Patent application number | Description | Published |
20080222584 | Method in a Computer-aided Design System for Generating a Functional Design Model of a Test Structure - A method in a computer-aided design system for generating a functional design model of a test structure. The test structure is used for performing device-specific testing and acquiring parametric data on integrated circuits, such that each chip generated from the functional design model is tested individually without excessive test time requirements, additional silicon, or special test equipment. The method includes a functional representation of a device test structure integrated into an IC design which tests a set of dummy devices that are identical or nearly identical to a selected set of functional representations of devices contained in the IC. The test structures are integrated from a device under test (DUT) library according to customer requirements and design requirements. The selected test structures are further prioritized and assigned to design elements within the design in order of priority. Placement algorithms use design, layout, and manufacturing requirements to place the selected test structures into the final layout of the design. | 09-11-2008 |
20080231307 | TESTING METHOD USING A SCALABLE PARAMETRIC MEASUREMENT MACRO - Disclosed are testing method embodiments in which, during post-manufacture testing, parametric measurements are taken from on-chip parametric measurement elements and used to optimize manufacturing in-line parametric control learning and/or to optimize product screening processes. Specifically, these post-manufacture parametric measurements can be used to disposition chips without shipping out non-conforming products, without discarding conforming products, and without requiring high cost functional tests. They can also be used to identify yield sensitivities to parametric variations from design and to provide feedback for manufacturing line improvements based on the yield sensitivities. Additionally, a historical database regarding the key parameters that are monitored at both the fabrication and post-fabrication levels can be used to predict future yield and, thereby, to preemptively improve the manufacturing line and/or also to update supply chain forecasts. | 09-25-2008 |
20080270951 | Embedded Test Circuit For Testing Integrated Circuits At The Die Level - A design structure instantiated in a machine readable medium; the design structure includes all of the necessary information for designing a test circuit. The test circuit is used for performing device-specific testing and acquiring parametric data on integrated circuits, for example ASICs, such that each chip is tested individually without excessive test time requirements, additional silicon, or special test equipment. The design structure includes at least one test circuit and may be integrated into an IC design, along with all of the required manufacturing data for producing a final design structure. The final design structure may be in the form of a GDS storage medium or another form of medium suitable for sending the final data structure to, for example, a manufacturer, foundry, customer, or other design house. | 10-30-2008 |
20080270954 | System for and Method of Integrating Test Structures into an Integrated Circuit - A system and method for performing device-specific testing and acquiring parametric data on integrated circuits, for example ASICs, such that each chip is tested individually without excessive test time requirements, additional silicon, or special test equipment. The testing system includes a device test structure integrated into unused backfill space in an IC design which tests a set of dummy devices that are identical to a selected set of devices contained in the IC. The device test structures are selected from a library according to customer requirements and design requirements. The selected test structures are further prioritized and assigned to design elements within the design in order of priority. Placement algorithms use design, layout, and manufacturing requirements to place the selected test structures into the final layout of the design to be manufactured. | 10-30-2008 |
20090001336 | PHASE CHANGE MATERIAL BASED TEMPERATURE SENSOR - A block of phase change material located in a semiconductor chip is reset to an amorphous state. The block of phase change material may be connected to an internal resistance measurement circuit that can transmit the measured resistance data to input/output pads either in an analog output format or in a digital output format. Depending on the ambient temperature, the resistance of the block of phase change material changes. By measuring a fractional resistance change compared to the resistance of the phase change material at a calibration temperature, the temperature of the region around the phase change material can be accurately measured. A logic decoder and an input/output circuit may be employed between the internal resistance measurement circuit and the input/output pads. A plurality of temperature sensing circuits containing phase change material blocks may be employed in the semiconductor chip to enable an accurate temperature profiling during chip operation. | 01-01-2009 |
20090039912 | Method of Acceptance for Semiconductor Devices - A method of accepting semiconductor chips is provided using on-chip parametric measurements. An on-chip parametric measurement structure is determined for each parameter in a set of parametric acceptance criteria. An on-chip parametric measurement macro is included in a design of each semiconductor chip for each identified on-chip parametric measurement structure. Each on-chip parametric measurement macro is tested to determine compliance of the semiconductor chip to the set of parametric acceptance criteria. Compliance to the set of parametric acceptance criteria is validated. | 02-12-2009 |
20090055826 | Multicore Processor Having Storage for Core-Specific Operational Data - An integrated circuit includes a plurality of processor cores and a readable non-volatile memory that stores information expressive of at least one operating characteristic for each of the plurality of processor cores. Also disclosed is a method to operate a data processing system, where the method includes providing a multicore processor that contains a plurality of processor cores and a readable non-volatile memory that stores information, determined during a testing operation, that is indicative of at least a maximum operating frequency for each of the plurality of processor cores. The method further includes operating a scheduler coupled to an operating system and to the multicore processor, where the scheduler is operated to be responsive at least in part to information read from the memory to schedule the execution of threads to individual ones of the processor cores for a more optimal usage of energy. | 02-26-2009 |
20090068772 | ACROSS RETICLE VARIATION MODELING AND RELATED RETICLE - Methods of modeling across reticle variations and a related reticle are disclosed. One embodiment of the method includes defining a test for determination across a multiple chip wafer; identifying a measurement structure for performing the test; implementing the measurement structure on the multiple chip wafer using a reticle including the measurement structure between copies of the multiple chips on the reticle, wherein no one of the multiple chips covers an entirety of the reticle; performing the test on the multiple chip wafer using the measurement structure to acquire data across the reticle; using data from the performing to establish an across reticle variation model; and using the across reticle variation model to predict across chip variation for at least one of the multiple chips. | 03-12-2009 |
20090070722 | METHOD FOR GENERATING DEVICE MODEL OVERRIDES THROUGH THE USE OF ON-CHIP PARAMETRIC MEASUREMENT MACROS - A method generates area dependent design rules during semiconductor technology qualification by identifying the layout parametric variation in a semiconductor technology and establishing layout dependent design rules. This method applies the area dependent design rules to identify design sensitivity to area dependent design rules and to optimize semiconductor libraries and/or semiconductor products using an on-chip parametric monitor by designing processes for library elements, semiconductor design systems, and/or custom semiconductor products using the layout dependent design rules. | 03-12-2009 |
20090083690 | SYSTEM FOR AND METHOD OF INTEGRATING TEST STRUCTURES INTO AN INTEGRATED CIRCUIT - A system and method for performing device-specific testing and acquiring parametric data on integrated circuits, for example ASICs, such that each chip is tested individually without excessive test time requirements, additional silicon, or special test equipment. The testing system includes a device test structure integrated into an IC design which tests a set of dummy devices that are identical or nearly identical to a selected set of devices contained in the IC. The test structures are built from a device under test (DUT) library according to customer requirements and design requirements. The selected test structures are further prioritized and assigned to design elements within the design in order of priority. Placement algorithms use design, layout, and manufacturing requirements to place the selected test structures into the final layout of the design to be manufactured. | 03-26-2009 |
20090106712 | RELIABILITY EVALUATION AND SYSTEM FAIL WARNING METHODS USING ON CHIP PARAMETRIC MONITORS - A method of reliability evaluation and system fail warning using on chip parametric monitors. The method includes determining impact of parametric variation on reliability by identifying key parametric questions to be answered by stress, identifying parametric macros for each parameter, and identifying layout sensitive areas of evaluation. The process can also include a set of parametric macros in one of a test site or a product to be stressed, testing the set of parametric macros prior to start of stress and at each stress read out, and setting life time parameter profile for technology. | 04-23-2009 |
20090210201 | SYSTEM AND METHOD TO PREDICT CHIP IDDQ AND CONTROL LEAKAGE COMPONENTS - A method for predicting and controlling leakage wherein an IDDQ prediction macro is placed in a plurality of design topographies and data is collected using the IDDQ prediction macro. The IDDQ prediction macro is configured to measure subthreshold leakage and gate leakage for at least one device type in a semiconductor test site and in scribe lines using the IDDQ prediction macro and establish a leakage model. The method correlates the semiconductor test site measurements and the scribe line measurements to establish scribe line control limits, predicts product leakage; and sets subthreshold leakage limits and gate leakage limits for each product using the leakage model. | 08-20-2009 |
20090251167 | Array-Based Early Threshold Voltage Recovery Characterization Measurement - A method and test circuit provide measurements to aid in the understanding of time-varying threshold voltage changes such as negative bias temperature instability and positive bias temperature instability. In order to provide accurate measurements during an early stage in the threshold variation, a current generating circuit is integrated on a substrate with the device under test, which may be a device selected from among an array of devices. The current generating circuit may be a current mirror that responds to an externally-supplied current provided by a test system. A voltage source circuit may be included to hold the drain-source voltage of the transistor constant, although not required. A stress is applied prior to the measurement phase, which may include a controllable relaxation period after the stress is removed. | 10-08-2009 |
20090282375 | Circuit And Method Using Distributed Phase Change Elements For Across-Chip Temperature Profiling - Disclosed is an across-chip temperature sensing circuit and an associated method that can be used to profile the across-chip temperature gradient. The embodiments incorporate a plurality of phase change elements distributed approximately evenly across the semiconductor chip. These phase change elements are programmed to have essentially the same amorphous resistance. Temperature-dependent behavior exhibited by each of the phase change elements individually is compared to a reference (e.g., generated by a discrete reference phase change element, generated by another one of the phase change elements, or generated by an external reference) in order to profile the temperature gradient across the semiconductor chip. Once profiled, this temperature gradient can be used to redesign and/or relocate functional cores, to set stress limits for qualification of functional cores and/or to adjust operating specifications of functional cores. | 11-12-2009 |
20090295402 | VOLTAGE ISLAND PERFORMANCE/LEAKAGE SCREEN MONITOR FOR IP CHARACTERIZATION - A method is provided for characterizing performance of a chip having at least one voltage island and at least one performance screen ring oscillator (PSRO). An on-chip performance monitor (OCPM) is incorporated on the voltage island. Performance measurements of the voltage island are generated with only the voltage island under power. Performance measurements of the performance screen ring oscillator (PSRO) are generated with only the voltage island under power. Performance measurements of the performance screen ring oscillator (PSRO) is compared to the performance measurements of the on-chip performance monitor (OCPM) to determine a systematic offset due to the voltage island. Performance models are adjusted using the systematic offset due to the voltage island. | 12-03-2009 |
20100244132 | Methods for Normalizing Strain in Semiconductor Devices and Strain Normalized Semiconductor Devices - A method of normalizing strain in semiconductor devices and normalized strain semiconductor devices. The method includes: forming first and second field effect transistors of an integrated circuit; forming a stress layer over the first and second field effect transistors, the stress layer inducing strain in channel regions of the first and second field effect transistors; and selectively thinning the stress layer over at least a portion of the second field effect transistor. | 09-30-2010 |
20100254425 | PHASE CHANGE MATERIAL BASED TEMPERATURE SENSOR - A block of phase change material located in a semiconductor chip is reset to an amorphous state. The block of phase change material may be connected to an internal resistance measurement circuit that can transmit the measured resistance data to input/output pads either in an analog output format or in a digital output format. Depending on the ambient temperature, the resistance of the block of phase change material changes. By measuring a fractional resistance change compared to the resistance of the phase change material at a calibration temperature, the temperature of the region around the phase change material can be accurately measured. A logic decoder and an input/output circuit may be employed between the internal resistance measurement circuit and the input/output pads. A plurality of temperature sensing circuits containing phase change material blocks may be employed in the semiconductor chip to enable an accurate temperature profiling during chip operation. | 10-07-2010 |
20110107291 | DESIGN SYSTEM AND METHOD THAT, DURING TIMING ANALYSIS, COMPENSATES FOR REGIONAL TIMING VARIATIONS - Disclosed are embodiments that allow for compensation of regional timing variations during timing analysis and, optionally, allow for optimize placement of critical paths, as a function of such regional timing variations. Based on an initial placement of devices for an integrated circuit chip, regional variations in one or more physical conditions that impact device timing (e.g., polysilicon perimeter density, average distance of devices to a well edge, average reflectivity) are mapped. Then, using a table that associates different derating factors with different levels of the physical condition(s), derating factors are assigned to different regions on the map. Next, a timing analysis is performed such that, for each region, delay of any path within that region is derated by the assigned derating factor. The map information can also be used when establishing a final placement of the devices on the integrated circuit chip in order to optimize placement of critical paths. | 05-05-2011 |
20120105240 | RELIABILITY EVALUATION AND SYSTEM FAIL WARNING METHODS USING ON CHIP PARAMETRIC MONITORS - A method of reliability evaluation and system fail warning using on chip parametric monitors. The method includes determining impact of parametric variation on reliability by identifying key parametric questions to be answered by stress, identifying parametric macros for each parameter, and identifying layout sensitive areas of evaluation. The process can also include a set of parametric macros in one of a test site or a product to be stressed, testing the set of parametric macros prior to start of stress and at each stress read out, and setting life time parameter profile for technology. | 05-03-2012 |
20130032894 | METHODS FOR NORMALIZING STRAIN IN SEMICONDCUTOR DEVICES AND STRAIN NORMALIZED SEMICONDUCTOR DEVICES - A method of normalizing strain in semiconductor devices and normalized strain semiconductor devices. The method includes: forming first and second field effect transistors of an integrated circuit; forming a stress layer over the first and second field effect transistors, the stress layer inducing strain in channel regions of the first and second field effect transistors; and selectively thinning the stress layer over at least a portion of the second field effect transistor. | 02-07-2013 |
20130113514 | SPEED BINNING FOR DYNAMIC AND ADAPTIVE POWER CONTROL - A plurality of digital circuits are manufactured from an identical circuit design. A power controller is operatively connect to the digital circuits, and a non-volatile storage medium is operatively connected to the power controller. The digital circuits are classified into different voltage bins, and each of the voltage bins has a current leakage limit. Each of the digital circuits has been previously tested to operate within a corresponding current leakage limit of a corresponding voltage bin into which each of the digital circuits has been classified. The non-volatile storage medium stores boundaries of the voltage bins as speed-binning test data. The power controller controls power-supply signals applied differently for each of the digital circuits based on which bin each of the digital circuit has been classified and the speed-binning test data. | 05-09-2013 |
20130124133 | PRODUCT PERFORMANCE TEST BINNING - A method, test system and computer program product and system for voltage binning integrated circuit chips. The method includes selecting or changing a voltage bin of an integrated circuit chip using functional testing of data paths of the integrated circuit chip. | 05-16-2013 |
20130326442 | RELIABILITY EVALUATION AND SYSTEM FAIL WARNING METHODS USING ON CHIP PARAMETRIC MONITORS - A method of reliability evaluation and system fail warning using on chip parametric monitors. The method includes determining impact of parametric variation on reliability by identifying key parametric questions to be answered by stress, identifying parametric macros for each parameter, and identifying layout sensitive areas of evaluation. The process can also include a set of parametric macros in one of a test site or a product to be stressed, testing the set of parametric macros prior to start of stress and at each stress read out, and setting life time parameter profile for technology. | 12-05-2013 |
20140380261 | SEMICONDUCTOR DEVICE RELIABILITY MODEL AND METHODOLOGIES FOR USE THEREOF - Systems and methods for semiconductor device reliability qualification during semiconductor device design. A method is provided that includes defining performance process window bins for a performance window. The method further includes determining at least one failure mechanism for each bin assignment. The method further includes generating different reliability models when the at least one failure mechanism is a function of the process window, and generating common reliability models when the at least one failure mechanism is not the function of the process window. The method further includes identifying at least one risk factor for each bin assignment, and generating aggregate models using a manufacturing line distribution. The method further includes determining a fail rate by bin and optimizing a line center to minimize product fail rate. The method further includes determining a fail rate by bin and scrapping production as a function of a manufacturing line excursion event. | 12-25-2014 |
20150033081 | IN-SITU COMPUTING SYSTEM FAILURE AVOIDANCE - A remaining time to replace can be updated taking into account time variation of a failure mechanism of a device. Starting with an initial remaining time to replace, an effective operating time can be determined periodically based on an operating parameter measured at a tracking interval, and remaining time to replace can be updated by subtracting the effective operating time. The technique can be applied to multiple failure mechanisms and to multiple devices and/or components each having multiple failure mechanisms. | 01-29-2015 |