Patent application number | Description | Published |
20090174385 | Integrated soft start circuits - Various circuits, including DC/DC converters can include an integrated soft-start circuit. The integrated soft-start circuit includes a PMOS transistor configured to receive a reference signal and control the current to a bipolar junction transistor when the reference signal is in a first state. First and second NMOS transistors are included in the soft-start circuit, and receive the reference signal to turn off (to release from reset) when the reference signal is in the first state. A capacitor coupled in parallel with one of the NMOS transistors controls the soft-start signal. Various different transistors types can be used depending on the desired implementation. | 07-09-2009 |
20110187342 | NON-LINEAR COMPENSATION RAMP FOR CURRENT MODE PULSE WIDTH MODULATION - A current mode direct current-to-direct current (DC-to-DC) voltage regulator controls its output voltage using a pulse width modulation (PWM) circuit that employs a non-linear compensation ramp. By employing such a PWM circuit, the output voltage can be controlled more robustly over a wider range of operating conditions. | 08-04-2011 |
20140266110 | Duty-Cycle Dependent Slope Compensation for a Current Mode Switching Regulator - An electronic circuit may output a slope compensation signal for performance of slope compensation of a current mode switching regulator. The circuit may generate a voltage across a storage device that is supplied to a voltage-to-current converter, which may generate a first current in response to the supplied voltage. Current mirror circuitry may mirror the current and supply the mirrored current to the storage device to generate the voltage. The current mirror circuitry may also mirror the current to generate a second mirrored current, which may be supplied to an output of the electronic circuit. In addition to using the first mirrored current to generate the voltage, the voltage may be generated by pulling down the voltage to ground in accordance with a duty cycle of a switching signal used for generation of an output of the current mode switching regulator. | 09-18-2014 |
20140266397 | DIGITAL SOFT START WITH CONTINUOUS RAMP-UP - A soft-start generation system is configured to generate a soft-start voltage. The soft-start generation system includes sawtooth circuitry configured to generate current having a sawtooth waveform and staircase circuitry configured to generate current having an ascending staircase waveform. A ramp-up current may be generated that is a combination of the sawtooth current and the staircase current. The ramp-up current may continuously ramp up to a predetermined current level. The soft-start voltage may be generated based on the ramp-up current. | 09-18-2014 |
20150303911 | ANALOG BREAK BEFORE MAKE SYSTEM, METHOD AND APPARATUS - A system and method of providing an analog make before break circuit includes a first transistor coupled in series with a second transistor, the first transistor being configured for conducting a high portion of an input signal, the second transistor being configured for conducting a low portion of the input signal. A third transistor is configured to interrupt a connection between the input signal and a first transistor input node, the third transistor having a third transistor threshold voltage between of about 90 and about 110 percent of a second transistor threshold voltage. A fourth transistor is configured to interrupt a connection between the input signal and a second transistor input node, the fourth transistor having a fourth transistor threshold voltage of between about 90 and about 110 percent of a first transistor threshold voltage. | 10-22-2015 |
Patent application number | Description | Published |
20100112486 | METHOD AND SYSTEM FOR PROVIDING A PERPENDICULAR MAGNETIC RECORDING HEAD - A method and system for providing a PMR pole in a magnetic recording transducer including an intermediate layer are disclosed. The method and system include providing a mask on the intermediate layer. The mask includes a line having at least one side. A hard mask layer is provided on the mask. At least a portion of the hard mask layer resides on the side(s) of the line. At least part of the hard mask layer on the side(s) of the line is removed. Thus, at least a portion of the line is exposed. The line is then removed, providing an aperture in the hard mask corresponding to the line. The method also includes forming a trench in the intermediate layer under the aperture. The trench top is wider than its bottom. The method further includes providing a PMR pole, at least a portion of which resides in the trench. | 05-06-2010 |
20100290157 | Damascene coil processes and structures - A magnetic recording head is provided. The magnetic recording head comprises a write pole and a write coil structure configured to generate a magnetic field in the write pole. The write coil structure comprises a substrate layer and a coil material disposed within the substrate layer. The write coil structure is substantially free of photoresist. A method for forming a write coil structure is also provided. The method comprises the steps of providing a substrate layer, forming a photoresist pattern mask over the substrate layer, opening a damascene trench in the substrate layer by reactive ion etching, and disposing a coil material into the damascene trench in the substrate layer. | 11-18-2010 |
20110086240 | DOUBLE PATTERNING HARD MASK FOR DAMASCENE PERPENDICULAR MAGNETIC RECORDING (PMR) WRITER - Various embodiments of the subject disclosure provide a double patterning process that uses two patterning steps to produce a write structure having a nose shape with sharp corners. In one embodiment, a method for forming a write structure on a multi-layer structure comprising a substrate and an insulator layer on the substrate is provided. The method comprises forming a hard mask layer over the insulator layer, performing a first patterning process to form a pole and yoke opening in the hard mask layer, performing a second patterning process to remove rounded corners of the pole and yoke opening in the hard mask layer, removing a portion of the insulator layer corresponding to the pole and yoke opening in the hard mask layer to form a trench in the insulator layer, and filling the trench with a magnetic material. | 04-14-2011 |
20120237878 | METHOD AND SYSTEM FOR PROVIDING A SIDE SHIELD FOR A PERPENDICULAR MAGNETIC RECORDING POLE - A method for fabricating a magnetic transducer having a nonmagnetic intermediate layer is described. A pole is provided on the intermediate layer. The pole has sides, a bottom, a top wider than the bottom and a leading bevel proximate to an ABS location. A side gap is provided adjacent to at least the sides of the pole. A bottom antireflective coating (BARC) layer is provided on the intermediate layer. The BARC layer is removable using a wet etchant and is adjacent to at least a portion of the side gap. A mask layer is provided on the BARC layer. A pattern is photolithographically transferred into the mask layer, forming a shield mask. Part of the BARC layer is exposed to the wet etchant such that the sides of the pole and the side gap are free of the BARC layer. At least a magnetic side shield is provided. | 09-20-2012 |
Patent application number | Description | Published |
20140126286 | SINGLE-LEVEL CELL ENDURANCE IMPROVEMENT WITH PRE-DEFINED BLOCKS - Techniques are disclosed for SLC blocks having different characteristics than MLC blocks such that SLC blocks will have high endurance and MLC blocks will have high reliability. A thinner tunnel oxide may be used for memory cells in SLC blocks than for memory cells in MLC blocks. A thinner tunnel oxide in SLC blocks may allow a lower program voltage to be used, which may improve endurance. A thicker tunnel oxide in MLC blocks may improve data retention. A thinner IPD may be used for memory cells in SLC blocks than for memory cells in MLC blocks. A thinner IPD may provide a higher coupling ratio, which may allow a lower program voltage. A lower program voltage in SLC blocks can improve endurance. A thicker IPD in MLC blocks can prevent or reduce read disturb. SLC blocks may have a different number of data word lines than MLC blocks. | 05-08-2014 |
20140247663 | NON-VOLATILE STORAGE WITH PROCESS THAT REDUCES READ DISTURB ON END WORDLINES - A system for reducing read disturb on edge word lines in non-volatile storage is disclosed. In one embodiment, the memory cells on edge word lines are programmed using a series of pulses that have an initial magnitude and step size between pulses that are lower than for memory cells on word lines that are not edge word lines. Additionally, when reading memory cells on word lines that are not edge word lines, the edge word lines receive a lower pass voltage than the default pass voltage applied to other unselected word lines. In another embodiment, the system applies a higher than normal bias on a neighboring word lines when reading memory cells on an edge word line. | 09-04-2014 |
20150301885 | Neighboring Word Line Program Disturb Countermeasure For Charge-Trapping Memory - Techniques are provided for reading data from memory cells which are arranged along a common charge trapping layer. One example is in a 3D stacked non-volatile memory device. Memory cells on a word line layer WLLn can be disturbed by programming of memory cells on an adjacent word line layer WLLn+1, resulting in uncorrectable errors. In this case, the memory cells on WLLn can be read in a data recovery read operation which applies an elevated pass voltage to WLLn+1. The elevated pass voltage causes a decrease and narrowing of the threshold voltages on WLLn which facilitates reading. The data recovery read operation compensates for the lower threshold voltages of the cells by lowering the control gate voltage, raising the source voltage or adjusting a sensing period, demarcation level or pre-charge level in sensing circuitry. The elevated pass voltage can be stepped up in repeated read attempts until there are no uncorrectable errors or a limit is reached. | 10-22-2015 |
20150380418 | THREE DIMENSIONAL NAND DEVICE WITH CHANNEL CONTACTING CONDUCTIVE SOURCE LINE AND METHOD OF MAKING THEREOF - A NAND memory cell region of a NAND device includes a conductive source line that extends substantially parallel to a major surface of a substrate, a first semiconductor channel that extends substantially perpendicular to a major surface of the substrate, and a second semiconductor channel that extends substantially perpendicular to the major surface of the substrate. At least one of a bottom portion and a side portion of the first semiconductor channel contacts the conductive source line and at least one of a bottom portion and a side portion of the second semiconductor channel contacts the conductive source line. | 12-31-2015 |
20160005491 | Look Ahead Read Method For Non-Volatile Memory - A read operation for selected memory cell on a selected word line compensates for program disturb which is a nonlinear function of the data state of an adjacent memory cell on an adjacent word line. When a command to perform a read operation for the selected memory cell is received, a read operation is first performed on the adjacent memory cell to determine its data state, or to classify the adjacent memory cell into a threshold voltage range which includes one or more data states, or a portion of a data state. The selected memory cell is then read using a baseline control gate voltage which does not provide compensation, and one or more elevated control gate voltages which provide compensation, to distinguish between two adjacent data states. An optimal sensing result is selected based on the data state or threshold voltage range of the adjacent memory cell. | 01-07-2016 |
20160035426 | Bias To Detect And Prevent Short Circuits In Three-Dimensional Memory Device - In a three-dimensional stacked non-volatile memory device, a short circuit in a select gate layer is detected and prevented. A short circuit may occur when charges which are accumulated in select gate lines due to plasma etching, discharge through a remaining portion of the select gate layer in a short circuit path when the select gate lines are driven. To detect a short circuit, during a testing phase, an increasing bias is applied is applied to the remaining portion while a current is measured. An increase in the current above a threshold indicates that the bias has exceed a breakdown voltage of a short circuit path. A value of the bias at this time is recorded as an optimal bias. During subsequent operations involving select gate transistors or memory cells, such as programming, erasing or reading, the optimal bias is applied when the select gate lines are driven to prevent a current flow through the short circuit. | 02-04-2016 |
20160064087 | Charge Redistribution During Erase In Charge Trapping Memory - Techniques are provided to accelerate the redistribution of the holes in connection with an erase operation, so that there will be a reduced amount of redistribution of the holes after programming. As a result, short-term charge loss after programming is reduced. In one aspect, a positive control gate voltage is applied to a set of memory cells after erase and before programming. The positive control gate voltage has a relatively low amplitude and a long duration, compared to a programming voltage. The positive control gate voltage can be adjusted based on the erase depth of the memory cells and factors such as a count of program-erase cycles, a count of erase-verify iterations, sensing of a position of the lower tail, and a cross-sectional width of a vertical pillar of a memory hole. | 03-03-2016 |
20160064090 | Charge Redistribution During Erase In Charge Trapping Memory - Techniques are provided to accelerate the redistribution of the holes in connection with an erase operation, so that there will be a reduced amount of redistribution of the holes after programming. As a result, short-term charge loss after programming is reduced. In one aspect, a positive control gate voltage is applied to a set of memory cells after erase and before programming. The positive control gate voltage has a relatively low amplitude and a long duration, compared to a programming voltage. The positive control gate voltage can be adjusted based on the erase depth of the memory cells and factors such as a count of program-erase cycles, a count of erase-verify iterations, sensing of a position of the lower tail, and a cross-sectional width of a vertical pillar of a memory hole. | 03-03-2016 |
20160093380 | MODIFYING PROGRAM PULSES BASED ON INTER-PULSE PERIOD TO REDUCE PROGRAM NOISE - Techniques are provided for more accurately programming memory cells by reducing program noise caused by charge loss in a programming pass in which the number of verify tests varies in different program loops. In an nth program loop, at least one programming characteristic is modified based on the number (N) of data states which were subject to verify tests in the n−1 | 03-31-2016 |
20160093390 | Read With Look-Back Combined With Programming With Asymmetric Boosting In Memory - A read operation compensates for program disturb when distinguishing between an erased-state and a lowest programmed data state, where the program disturb is a function of the data state of an adjacent, previously-programmed memory cell on a common charge-trapping layer. The read operation occurs in connection with a programming operation which avoids program disturb of the programmed data states by using asymmetric pass voltages. Before reading the memory cells on a selected word line (WLn), the memory cells on the adjacent, previously-programmed word line (WLn−1) are read. The read operation for WLn uses multiple read voltages—one for each data state on WLn−1, and one of the read results is selected based on the data state of the adjacent memory cell. Other read operations distinguish between each pair of adjacent programmed data states using a read voltage which is independent of the data state of the adjacent memory cell. | 03-31-2016 |
20160099058 | Programming Of Drain Side Word Line To Reduce Program Disturb And Charge Loss - Techniques are provided for programming the memory cells of a drain-side edge word line of a set of word lines before programming memory cells of any other word line of the set. Pass voltages applied to the other word lines act as stress pulses which redistribute holes in the charge-trapping material of the memory cells of the other word lines to reduce short-term charge loss and downshifting of the threshold voltage. Additionally, one or more initial program voltages used for the drain-side edge word line are relatively low and also act as stress pulses. The memory cells of the drain-side edge word line are programmed to a narrower Vth window than the memory cells of the other word lines. This compensates for a higher level of program disturb of erased state memory cells of the drain-side edge word line due to reduced channel boosting. | 04-07-2016 |
Patent application number | Description | Published |
20080197290 | Camera-based x-ray digital image detector - Disclosed herein are camera-based x-ray digital image detectors that contain an assembly of a scintillator screen, a wide-angle optical lens or fisheye lens, and a digital image sensor. Images formed by x-ray radiation on the scintillator screen are projected onto a much smaller area image sensor through a fisheye or super-wide-angle optical lens, hence forming a highly distorted image thereon. Transparent lead-contained glasses or plastics are utilized to shield image sensor from x-ray damage. Imaging distortion and light falloff caused by the lens optics are corrected by software algorithms. Sub-millimeter resolution may be achieved with reduced design complexity and substantially lower manufacturing costs. | 08-21-2008 |
20090283721 | NITRIDE-BASED RED PHOSPHORS - Embodiments of the present invention are directed to the fluorescence of a nitride-based deep red phosphor having at least one of the following novel features: 1) an oxygen content less than about 2 percent by weight, and 2) a halogen content. Such phosphors are particularly useful in the white light illumination industry, which utilizes the so-called “white LED.” The selection and use of a rare earth halide as a raw material source of not only the activator for the phosphor, but also the halogen, is a key feature of the present embodiments. The present phosphors have the general formula M | 11-19-2009 |
20100308712 | NITRIDE-BASED RED-EMITTING PHOSPHORS IN RGB RED-GREEN-BLUE LIGHTING SYSTEMS - Embodiments of the present invention are directed to nitride-based, red-emitting phosphors in red, green, and blue (RGB) lighting systems, which in turn may be used in backlighting displays and warm white-light applications. In particular embodiments, the red-emitting phosphor is based on CaAlSiN | 12-09-2010 |
20120074833 | SOLID-STATE LIGHT EMITTING DEVICES WITH PHOTOLUMINESCENCE WAVELENGTH CONVERSION - A light emitting device comprises at least one light emitter, typically an LED, operable to generate blue light and a wavelength conversion component. The wavelength conversion component can be light transmissive or light reflective and comprises at least two phosphor materials that are operable to absorb at least a portion of said blue light and emit light of different colors and wherein the emission product of the device comprises the combined light generated by the LED(s) and the phosphor materials. The phosphor materials are configured as a pattern of non-overlapping areas on a surface of the component. | 03-29-2012 |
20120086034 | SOLID-STATE LIGHT EMITTING DEVICES AND SIGNAGE WITH PHOTOLUMINESCENCE WAVELENGTH CONVERSION - A solid-state light emitting device having a solid-state light emitter (LED) operable to generate excitation light and a wavelength conversion component including a mixture of particles of a photoluminescence material and particles of a light reflective material. In operation the phosphor absorbs at least a portion of the excitation light and emits light of a different color. The emission product of the device comprises the combined light generated by the LED and the phosphor. The wavelength conversion component can be light transmissive and comprise a light transmissive substrate on which the mixture of phosphor and reflective materials is provided as a layer or homogeneously distributed throughout the volume of the substrate. Alternatively the wavelength conversion component can be light reflective with the mixture of phosphor and light reflective materials being provided as a layer on the light reflective surface. | 04-12-2012 |
20120087103 | WAVELENGTH CONVERSION COMPONENT WITH A DIFFUSING LAYER - A light emitting device comprises at least one solid-state light source (LED) operable to generate excitation light and a wavelength conversion component located remotely to the at least one source and operable to convert at least a portion of the excitation light to light of a different wavelength. The wavelength conversion component includes a light transmissive substrate having a wavelength conversion layer comprising particles of at least one photoluminescence material and a light diffusing layer comprising particles of a light diffractive material. This approach of using the light diffusing layer in combination with the wavelength conversion layer solves the problem of variations or non-uniformities in the color of emitted light with emission angle. | 04-12-2012 |
20120087104 | WAVELENGTH CONVERSION COMPONENT WITH SCATTERING PARTICLES - A light emitting device comprises at least one solid-state light source (LED) operable to generate excitation light and a wavelength conversion component located remotely to the at least one source and operable to convert at least a portion of the excitation light to light of a different wavelength. The wavelength conversion component comprises a light transmissive substrate having a wavelength conversion layer comprising particles of at least one photoluminescence material and a light diffusing layer comprising particles of a light diffractive material. This approach of using the light diffusing layer in combination with the wavelength conversion layer solves the problem of variations or non-uniformities in the color of emitted light with emission angle. In addition, the color appearance of the lighting apparatus in its OFF state can be improved by implementing the light diffusing layer in combination with the wavelength conversion layer. Moreover, significant reductions can be achieved in the amount phosphor materials required to implement phosphor-based LED devices. | 04-12-2012 |
20120087105 | WAVELENGTH CONVERSION COMPONENT - A light emitting device comprises at least one solid-state light source (LED) operable to generate excitation light and a wavelength conversion component located remotely to the at least one source and operable to convert at least a portion of the excitation light to light of a different wavelength. The wavelength conversion component comprises a light transmissive substrate having a wavelength conversion layer comprising particles of at least one photoluminescence material and a light diffusing layer comprising particles of a light diffractive material. This approach of using the light diffusing layer in combination with the wavelength conversion layer solves the problem of variations or non-uniformities in the color of emitted light with emission angle. In addition, the color appearance of the lighting apparatus in its OFF state can be improved by implementing the light diffusing layer in combination with the wavelength conversion layer. Moreover, significant reductions can be achieved in the amount phosphor materials required to implement phosphor-based LED devices. | 04-12-2012 |
20120138874 | SOLID-STATE LIGHT EMITTING DEVICES AND SIGNAGE WITH PHOTOLUMINESCENCE WAVELENGTH CONVERSION AND PHOTOLUMINESCENT COMPOSITIONS THEREFOR - A photoluminescent composition (“phosphor ink”) comprises a suspension of particles of at least one blue light (380 nm to 480 nm) excitable phosphor material in a light transmissive liquid binder in which the weight loading of at least one phosphor material to binder material is in a range 40% to 75%. The binder can be U.V. curable, thermally curable, solvent based or a combination thereof and comprise a polymer resin; a monomer resin, an acrylic, a silicone or a fluorinated polymer. The composition can further comprise particles of a light reflective material suspended in the liquid binder. Photoluminescence wavelength conversion components; solid-state light emitting devices; light emitting signage surfaces and light emitting signage utilizing the composition are disclosed. | 06-07-2012 |
20120153311 | LOW-COST SOLID-STATE BASED LIGHT EMITTING DEVICES WITH PHOTOLUMINESCENT WAVELENGTH CONVERSION AND THEIR METHOD OF MANUFACTURE - A method of manufacturing a light emitting device comprises: mounting and electrically connecting a plurality of solid-state light emitters onto a substrate in a known configuration; screen printing a pattern of at least one photo luminescent material onto a surface of a light transmissive carrier such that there is a respective region of photo luminescent material corresponding to a respective one of the light emitters and mounting the carrier to the substrate such that each region of photo luminescent material overlays a respective one of the light emitters. Where the light transmissive carrier comprises a thermo formable material the method can further comprise heating and vacuum molding the carrier such as to form an array of hollow features configured such that a respective feature corresponds to a respective light emitter and is capable of housing a respective light emitter. | 06-21-2012 |
20120201030 | PHOTOLUMINESCENCE COLOR WHEELS - A color wheel comprises: a rotatable disc having a light reflective face and a region of photoluminescence material deposited on the light reflective face. The region of photoluminescence material comprises a substantially uniform thickness layer of a mixture of particles of the photoluminescence material that is deposited on the light reflective face of the disc by screen printing. The photoluminescence materials can comprise blue light or UV excitable photoluminescence materials such as phosphor materials or quantum dots. Color modulated light sources and a method of manufacturing a color wheel are also disclosed. | 08-09-2012 |
20130214676 | SOLID-STATE LAMPS WITH IMPROVED EMISSION EFFICIENCY AND PHOTOLUMINESCENCE WAVELENGTH CONVERSION COMPONENTS THEREFOR - A solid-state lamp comprising: an array of solid-state excitation sources and a photoluminescence wavelength conversion component comprising a layer of photoluminescence material and a coupling optic. The layer of photoluminescence material is remote to the excitation sources and the coupling optic is disposed between the excitation sources and the layer of photoluminescence material. The ratio of the photoluminescence material surface area of the layer of the photoluminescence material to the excitation source surface area for the array of solid-state excitation sources is at least 3 to 1. | 08-22-2013 |
20130234586 | Nitride-Based Red-Emitting Phosphors in RGB (Red-Green-Blue) Lighting Systems - Embodiments of the present invention are directed to nitride-based, red-emitting phosphors in red, green, and blue (RGB) lighting systems, which in turn may be used in backlighting displays and warm white-light applications. In particular embodiments, the red-emitting phosphor is based on CaAlSiN | 09-12-2013 |
20140103373 | SOLID-STATE LIGHT EMITTING DEVICES WITH PHOTOLUMINESCENCE WAVELENGTH CONVERSION - A solid-state light emitting device comprises a light transmissive thermally conductive circuit board; an array of solid-state light emitters (LEDs) mounted on, and electrically connected to, at least one face of the circuit board; and a photoluminescence wavelength conversion component. The wavelength conversion component comprises a mixture of particles of at least one photoluminescence material (phosphor) and particles of a light reflective material. The emission product of the device comprises the combined light generated by the LEDs and the photoluminescence material. The wavelength conversion component can comprise a layer of the phosphor material and particles of a light reflective material applied directly to the array of LEDs in the form of an encapsulant. Alternatively the photoluminescence component is a separate component and remote to the array of LEDs such as tubular component that surrounds the LEDs. | 04-17-2014 |
20140198480 | DIFFUSER COMPONENT HAVING SCATTERING PARTICLES - A diffuser component for a solid-state (LED) light emitting device comprises a light scattering material, wherein the light scattering material has an average particle size that is selected such that the light scattering material will scatter excitation light from a solid-state excitation source relatively more than the light scattering material will scatter light generated by at least one photoluminescence material (phosphor) in a wavelength conversion component. The diffuser component is separately manufactured from the wavelength conversion component. | 07-17-2014 |
20140217427 | SOLID-STATE LIGHT EMITTING DEVICES AND SIGNAGE WITH PHOTOLUMINESCENCE WAVELENGTH CONVERSION - A solid-state light emitting device comprises a solid-state light emitter (LED) operable to generate excitation light and a wavelength conversion component including a mixture of particles of a photoluminescence material and particles of a light reflective material. In operation the phosphor absorbs at least a portion of the excitation light and emits light of a different color. The emission product of the device comprises the combined light generated by the LED and the phosphor. The wavelength conversion component can be light transmissive and comprise a light transmissive substrate on which the mixture of phosphor and reflective materials is provided as a layer or homogeneously distributed throughout the volume of the substrate. Alternatively the wavelength conversion component can be light reflective with the mixture of phosphor and light reflective materials being provided as a layer on the light reflective surface. A wavelength conversion component, light emitting sign and light emitting signage surface are also disclosed. | 08-07-2014 |
20140218940 | WAVELENGTH CONVERSION COMPONENT WITH A DIFFUSING LAYER - A light emitting device comprises at least one solid-state light source (LED) operable to generate excitation light and a wavelength conversion component located remotely to the at least one source and operable to convert at least a portion of the excitation light to light of a different wavelength. The wavelength conversion component comprises a light transmissive substrate having a wavelength conversion layer comprising particles of at least one photoluminescence material and a light diffusing layer comprising particles of a light diffractive material. This approach of using the light diffusing layer in combination with the wavelength conversion layer solves the problem of variations or non-uniformities in the color of emitted light with emission angle. In addition, the color appearance of the lighting apparatus in its OFF state can be improved by implementing the light diffusing layer in combination with the wavelength conversion layer. Moreover, significant reductions can be achieved in the amount phosphor materials required to implement phosphor-based LED devices. | 08-07-2014 |
20150308635 | SOLID-STATE LIGHT EMITTING DEVICES WITH PHOTOLUMINESCENCE WAVELENGTH CONVERSION - A solid-state light emitting device comprises a light transmissive thermally conductive circuit board; an array of solid-state light emitters (LEDs) mounted on, and electrically connected to, at least one face of the circuit board; and a photoluminescence wavelength conversion component. The wavelength conversion component comprises a mixture of particles of at least one photoluminescence material (phosphor) and particles of a light reflective material. The emission product of the device comprises the combined light generated by the LEDs and the photoluminescence material. The wavelength conversion component can comprise a layer of the phosphor material and particles of a light reflective material applied directly to the array of LEDs in the form of an encapsulant. Alternatively the photoluminescence component is a separate component and remote to the array of LEDs such as tubular component that surrounds the LEDs. | 10-29-2015 |
20150315464 | Nitride-Based Red-Emitting Phosphors in RGB (Red-Green-Blue) Lighting Systems - Embodiments of the present invention are directed to nitride-based, red-emitting phosphors in red, green, and blue (RGB) lighting systems, which in turn may be used in backlighting displays and warm white-light applications. In particular embodiments, the red-emitting phosphor is based on CaAlSiN | 11-05-2015 |
20150340573 | MATERIALS FOR PHOTOLUMINESCENCE WAVELENGTH CONVERTED SOLID-STATE LIGHT EMITTING DEVICES AND ARRANGEMENTS - A photoluminescence material paste comprises: a first inorganic photoluminescence material having a first density, a second inorganic photoluminescence material having a second density and a light transmissive non-curable silicone fluid that is not curable by itself. The first density of the first inorganic photoluminescence material is different from the second density of the second inorganic photoluminescence material. The first and second inorganic photoluminescence materials are substantially homogenously distributed within the light transmissive non-curable silicone fluid to form the photoluminescence material paste. A weight loading of the first and second photoluminescence materials in the photoluminescence material paste is in a range of about 60% to about 95%. | 11-26-2015 |
Patent application number | Description | Published |
20080311753 | OXYGEN SACVD TO FORM SACRIFICAL OXIDE LINERS IN SUBSTRATE GAPS - A method of forming and removing a sacrificial oxide layer is described. The method includes forming a step on a substrate, where the step has a top and sidewalls. The method may also include forming the sacrificial oxide layer around the step by chemical vapor deposition of molecular oxygen and TEOS, where the oxide layer is formed on the top and sidewalls of the step. The method may also include removing a top portion of the oxide layer and the step; removing a portion of the substrate exposed by the removal of the step to form a etched substrate; and removing the entire sacrificial oxide layer from the etched substrate. | 12-18-2008 |
20080311754 | LOW TEMPERATURE SACVD PROCESSES FOR PATTERN LOADING APPLICATIONS - A method of improving pattern loading in a deposition of a silicon oxide film is described. The method may include providing a deposition substrate to a deposition chamber, and adjusting a temperature of the deposition substrate to about 250° C. to about 325° C. An ozone containing gas may be introduced to the deposition chamber at a first flow rate of about 1.5 slm to about 3 slm, where the ozone concentration in the gas is about 6% to about 12%, by wt. TEOS may also be introduced to the deposition chamber at a second flow rate of about 2500 mgm to about 4500 mgm. The deposition rate of the silicon oxide film is controlled by a reaction rate of a reaction of the ozone and TEOS at a deposition surface of the substrate. | 12-18-2008 |
20090031953 | CHEMICAL VAPOR DEPOSITION OF HIGH QUALITY FLOW-LIKE SILICON DIOXIDE USING A SILICON CONTAINING PRECURSOR AND ATOMIC OXYGEN - Methods of depositing a silicon oxide layer on a substrate are described. The methods may include the steps of providing a substrate to a deposition chamber, generating an atomic oxygen precursor outside the deposition chamber, and introducing the atomic oxygen precursor into the chamber. The methods may also include introducing a silicon precursor to the deposition chamber, where the silicon precursor and the atomic oxygen precursor are first mixed in the chamber. The silicon precursor and the atomic oxygen precursor react to form the silicon oxide layer on the substrate, and the deposited silicon oxide layer may be annealed. Systems to deposit a silicon oxide layer on a substrate are also described. | 02-05-2009 |
20090031955 | VACUUM CHUCKING HEATER OF AXISYMMETRICAL AND UNIFORM THERMAL PROFILE - Embodiments of a vacuum chuck having an axisymmetrical and/or more uniform thermal profile are provided herein. In some embodiments, a vacuum chuck includes a body having a support surface for supporting a substrate thereupon; a plurality of axisymmetrically arranged grooves formed in the support surface, at least some of the grooves intersecting; and a plurality of chucking holes formed through the body and within the grooves, the chucking holes for fluidly coupling the grooves to a vacuum source during operation, wherein the chucking holes are disposed in non-intersecting portions of the grooves. | 02-05-2009 |
20090104789 | METHOD AND SYSTEM FOR IMPROVING DIELECTRIC FILM QUALITY FOR VOID FREE GAP FILL - A method of forming a silicon oxide layer on a substrate. The method includes providing a substrate and forming a first silicon oxide layer overlying at least a portion of the substrate, the first silicon oxide layer including residual water, hydroxyl groups, and carbon species. The method further includes exposing the first silicon oxide layer to a plurality of silicon-containing species to form a plurality of amorphous silicon components being partially intermixed with the first silicon oxide layer. Additionally, the method includes annealing the first silicon oxide layer partially intermixed with the plurality of amorphous silicon components in an oxidative environment to form a second silicon oxide layer on the substrate. At least a portion of amorphous silicon components are oxidized to become part of the second silicon oxide layer and unreacted residual hydroxyl groups and carbon species in the second silicon oxide layer are substantially removed. | 04-23-2009 |
20100022067 | DEPOSITION METHODS FOR RELEASING STRESS BUILDUP - A deposition method for releasing a stress buildup of a feature over a semiconductor substrate with dielectric material is provided. The feature includes lines separated by a gap. The method includes forming a liner layer over the feature on the semiconductor substrate in a chamber. A stress of the liner layer over the feature is released to substantially reduce bending of the lines of the feature. A dielectric film is deposited over the stress-released liner layer to substantially fill the gap of the feature. | 01-28-2010 |
20110151676 | METHODS OF THIN FILM PROCESS - A method for forming a semiconductor structure includes forming a plurality of features across a surface of a substrate, with at least one space being between two adjacent features. A first dielectric layer is formed on the features and within the at least one space. A portion of the first dielectric layer interacts with a reactant derived from a first precursor and a second precursor to form a first solid product. The first solid product is decomposed to substantially remove the portion of the first dielectric layer. A second dielectric layer is formed to substantially fill the at least one space. | 06-23-2011 |