Patent application number | Description | Published |
20090166687 | Image Sensor and Method for Manufacturing the Same - An image sensor and a method for manufacturing the same may include a gate on a semiconductor substrate, a photodiode on the semiconductor substrate at a first side of the gate, a floating diffusion region on the semiconductor substrate at a second side of the gate, in which the second side is opposite to the first side, a channel under the gate, the channel connecting the photodiode with the floating diffusion region, and a barrier region under the photodiode. | 07-02-2009 |
20090166694 | Image Sensor and Method for Manufacturing the Same - An image sensor and a method for manufacturing the same are provided. In the image sensor, a semiconductor substrate has a pixel region and a peripheral region defined by a first device isolation layer. First and second photodiode patterns are formed on the pixel region and are connected to lower metal lines to first and second readout circuitries. The first photodiode pattern performs as an active photodiode and the second photodiode pattern functions as a dummy pixel. The dummy pixel can measure leakage current. | 07-02-2009 |
20090194836 | IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME - An image sensor includes a semiconductor substrate including circuitry, an interlayer dielectric including metal lines arranged on the semiconductor substrate, crystalline photodiode patterns arranged on the interlayer dielectric such that the photodiode patterns are connected to the metal lines, hard mask patterns arranged on the respective photodiode patterns, a device-isolation trench interposed between the adjacent photodiode patterns, to isolate the photodiode patterns from each other, a barrier film implanted with impurity ions, arranged into the inner wall of the device-isolation trench, and a device-isolation insulating layer arranged over the interlayer dielectric including the photodiode pattern and the device-isolation trench. | 08-06-2009 |
20100090305 | IMAGE SENSOR AND METHOD FOR MANUFACTURING THEREOF - An image sensor and a method for manufacturing an image sensor. An image sensor may include a readout circuitry which may be formed on and/or over a first substrate. An image sensor may include an interlayer dielectric layer formed on and/or over a first substrate. An image sensor may include a metal line formed on and/or over an interlayer dielectric layer, and may include a top plug. An image sensor may include an image sensing device formed on and/or over a top plug. An image sensor may include a first conductive type ion implantation area formed on and/or over an area of an image sensing device corresponding to a top plug. Methods of manufacturing an image sensor are disclosed. | 04-15-2010 |
20100097770 | PRINTED CIRCUIT BOARD AND MANUFACTURING METHOD THEREOF - Disclosed are a printed circuit board and a manufacturing method thereof. The manufacturing method of a printed circuit board includes: mounting an electronic device on an upper surface of an adhesive layer; laminating an insulator on an upper side of the electronic device and a lower side of the adhesive layer, respectively, such that the electronic device is buried; and forming a circuit pattern and a via on the insulator. | 04-22-2010 |
20100178724 | ORGANIC ELECTROLUMINESCENT DISPLAY AND METHOD OF FABRICATING THE SAME - An organic electroluminescent display (“OELD”) includes an organic light-emitting diode (“OLED”), a circuit region, and an interlayer dielectric (“ILD”) layer. The OLED is disposed in each of a plurality of pixels arranged on a substrate. The circuit region includes two or more thin film transistors (“TFTs”) and a storage capacitor. The ILD layer has two or more insulating layers and includes a first region disposed between both electrodes of the storage capacitor and a second region covering the TFTs. At least one of the insulating layers has a window exposing the insulating layer directly beneath the at least one insulating layer so that that the ILD layer is thinner in the first region than in the second region. Accordingly, it is possible to reduce an occupation area of the storage capacitor while maintaining the necessary capacitance of the storage capacitor and expanding the area of the luminescent region. | 07-15-2010 |
20100178738 | TRANSISTOR, METHOD OF FABRICATING THE SAME AND ORGANIC LIGHT EMITTING DISPLAY INCLUDING THE TRANSISTOR - A transistor includes; at least two polycrystalline silicon layers disposed substantially parallel to each other, each polycrystalline silicon layer including a channel region and at least two high conductivity regions disposed at opposing sides of the channel region; a gate which corresponds to the channel region of the two polycrystalline silicon layers and which crosses the two polycrystalline silicon layers, and a gate insulating layer interposed between the gate and the two polycrystalline silicon layers, wherein low conductivity regions are disposed adjacent to one edge of the gate and are formed between the channel region and one high conductivity region of each polycrystalline silicon layer. | 07-15-2010 |
20100301324 | ORGANIC ELECTRO-LUMINESCENT DISPLAY AND METHOD OF FABRICATING THE SAME - An organic electro-luminescent display and a method of fabricating the same include an organic light emitting diode, a driving transistor which drives the organic light emitting diode, and a switching transistor which controls an operation of the driving transistor, wherein active layers of the switching and driving transistors are crystallized using silicides having different densities such that the active layer of the driving transistor has a larger grain size than the active layer of the switching layer. | 12-02-2010 |
20120015244 | ELECTRODE ASSEMBLY AND RECHARGEABLE BATTERY USING THE SAME - An electrode assembly comprises a first electrode including a first electrode current collector and a first electrode active material layer, a second electrode including a second electrode current collector and a second electrode active material layer, a separator disposed between the first electrode and the second electrode, and an electrode absorbing member in contact with the first electrode. | 01-19-2012 |
20120028422 | THIN FILM TRANSISTOR FORMED ON FLEXIBLE SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - A thin film transistor (“TFT”) includes a poly silicon layer formed on a flexible substrate and including a source region, a drain region, and a channel region, and a gate stack formed on the channel region of the poly silicon layer, wherein the gate stack includes first and second gate stacks, and a region of the poly silicon layer between the first and second gate stacks is an off-set region. A method of manufacturing the TFT is also provided. | 02-02-2012 |
20120231336 | ELECTRODE FOR RECHARGEABLE LITHIUM BATTERY AND RECHARGEABLE LITHIUM BATTERY INCLUDING THE SAME - An electrode for a rechargeable lithium battery includes an electrode active material and a copolymer represented by | 09-13-2012 |
20130136959 | SECONDARY BATTERY - A secondary battery includes a battery unit that has an accommodation space for an electrode assembly, a vent housing that defines a housing space connected with the accommodation space through a first vent hole, the vent housing including a second vent hole through which the housing space is connected with an outside of the secondary battery, a revolving member that is rotatably mounted between a closing position for closing the first and second vent holes and an opening position for opening the first and second vent holes, and first and second sealing caps that are formed at opposite sides of the revolving member with respect to a rotation axis of the revolving member. The first and second sealing caps respectively close the first and second vent holes, when the revolving member is mounted at the closing position. | 05-30-2013 |
20140308573 | SECONDARY BATTERY - A secondary battery is disclosed. In one aspect, the battery includes an electrode assembly including i) a positive electrode plate on which a positive active material is formed, ii) a negative electrode plate on which a negative active material is formed, and iii) a separator separating the positive and negative electrode plates. The battery also includes a can accommodating the electrode assembly, wherein the can has an inner surface facing the electrode assembly, an inner active material layer formed on the inner surface of the can and a securing layer covering the inner active material layer. | 10-16-2014 |