Patent application number | Description | Published |
20090172452 | System and Method of Leakage Control in an Asynchronous System - Systems and methods of leakage control in an asynchronous pipeline are disclosed. In an embodiment, a signal is received from a preceding stage at an operative stage of an asynchronous circuit device, and a switch associated with the operative stage is activated in response to the control signal being sent to the operative stage to enable power to the operative stage. | 07-02-2009 |
20090309667 | RING OSCILLATOR USING ANALOG PARALLELISM - An apparatus including a ring oscillator and related methods are disclosed. The ring oscillator includes at least two ring loops. A first ring loop includes a plurality of series coupled delay cells. At least one additional ring loop includes a plurality of series coupled delay cells. The at least one additional ring loop is coupled to the first ring loop by one or more common delay cells shared between the first ring loop and the at least one additional ring loops. | 12-17-2009 |
20100097101 | DISTRIBUTED SUPPLY CURRENT SWITCH CIRCUITS FOR ENABLING INDIVIDUAL POWER DOMAINS - An integrated circuit includes multiple power domains. Supply current switch circuits (SCSCs) are distributed across each power domain. When a signal is present on a control node within a SCSC, the SCSC couples a local supply bus of the power domain to a global supply bus. An enable signal path extends through the SCSCs so that an enable signal can be propagated down a chain of SCSCs from control node to control node, thereby turning the SCSCs on one by one. When the domain is to be powered up, a control circuit asserts an enable signal that propagates down a first chain of SCSCs. After a programmable amount of time, the control circuit asserts a second enable signal that propagates down a second chain. By spreading the turning on of SCSCs over time, large currents that would otherwise be associated with coupling the local and global buses together are avoided. | 04-22-2010 |
20100141322 | Non-Volatile State Retention Latch - Electronic circuits use latches including a magnetic tunnel junction (MTJ) structure and logic circuitry arranged to produce a selective state in the MTJ structure. Because the selective state is maintained magnetically, the state of the latch or electronic circuit can be maintained even while power is removed from the electronic device. | 06-10-2010 |
20100321102 | Leakage Reduction in Electronic Circuits - In one embodiment, an apparatus for reducing leakage in an electronic circuit (e.g., a CMOS circuit) includes a power switch transistor configured to selectively couple or decouple a voltage to a logic portion of the electronic circuit. The power switch transistor receives a first voltage during an active mode of the electronic circuit and receives a second voltage during a sleep mode of the electronic circuit. The power switch transistor has a bulk region that is biased using the first voltage during sleep mode. The power switch transistor has a gate region that is biased using the first voltage during sleep mode. | 12-23-2010 |
20110050334 | Integrated Voltage Regulator with Embedded Passive Device(s) - A semiconductor packaging system has a packaging substrate into which inductors and/or capacitors are partially or completely embedded. An active portion of a voltage regulator is mounted on the packaging substrate and supplies regulated voltage to a die also mounted on the packaging substrate. Alternatively, the active portion of the voltage regulator is integrated into the die the voltage regulator supplies voltage to. The voltage regulator cooperates with the inductors and/or capacitors to supply voltage to the die. The inductors may be through vias in the packaging substrate. For additional inductance, through vias in a printed circuit board on which the packaging substrate is mounted may couple to the through vias in the packaging substrate. | 03-03-2011 |
20110084765 | Three Dimensional Inductor and Transformer - A three dimensional on-chip inductor, transformer and radio frequency amplifier are disclosed. The radio frequency amplifier includes a pair of transformers and a transistor. The transformers include at least two inductively coupled inductors. The inductors include a plurality of segments of a first metal layer, a plurality of segments of a second metal layer, a first inductor input, a second inductor input, and a plurality of through silicon vias coupling the plurality of segments of the first metal layer and the plurality of segments of the second metal layer to form a continuous, non-intersecting path between the first inductor input and the second inductor input. The inductors can have a symmetric or asymmetric geometry. The first metal layer can be a metal layer in the back-end-of-line section of the chip. The second metal layer can be located in the redistributed design layer of the chip. | 04-14-2011 |
20110111705 | System and Method of Silicon Switched Power Delivery Using a Package - In one particular embodiment, an integrated circuit includes a package and a substrate electrically and physically coupled to the package. The package includes a first package-substrate connection, a second package-substrate connection, and metallization coupling the first package-substrate connection to the second package-substrate connection. The substrate is coupled to the package via the first package-substrate connection and the second package-substrate connection. The substrate includes a plurality of power domains and a power control unit. The second package-substrate connection of the package is coupled to a particular power domain of the plurality of power domains. The power control unit includes logic and a switch, where the switch includes a first terminal coupled to a voltage supply terminal, a control terminal coupled to the logic, and a second terminal coupled to the first package-substrate connection of the package. The logic selectively activates the switch to distribute power to the particular power domain via the metallization of the package. | 05-12-2011 |
20110163801 | Methods and Circuits for Optimizing Performance and Power Consumption in a Design and Circuit Employing Lower Threshold Voltage (LVT) Devices - Methods and circuits for optimizing performance and power consumption in a circuit design and circuit employing one or more lower threshold voltage (Lvt) cells or devices are described. A base supply voltage amplitude is determined for providing operating power for the circuit. The base supply voltage amplitude is a low or lowest voltage level that still satisfies a performance specification for the circuit. Providing a low or lowest base supply voltage level reduces or minimizes the standby (i.e., non-switching) power consumption in the Lvt device(s) since current leakage is reduced as the supply voltage level is reduced. Reducing the supply voltage level used to power the Lvt device(s) also reduces active power consumption for the circuit as well. Thus, total power consumption is optimized or reduced while still receiving the benefit of using Lvt devices to optimize or increase performance of a circuit layout and circuit. | 07-07-2011 |
20110215863 | Integrated Voltage Regulator with Embedded Passive Device(s) - A method of supplying voltage to a die mounted on a packaging substrate includes mounting an active portion of a voltage regulator on the packaging substrate. The method also includes coupling the active portion of the voltage regulator to at least one passive component at least partially embedded in the packaging substrate and coupling the die to the at least one passive component. Mounting the active portion of the voltage regulator includes mounting the die on the packaging substrate where the die includes the active portion of the voltage regulator. | 09-08-2011 |
20110234300 | Low Voltage Temperature Sensor and use Thereof for Autonomous Multiprobe Measurement Device - A bandgap sensor which measures temperatures within an integrated circuit is presented. The sensor may include a first transistor having an emitter node coupled in series to a first resistor and a first current source, wherein a PTAT current flows through the first resistor, and a second transistor having a base node coupled to a base node of the first transistor, and a collector node coupled to a collector node of the first transistor, further wherein the first and second transistors are diode connected. The sensor may further include a first operational amplifier providing negative feedback to the first current source, wherein the negative feedback is related to a difference in the base-emitter voltages of the first and second transistors, and a second operational amplifier which couples the base-emitter voltage of the second transistor across a second resistor, wherein a CTAT current flows through the second resistor. | 09-29-2011 |
20110267017 | On-Chip Low Voltage Capacitor-Less Low Dropout Regulator with Q-Control - Systems and method for a capacitor-less Low Dropout (LDO) voltage regulator. An error amplifier is configured to amplify a differential between a reference voltage and a regulated LDO voltage. Without including an external capacitor in the LDO voltage regulator, a Miller amplifier is coupled to an output of the error amplifier, wherein the Miller amplifier is configured to amplify a Miller capacitance formed at an input node of the Miller amplifier. A capacitor coupled to the output of the error amplifier creates a positive feedback loop for decreasing a quality factor (Q), such that system stability is improved. | 11-03-2011 |
20120056680 | Three Dimensional Inductor, Transformer and Radio Frequency Amplifier - A three dimensional on-chip radio frequency amplifier is disclosed that includes first and second transformers and a first transistor. The first transformer includes first and second inductively coupled inductors. The second transformer includes third and fourth inductively coupled inductors. Each inductor includes multiple first segments in a first metal layer; multiple second segments in a second metal layer; first and second inputs, and multiple through vias coupling the first and second segments to form a continuous path between the first and second inputs. The first input of the first inductor is coupled to an amplifier input; the first input of the second inductor is coupled to the first transistor gate; the first input of the third inductor is coupled to the first transistor drain, the first input of the fourth inductor is coupled to an amplifier output. The second inductor inputs and the first transistor source are coupled to ground. | 03-08-2012 |
20130083825 | LOW VOLTAGE TEMPERATURE SENSOR AND USE THEREOF FOR AUTONOMOUS MULTIPROBE MEASUREMENT DEVICE - A bandgap sensor which measures temperatures within an integrated circuit is presented. The sensor may include a first transistor having an emitter node coupled series to a first resistor and a first current source, wherein a PTAT current flows through the first resistor, and a second transistor having a base node coupled to a base node of the first transistor, and a collector node coupled to a collector node of the first transistor, further wherein the first and second transistors are diode connected. The sensor may further include a first operational amplifier providing negative feedback to the first current source, wherein the negative feedback is related to a difference in the base-emitter voltages of the first and second transistors, and a second operational amplifier which couples the base-emitter voltage of the second transistor across a second resistor, wherein a CTAT current flows through the second resistor. | 04-04-2013 |
20140022002 | THERMAL MANAGEMENT OF TIGHTLY INTEGRATED SEMICONDUCTOR DEVICE, SYSTEM AND/OR PACKAGE - Some implementations provide a semiconductor package that includes a first die and a second die adjacent to the first die. The second die is capable of heating the first die. The semiconductor package also includes a leakage sensor configured to measure a leakage current of the first die. The semiconductor package also includes a thermal management unit coupled to the leakage sensor. The thermal management unit configured to control a temperature of the first die based, on the leakage current of the first die. | 01-23-2014 |