Patent application number | Description | Published |
20090174522 | ARRANGEMENT COMPRISING A SHUNT RESISTOR AND METHOD FOR PRODUCING AN ARRANGEMENT COMPRISING A SHUNT RESISTOR - The invention relates to an arrangement comprising a shunt resistor with at least an electrically conductive first connecting leg and an electrically conductive second connecting leg. A resistance area of the shunt resistor is electrically connected to the first connecting leg and to the second connecting leg. The arrangement further comprises a circuit carrier with a first metallization and a second metallization. The first connecting leg is directly joined to the first metallization and the second connecting leg is directly joined to the second metallization. The resistance area of the shunt resistor is in thermal contact with the thermally conductive substrate by use of a thermal filler arranged between the resistance area and the substrate, and/or by directly contacting the resistance area with the substrate. | 07-09-2009 |
20100045361 | POWER CIRCUIT - A power circuit. One embodiment provides a circuit for driving a power transistor having a control electrode and a load path. The circuit includes a driver circuit configured to change the power transistor to a completely on or off state with the aid of a control signal supplied to the control electrode. A series circuit includes a semiconductor switching element and a capacitor. The series circuit is connected in parallel with the load path and the capacitor provides a supply voltage for the driver circuit. | 02-25-2010 |
20100085105 | CIRCUIT ARRANGEMENT INCLUDING A VOLTAGE SUPPLY CIRCUIT AND SEMICONDUCTOR SWITCHING ELEMENT - A circuit arrangement comprising a first semiconductor switching element, which has a load path and a drive terminal. A voltage supply circuit, is provided including an inductance connected in series with the load path of the first semiconductor switching element, and a capacitive charge storage arrangement, which is connected in parallel with the inductance and which has a first and a second output terminal for providing a supply voltage. | 04-08-2010 |
20100127400 | SEMICONDUCTOR MODULE AND PROCESS FOR ITS FABRICATION - A semiconductor module is disclosed, including a substrate and at least one semiconductor component in bottom contact with the substrate. The semiconductor component including a main current branch sandwiched between the bottom and top of the semiconductor component. The side edges of a barrier layer zone coincide with the side edge portions of the semiconductor component between the top and the bottom. The space above the substrate and to the side of the semiconductor component is packed with an insulating compound at least up to the level of the top of the semiconductor component. Topping the semiconductor component and parallel thereto is a patterned or unpatterned metallization connected to a contact pad on the top of the semiconductor component. | 05-27-2010 |
20100284153 | Twist-Secured Assembly of a Power Semiconductor Module Mountable on a Heat Sink - A power semiconductor module system includes a power semiconductor module, a heat sink and at least one fastener. The power semiconductor module includes a bottom side with a first thermal contact surface and the heat sink includes a top side with a second thermal contact surface. The power semiconductor module is conjoined with the heat sink by means of the at least one fastener. The power semiconductor module includes a number N | 11-11-2010 |
20100284155 | Power Semiconductor Module Including Substrates Spaced from Each Other - The invention relates to a power semiconductor module including a module underside, a module housing, and at least two substrates spaced from each other. Each substrate has a topside facing an interior of the module housing and an underside facing away from the interior of the module housing. The underside of each substrate includes at least one portion simultaneously forming a portion of the module underside. At least one mounting means disposed between two adjacent substrates enables the power semiconductor module to be secured to a heatsink. | 11-11-2010 |
20100302741 | POWER SEMICONDUCTOR MODULE FEATURING RESILIENTLY SUPPORTED SUBSTRATES AND METHOD FOR FABRICATING A POWER SEMICONDUCTOR MODULE - The invention relates to a power semiconductor module including a module housing and at least one substrate populated with at least one power semiconductor chip. The module housing has a bottom side and a top side spaced away from the bottom side in a positive vertical direction. In addition, the substrate has a bottom side facing away from an interior of the module housing. The substrate is arranged in an opening of the module housing configured in its bottom side and attached to the module housing by a resilient bonding agent for freedom of movement of the substrate parallel to the vertical direction in relation to the module housing. In the non-mounted condition of the power semiconductor module, the substrate assumes a resting position in relation to the module housing. To deflect the substrate from the resting position parallel to the vertical direction, a deflection force of 0.1 N to 100 N per mm is applied. | 12-02-2010 |
20110025406 | Power Semiconductor Component Including a Potential Probe - A power semiconductor component including a semiconductor body and two load terminals is provided. Provided furthermore is a potential probe positioned to tap an electric intermediate potential of the semiconductor body at a tap location of the semiconductor body for an electric voltage applied across the two load terminals, the intermediate potential being intermediate to the electric potentials of the two load terminals, but differing from each of the two electric potentials of the two load terminals. | 02-03-2011 |
20110148549 | Signal Transmission Arrangement - A signal transmission arrangement includes input terminals for receiving an input signal and output terminals for providing an output signal. A first transformer has a primary winding and a secondary winding, the primary winding being coupled to the input terminals. A second transformer has a primary winding and a secondary winding, the primary winding being coupled to the secondary winding of the first transformer, and the secondary winding being coupled to the output terminals. | 06-23-2011 |
20120025393 | Power Semiconductor Module, Method for Producing a Power Semiconductor Module and a Housing Element for a Power Semiconductor Module - A power semiconductor module includes a housing element into which one or more connecting lugs are inserted. Each connecting lug has a foot region on the topside of which one or more bonding connections can be produced. In order to fix the foot regions, press-on elements are provided, which press against the end of the connecting lug. | 02-02-2012 |
20120119721 | CIRCUIT ARRANGEMENT INCLUDING VOLTAGE SUPPLY CIRCUIT - A circuit arrangement comprising a first semiconductor switching element, which has a load path and a drive terminal. A voltage supply circuit, is provided including an inductance connected in series with the load path of the first semiconductor switching element, and a capacitive charge storage arrangement, which is connected in parallel with the inductance and which has a first and a second output terminal for providing a supply voltage. | 05-17-2012 |
20130285712 | Method for Driving Power Semiconductor Switches - A method for driving a controllable power semiconductor switch, having a first input terminal and first and second output terminals coupled to a voltage supply and a load, the first and second output terminals providing an output of the power semiconductor switch, includes adjusting a gradient of switch-off edges of an output current and an output voltage of the power semiconductor switch by a voltage source arrangement coupled to the input terminal. A gradient of switch-on edges of an output current and an output voltage is adjusted by a controllable current source arrangement that is coupled to the input terminal and generates a gate drive current. The profile of the gate drive current from one switching operation to a subsequent switching operation, beginning at a rise in the output current and ending at a decrease in the output voltage, is varied at most within a predefined tolerance band. | 10-31-2013 |
20150054166 | Semiconductor Arrangement, Method for Producing a Number of Chip Assemblies and Method for Producing a Semiconductor Arrangement - A semiconductor arrangement includes a plurality of chip assemblies, each of which includes a semiconductor chip having a semiconductor body with a top side and an underside, a top main electrode arranged on the top side, a bottom main electrode arranged on the underside, an electrically conductive top compensation lamina arranged on a side of the top main electrode facing away from the semiconductor body and cohesively and electrically conductively connected to the top main electrode, an electrically conductive bottom compensation lamina arranged on a side of the bottom main electrode facing away from the semiconductor body and cohesively and electrically conductively connected to the bottom main electrode, and a dielectric embedding compound enclosing the semiconductor chip laterally circumferentially in a ring-shaped fashion such that the side of the compensation laminae facing away from the semiconductor body are at least not completely covered by the embedding compound. | 02-26-2015 |
20150061100 | Semiconductor Arrangement, Method for Producing a Number of Chip Assemblies, Method for Producing a Semiconductor Arrangement and Method for Operating a Semiconductor Arrangement - A semiconductor arrangement includes top and bottom contact plates, a plurality of chip assemblies, a dielectric embedding compound, and a control electrode interconnection structure. Each chip assembly has a semiconductor chip having a semiconductor body. The semiconductor body has a top side and an opposing underside. The top side is spaced apart from the underside in a vertical direction. Each semiconductor chip has a top main electrode arranged on the top side, a bottom main electrode arranged on the underside, a control electrode arranged at the top side, and an electrically conductive top compensation die, arranged on the side of the top main electrode facing away from the semiconductor body and cohesively and electrically conductively connected to the top main electrode by means of a top connecting layer. An electric current between the top main electrode and the bottom main electrode can be controlled by means of the control electrode. | 03-05-2015 |
20150061144 | Semiconductor Arrangement, Method for Producing a Semiconductor Module, Method for Producing a Semiconductor Arrangement and Method for Operating a Semiconductor Arrangement - A semiconductor arrangement includes upper and lower contact plates and basic chip assemblies. Each chip assembly has a semiconductor chip having a semiconductor body with upper and lower spaced apart sides. An individual upper main electrode and an individual control electrode are arranged on the upper side. The chip assemblies have either respectively a separate lower main electrode arranged on the lower side of the semiconductor chip of the corresponding basic chip assembly, or a common lower main electrode, which for each of the chip assemblies is arranged on the lower side of the semiconductor body of that chip assembly. An electrical current between the individual upper main electrode and the individual or common lower main electrode is controllable by its control electrode. The chip assemblies are connected to one another with a material bonded connection by a dielectric embedding compound, forming a solid assembly. | 03-05-2015 |