Patent application number | Description | Published |
20100253709 | CORRECTION VALUE ACQUISITION METHOD, CORRECTION METHOD AND IMAGE DISPLAY APPARATUS - A first step drives a plurality of electron-emitting devices with a drive signal corresponding to a first gradation level and measures the luminance dispersion. A second step selects one or more electron-emitting devices as target devices, drives them with a drive signal corresponding to each gradation level, and measures their luminance for each gradation level. A third step drives the target devices with a drive signal having a voltage amplitude of a drive signal corresponding to each gradation level multiplied by a constant, and measures their luminance for each gradation level. Then, a correction value for each gradation level of each electron-emitting device is calculated using a luminance ratio of the luminance measured in the second step to the luminance measured in the third step, and the luminance dispersion measured in the first step. | 10-07-2010 |
20110187734 | IMAGE DISPLAY APPARATUS AND CONTROL METHOD FOR IMAGE DISPLAY APPARATUS - An image display apparatus includes: a display panel; a first storage unit that stores correction data; a second storage unit; a transfer unit that transfers the correction data from the first storage unit to the second storage unit; a correction unit that implements the correction processing on an input video signal while referencing the second storage unit; and a control unit, wherein the control unit performs control such that when a part of the correction data has been stored in the second storage unit, interim correction processing using the part of the correction data is started and video display is begun, and after a remainder of the correction data has been stored in the second storage unit, the correction processing performed is switched to correction processing using all of the correction data. | 08-04-2011 |
20110199398 | IMAGE DISPLAY APPARATUS AND METHOD FOR CONTROLLING IMAGE DISPLAY APPARATUS - An image display apparatus of the present invention includes: a display panel; a storage unit that stores a plurality of correction values which are used for correction processing for decreasing brightness variation; a correction unit; and a control unit, wherein the control unit divides the display panel into a plurality of sub-areas, calculates, for each sub-area, a select block gradation value, and executes, for each sub-area, a control to read correction values, which are used for calculating a correction value corresponding to the select block gradation value, out of the plurality of correction values, using the correction unit, and the correction unit calculates, for each sub-area, a correction value corresponding to the select block gradation value using the read correction values, and converts gradation values of video signals in the sub-area using the calculated correction value. | 08-18-2011 |
Patent application number | Description | Published |
20130087193 | SOLAR CELL UNIT - A solar cell unit ( | 04-11-2013 |
20130220416 | SOLAR CELL MODULE AND SOLAR GENERATOR - A solar cell module according to the invention includes a solar cell; a light guiding portion including a first fluorescent substance having a faint color and that emits light having low luminosity factor, the light guiding portion absorbing part of light incident from the outside using the first fluorescent substance and transmitting a first light beam emitted from the first fluorescent substance toward the solar cell; and a converter disposed between the light guiding portion and the solar cell, the converter converting the first light beam incident from the light guiding portion into a second light beam to which the solar cell has higher spectral sensitivity than to the first light beam and causing the second light beam to be incident on the solar cell. Thus, when the solar cell module is used as a window, the solar cell module is highly transparent and highly efficiently generates power. | 08-29-2013 |
20130240037 | SOLAR CELL MODULE AND SOLAR GENERATOR - A solar cell module according to an aspect of the present invention includes a light guide module including a first light guide and a second light guide that are disposed so as to face each other and a low-refractive-index layer that is disposed between the first light guide and the second light guide; and a solar cell that receives light emitted from the light guide module. A second main surface of the first light guide includes a first reflecting surface that reflects the first light beam and changes a propagation direction of the first light beam, which has entered through the first main surface of the first light guide. A second main surface of the second light guide includes a second reflecting surface that reflects the second light beam and changes a propagation direction of the second light beam, which has entered through the first main surface of the first light guide, has passed through the first light guide | 09-19-2013 |
20140026962 | SOLAR CELL MODULE AND SOLAR POWER GENERATION APPARATUS - A solar cell module includes a light guide body that guides incident light to propagate therein, and a solar cell element that receives the light propagating within the light guide body, wherein the light guide body is made of a light-transmissive base material and has a curved surface in at least a part thereof. | 01-30-2014 |
20140318601 | LIGHT GUIDE BODY, SOLAR CELL MODULE, AND SOLAR PHOTOVOLTAIC POWER GENERATION DEVICE - A light guide body includes a light-entering surface which outside light enters, one or more outside light-absorbing optical functional materials that absorb part of the outside light which enters the light-entering surface, a light-guiding optical functional material that is excited by energy of light absorbed by the one or more outside light-absorbing optical functional materials and that emits light different from the light, and a light-emitting surface whose area is smaller than the light-entering surface and from which the light emitted from the light-guiding optical functional material is emitted. A mixing ratio of the light-guiding optical functional material is smaller than a mixing ratio of at least an optical functional material having a largest mixing ratio among the one or more outside light-absorbing optical functional materials. | 10-30-2014 |
20140318621 | SOLAR CELL MODULE AND PHOTOVOLTAIC POWER GENERATION DEVICE - A solar cell module includes a light guide and a solar cell element. The light guide has a light incident surface and a light exit surface having an area smaller than the light incident surface and contains a plurality of optical functional materials. In the light guide, part of external light incident on the light incident surface is absorbed by the plurality of optical functional materials, Foerster energy transfer occurs among the plurality of optical functional materials, and light emitted by the optical functional material having the longest peak wavelength of the emission spectrum among the plurality of optical functional materials is collected to and exits from the light exit surface. The solar cell element receives light exiting from the light exit surface of the light guide. The spectral sensitivity of the solar cell element at the peak wavelength of the emission spectrum of the optical functional material having the longest peak wavelength of the emission spectrum among the plurality of optical functional materials is higher than the spectral sensitivity of the solar cell element at peak wavelengths of the emission spectrums of the other optical functional materials contained in the light guide. | 10-30-2014 |
20150034158 | SOLAR CELL MODULE AND PHOTOVOLTAIC POWER GENERATION DEVICE - A solar cell module capable of suppressing a decrease of a light gathering function with use and offering an excellent light gathering function over a long period of time, and a photovoltaic power generation device using the solar cell module are provided. | 02-05-2015 |
20150160507 | LIQUID CRYSTAL DISPLAY DEVICE - Provided is a liquid crystal display device in which grayscale inversion when viewing a liquid crystal panel in an oblique direction is suppressed, thereby being excellent in viewing angle characteristics. The liquid crystal display device includes a liquid crystal panel that includes a pair of substrates, a liquid crystal layer disposed between the pair of substrates, and a pair of polarization plates respectively arranged in the liquid crystal layer on a light incident side and a light emission side, an illumination device that is arranged on the light incident side of the liquid crystal panel and emits light toward the liquid crystal panel, and a light diffusion member that is arranged on the light emission side of the liquid crystal panel and causes light emitted from the liquid crystal panel to be diffused in an azimuthal direction viewed from a normal direction of the liquid crystal panel. When the total width of a polar angle when luminance is reduced to ⅓ of the maximum luminance in characteristics of polar angle luminance of the illumination device is referred to as a ⅓-total width, the ⅓-total width of the illumination device is equal to or greater than 60° in the azimuthal direction in which variations in luminance of the illumination device in a polar angle direction are the greatest. | 06-11-2015 |
20150162474 | SOLAR CELL MODULE AND SOLAR POWER GENERATION DEVICE - A solar cell module includes a light collector, a solar cell element, and a frame. The light collector includes a main surface and an end surface, allows the external light to be incident from the main surface and allows the light propagating through the inside to be emitted from the end surface. The solar cell element is provided so as to face the end surface and receives the light emitted from the end surface to perform photoelectric conversion. The frame holds a peripheral edge portion of the light collector. The light collector includes a through hole which is provided in the inside in relation to the frame when seen from the main surface side and penetrates the light collector in a thickness direction or a notched s portion which is provided in the inside in relation to the frame when seen from the main surface side and extends from the main surface to a rear surface in the peripheral edge portion. | 06-11-2015 |
20150285963 | LIGHT-DIFFUSING MEMBER HAVING POLARIZING PLATE, PRODUCTION METHOD FOR LIGHT-DIFFUSING MEMBER HAVING POLARIZING PLATE, AND DISPLAY DEVICE - Provided is a display device including a light-diffusing member that includes a substrate, a plurality of light-shielding layers, and a light-diffusing section, and a polarizing plate. The light-diffusing member is configured to diffuse light, which is incident from a polarizing plate side, in an anisotropic manner, the light-diffusing section has a light-emitting end surface that is in contact with the substrate, a light-incident end surface that is opposite to the light-emitting end surface and has an area larger than an area of the light-emitting end surface, and a reflective surface that is in contact with the light-emitting end surface and the light-incident end surface and reflects light incident from the light-incident end surface, a height of the light-diffusing section from the light-incident end surface to the light-emitting end surface is set to be larger than a layer thickness of the light-shielding layers, and an azimuth angle direction in which diffusibility of the light-diffusing member is relatively strong, and a transmission axis of the polarizing plate are approximately parallel with each other. | 10-08-2015 |
20150286101 | LIQUID CRYSTAL DISPLAY DEVICE - A liquid crystal display device includes: a liquid crystal panel that includes a first substrate having a first vertical alignment film, a second substrate having a second vertical alignment film, a liquid crystal layer having a negative dielectric anisotropy, a first polarizing plate, and a second polarizing plate; an illuminating device; and a light control member that is disposed on a light emission side of the liquid crystal panel. The light control member diffuses light that is emitted from the liquid crystal panel in an anisotropic manner in an azimuth angle direction viewed from a normal direction of the liquid crystal panel to control an emission direction of the light. A pixel, which is included in the liquid crystal panel, includes a first region in which a director of liquid crystal molecules at the central portion in a thickness direction of the liquid crystal layer during application of a voltage heads for a first orientation in a first direction, and a second region in which the director of the liquid crystal molecules at the central portion in the thickness direction of the liquid crystal layer during application of a voltage heads for a second orientation opposite to the first orientation in the first direction. An azimuth angle direction in which light-diffusibility of the light control member is relatively strong, and the first direction approximately match each other. | 10-08-2015 |
20150301398 | LIGHT CONTROL FILM AND DISPLAY DEVICE - The light control film includes a base material with transparency and a light control layer that is provided on a side of a surface which faces a display surface of a display panel in the base material, has a light shielding portion which is formed on one surface of the base material, and controls an emission direction of light by diffusing light which is emitted from the display surface, in which the light control layer includes a light emission end surface that contacts with the base material, a light incident end surface that faces the light emission end surface and has a larger area than an area of the light emission end surface, and a reflection surface that contacts with the light emission end surface and the light incident end surface and reflects light which is incident from the light incident end surface, a height from the light incident end surface to the light emission end surface is larger than a layer thickness of the light shielding portion, and the reflection surface reflects light to allocate light at a polar angle with a relatively high light flux amount among directions along prescribed azimuth angles in the display surface to light at a polar angle with relatively low luminance among directions along prescribed azimuth angles. | 10-22-2015 |
20150331276 | LIQUID CRYSTAL DISPLAY DEVICE - Provided is a liquid crystal device including: a liquid crystal panel including a first substrate having a first vertical alignment film, a second substrate having a second vertical alignment film, a liquid crystal layer which is interposed between the first vertical alignment film and the second vertical alignment film and has a negative dielectric anisotropy, a first polarizing plate that is disposed on a light-incident side of the liquid crystal layer, and a second polarizing plate that is disposed on a light-emitting side of the liquid crystal layer; an illuminating device which is disposed on a light-incident side of the liquid crystal panel, and emits light toward the liquid crystal panel; and a light control member which is disposed on a light-emitting side of the liquid crystal panel, and diffuses light that is emitted from the liquid crystal panel in an azimuth angle direction and a polar angle direction viewed from a normal direction of the liquid crystal panel to control an emission direction of the light. The liquid crystal panel includes a plurality of pixels, each being a basic unit of display, and each of the pixels has a plurality of regions in which a director direction or an alignment of liquid crystal molecules at a central portion of the liquid crystal layer in a thickness direction during application of a voltage is different. | 11-19-2015 |
Patent application number | Description | Published |
20140041509 | TUNING DEVICE - A tuning device that facilitates the checking of the pitch of each sound is provided. The tuning device includes a pitch name display means including display positions that are arranged in a pitch order respectively corresponding to pitch names constituting an octave. A reference display position is lighted solely when the pitch of an input sound is in an in-tune state, namely, a difference between the reference pitch and the pitch of the input sound is in a range of ±α (α>0). When the pitch of the input sound is outside a predetermined range, the reference display position and an adjacent display position are both lighted in a way that the reference display position gradually becomes darker while the adjacent display position gradually becomes brighter as an absolute value of the difference (deviation degree of the input pitch relative to the reference pitch) increases. | 02-13-2014 |
20140041510 | TUNING DEVICE - A tuning device is provided. The sound to be tuned is inputted by an input means while a reference sound is produced by an output means. At least two pitches are detected independently from a mixture of the sound to be tuned and the reference sound by a pitch detection means. Based on pitch information of the reference sound acquired by an acquiring means, the pitch of the sound to be tuned is extracted by a pitch extraction means from the at least two pitches detected by the pitch detection means. Information about the pitch of the sound to be tuned is displayed by a display means under control of a display control means. Therefore, the user can easily perform tuning on the sound to be tuned, based on the pitch information displayed by the display means, while listening to the reference sound and producing the sound to be tuned. | 02-13-2014 |
20140137720 | TUNING DEVICE - A tuning device is provided for properly tuning two sounds that are produced simultaneously. According to the invention, a notification means is provided for notifying the user of information about a relative pitch difference value of a first pitch corresponding to a first pitch name and a second pitch corresponding to a second pitch name, which are among the pitches detected by a pitch detection means. Through the notification of the notification means, the user can check the relative pitch difference value of the two sounds that is displayed by a pitch name display means to properly tune the two sounds that are produced simultaneously. | 05-22-2014 |
Patent application number | Description | Published |
20120001194 | SEMICONDUCTOR DEVICE - A semiconductor device includes a Si substrate having a principal plane that is a crystal surface inclined at an off angle of 0.1 degrees or less with respect to a (111) plane, an AlN layer that is provided so as to contact the principal plane of the Si substrate and is configured so that an FWHM of a rocking curve of a (002) plane by x-ray diffraction is not greater than 2000 seconds, and a GaN-based semiconductor layer formed on the AlN layer. | 01-05-2012 |
20120001195 | SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR DEVICE - A semiconductor substrate inclu8des an AlN layer that is formed so as to contact a Si substrate and has an FWMH of a rocking curve of a (002) plane by x-ray diffraction, the FWMH being less than or equal to 1500 seconds, and a GaN-based semiconductor layer formed on the AlN layer. | 01-05-2012 |
20120003820 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A method for fabricating a semiconductor device includes forming an AlN layer on a substrate made of silicon by supplying an Al source without supplying a N source and then supplying both the Al source and the N source, and forming a GaN-based semiconductor layer on the AlN layer after the forming of the AlN layer. The forming of the AlN layer grows the AlN layer so as to satisfy the following: | 01-05-2012 |
20120003821 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A method for fabricating a semiconductor device includes performing thermal cleaning for a surface of a silicon substrate in an atmosphere including hydrogen under a condition that a thermal cleaning temperature is higher than or equal to 700° C. and is lower than or equal to 1060° C., and a thermal cleaning time is longer than or equal to 5 minutes and is shorter than or equal to 15 minutes; forming a first AlN layer on the substrate with a first V/III source ratio, the forming of the first AlN layer including supplying an Al source to the surface of the substrate without supplying a N source, and supplying both the Al source and the N source; forming a second AlN layer on the first AlN layer with a second V/III source ratio that is greater than the first ratio; and forming a GaN-based semiconductor layer on the second AlN layer. | 01-05-2012 |
20120025202 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A semiconductor device includes a silicon substrate; a buffer layer provided on the silicon substrate and has a band gap greater than GaN; a first GaN layer provided on the buffer layer; and a second GaN layer provided directly on the first GaN layer, a carbon concentration of the first GaN layer being higher than a carbon concentration of the second GaN layer. | 02-02-2012 |
20120025203 | SEMICONDUCTOR DEVICE - A semiconductor device includes a first GaN layer formed on a substrate, the first GaN layer including a transition metal and an impurity under constant concentration, the impurity forming a deeper energy level in the first GaN layer than energy level formed by the transition metal, a second GaN layer formed on the first GaN layer, the second GaN layer including the transition metal and the impurity under inclined concentration, an inclined direction of the transition metal being same as an inclined direction of the impurity, and an electron supply layer formed on the second GaN layer. | 02-02-2012 |
20120025205 | SEMICONDUCTOR DEVICE - A semiconductor device includes an AlGaN layer that is provided on a SiC substrate and has an acceptor concentration equal to or higher than a donor concentration, a GaN layer provided on the AlGaN layer, and an electron supply layer that is provided on the GaN layer and has a band gap greater than that of GaN. | 02-02-2012 |
20120025206 | SEMICONDUCTOR DEVICE - A semiconductor device includes a first GaN layer provided on a SIC substrate, a second GaN layer provided on the first GaN layer, and an electron supply layer that is provided on the second GaN layer and has a band gap greater than that of GaN, the first GaN layer having an acceptor concentration higher than that of the second GaN layer. | 02-02-2012 |
20120028447 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device includes growing a first GaN layer on a SiC substrate, and forming a second GaN layer on the first GaN layer, the second GaN layer being grown under such conditions that a ratio of a vertical growth rate to a horizontal growth rate is lower than that in the growth of the first GaN layer. | 02-02-2012 |
Patent application number | Description | Published |
20120315742 | METHOD FOR FORMING NITRIDE SEMICONDUCTOR DEVICE - A method for producing a nitride semiconductor device is disclosed. The method includes steps of: forming a channel layer, an InAlN doped layer sequentially on the substrate, raising a temperature of the substrate as supplying a gas source containing In, and/or another gas source containing Al, and growing GaN layer on the InAlN doped. Or, the method grows the channel layer, the InAlN layer, and another GaN layer sequentially on the substrate, raising the temperature of the substrate, and growing the GaN layer. These methods suppress the sublimation of InN from the InAlN layer. | 12-13-2012 |
20120326165 | HEMT INCLUDING AIN BUFFER LAYER WITH LARGE UNEVENNESS - A HEMT comprised of nitride semiconductor materials is disclosed. The HEMT includes, on a SiC substrate, a AlN buffer layer, a GaN channel layer, and a AlGaN doped layer. A feature of the HEMT is that the AlN buffer layer is grown on an extraordinary condition of the pressure, and has a large unevenness in a thickness thereof to enhance the release of carriers captured in traps in the substrate back to the channel layer. | 12-27-2012 |
20140183563 | NITRIDE SEMICONDUCTOR DEVICE WITH LIMITED INSTANTANEOUS CURRENT REDUCTION - A GaN device suppressing the instantaneous current reduction after the shut-off of a high frequency signal is disclosed. The GaN device provides, on a SiC substrate, an AlN layer, a GaN layer, and an AlGaN layer. The SiC substrate has an energy difference greater than 0.67 eV but less than 1.43 eV; the AlN layer has a thickness less than 50 nm; and the GaN layer has a thickness less than 1.5 μm, | 07-03-2014 |
20140252377 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREOF - The semiconductor device includes a SiC substrate; an aluminum nitride layer provided on the substrate and having an island-shaped pattern consisting of plural islands: a channel layer provided on the AlN layer and comprising a nitride semiconductor; an electron supplying layer provided on the channel layer and having a band gap larger than that of the channel layer; and a gate, source and drain electrodes on the electron supply layer. The AlN layer has an area-averaged circularity Y/X of greater than 0.2. Y is a sum of values obtained by multiplying circularities of the plural islands by areas of the plural islands respectively, X is a sum of the areas of the plural islands. The circularity are calculated by a formula of (4π×area)/(length of periphery) | 09-11-2014 |
20140346530 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device according to an embodiment of the present invention includes a SiC substrate, an AlN layer provided on the SiC substrate and having a maximum valley depth Rv of 5 nm or less in an upper surface, a channel layer provided on the AlN layer and composed of a nitride semiconductor, an electron supply layer provided on the channel layer and having a greater band gap than the channel layer, and a gate electrode, a source electrode and a drain electrode provided on the electron supply layer. | 11-27-2014 |
20140361308 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing a semiconductor device according to one aspect of the present invention includes a step of forming a first layer of InAlN, a step of forming a second layer of InAlGaN on the first layer under a growth temperature higher than that of the first layer, and a step of forming a third layer of GaN, AlGaN or InGaN under a growth temperature higher than that of the first layer. | 12-11-2014 |
20150279658 | METHOD OF GROWING NITRIDE SEMICONDUCTOR DEVICE - A method to produce a nitride semiconductor device is disclosed, The method includes a step to grow sequentially, on a substrate, an AlN layer, a AlGaN layer with the Al composition not less than 2.5% but not greater than 9%, a GaN layer with a thickness not less than 250 nm but not greater than 1400 nm. A feature of the process is that, after the growth of the AlGaN layer but before the growth of the GaN layer, at least the source gases for the group III elements are interrupted to be supplied for a period of not less than 80 seconds but not longer than 220 seconds. | 10-01-2015 |
20150279942 | PROCESS TO PRODUCE NITRIDE SEMICONDUCTOR DEVICE - A process to obtain a nitride transistor containing a gallium nitride (GaN) is disclosed. The process first grows an AlN layer on a substrate, then crown the GaN layer cc the AlN layer. Between the growth of the AlN layer and the GaN layer, the process leaves the AlN layer grown art the substrate in a temperature higher than the growth temperature of the AlN layer for a preset period. This heat treatment of the AlN layer sublimates impurities accumulated on the surface of the AlN layer and enhances the crystal quality of the GaN layer grown thereon. | 10-01-2015 |
20150332915 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing a semiconductor device according to one aspect of the present invention includes a step of forming a first layer of InAlN, a step of forming a second layer of InAlGaN on the first layer under a growth temperature higher than that of the first layer, and a step of forming a third layer of GaN, AlGaN or InGaN under a growth temperature higher than that of the first layer. | 11-19-2015 |
Patent application number | Description | Published |
20090284942 | SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF - A semiconductor device fabrication method includes: forming an elongated hole | 11-19-2009 |
20100044880 | SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MODULE - A semiconductor device includes a multilayer wiring substrate having a plurality of inner wiring layers and a semiconductor chip mounted on the multilayer wiring substrate. The multilayer wiring substrate has a groove formed in the bottom surface. The groove does not reach the lowermost of the inner wiring layers. | 02-25-2010 |
20100230801 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a first semiconductor device including an interconnect substrate having a cavity structure and a semiconductor element mounted on a bottom part of the cavity structure; and a second semiconductor device provided on and connected to the first semiconductor device via connection terminals. A sealing material is provided between the first semiconductor device and the second semiconductor device. A sloped portion is formed, at a corner portion at which the bottom part and a side wall of the cavity structure in the first semiconductor device meets, to be sloped toward a center part of the cavity structure and have a tapered shape which becomes continuously wider in the direction from an upper part to a lower part. | 09-16-2010 |
20100283129 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - An upper surface of a semiconductor substrate includes a first portion where a dielectric film is provided, and a second portion where the dielectric film is not provided, wherein the second portion is located in the periphery of the first portion. The upper surface of the semiconductor substrate is covered with a sealing resin. | 11-11-2010 |
20100295186 | SEMICONDUCTOR MODULE FOR STACKING AND STACKED SEMICONDUCTOR MODULE | 11-25-2010 |
20130299957 | SEMICONDUCTOR DEVICE - A semiconductor device includes a first extended semiconductor chip including a first semiconductor chip and an extension extending outwardly from a side surface of the first semiconductor chip. The semiconductor device also includes a second semiconductor chip mounted above the first extended semiconductor chip and electrically connected with the first semiconductor chip. The first extended semiconductor chip includes a first extension electrode pad provided above the extension and electrically connected with an electrode of the first semiconductor chip. | 11-14-2013 |
20140103504 | SEMICONDUCTOR DEVICE - A first chip including electrodes is mounted above an expanded semiconductor chip formed by providing an expanded portion at an outer edge of a second chip including chips. The electrodes of the first chip are electrically connected to the electrodes of the second chip by conductive members. A re-distribution structure is formed from a top of the first chip outside a region for disposing the conductive members along a top of the expanded portion. Connection terminals are provided above the expanded portion, and electrically connected to ones of the electrodes of the first chip via the re-distribution structure. | 04-17-2014 |
20140124911 | SEMICONDUCTOR DEVICE - A semiconductor device includes a first semiconductor chip; an extension formed at a side surface of the first semiconductor chip; a connection terminal formed on the first semiconductor chip; a re-distribution part formed over the first semiconductor chip and the extension and including an interconnect connected to the connection terminal and an insulating layer covering the interconnect; and an electrode formed above the extension on a surface of the re-distribution part and connected to the interconnect at an opening of the insulating layer. The electrode is mainly made of a material having an elastic modulus higher than that of the interconnect. The electrode includes a bonding region where the electrode is bonded to the interconnect at the opening, and an outer region closer to an end part of the extension. The interconnect is formed so as not to continuously extend to a position right below the outer region. | 05-08-2014 |
20140327157 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - A lamination structure includes a first semiconductor chip and a second semiconductor chip stacked via a bonding section so that a rear surface of the first semiconductor chip faces the main surface of the second semiconductor chip. At least a part of a side surface of the first semiconductor chip are covered with a first resin, a distribution layer is formed on the plane formed of the main surface of the first semiconductor chip and a surface of the first resin. At least part of electrodes existing in the main surface of the second semiconductor chip is electrically connected to at least part of first external electrodes formed on the distribution layer via the penetration electrodes that penetrate the first semiconductor chip. | 11-06-2014 |
Patent application number | Description | Published |
20100073410 | RECORDING APPARATUS AND RECORDING METHOD - A recording apparatus includes: an intermediate transfer member; a supply unit that supplies a curable liquid onto the intermediate transfer member, the curable liquid including at least one curable material that is cured by an external stimulus and a liquid absorbing material; a first temperature information acquisition unit that acquires temperature information related to the curable liquid; a temperature regulation unit that regulates the temperature of the curable liquid supplied onto the intermediate transfer member; an ink application unit that applies an ink onto a curable liquid layer formed on the intermediate transfer member; a transfer unit that brings the curable liquid layer onto which the ink has been applied into contact with a recording medium, and transfers the curable liquid layer from the intermediate transfer member to the recording medium; and a stimulus application unit that applies a stimulus for curing the curable liquid layer to the curable liquid layer. | 03-25-2010 |
20120105541 | LAYER FORMING DEVICE, IMAGE FORMING APPARATUS, AND COMPUTER READABLE MEDIUM - A layer forming device forms a layer of liquid absorbing particles on a surface of a layer of a hardenable solution capable of being hardened in response to a given stimulus so that the liquid absorbing particles absorb liquid drops supplied to the surface of the layer of the hardenable solution. | 05-03-2012 |
20140347427 | ULTRAVIOLET-CURABLE AQUEOUS INK, INK CARTRIDGE, RECORDING APPARATUS AND RECORDING METHOD - There is provided an ultraviolet-curable aqueous ink containing: an ultraviolet polymerizable compound; a water-insoluble thioxanthone compound having an absorption at a wavelength range of 375 nm or more and 450 nm or less, a water-insoluble tertiary amine compound, water, and a water-soluble organic solvent at least including a solvent (A) that dissolves the thioxanthone compound and the tertiary amine compound. | 11-27-2014 |
20140362150 | ULTRAVIOLET-CURABLE AQUEOUS INK, INK CARTRIDGE, RECORDING APPARATUS AND RECORDING METHOD - There is provided an ultraviolet-curable aqueous ink containing: a continuous phase containing water; and a dispersed phase dispersed in the continuous phase, wherein the dispersed phase contains a water-insoluble ultraviolet polymerizable compound, and a water-insoluble ultraviolet polymerization initiator having an absorption at a wavelength range of 375 nm or more and 450 nm or less. | 12-11-2014 |
20150251452 | RECORDING DEVICE AND RECORDING METHOD - A recording device includes an ejection head that ejects aqueous ink including a colorant, polymer particles, a light-absorbing and heat-generating agent, water, and an aqueous organic solvent, and a light irradiation device that irradiates the aqueous ink with light within one second after the aqueous ink ejected from the ejection head lands. | 09-10-2015 |
20150251456 | RECORDING APPARATUS AND RECORDING METHOD - A recording apparatus includes an ejecting head that ejects aqueous ink which includes a colorant, polymer particles, water, and an aqueous organic solvent, of which static surface tension is from 22 mN/m to 30 mN/m, and a difference between a value of dynamic surface tension after 10 msec and a value of dynamic surface tension after 1000 msec is greater than 2 mN/m and equal to or smaller than 10 mN/m, when dynamic surface tension is measured with a maximum bubble pressure technique, in an the ink droplet amount in a range of less than 10 pl. | 09-10-2015 |
Patent application number | Description | Published |
20090123760 | Article made of biodegradable resin and method of making the same - An article has a body made of a biodegradable resin. A heat insulating material covers over the surface of the body. A resin adhesive is interposed between the body and the heat insulating material. Heat insulation is achieved with such a simplified structure. Heating process is employed to melt the resin adhesive, for example. The heat insulating material can thus easily be detached from the surface of the body. Since the body is made of a biodegradable resin, the body is easily degraded in soil, for example. No waste is generated. When the body is incinerated for thermal recycle, for example, emission of carbon-dioxide is reduced to half an amount of the case where a petroleum resin is incinerated. This results in less deterioration of the environment. | 05-14-2009 |
20090272195 | Pressure detector and electronic apparatus having the same - A pressure detector configured to detect a predetermined pressure includes a housing having a concave that includes a perforation hole that perforates the housing, a sheet configured to cover the concave and to rupture when placed in an environment of the predetermined pressure or higher, and a semipermeable membrane configured to cover one end of the perforation hole, and to allow air to pass through the semipermeable membrane, the semipermeable membrane being configured to prevent water from passing through the semipermeable membrane. | 11-05-2009 |
20090314540 | Composite housing using biodegradable plastics and manufacturing method thereof - A composite housing using biodegradable plastics comprises: a metallic plate; a layer of adhesive coated on an inner face of the metallic plate; and a layer of biodegradable plastics laminated on a coating face of the layer of adhesive coated on the metallic plate, wherein the metallic plate is formed into a profile of a housing, an inner face of the formed metallic plate is coated with adhesive, the metallic plate is fitted into a female metallic mold, and biodegradable plastics are injected into a cavity formed between the adhesive coating face of the metallic plate and a male metallic mold so that the metallic plate and the biodegradable plastics are integrated with each other in the metallic mold into one body. A boss is provided in the biodegradable plastics and a circuit board can be attached onto the boss. | 12-24-2009 |
20100000755 | ENCLOSURE - An enclosure includes a main body, a metal plate, an adhesive agent and a metal-plated film. The main body is formed of resin material. The metal plate covers the back surface of the main body. The adhesive agent is provided between the main body and the metal plate. The metal-plated film is formed on the front surface of the main body and electrically connected to the metal plate. | 01-07-2010 |
20120237775 | POWDER COATING METHOD - A coating film is formed on a surface of a coating object by adhering a coating powder to the coating object by spraying the coating powder from an electrostatic gun together with a compressed gas. A voltage not smaller than 80 kV but not larger than 100 kV is applied between the electrostatic gun and the coating object. Moreover, a current flowed between the electrostatic gun and the coating object is set to be not smaller than 10 μA but not larger than 20 μA. Further, a pressure of the compressed gas for spraying the coating powder is set to be not smaller than 3 kgf/cm | 09-20-2012 |
20140078698 | ELECTRONIC APPARATUS - An electronic apparatus includes: a casing; a conductive film disposed on an inner surface of the casing, the conductive film having a recess in a surface thereof; a circuit board accommodated in the casing; a semiconductor device disposed on the circuit board; and a conductive frame fixed around the semiconductor device on the circuit board, the conductive frame being fitted in the recess. | 03-20-2014 |