Goya, JP
Hiroyuki Goya, Kawanishi City JP
Patent application number | Description | Published |
---|---|---|
20090170564 | ORGANIC ELECTRO LUMINESCENSE DISPLAY APPARATUS AND APPLICATION THEREOF - A technology for reducing the so-called “phosphor burn-in” phenomenon where the variation of luminance arises by reducing display luminance of a certain pixel caused by deterioration in a display apparatus constituted by an organic electro luminescence element is provided. In the display apparatus, when displaying an image acquired by an image acquiring unit, luminance substantially same as average luminance of the acquired image is set to a non-display area where the image is not displayed. | 07-02-2009 |
20120212500 | ORGANIC ELECTRO LUMINESCENSE DISPLAY APPARATUS AND APPLICATION THEREOF - A technology for reducing the so-called “phosphor burn-in” phenomenon where the variation of luminance arises by reducing display luminance of a certain pixel caused by deterioration in a display apparatus constituted by an organic electro luminescence element is provided. In the display apparatus, when displaying an image acquired by an image acquiring unit, luminance substantially same as average luminance of the acquired image is set to a non-display area where the image is not displayed. | 08-23-2012 |
20130293597 | ORGANIC ELECTRO LUMINESCENSE DISPLAY APPARATUS AND APPLICATION THEREOF - A technology for reducing the so-called “phosphor burn-in” phenomenon where the variation of luminance arises by reducing display luminance of a certain pixel caused by deterioration in a display apparatus constituted by an organic electro luminescence element is provided. In the display apparatus, when displaying an image acquired by an image acquiring unit, luminance substantially same as average luminance of the acquired image is set to a non-display area where the image is not displayed. | 11-07-2013 |
Saneyuki Goya, Kanagawa JP
Patent application number | Description | Published |
---|---|---|
20090183775 | Method of Setting Conditions For Film Deposition, Photovoltaic Device, and Production Process, Production Apparatus and Test Method for Same - A photovoltaic device having a high conversion efficiency is produced in a stable manner. The conditions for film deposition of a microcrystalline silicon photovoltaic layer ( | 07-23-2009 |
20100116331 | PHOTOVOLTAIC DEVICE AND PROCESS FOR PRODUCING SAME - A photovoltaic device and a process for producing the device that enables a higher level of performance to be achieved at low cost. The photovoltaic device includes at least two laminated photovoltaic layers, and an intermediate layer that is disposed between the two photovoltaic layers and connects the two photovoltaic layers electrically and optically, wherein the surface of the intermediate layer has a plasma-resistant protective layer. | 05-13-2010 |
20100163100 | Photovoltaic Device and Process for Producing Same - A photovoltaic device with improved cell properties having a photovoltaic layer comprising microcrystalline silicon-germanium, and a process for producing the device. A buffer layer comprising microcrystalline silicon or microcrystalline silicon-germanium, and having a specific Raman peak ratio is provided between a substrate-side impurity-doped layer and an i-layer comprising microcrystalline silicon-germanium. | 07-01-2010 |
20100170565 | PHOTOVOLTAIC DEVICE AND METHOD FOR PRODUCING THE SAME - A photovoltaic device having improved conversion efficiency as a result of an increase in the open-circuit voltage is provided. The photovoltaic device comprises a photovoltaic layer having a stacked p-layer, i-layer and n-layer, wherein the p-layer is a nitrogen-containing layer comprising nitrogen atoms at an atomic concentration of not less than 1% and not more than 25%, and the crystallization ratio of the p-layer is not less than 0 but less than 3. Alternatively, the n-layer may be a nitrogen-containing layer comprising nitrogen atoms at an atomic concentration of not less than 1% and not more than 20%, wherein the crystallization ratio of the n-layer is not less than 0 but less than 3. Alternatively, an interface layer may be formed at the interface between the p-layer and the i-layer, wherein the interface layer is a nitrogen-containing layer comprising nitrogen atoms at an atomic concentration of not less than 1% and not more than 30%. Alternatively, an interface layer may be formed at the interface between the n-layer and the i-layer, wherein the interface layer is a nitrogen-containing layer comprising nitrogen atoms at an atomic concentration of not less than 1% and not more than 20%. | 07-08-2010 |
20100206373 | PHOTOVOLTAIC DEVICE - A large surface area photovoltaic device having high conversion efficiency and excellent mass productivity is provided. A photovoltaic device | 08-19-2010 |
20110100444 | PHOTOVOLTAIC DEVICE AND PROCESS FOR PRODUCING PHOTOVOLTAIC DEVICE - A photovoltaic device that exhibits increased open-circuit voltage and an improved fill factor due to an improvement in the contact properties between the n-layer and a back-side transparent electrode layer or intermediate contact layer, and a process for producing the photovoltaic device. The photovoltaic device comprises a photovoltaic layer having a p-layer, an i-layer and an n-layer stacked on top of a substrate, wherein the n-layer comprises a nitrogen-containing n-layer and an interface treatment layer formed on the opposite surface of the nitrogen-containing n-layer to the substrate, the nitrogen-containing n-layer comprises nitrogen atoms at an atomic concentration of not less than 1% and not more than 20%, and has a crystallization ratio of not less than 0 but less than 3, and the interface treatment layer has a crystallization ratio of not less than 1 and not more than 6. | 05-05-2011 |
20110126903 | PHOTOVOLTAIC DEVICE - A photovoltaic device in which, by optimizing the structures for a substrate-side transparent electrode layer, an intermediate layer, and a back electrode layer, the extracted electrical current can be increased. The photovoltaic device includes at least a transparent electrode layer, a photovoltaic layer and a back electrode layer provided on a substrate, wherein the surface of the transparent electrode layer on which the photovoltaic layer is disposed includes a textured structure composed of ridges and a fine micro-texture provided on the surface of the ridges, the pitch of the textured structure is not less than 1.2 μm and not more than 1.6 μm, the height of the ridges is not less than 0.2 μm and not more than 0.8 μm, the pitch between peaks in the fine micro-texture is not less than 0.05 μm and not more than 0.14 μm, and the height of peaks is not less than 0.02 μm and not more than 0.1 μm. | 06-02-2011 |
20110303289 | PROCESS FOR PRODUCING PHOTOVOLTAIC DEVICE AND PHOTOVOLTAIC DEVICE - A process for producing a photovoltaic device that suppresses variations in the photovoltaic conversion efficiency within the plane of a large surface area substrate, suppresses fluctuations in the module power output between production lots, and enables an improvement in the productivity. A process for producing a photovoltaic device that includes forming a silicon-based photovoltaic layer on a substrate using a plasma enhanced CVD method that employs a gas containing a silane-based gas and hydrogen gas as the raw material gas, under conditions in which the flow rate of the hydrogen gas per unit surface area of the substrate is not less than 80 slm/m | 12-15-2011 |
20120012168 | PHOTOVOLTAIC DEVICE - A film thickness configuration for a triple-junction photovoltaic device that is suitable for obtaining high conversion efficiency. The photovoltaic device comprises, on top of a substrate, a transparent electrode layer, a photovoltaic layer containing three stacked cell layers having pin junctions, and a back electrode layer, wherein an incident section cell layer provided on the light-incident side has an amorphous silicon i-layer having a thickness of not less than 100 nm and not more than 200 nm, a bottom section cell layer provided on the opposite side from the light-incident side has a crystalline silicon-germanium i-layer having a thickness of not less than 700 nm and not more than 1,600 nm, and the ratio of germanium atoms relative to the sum of germanium atoms and silicon atoms within the crystalline silicon-germanium i-layer is not less than 15 atomic % and not more than 25 atomic %, and a middle section cell layer provided between the incident section cell layer and the bottom section cell layer has a crystalline silicon i-layer having a thickness of not less than 1,000 nm and not more than 2,000 nm. | 01-19-2012 |
Saneyuki Goya, Yokohama-Shi JP
Patent application number | Description | Published |
---|---|---|
20090095425 | APPARATUS FOR THE FORMATION OF A METAL FILM - An apparatus for forming a metal film, including a reaction vessel for housing a substrate, a precursor feeding device for bubbling a carrier gas through a liquid organometallic complex, vaporizing the organometallic complex, producing a precursor from the vaporized organometallic complex, and feeding the precursor into the reaction vessel, a rotating magnetic field generator for creating a rotating magnetic field in a space above the substrate, and a second plasma generator for generating a plasma from a reducing gas fed into the reaction vessel. | 04-16-2009 |
Saneyuki Goya, Tokyo JP
Patent application number | Description | Published |
---|---|---|
20120135561 | PHOTOELECTRIC-CONVERSION-DEVICE FABRICATION METHOD - An object is to obtain a high-efficiency photoelectric conversion device having a crystalline silicon i-layer in a photoelectric conversion layer. Disclosed is a fabrication method for a photoelectric conversion device that includes a step of forming, on a substrate, a photoelectric conversion layer having an i-layer formed mainly of crystalline silicon. The method includes the steps of determining an upper limit of an impurity concentration in the i-layer according to the Raman ratio of the i-layer; and forming the i-layer so as to have a value equal to or less than the determined upper limit of the impurity concentration. Alternatively, an upper limit of impurity-gas concentration in a film-formation atmosphere is determined according to the Raman ratio of the i-layer, and the i-layer is formed while controlling the impurity-gas concentration so as to have a value equal to or less than the determined upper limit. | 05-31-2012 |
20150014889 | MACHINING DEVICE, MACHINING UNIT, AND MACHINING METHOD - Provided are a machining device ( | 01-15-2015 |
Tami Goya, Kyoto JP
Patent application number | Description | Published |
---|---|---|
20150124105 | PHOTO DECORATION DEVICE - A shooting processing section shoots a user as an object, and an editing processing section allows the user to edit a shot image obtained by shooting. An input receiving section receives, a plurality of times, selection of manipulation processing to be applied to the entire shot image, and a manipulation processing section generates, when the selection of manipulation processing has been received this time, an image after manipulation processing that is the entire shot image to which the manipulation processing received this time is applied over the manipulation processing, selection of which has been received previous time. The present invention can be applied to a photo sticker creating device, for example. | 05-07-2015 |
Toshiharu Goya, Nogata-Shi, Fukuoka JP
Patent application number | Description | Published |
---|---|---|
20130172144 | PLANETARY GEAR TRAIN WITH OILING SYSTEM FOR SUPPLYING LUBRICANT OIL TO BEARING OF PLANETARY GEAR AND WIND TURBINE GENERATOR INCORPORATING THE SAME - A planetary gear train is provided with: a planetary gear; a planetary pin for supporting the planetary gear; a carrier for supporting the planetary pin; and a housing for accommodating at least a portion of the carrier, the planetary gear and the planetary pin. The planetary gear is rotatable with respect to the planetary pin by a bearing. An oiling flow path for supplying lubricant oil to the bearing is formed inside the carrier. The carrier receives the lubricant oil into the oiling flow path from an oiling member stationarily fixed to the housing. The inlet for receiving the lubricant oil into the oiling flow path of the carrier from the oiling member is positioned inside the housing. | 07-04-2013 |
Toshiharu Goya, Nogata-Shi JP
Patent application number | Description | Published |
---|---|---|
20130217535 | PLANETARY GEAR TRAIN WITH THRUST COLLAR USED AS THRUST BEARING OF PLANETARY GEAR AND WIND TURBINE GENERATOR INCORPORATING THE SAME - A planetary gear train is provided with: a carrier; a planetary gear; a planetary pin inserted into an insert hole provided through the planetary gear and coupled to the carrier to rotatably support the planetary gear; a thrust collar attached to a surface opposed to the planetary gear of the carrier so as to surround the planetary pin; and a pin for coupling the thrust collar to the carrier. The thrust collar has a first surface opposed to the carrier and a second surface opposed to the planetary gear, and has a first pin hole provided on the first surface so as not to reach the second surface. The carrier has a second pin hole on a surface opposed to the planetary gear. The thrust collar is attached to the carrier by inserting the pin into the first pin hole of the thrust collar and into the second pin hole of the carrier. | 08-22-2013 |
Tsuyoshi Goya, Suita-Shi JP
Patent application number | Description | Published |
---|---|---|
20110046372 | NOVEL BORON COMPOUNDS, THEIR PRODUCTION PROCESSES, AND FUNCTIONAL ELECTRONIC DEVICES USING SAME - The present invention provides novel boron compounds which are useful, depending on their characteristics, as light-emitting materials, electron-transport materials, electron-injection materials, hole-blocking materials, or organic semiconductor materials, and which have new molecular structures quite different from those of the heretofore known boron compounds; their production processes; and functional electronic devices using the same. The novel boron compounds are, for example, those of the following formula (1): | 02-24-2011 |
Yoichiro Goya, Susono-Shi JP
Patent application number | Description | Published |
---|---|---|
20100199636 | EXHAUST PURIFYING APPARATUS FOR AN INTERNAL COMBUSTION ENGINE - A present exhaust purifying apparatus comprises a SCR catalyst, a urea-water injector, and a downstream air-fuel ratio sensor (an oxygen concentration sensor having a diffusion resistance layer) disposed at a position downstream of the SCR catalyst. The present apparatus, when a predetermined condition is satisfied, stops injecting the urea-water from the urea-water injector, and obtains an output value of the downstream air-fuel ratio sensor, as a first output value, in that state. The present apparatus obtains an output value of the downstream air-fuel ratio sensor when the urea-water is being injected from the urea-water injector, as a second output value. The present apparatus obtains a concentration of ammonia which flows out from the SCR catalyst based on the difference between the first output value and the second output value. | 08-12-2010 |
Yoichiro Goya, Shizuoka-Ken JP
Patent application number | Description | Published |
---|---|---|
20100000290 | GAS SENSOR MOUNTING STRUCTURE - A gas sensor mounting structure ( | 01-07-2010 |
20100064663 | GAS SENSOR FITTING STRUCTURE - A gas sensor is fitted to an exhaust pipe such that an end face in which a vent-hole is formed is not visible from any position of inlet portions of the exhaust pipe. Thus, it is possible to suppress entry of condensed water through the vent hole formed in the end face of the gas sensor. As a result, it is possible to minimize occurrence of a crack in the gas sensor. | 03-18-2010 |
20110246090 | GAS SENSOR CONTROL DEVICE - For an A/F sensor | 10-06-2011 |