Patent application number | Description | Published |
20090173930 | MEMORY ELEMENT AND MEMORY DEVICE - A memory device of a resistance variation type, in which data retaining characteristic at the time of writing is improved, is provided. The memory device includes: a plurality of memory elements in which a memory layer is provided between a first electrode and a second electrode so that data is written or erased in accordance with a variation in electrical characteristics of the memory layer; and pulse applying means applying a voltage pulse or a current pulse selectively to the plurality of memory elements. The memory layer includes an ion source layer including an ionic-conduction material and at least one kind of metallic element, and the ion source layer further contains oxygen. | 07-09-2009 |
20100259967 | MEMORY CELL - A memory cell is provided, in which a resistance value is appropriately controlled, thereby a variable resistance element may be applied with a voltage necessary for changing the element into a high or low resistance state. A storage element | 10-14-2010 |
20110031466 | SEMICONDUCTOR MEMORY DEVICE AND A METHOD OF MANUFACTURING THE SAME - Disclosed herein is a semiconductor memory device, including: a first electrode formed on a substrate; an ion source layer formed on an upper layer of the first electrode; and a second electrode formed on an upper layer of the ion source layer. Resistance change type memory cells in each of which either a surface of the first electrode or a surface of the ion source layer is oxidized to form a resistance change type memory layer in an interface between the first electrode and the ion source interface are arranged in a array. | 02-10-2011 |
20110031669 | VIBRATION-DAMPING DEVICE - This vibration-damping device ( | 02-10-2011 |
20110155987 | MEMORY ELEMENT AND MEMORY DEVICE - A memory element capable of simultaneously satisfying the number of repeating operation times and a low-voltage operation characteristic which are in a tradeoff relation is provided. The memory element has a high-resistivity layer and an ion source layer between a bottom electrode and a top electrode. The high-resistivity layer is made of an oxide containing Te. Any of elements other than Te such as Al, Zr, Ta, Hf, Si, Ge, Ni, Co, Cu, and Au may be added. In the case of adding Al to Te and also adding Cu and Zr, the composition ratio of the high-resistivity layer is preferably adjusted in the ranges of 30≦Te≦100 atomic %, 0≦Al≦70 atomic %, and 0≦Cu+Zr≦36 atomic % except for oxygen. The ion source layer is made of at least one kind of metal elements and at least one kind of chalcogen elements of Te, S, and Se. | 06-30-2011 |
20120069631 | MEMORY ELEMENT AND MEMORY DEVICE - A memory device of a resistance variation type, in which data retaining characteristic at the time of writing is improved, is provided. The memory device includes: a plurality of memory elements in which a memory layer is provided between a first electrode and a second electrode so that data is written or erased in accordance with a variation in electrical characteristics of the memory layer; and pulse applying means applying a voltage pulse or a current pulse selectively to the plurality of memory elements. The memory layer includes an ion source layer including an ionic-conduction material and at least one kind of metallic element, and the ion source layer further contains oxygen. | 03-22-2012 |
20120208794 | FUSED HETEROCYCLIC RING DERIVATIVE AND USE THEREOF - The present invention provides a fused heterocycle derivative having a strong Smo inhibitory activity, and use thereof. | 08-16-2012 |
20120214795 | FUSED HETEROCYCLIC RING DERIVATIVE AND USE THEREOF - The present invention provides a fused heterocycle derivative having a strong Smo inhibitory activity, and use thereof. | 08-23-2012 |
20120220569 | FUSED HETEROCYCLIC RING DERIVATIVE AND USE THEREOF - The present invention provides a fused heterocycle derivative having a strong Smo inhibitory activity, and use thereof. | 08-30-2012 |
20120220570 | FUSED HETEROCYCLIC RING DERIVATIVE AND USE THEREOF - The present invention provides a fused heterocycle derivative having a strong Smo inhibitory activity, and use thereof. | 08-30-2012 |
20130256626 | SEMICONDUCTOR MEMORY DEVICE AND A METHOD OF MANUFACTURING THE SAME - Disclosed herein is a semiconductor memory device, including: a first electrode formed on a substrate; an ion source layer formed on an upper layer of the first electrode; and a second electrode formed on an upper layer of the ion source layer. Resistance change type memory cells in each of which either a surface of the first electrode or a surface of the ion source layer is oxidized to form a resistance change type memory layer in an interface between the first electrode and the ion source interface are arranged in a array. | 10-03-2013 |
20140008600 | MEMORY ELEMENT AND MEMORY DEVICE - A memory element capable of simultaneously satisfying the number of repeating operation times and a low-voltage operation characteristic which are in a tradeoff relation is provided. The memory element has a high-resistivity layer and an ion source layer between a bottom electrode and a top electrode. The high-resistivity layer is made of an oxide containing Te. Any of elements other than Te such as Al, Zr, Ta, Hf, Si, Ge, Ni, Co, Cu, and Au may be added. In the case of adding Al to Te and also adding Cu and Zr, the composition ratio of the high-resistivity layer is preferably adjusted in the ranges of 30≦Te≦100 atomic %, 0≦Al ≦70 atomic %, and 0≦Cu+Zr≦36 atomic % except for oxygen. The ion source layer is made of at least one kind of metal elements and at least one kind of chalcogen elements of Te, S, and Se. | 01-09-2014 |
Patent application number | Description | Published |
20090194792 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR - A semiconductor device has an external wiring for GND formed over an underside surface of a wiring substrate. A plurality of via holes connecting to the external wiring for GND are formed to penetrate the wiring substrate. A first semiconductor chip of high power consumption, including HBTs, is mounted over a principal surface of the wiring substrate. The emitter bump electrode of the first semiconductor chip is connected in common with emitter electrodes of a plurality of HBTs formed in the first semiconductor chip. The emitter bump electrode is extended in a direction in which the HBTs line up. The first semiconductor chip is mounted over the wiring substrate so that a plurality of the via holes are connected with the emitter bump electrode. A second semiconductor chip lower in heat dissipation value than the first semiconductor chip is mounted over the first semiconductor chip. | 08-06-2009 |
20100032720 | SEMICONDUCTOR DEVICE AND RADIO COMMUNICATION DEVICE - A technology which allows a reduction in the thermal resistance of a semiconductor device and the miniaturization thereof is provided. The semiconductor device has a plurality of unit transistors Q, transistor formation regions | 02-11-2010 |
20120261799 | SEMICONDUCTOR DEVICE AND RADIO COMMUNICATION DEVICE - A technology which allows a reduction in the thermal resistance of a semiconductor device used in a radio communication device, and the miniaturization thereof is provided. For example, the semiconductor device can include a plurality of unit transistors Q, transistor formation regions | 10-18-2012 |
20140361406 | SEMICONDUCTOR DEVICE AND RADIO COMMUNICATION DEVICE - A radio communication device includes a power amplifier having a semiconductor device formed with a plurality of unit transistors. Base electrodes of the unit transistors are connected with each other by a base line, and an input capacitor is connected to the base line such that the input capacitor is commonly and electrically connected to the base electrodes of a plurality of the unit transistors. | 12-11-2014 |
Patent application number | Description | Published |
20120255895 | WATER PURIFIER - A water purifier that performs back washing extremely effectively even when raw water contains a large amount of impurities includes an attachment main body including an inflow passage into which raw water from an inflow port flows, and first and second outflow passages through which water flows toward outflow ports; and a water purification main body that is attached rotatably to the attachment main body and includes a first flow passage, a second flow passage, and a third flow passage, a first filter member disposed between the first flow passage and the second flow passage and a second filter member disposed between the second flow passage and the third flow passage, wherein, when the attachment main body and the water purification main body are in a rotation position corresponding to a water purification mode, the first flow passage and the second flow passage communicate with the inflow passage and the first outflow passage, respectively, and when the attachment main body and the water purification main body are in a rotation position corresponding to aback washing mode, the third flow passage and the first flow passage communicate with the inflow passage and the second outflow passage, respectively, whereby the first filter member is back washed. | 10-11-2012 |
20140110330 | FILTRATION DEVICE - Provided is a filtration device with a plurality of filters that can be backwashed with purified water with a simple operation. The filtration device | 04-24-2014 |
Patent application number | Description | Published |
20130127560 | HIGH-FREQUENCY SIGNAL TRANSMISSION LINE - Unwanted radiation is reduced in a high-frequency signal transmission line that includes a ground conductor provided with an opening that overlaps a signal line. A dielectric element assembly has a relative dielectric constant ∈ | 05-23-2013 |
20130147581 | HIGH-FREQUENCY SIGNAL TRANSMISSION LINE AND ELECTRONIC APPARATUS - An easily bendable high-frequency signal transmission line includes a dielectric body including a protection layer and dielectric sheets laminated on each other, a surface and an undersurface. A signal line is a linear conductor disposed in the dielectric body. A ground conductor is disposed in the dielectric body, faces the signal line via the dielectric sheet, and continuously extends along the signal line. A ground conductor is disposed in the dielectric body, faces the ground conductor via the signal line sandwiched therebetween, and includes a plurality of openings arranged along the signal line. The surface of the dielectric body on the side of the ground conductor with respect to the signal line is in contact with a battery pack. | 06-13-2013 |
20130300515 | HIGH-FREQUENCY SIGNAL TRANSMISSION LINE AND ELECTRONIC APPARATUS - An easily bendable high-frequency signal transmission line includes a dielectric body including a protection layer and dielectric sheets laminated on each other, a surface and an undersurface. A signal line is a linear conductor disposed in the dielectric body. A ground conductor is disposed in the dielectric body, faces the signal line via the dielectric sheet, and continuously extends along the signal line. A ground conductor is disposed in the dielectric body, faces the ground conductor via the signal line sandwiched therebetween, and includes a plurality of openings arranged along the signal line. The surface of the dielectric body on the side of the ground conductor with respect to the signal line is in contact with a battery pack. | 11-14-2013 |
20130300516 | HIGH-FREQUENCY SIGNAL TRANSMISSION LINE AND ELECTRONIC APPARATUS - An easily bendable high-frequency signal transmission line includes a dielectric body including a protection layer and dielectric sheets laminated on each other, a surface and an undersurface. A signal line is a linear conductor disposed in the dielectric body. A ground conductor is disposed in the dielectric body, faces the signal line via the dielectric sheet, and continuously extends along the signal line. A ground conductor is disposed in the dielectric body, faces the ground conductor via the signal line sandwiched therebetween, and includes a plurality of openings arranged along the signal line. The surface of the dielectric body on the side of the ground conductor with respect to the signal line is in contact with a battery pack. | 11-14-2013 |
20140097916 | HIGH-FREQUENCY SIGNAL TRANSMISSION LINE - Unwanted radiation is reduced in a high-frequency signal transmission line that includes a ground conductor provided with an opening that overlaps a signal line. A dielectric element assembly has a relative dielectric constant ∈ | 04-10-2014 |
20140125426 | HIGH-FREQUENCY SIGNAL TRANSMISSION LINE AND ELECTRONIC APPARATUS - An easily bendable high-frequency signal transmission line includes a dielectric body including a protection layer and dielectric sheets laminated on each other, a surface and an undersurface. A signal line is a linear conductor disposed in the dielectric body. A ground conductor is disposed in the dielectric body, faces the signal line via the dielectric sheet, and continuously extends along the signal line. A ground conductor is disposed in the dielectric body, faces the ground conductor via the signal line sandwiched therebetween, and includes a plurality of openings arranged along the signal line. The surface of the dielectric body on the side of the ground conductor with respect to the signal line is in contact with a battery pack. | 05-08-2014 |
20140125434 | HIGH-FREQUENCY SIGNAL TRANSMISSION LINE AND ELECTRONIC APPARATUS - An easily bendable high-frequency signal transmission line includes a dielectric body including a protection layer and dielectric sheets laminated on each other, a surface and an undersurface. A signal line is a linear conductor disposed in the dielectric body. A ground conductor is disposed in the dielectric body, faces the signal line via the dielectric sheet, and continuously extends along the signal line. A ground conductor is disposed in the dielectric body, faces the ground conductor via the signal line sandwiched therebetween, and includes a plurality of openings arranged along the signal line. The surface of the dielectric body on the side of the ground conductor with respect to the signal line is in contact with a battery pack. | 05-08-2014 |
20140176264 | HIGH-FREQUENCY SIGNAL LINE AND ELECTRONIC DEVICE INCLUDING THE SAME - A high-frequency signal line includes a dielectric element body including regions and a plurality of flexible dielectric sheets. A signal conductive layer is provided in or on the dielectric element body. Ground conductive layers are provided in or on the dielectric element body and face the signal conductive layer. A distance between the ground conductive layer and the signal conductive layer in the region is smaller than a distance between the ground conductive layer and the signal conductive layer in the regions. The dielectric element body is bent in the region. | 06-26-2014 |
20140184359 | HIGH-FREQUENCY SIGNAL TRANSMISSION LINE AND ELECTRONIC DEVICE - A high-frequency signal transmission line includes a flexible body including a plurality of insulating layers. A linear signal line is located in or on the body. A first ground conductor is located opposite to the signal line via at least one of the insulating layers. A second ground conductor extends along the signal line. An interlayer connection portion that connects the first ground conductor and the second ground conductor includes a plurality of interlayer connection conductors individually pierced in some of the insulating layers and connected to each other. The plurality of interlayer connection conductors includes two interlayer connection conductors that are pierced in adjacent ones of the insulating layers with respect to a layer-stacking direction and that have central axes located in different positions when viewed from the layer-stacking direction. | 07-03-2014 |
20150015345 | HIGH-FREQUENCY SIGNAL TRANSMISSION LINE AND ELECTRONIC DEVICE - A dielectric element assembly includes a plurality of dielectric layers stacked on each other in a direction of lamination and extends in an x-axis direction. A signal line is provided in the dielectric element assembly and extends in the x-axis direction. A reference ground conductor is provided on a positive side in a z-axis direction relative to the signal line. An auxiliary ground conductor is provided on a negative side in the z-axis direction relative to the signal line. Via-hole conductors connect the reference ground conductor and the auxiliary ground conductor and are provided in the dielectric element assembly on the negative side relative to the center in a y-axis direction. A portion of the signal line in a section which includes the via-hole conductors is positioned on the positive side in the y-axis direction relative to another portion of the signal line in a section which does not include the via-hole conductors. | 01-15-2015 |
20150054600 | HIGH-FREQUENCY SIGNAL LINE AND ELECTRONIC DEVICE INCLUDING THE SAME - A high-frequency signal line includes a dielectric body including flexible dielectric sheets laminated in a direction of lamination and also including a first line portion, a second line portion extending along the first line portion, and a third line portion connecting ends in a specified direction of the first and second line portions. In the dielectric body, a signal line extends through the first, second and third line portions, and a first ground conductor and a second ground conductor face the signal line from both sides in the direction of lamination. One or more interlayer connection conductors are pierced in the dielectric sheets to connect the first ground conductor and the second ground conductor. None of the interlayer connection conductors is provided in a portion of the third line portion that is farther in a direction opposite to the specified direction than the signal line when viewed from the direction of lamination. | 02-26-2015 |