter, a formation position, and a density of a fine pore can be simply, economically, and efficiently can be carried out according to various curved shapes of the electroformed shell. Accordingly, in forming the surface of a high-quality surface skin material or a plastic molded product with a predetermined pattern, when the fine pore is used as a decompression suction hole or an air vent, a predetermined pattern can be efficiently and economically obtained in such a manner that it has a regular position, a regular directionality, sharp radii, and minimized deformation. | 02-02-2012 |
Patent application number | Description | Published |
20090075463 | METHOD OF FABRICATING T-GATE - A method of fabricating a T-gate is provided. The method includes the steps of: forming a photoresist layer on a substrate; patterning the photoresist layer formed on the substrate and forming a first opening; forming a first insulating layer on the photoresist layer and the substrate; removing the first insulating layer and forming a second opening to expose the substrate; forming a second insulating layer on the first insulating layer; removing the second insulating layer and forming a third opening to expose the substrate; forming a metal layer on the second insulating layer on which the photoresist layer and the third opening are formed; and removing the metal layer formed on the photoresist layer. Accordingly, a uniform and elaborate opening defining the length of a gate may be formed by deposition of the insulating layer and a blanket dry etching process, and thus a more elaborate micro T-gate electrode may be fabricated. | 03-19-2009 |
20090140439 | METHOD OF MANUFACTURING A CHIP AND A CHIP STACK - Provided are a chip, a chip stack, and a method of manufacturing the Same. A plurality of chips which each include: at least one pad formed on a wafer; and a metal layer which protrudes up to a predetermined thickness from the bottom of the wafer and is formed in a via hole exposing the bottom of the pad are stacked such that the pad and the metal layer of adjacent chips are bonded. This leads to a simplified manufacturing process, high chip performance and a small footprint for a chip stack. | 06-04-2009 |
20100133586 | HETEROJUNCTION BIPOLAR TRANSISTOR AND METHOD OF FORMING THE SAME - Provided are a heterojunction bipolar transistor and a method of forming the same. The method includes forming an emitter electrode on an emitter capping pattern, a base electrode on a base pattern, and a collector electrode on a subcollector pattern, the subcollector pattern, the base pattern, an emitter pattern, and the emitter capping pattern being provided to a substrate; patterning a protection insulation layer and a first dummy pattern covering the emitter electrode, the base electrode, and the collector electrode, to expose the emitter electrode, the base electrode, and the collector electrode; forming a second dummy pattern to electrically separate the emitter electrode, the base electrode, and the collector electrode; forming, on the substrate provided with the second dummy pattern, an emitter electrode interconnection connected to the emitter electrode, a base electrode interconnection connected to the base electrode, and a collector electrode interconnection connected to the collector electrode; and removing the first and second dummy patterns. | 06-03-2010 |
Patent application number | Description | Published |
20110115016 | SEMICONDUCTOR DEVICE - A semiconductor device includes a substrate with one or more active regions and an isolation layer formed to surround an active region and to extend deeper into the substrate than the one or more active regions. The semiconductor further includes a gate electrode, which covers a portion of the active region, and which has one end ;portion thereof extending over the isolation layer. | 05-19-2011 |
20110115020 | SEMICONDUCTOR DEVICE - A semiconductor device includes a second conductive-type deep well configured above a substrate. The deep well includes an ion implantation region and a diffusion region. A first conductive-type first well is formed in the diffusion region. A gate electrode extends over portions of the ion implantation region and of the diffusion region, and partially overlaps the first well. The ion implantation region has a uniform impurity concentration whereas the impurity concentration of the diffusion region varies from being the highest concentration at the boundary interface between the ion implantation region and the diffusion region to being the lowest at the portion of the diffusion region that is the farthest away from the boundary interface. | 05-19-2011 |
20110127612 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A semiconductor device includes: an active region configured over a substrate to include a first conductive-type first deep well and second conductive-type second deep well forming a junction therebetween. A gate electrode extends across the junction and over a portion of first conductive-type first deep well and a portion of the second conductive-type second deep well. A second conductive-type source region is in the first conductive-type first deep well at one side of the gate electrode whereas a second conductive-type drain region is in the second conductive-type second deep well on another side of the gate electrode. A first conductive-type impurity region is in the first conductive-type first deep well surrounding the second conductive-type source region and extending toward the junction so as to partially overlap with the gate electrode and/or partially overlap with the second conductive-type source region. | 06-02-2011 |
20140021541 | SEMICONDUCTOR DEVICE - A semiconductor device includes a second conductive-type deep well configured above a substrate. The deep well includes an ion implantation region and a diffusion region. A first conductive-type first well is formed in the diffusion region. A gate electrode extends over portions of the ion implantation region and of the diffusion region, and partially overlaps the first well. The ion implantation region has a uniform impurity concentration whereas the impurity concentration of the diffusion region varies from being the highest concentration at the boundary interface between the ion implantation region and the diffusion region to being the lowest at the portion of the diffusion region that is the farthest away from the boundary interface. | 01-23-2014 |
20140021542 | SEMICONDUCTOR DEVICE - A semiconductor device includes a second conductive-type deep well configured above a substrate. The deep well includes an ion implantation region and a diffusion region. A first conductive-type first well is formed in the diffusion region. A gate electrode extends over portions of the ion implantation region and of the diffusion region, and partially overlaps the first well. The ion implantation region has a uniform impurity concentration whereas the impurity concentration of the diffusion region varies from being the highest concentration at the boundary interface between the ion implantation region and the diffusion region to being the lowest at the portion of the diffusion region that is the farthest away from the boundary interface. | 01-23-2014 |
20140030862 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A semiconductor device includes: an active region configured over a substrate to include a first conductive-type first deep well and second conductive-type second deep well forming a junction therebetween. A gate electrode extends across the junction and over a portion of first conductive-type first deep well and a portion of the second conductive-type second deep well. A second conductive-type source region is in the first conductive-type first deep well at one side of the gate electrode whereas a second conductive-type drain region is in the second conductive-type second deep well on another side of the gate electrode. A first conductive-type impurity region is in the first conductive-type first deep well surrounding the second conductive-type source region and extending toward the junction so as to partially overlap with the gate electrode and/or partially overlap with the second conductive-type source region. | 01-30-2014 |
20140151793 | SEMICONDUCTOR DEVICE - A semiconductor device includes a substrate with one or more active regions and an isolation layer formed to surround an active region and to extend deeper into the substrate than the one or more active regions. The semiconductor further includes a gate electrode, which covers a portion of the active region, and which has one end portion thereof extending over the isolation layer. | 06-05-2014 |
20140306270 | MULTI-SOURCE JFET DEVICE - A junction field-effect transistor (JFET) device is provided. The JFET includes a drain region, a source region, and a junction gate region disposed between the drain region and the source region, and the source region includes two or more source terminals. | 10-16-2014 |
20140353749 | SEMICONDUCTOR POWER DEVICE AND METHOD OF FABRICATING THE SAME - A semiconductor power device and a method of fabricating the same are provided. The semiconductor power device involving: a first conductivity type semiconductor substrate; an epitaxial layer formed on the semiconductor substrate; a second conductivity type well formed in the semiconductor substrate and the epitaxial layer; a drain region formed in the well; an oxide layer that insulates a gate region from the drain region; a first conductivity type buried layer formed in the well; a second conductivity type drift region surrounding the buried layer; and a second conductivity type TOP region formed between the buried layer and the oxide layer. | 12-04-2014 |