Patent application number | Description | Published |
20090173621 | METHOD OF MAGNETRON SPUTTERING AND A METHOD FOR DETERMINING A POWER MODULATION COMPENSATION FUNCTION FOR A POWER SUPPLY APPLIED TO A MAGNETRON SPUTTERING SOURCE - A method of magnetron sputtering, comprises rotating a magnet of a magnetron with an angular frequency ω, and, during sputtering of material from a source of the magnetron onto a substrate, periodically modulating a power level applied to the source with at least a component comprising a frequency f which is a harmonic of the angular frequency ω of rotation of the magnet other than the first harmonic. | 07-09-2009 |
20090173622 | REACTIVE SPUTTERING WITH HIPIMS - A method and apparatus for sputter depositing an insulation layer onto a surface of a cavity formed in a substrate and having a high aspect ratio is provided. A target formed at least in part from a material to be included in the insulation layer and the substrate are provided in a substantially enclosed chamber defined by a housing. A plasma is ignited within the substantially enclosed chamber and a magnetic field is provided adjacent to a surface of the target to at least partially contain the plasma adjacent to the surface of the target. A voltage is rapidly increased to repeatedly establish high-power electric pulses between a cathode and an anode. An average power of the electric pulses is at least 0.1 kW, and can optionally be much greater. An operational parameter of the sputter deposition is controlled to promote sputter depositing of the insulation layer in a transition mode between a metallic mode and a reactive mode. | 07-09-2009 |
20090263966 | APPARATUS FOR SPUTTERING AND A METHOD OF FABRICATING A METALLIZATION STRUCTURE - A method of depositing a metallization structure ( | 10-22-2009 |
20110192715 | MAGNETRON SOURCE AND METHOD OF MANUFACTURING - A magnetron source comprises a target ( | 08-11-2011 |
20120279851 | METHOD OF MAGNETRON SPUTTERING AND A METHOD FOR DETERMINING A POWER MODULATION COMPENSATION FUNCTION FOR A POWER SUPPLY APPLIED TO A MAGNETRON SPUTTERING SOURCE - A method of magnetron sputtering, comprises rotating a magnet of a magnetron with an angular frequency ω, and, during sputtering of material from a source of the magnetron onto a substrate, periodically modulating a power level applied to the source with at least a component comprising a frequency f which is a harmonic of the angular frequency ω of rotation of the magnet other than the first harmonic. | 11-08-2012 |
20130248358 | IN-SITU CONDITIONING FOR VACUUM PROCESSING OF POLYMER SUBSTRATES - An etching chamber is equipped with an actively-cooled element preferentially adsorbs volatile compounds that are evolved from a polymeric layer of a wafer during etching, which compounds will act as contaminants if re-deposited on the wafer, for example on exposed metal contact portions where they may interfere with subsequent deposition of metal contact layers. In desirable embodiments, a getter sublimation pump is also provided in the etching chamber as a source of getter material. Methods of etching in such a chamber are also disclosed. | 09-26-2013 |
20140158530 | APPARATUS FOR SPUTTERING AND A METHOD OF FABRICATING A METALLIZATION STRUCTURE - A method of depositing a metallization structure ( | 06-12-2014 |
Patent application number | Description | Published |
20090111216 | APPLICATION OF HIPIMS TO THROUGH SILICON VIA METALLIZATION IN THREE-DIMENSIONAL WAFER PACKAGING - A method of magnetically enhanced sputtering an electrically-conductive material onto interior surfaces of a trench described herein includes providing a magnetic field adjacent to a target formed at least in part from the electrically-conductive material, and applying a DC voltage between an anode and the target as a plurality of pulses. A high-frequency signal is applied to the pedestal supporting the semiconductor substrate to generate a self-bias field adjacent to the semiconductor substrate. The high-frequency signal is applied to the pedestal in pulses, during periods of time that overlap with the periods during which the DC voltage pulses are applied. The periods of time that the high-frequency signals are applied include a duration that extends beyond termination of the DC voltage pulse applied between the anode and the target. During each DC voltage pulse the electrically-conductive material is sputter deposited onto the side walls of the trench formed in the semiconductor substrate. | 04-30-2009 |
20090134011 | Method for producing a directional layer by cathode sputtering, and device for implementing the method - For producing a directional layer for instance with constant nominal directionality, such as a low-retentivity layer with a preferred direction of magnetization or a support layer for such a layer by cathode sputtering on a substrate surface ( | 05-28-2009 |
20090252892 | PROCESSING CHAMBER - A process apparatus for treatment of a substrate comprising a load chamber for loading the substrate, a process chamber for processing the substrate, a sealing plane separating the process chamber from the load chamber and means for vertically moving the substrate from the load chamber to the process chamber, and a method for treating the substrate are provided. The load chamber is located in one of the lower and upper portions of the process apparatus, and the process chamber is located in the other of the lower and upper portions of the process apparatus. The process apparatus and method of the present invention will provide easy maintenance and reduced costs by reducing the number of movements for loading the substrate. | 10-08-2009 |
20100155238 | RF SPUTTERING ARRANGEMENT - Apparatus for sputtering comprises a vacuum chamber, at least one first electrode having a first surface arranged in the vacuum chamber, a counter electrode having a surface arranged in the vacuum chamber and a RF generator. The RF generator is configured to apply a RF electric field across the at least one first electrode and the counter electrode so as to ignite a plasma between the first electrode and the counter electrode. The counter electrode comprises at least two cavities in communication with the vacuum chamber. the cavities each have dimensions such that a plasma can be formed in the cavity. | 06-24-2010 |
20130220802 | RF SUBSTRATE BIAS WITH HIGH POWER IMPULSE MAGNETRON SPUTTERING (HIPIMS) - An apparatus for generating sputtering of a target to produce a coating on a substrate is provided. The apparatus comprises a magnetron including a cathode and an anode. A power supply is operably connected to the magnetron and at least one capacitor is operably connected to the power supply. A first switch is also provided. The first switch operably connects the power supply to the magnetron to charge the magnetron and the first switch is configured to charge the magnetron according to a first pulse. An electrical bias device is operably connected to the substrate and configured to apply a substrate bias. | 08-29-2013 |
20130288477 | APPARATUS AND METHOD FOR DEPOSITING A LAYER ONTO A SUBSTRATE - Apparatus ( | 10-31-2013 |
20140349011 | PROCESSING CHAMBER - A process apparatus for treatment of a substrate comprising a load chamber for loading the substrate, a process chamber for processing the substrate, a sealing plane separating the process chamber from the load chamber and means for vertically moving the substrate from the load chamber to the process chamber, and a method for treating the substrate are provided. The load chamber is located in one of the lower and upper portions of the process apparatus, and the process chamber is located in the other of the lower and upper portions of the process apparatus. The process apparatus and method of the present invention will provide easy maintenance and reduced costs by reducing the number of movements for loading the substrate. | 11-27-2014 |