Patent application number | Description | Published |
20120215497 | MEMS Modeling System and Method - A system and method for modeling microelectromechanical devices is disclosed. An embodiment includes separating the microelectromechanical design into separate regions and modeling the separate regions separately. Parametric parameters or parametric equations may be utilized in the separate models. The separate models may be integrated into a MEMS device model. The MEMS device model may be tested and calibrated, and then may be used to model new designs for microelectromechanical devices. | 08-23-2012 |
20140062739 | BUFFER OFFSET MODULATION - One or more techniques for buffer offset modulation or buffer offset cancelling are provided herein. In an embodiment, an output for a sigma-delta analog digital converter (ADC) is provided using an output of a first chop-able buffer (FB) and an output of a second chop-able buffer (SB). For example, the output of the FB is associated with a first offset, the output of the SB is associated with a second offset, and the output of the ADC includes an ADC offset associated with the first offset and the second offset. In an embodiment, buffer offset modulation is provided by modulating the ADC offset using an offset rotation. In an example, the offset rotation is based at least in part on a reference clock and the output of the ADC. The buffer offset modulation mitigates the first offset or the second offset, where such offsets are generally undesired. | 03-06-2014 |
20140139246 | Wafer Temperature Sensing Methods and Related Semiconductor Wafer - A method includes measuring a first voltage across a test diode on a semiconductor wafer while injecting a first current into the test diode, measuring a second voltage across the test diode while injecting a second current into the test diode, and determining temperature of a region proximate the test diode according to difference between the first voltage and the second voltage. | 05-22-2014 |
20140304667 | MEMS Modeling System and Method - A system and method for modeling microelectromechanical devices is disclosed. An embodiment includes separating the microelectromechanical design into separate regions and modeling the separate regions separately. Parametric parameters or parametric equations may be utilized in the separate models. The separate models may be integrated into a MEMS device model. The MEMS device model may be tested and calibrated, and then may be used to model new designs for microelectromechanical devices. | 10-09-2014 |
20150129936 | Biosensor Device and Related Method - A device includes a biosensor, a sensing circuit electrically connected to the biosensor, a quantizer electrically connected to the sensing circuit, a digital filter electrically connected to the quantizer, a selective window electrically connected to the digital filter, and a decision unit electrically connected to the selective window. | 05-14-2015 |
20150160323 | Biosensor Calibration System and Related Method - A device includes a first biosensor of a biosensor array; a second biosensor of a biosensor array; a readout circuit electrically connected to the biosensor array; a decoder electrically connected to the biosensor array; a voltage generator electrically connected to the biosensor array; and a decision system electrically connected to the voltage generator and the readout circuit. | 06-11-2015 |
Patent application number | Description | Published |
20110260746 | BUILT-IN SELF-TEST CIRCUIT FOR LIQUID CRYSTAL DISPLAY SOURCE DRIVER - A built-in self-test (BIST) circuit for a liquid crystal display (LCD) source driver includes at least one digital-to-analog converter (DAC) and at least one buffer coupled to the respective DAC, wherein the buffer is reconfigurable as a comparator. A first input signal and a second input signal are coupled to the comparator. The first input signal is a predetermined reference voltage level. The second input signal is a test offset voltage in a test range. | 10-27-2011 |
20120187983 | FREQUENCY GENERATOR - A mechanical frequency generator has a first mechanical resonator and a second mechanical resonator and a circuit connected with the first and second mechanical resonators. The first and second mechanical resonators having substantially the same resonator frequency coefficients as a function of an environment of the first and the second mechanical resonators. The first mechanical resonator differing in size from the second mechanical resonator. The circuit adapted to generate a difference frequency signal responsive to the first and second mechanical resonator frequency signals and based on the first and the second predetermined resonant frequencies. | 07-26-2012 |
20120218235 | Systems And Methods Providing Active And Passive Charge Sharing In A Digital To Analog Converter - A method for converting a multi-bit digital value to an analog value. The method includes, in a first conversion cycle, converting a first set of digital bits to a first analog voltage using passive charge-sharing. The method also includes, in a second conversion cycle, converting a second set of digital bits to a second analog voltage added to the first analog voltage using active charge-sharing. The first set of digital bits and the second set of digital bits are different bits of the multi-bit digital value. | 08-30-2012 |
20130195142 | SMALL AREA HIGH PERFORMANCE CELL-BASED THERMAL DIODE - A thermal sensing system includes a circuit having a layout including standard cells arranged in rows and columns. First and second current sources provide first and second currents, respectively. The thermal sensing system includes thermal sensing units, first and second switching modules, and an analog to digital converter (ADC). Each thermal sensing unit is configured to provide a voltage drop dependent on a temperature at that thermal sensing unit. The first switching module is configured to select one of the thermal sensing units. The second switching module includes at least one switch controllable by a control signal. The at least one switch is configured to selectively couple the thermal sensing units, based on the control signal, to one of the first and second current sources, via the first switching module. The ADC is configured to convert an analog voltage, provided by the selected thermal sensing unit, to a digital value. | 08-01-2013 |
20130213139 | MEMS VACUUM LEVEL MONITOR IN SEALED PACKAGE - A vacuum sensor for sensing vacuum in a sealed enclosure is provided. The sealed enclosure includes active MEMS devices desired to be maintained in vacuum conditions. The vacuum sensor includes a motion beam anchored to an internal surface in the sealed enclosure. A driving electrode is disposed beneath the motion beam and a bias is supplied to cause the motion beam to deflect through electromotive force. A sensing electrode is also provided and detects capacitance between the sensing electrode disposed on the internal surface, and the motion beam. Capacitance changes as the gap between the motion beam and the sensing electrode changes. The amount of deflection is determined by the vacuum level in the sealed enclosure. The vacuum level in the sealed enclosure is thereby sensed by the sensing electrode. | 08-22-2013 |
20130264610 | TEMPERATURE STABILITIZED MEMS - A semiconductor device with temperature control system. Embodiments of the device may include a MEMS chip including a first heater with a dedicated first temperature control loop and a CMOS chip including a second heater with a dedicated second temperature control loop. Each control loop may have a dedicated temperature sensor for controlling the thermal output of each heater. The first heater and sensor are disposed proximate to a MEMS device in the MEMS chip for direct heating thereof. The temperature of the MEMS chip and CMOS chip are independently controllable of each other via the temperature control loops. | 10-10-2013 |
20130285190 | Layout of a MOS Array Edge with Density Gradient Smoothing - A multi-step density gradient smoothing layout style is disclosed in which a plurality of unit cells are arranged into an array with a feature density. One or more edges of the array is bordered by a first edge sub-array which has a feature density that is less than the feature density of the array. The first edge sub-array is bordered by second edge sub-array which has a feature density that is less than the feature density of the first edge sub-array, and is approaching that of the background circuitry. | 10-31-2013 |
20140092939 | Thermal Sensor with Second-Order Temperature Curvature Correction - Some embodiments of the present disclosure relate to a stacked integrated chip structure having a thermal sensor that detects a temperature of one or a plurality of integrated chips. In some embodiments, the stacked integrated chip structure has a main integrated chip and a secondary integrated chip located on an interposer wafer. The main integrated chip has a reference voltage source that generates a bias current. The secondary integrated chip has a second thermal diode that receives the bias current and based thereupon generates a second thermal sensed voltage and a second reference voltage that is proportional to a temperature of the secondary integrated chip. A digital thermal sensor within the main integrated chip determines a temperature of the secondary integrated chip based upon as comparison of the second thermal sensed voltage and the reference voltage. | 04-03-2014 |
20140097902 | Systems and Methods a High Gain Bandwidth Low Power Trans-Impedance Voltage Gain Amplifier (TIVA) Topology - An amplifier and oscillator system includes a MEMS resonator and a two stage amplifier topology. The MEMS resonator is configured to generate a resonator signal. The two-stage amplifier topology is configured to amplify the resonator signal with a selected trans-impedance gain. Additionally, the two stage amplifier topology yields a feedback resistance that provides the selected trans-impedance gain. | 04-10-2014 |
20140159932 | ARRANGEMENT FOR DIGITAL-TO-ANALOG CONVERTER - Among other things, an arrangement for a digital-to-analog converter (DAC) is provided herein. In some embodiments, a metal-oxide semiconductor (MOS) array of the DAS comprises one or more cells respectively comprising one or more current sources. The current sources comprise one or more transistors having a horizontal gate layout. A switch arrangement of the DAS, to which the MOS array is connected, comprises one or more transistors having a vertical gate layout. Accordingly, in some embodiments, a DAC is provided which comprises transistors having a vertical gate layout and transistors having a horizontal gate layout. | 06-12-2014 |
20140211905 | RATIO METER OF A THERMAL SENSOR - A ratio meter includes a converter circuit, a first counter, a delay circuit, and a second counter. The converter circuit is configured to receive a temperature-independent signal, to convert the received temperature-independent signal into a first frequency signal during a first phase, to receive a temperature-dependent signal, and to convert the temperature-dependent signal into a second frequency signal during a second phase. The first counter is configured to receive the first frequency signal and to generate a control signal by counting a predetermined number of pulses of the first frequency signal count. The delay circuit is configured to delay the control signal for a predetermined time delay. The second counter is configured to receive the second frequency signal and to generate a count value by counting the second frequency signal. | 07-31-2014 |
20150125872 | FET SENSING CELL AND METHOD OF IMPROVING SENSITIVITY OF THE SAME - The present disclosure provides a device, such as a FET sensing cell, which includes a first dielectric layer over a substrate, an active layer over the first dielectric layer, a source region in the active layer, a drain region in the active layer, a channel region in the active layer situated between the source region and the drain region, a sensing film over the channel region, a second dielectric layer over the active layer, wherein an opening is formed in the second dielectric layer and the sensing film is located within the opening, a first electrode located within the second dielectric layer and a fluidic gate region located over the second dielectric layer and extending into the opening. The present disclosure also provides a method for improving the sensitivity of a device by adjusting a sensing value. | 05-07-2015 |
20150129937 | SEMICONDUCTOR DEVICE AND SELECTIVE HEATING THEREOF - One or more semiconductor devices and array arrangements and methods of formation are provided. A semiconductor device includes an ion sensing device and a heating element proximate the ion sensing device. The ion sensing device has an active region, including a source, a drain, and a channel, the channel situated between the source and the drain. The ion sensing device also has an ion sensing film situated over the channel, and an ion sensing region over the ion sensing film. Responsive to a temperature sensed by a thermal sensor proximate the ion sensing device, the heating element is selectively activated to alter a temperature of the ion sensing region to promote desired operation of the semiconductor device, such as to function as a bio sensor. Multiple semiconductor devices can be formed into an array. | 05-14-2015 |
20150241284 | RATIO METER OF A THERMAL SENSOR - A thermal sensor comprises a converter circuit, a counting circuit, and a ratio calculator. The converter circuit is configured to convert a temperature-independent signal into a first frequency signal, and to convert a temperature-dependent signal into a second frequency signal. The counting circuit is configured to receive at least one of the first frequency signal and the second frequency signal, to count a predetermined number of pulses of the first frequency signal, and to count a number of pulses of the second frequency signal for a time period corresponding to the counting of the predetermined number of pulses of the first frequency signal. The ratio calculator is configured to calculate a ratio based on the predetermined number of pulses of the first frequency signal and the counted number of pulses of the second frequency signal. | 08-27-2015 |