Patent application number | Description | Published |
20090173444 | SURFACE PROCESSING APPARATUS - The invention is to realize a gas ejection mechanism, which makes it possible to form a uniform gas flow and to control the temperature and its distribution over a gas plate, and thereby to provide a surface processing apparatus which can continuously carry out uniform processing. A surface processing apparatus of this invention comprises: a process chamber in which a substrate holding mechanism and a gas ejection mechanism are arranged to face each other; an exhaust means; and a gas supply means; wherein a gas distribution mechanism, a cooling or the heating mechanism provided with a coolant channel or a heater to cool or heat a gas plate and a number of gas passages, and the gas plate having a number of gas outlets communicated with the gas passages are arranged in that order from the upper stream to construct the gas ejection mechanism, and wherein the gas plate is fixed to the cooling or heating mechanism with a clamping member or with an electrostatic chucking mechanism. A second gas distribution mechanism may be installed between the gas plate and the cooling or heating mechanism so as to form gas outlets under the coolant channel. | 07-09-2009 |
20090197418 | SUBSTRATE PROCESSING APPARATUS - A method of using a heat exchanger efficiently and uniformly to cool or heats portions to be controlled to a prescribed temperature, and then continuously carry out stable processing. The heat exchanger is constructed by arranging partition walls between two plates to form a fluid channel and a fin parallel with the channel or inclined by a prescribed angle on each of the two plates insides the channel so that the plate or a member in contact with the plate is cooled or heated with the fluid flowing through the channel. | 08-06-2009 |
20090283976 | SUBSTRATE HOLDING APPARATUS - A substrate holding apparatus comprises a substrate holding mechanism configured to hold a substrate; a heating mechanism; and a heat-conductive member which is interposed between the substrate holding mechanism and the heating mechanism to be in contact therewith and conducts heat generated by the heating mechanism to the substrate holding mechanism, wherein the heat-conductive member has a recessed section that opens to the substrate. | 11-19-2009 |
20100276275 | METHOD OF GENERATING FINE METAL PARTICLES, METHOD OF MANUFACTURING METAL-CONTAINING PASTE, AND METHOD OF FORMING THIN METAL FILM INTERCONNECTION - There is provided a method or the like which safely generates fine metal particles at a low cost without using a chlorine gas. Fine copper particles ( | 11-04-2010 |
20110121927 | MAGNETIC FIELD GENERATING APPARATUS AND PLASMA PROCESSING APPARATUS - A magnetic field generating apparatus which generates a cusped magnetic field on an electrode includes a magnet mechanism which is attached to the electrode and includes a plurality of magnets held on a holding plate, and a rotation mechanism which rotates the holding plate. The plurality of magnets ( | 05-26-2011 |
20110174221 | Surface processing apparatus - This surface processing apparatus has a reactor in which plasma is generated and a substrate whose surface is to be processed by the plasma is arranged, and a magnet plate for creating a point-cusp magnetic field distributed in an inner space of the reactor, in which the plasma is generated. The magnet plate has a plurality of magnets. These magnets are arranged by a honeycomb lattice structure in a circular plane facing in parallel a surface of the substrate. One magnetic pole end face of each of magnets is arranged at a position of each of the lattice points forming hexagonal shapes on the circular plane. The polarities of the magnetic pole end faces of two adjoining magnets are arranged to become opposite alternately. The magnet plate may be provided with a plurality of magnets arranged by a lattice structure forming a square and the magnetic force (coercive force) of some of the magnets arranged at the outermost region is reduced. Thereby, the periodicity of the point-cusp magnetic field in the inside space is maintained as much as possible even at the peripheral edge and the asymmetry of the distribution of the magnetic field at the region where the periodicity is disturbed at the peripheral edge is reduced. | 07-21-2011 |
20120073960 | MAGNETRON SPUTTERING APPARATUS AND ELECTRONIC COMPONENT MANUFACTURING METHOD - A magnetron sputtering apparatus includes a cathode electrode having a first surface and a second surface opposite to the first surface, a target attachable to the first surface of the cathode electrode, and a magnet unit which is adjacent to the second surface of the cathode electrode and forms a magnetic field on the target surface. The magnet unit includes a plurality of magnet pieces each having a first magnet member which is magnetized in a direction perpendicular to the target and is arranged with a magnetic pole end face oriented toward the target, and a second magnet member which is magnetized opposite to the first magnet member in the direction perpendicular to the target and is arranged in contact with the first magnet member with a magnetic pole end face being oriented toward the target. | 03-29-2012 |
20140138347 | METHOD FOR MANUFACTURING MAGNETORESISTANCE EFFECT ELEMENT - In a method for manufacturing the functional element, a protective film covering an underlayer, a patterned multilayer film, and a patterned cap layer are formed, and the underlayer is then processed without newly forming a resist. Thereby, an electrode can be formed in steps less than ever before. Since the protective film formed on the patterned multilayer film and the patterned cap layer is used as a mask, the problem of the misregistration can be prevented. | 05-22-2014 |
20140206197 | METHOD OF FABRICATING FIN FET AND METHOD OF FABRICATING DEVICE - In fin FET fabrication, side walls of a semiconductor fin formed on a substrate have certain roughness. Using such fins having roughness may induce variations in characteristics between transistors due to their shapes or the like. An object of the present invention is to provide a fin FET fabrication method capable of improving device characteristic by easily reducing the roughness of the side walls of fins after formation. In one embodiment of the present invention, side walls of a semiconductor fin are etched by an ion beam extracted from a grid to reduce the roughness of the side walls. | 07-24-2014 |