Patent application number | Description | Published |
20090165954 | ELECTRICALLY ENHANCING THE CONFINEMENT OF PLASMA - A vacuum plasma processor includes a chamber having a grounded wall and an outlet port. Plasma is excited at a first RF frequency in a chamber region spaced from the wall and outlet port. A. structure confines the plasma to the region while enabling gas to flow from the region to the outlet port. RF electric power at a second frequency connected to the confining structure causes the confining structure to be at a potential different from ground to increase the size of a sheath between the plasma and confining structure and increase the confining structure effectiveness. The region includes an electrode connected to ground by a circuit that is series resonant to the first frequency and includes capacitance of the sheath. | 07-02-2009 |
20090174983 | ELECTROSTATIC CHUCK ASSEMBLY WITH DIELECTRIC MATERIAL AND/OR CAVITY HAVING VARYING THICKNESS, PROFILE AND/OR SHAPE, METHOD OF USE AND APPARATUS INCORPORATING SAME - An electrostatic chuck assembly having a dielectric material and/or having a cavity with varying thickness, profile and/or shape is disclosed. The electrostatic chuck assembly includes a conductive support and an electrostatic chuck ceramic layer. A dielectric layer or insert is located between the conductive support and an electrostatic chuck ceramic layer. A cavity is located in a seating surface of the electrostatic chuck ceramic layer. An embedded pole pattern can be optionally incorporated in the electrostatic chuck assembly. Methods of manufacturing the electrostatic chuck assembly are disclosed as are methods to improve the uniformity of a flux field above a workpiece during a plasma processing process. | 07-09-2009 |
20100151687 | APPARATUS INCLUDING SHOWERHEAD ELECTRODE AND HEATER FOR PLASMA PROCESSING - A plasma processing apparatus includes a heater in thermal contact with a showerhead electrode, and a temperature controlled top plate in thermal contact with the heater to maintain a desired temperature of the showerhead electrode during semiconductor substrate processing. A gas distribution member supplies a process gas and radio frequency (RF) power to the showerhead electrode. | 06-17-2010 |
20100300492 | Method and Apparatus for Physical Confinement of a Liquid Meniscus over a Semiconductor Wafer - Apparatus, methods and systems for physically confining a liquid medium applied over a semiconductor wafer include a first and a second chemical head that are disposed to cover at least a portion of a top and an underside surface of the semiconductor wafer. Each of the first and the second chemical heads include an angled inlet conduit at a leading edge of the respective chemical heads to deliver liquid chemistry into a pocket of meniscus in a single phase. The pocket of meniscus is defined over the portion of the top and underside surface of the semiconductor wafer covered by the chemical heads and is configured to receive and contain the liquid chemistry applied to the surface of the semiconductor wafer as a meniscus. A step is formed at a leading edge of the first and second chemical heads along an outer periphery of the pocket of meniscus to substantially confine the meniscus of the liquid chemistry within the pocket of meniscus. The step covers at least a portion of the pocket of meniscus and the step's height is sufficient to preserve confinement characteristic of the meniscus. An inner return conduit is defined within the pocket of meniscus at a trailing edge of the respective chemical heads and is used to remove the liquid chemistry from the surface of the semiconductor wafer in a single phase after the cleaning process. | 12-02-2010 |
20110024045 | Apparatus and Method for Controlling Plasma Potential - A chamber includes a lower electrode and an upper electrode. The lower electrode is defined to transmit a radiofrequency current through the chamber and to support a semiconductor wafer in exposure to a plasma within the chamber. The upper electrode is disposed above and in a spaced apart relationship with the lower electrode. The upper electrode is electrically isolated from the chamber and is defined by a central section and one or more annular sections disposed concentrically outside the central section. Adjacent sections of the upper electrode are electrically separated from each other by a dielectric material. Multiple voltage sources are respectively connected to the upper electrode sections. Each voltage source is defined to control an electric potential of the upper electrode section to which it is connected, relative to the chamber. The electric potential of each upper electrode section influences an electric potential of the plasma within the chamber. | 02-03-2011 |
20110024046 | Apparatus and Method for Controlling Plasma Potential - An apparatus is provided for semiconductor wafer plasma processing. The apparatus includes a chamber having a lower electrode and an upper electrode disposed therein. The lower electrode is defined to transmit a radiofrequency current through the chamber to generate a plasma within the chamber. The lower electrode is also defined to support a semiconductor wafer in exposure to the plasma. The upper electrode is disposed above and in a spaced apart relationship with the lower electrode. The upper electrode is defined by a doped semiconductor material. A doping concentration within the upper electrode varies radially from a center to a periphery of the upper electrode. The electric potential of the upper electrode influences an electric potential of the plasma within the chamber. | 02-03-2011 |
20110197928 | Carrier for Reducing Entrance and/or Exit Marks Left by a Substrate-Processing Meniscus - A carrier for supporting a substrate during processing by a meniscus formed by upper and lower proximity heads is described. The carrier includes a frame having an opening sized for receiving a substrate and a plurality of support pins for supporting the substrate within the opening. The opening is slightly larger than the substrate such that a gap exists between the substrate and the opening. Means for reducing a size and frequency of entrance and/or exit marks on substrates is provided, the means aiding and encouraging liquid from the meniscus to evacuate the gap. A method for reducing the size and frequency of entrance and exit marks is also provided. | 08-18-2011 |
20120079698 | Carrier for Reducing Entrance and/or Exit Marks Left by a Substrate-Processing Meniscus - A carrier for supporting a substrate during processing by a meniscus fowled by upper and lower proximity heads is described. The carrier includes a frame having an opening sized for receiving a substrate and a plurality of support pins for supporting the substrate within the opening. The opening is slightly larger than the substrate such that a gap exists between the substrate and the opening Means for reducing a size and frequency of entrance and/or exit marks on substrates is provided, the means aiding and encouraging liquid from the meniscus to evacuate the gap. A method for reducing the size and frequency of entrance and exit marks is also provided. | 04-05-2012 |
20120240963 | METHOD AND APPARATUS FOR PHYSICAL CONFINEMENT OF A LIQUID MENISCUS OVER A SEMICONDUCTOR WAFER - Systems, methods and apparatus for making a chemical head including forming a first return chamber in the chemical head, forming a second return chamber in the chemical head, forming a plurality of first return conduits from a head surface to the first return chamber, forming a plurality of second return conduits from a head surface to the second return chamber and wherein at least one of the first return conduits and the second return conduits being formed at a first angle relative to the head surface, the first angle being greater than about 20 degrees to a meniscus plane normal. | 09-27-2012 |
20120260517 | Apparatus and Method for Reducing Substrate Pattern Collapse During Drying Operations - Apparatuses and methods for drying a surface of a substrate includes a proximity drying head having a head body that includes a process surface configured to be disposed opposite a surface of a substrate when present. The process surface includes a first region, a second region and a third region. The first region is defined at a leading edge of the head body and includes a cavity region that is recessed into the head body. The cavity region includes a plurality of inlet ports that are used to introduce a vapor fluid to the cavity region. The second region is disposed proximate to the surface of the substrate when present and is located beside the first region. The third region is disposed proximate to the surface of the substrate when present and is located beside the second region. A plurality of vacuum ports is defined at the interface of the second region and the third region. The third region includes a plurality of angled inlet ports that are directed toward the second region. A method for performing a drying operation includes applying heated isopropyl alcohol as vapor to a wafer surface in the first region and heating the underside region of the wafer corresponding to the first region. Heated Nitrogen is injected to the surface of the wafer in the third region. The deionized water and isopropyl alcohol are removed from the surface of the wafer through the vacuum ports along with the Nitrogen so as to leave the wafer surface substantially dry. | 10-18-2012 |
20130065396 | APPARATUS INCLUDING GAS DISTRIBUTION MEMBER SUPPLYING PROCESS GAS AND RADIO FREQUENCY (RF) POWER FOR PLASMA PROCESSING - A plasma processing apparatus includes a gas distribution member which supplies a process gas and radio frequency (RF) power to a showerhead electrode. The gas distribution member can include multiple gas passages which supply the same process gas or different process gases at the same or different flow rates to one or more plenums at the backside of the showerhead electrode. The gas distribution member provides a desired process gas distribution to be achieved across a semiconductor substrate processed in a gap between the showerhead electrode and a bottom electrode on which the substrate is supported. | 03-14-2013 |
20130084392 | PREVENTION OF PARTICLE ADDERS WHEN CONTACTING A LIQUID MENISCUS OVER A SUBSTRATE - A method for meniscus processing a substrate is provided. The method initiates with generating a meniscus spanning at least a length of the substrate. A pre-wetting liquid or vapor is dispensed. A substrate is moved through the dispensed pre-wetting liquid or vapor and the meniscus. The dispensed pre-wetting vapor condenses a pre-wetting liquid over a region of the substrate adjacent to a region of the substrate where the meniscus is generated. The pre-wetting liquid is deposited without substantially generating surface flow of the pre-wetting liquid on the substrate, and the pre-wetting liquid prevents the leading edge of the meniscus from contacting a dry surface region of the substrate. | 04-04-2013 |
20140041226 | Method and Apparatus for Physical Confinement of a Liquid Meniscus Over a Semiconductor Wafer - Apparatus, methods and systems for physically confining a liquid medium applied over a semiconductor wafer include a chemical head. The chemical head including multiple first return conduits formed from a first flat region in a head surface and multiple second return conduits formed from a second flat region in the head surface. The second flat region being disposed immediately adjacent to the first flat region and the second flat region being in a plane substantially parallel to and offset from the first flat region. At least one of the first return conduits and the second return conduits being formed at a first angle relative to the head surface and the first angle being greater than about 20 degrees to a meniscus plane normal. | 02-13-2014 |
Patent application number | Description | Published |
20090041951 | MAGNETIC ENHANCEMENT FOR MECHANICAL CONFINEMENT OF PLASMA - A method for processing a substrate is provided. The substrate is placed in a process chamber. A gas is provided from a gas source to the process chamber. A plasma is generated from the gas in the process chamber. The gas flows through a gap adjacent to at least one confinement ring to provide physical confinement of the plasma. Magnetic confinement of the plasma is provided to enhance the physical confinement of the plasma. | 02-12-2009 |
20090245984 | HIGH THROUGHPUT CLEANER CHAMBER - A wafer cleaning chamber comprising a plurality of carrier arms each having concentrically-mounted midpoints between opposing ends of the carrier arms with a wafer carrier mounted on each of the opposing ends of the carrier arms. A hub includes a plurality of concentrically mounted drives where each of the plurality of drives is coupled near the midpoint of a respective one of the plurality of carrier arms. Each of the plurality of drives is configured to be controlled independently of the remaining plurality of concentrically-mounted drives. A respective motor is coupled to each of the concentrically mounted drives and is configured to move the coupled carrier arm in a rotary manner under control of a program containing a velocity profile. At least one cleaning chemical-supply head is positioned proximate to a path of the wafer carriers. | 10-01-2009 |
20100124822 | APPARATUSES FOR ADJUSTING ELECTRODE GAP IN CAPACITIVELY-COUPLED RF PLASMA REACTOR - A plasma processing chamber includes a cantilever assembly configured to neutralize atmospheric load. The chamber includes a wall surrounding an interior region and having an opening formed therein. A cantilever assembly includes a substrate support for supporting a substrate within the chamber. The cantilever assembly extends through the opening such that a portion is located outside the chamber. The chamber includes an actuation mechanism operative to move the cantilever assembly relative to the wall. | 05-20-2010 |
20100159707 | GAS DISTRIBUTION SYSTEM HAVING FAST GAS SWITCHING CAPABILITIES - A gas distribution system for supplying different gas compositions to a chamber, such as a plasma processing chamber of a plasma processing apparatus is provided. The gas distribution system can include a gas supply section, a flow control section and a switching section. The gas supply section provides first and second gases, typically gas mixtures, to the flow control section, which controls the flows of the first and second gases to the chamber. The chamber can include multiple zones, and the flow control section can supply the first and second gases to the multiple zones at desired flow ratios of the gases. The gas distribution system can continuously supply the first and second gases to the switching section and the switching section is operable to switch the flows of the first and second gases, such that one of the first and second process gases is supplied to the chamber while the other of the first and second gases is supplied to a by-pass line, and then to switch the gas flows. The switching section preferably includes fast switching valves operable to quickly open and close to allow fast switching of the first and second gases, preferably without the occurrence of undesirable pressure surges or flow instabilities in the flow of either gas. | 06-24-2010 |
20110200415 | SUBSTRATE LOAD AND UNLOAD MECHANISMS FOR HIGH THROUGHPUT - In various exemplary embodiments described herein, a system includes a plurality of carrier arms each having concentrically mounted midpoints between opposing ends of the carrier arms with a wafer carrier mounted on each of the opposing ends of the carrier arms. A hub includes a plurality of concentrically mounted drives where each of the plurality of drives is coupled near the midpoint of a respective one of the plurality of carrier arms. Each of the plurality of drives is configured to be controlled independently of the remaining plurality of concentrically mounted drives. A respective motor is coupled to each of the concentrically mounted drives and is configured to move the coupled carrier arm in a rotary manner. A linear wafer transport mechanism moves wafers to or from select ones of the wafer carriers on the plurality of carrier arms to an easy handoff location for a load/unload robot. | 08-18-2011 |
20110232771 | AIRFLOW MANAGEMENT FOR LOW PARTICULATE COUNT IN A PROCESS TOOL - In various exemplary embodiments described herein, a system and related method to provide airflow management system in a substrate production tool includes a housing to couple the substrate production tool to a fan filter unit to provide filtered air to the housing, a facility connection to couple the substrate production tool to a reduced pressure exhaust mechanism, a substrate transfer section coupled below the housing and in airflow communication with the facility connection, and a substrate process area coupled to the substrate transfer section by one or more substrate transfer slots. A chamber substantially containing the substrate transfer section and the substrate process area is coupled to the housing to receive the filtered air and to the facility connection to provide an exhaust for excess gas flow. The chamber maintains a low pressure in the substrate process area relative to the substrate transfer section. | 09-29-2011 |
20110236159 | REDUCTION OF PARTICLE CONTAMINATION PRODUCED BY MOVING MECHANISMS IN A PROCESS TOOL - In various exemplary embodiments described herein, a system and related method to reduce particle contamination on substrates is disclosed. The system includes a substrate traverser mechanism having tracks to transport substrate carriers with one or more traverser ducts arranged to surround, at least partially, the tracks. The one or more ducts have slits along at least a substantial portion of a length of the tracks. A traverser exhaust fan is coupled to one end of each of the one or more traverser ducts. The fan provides sufficient volumetric airflow such that a velocity of the volumetric airflow through the slits is greater than a terminal settling velocity of a predetermined particle size. The fan draws particles less than approximately the predetermined particle size generated by the substrate traverser mechanism into the one or more traverser ducts. | 09-29-2011 |
20110281435 | FAST GAS SWITCHING PLASMA PROCESSING APPARATUS - A plasma chamber with a plasma confinement zone with an electrode is provided. A gas distribution system for providing a first gas and a second gas is connected to the plasma chamber, wherein the gas distribution system can substantially replace one gas in the plasma zone with the other gas within a period of less than 1 s. A first frequency tuned RF power source for providing power to the electrode in a first frequency range is electrically connected to the at least one electrode wherein the first frequency tuned RF power source is able to minimize a reflected RF power. A second frequency tuned RF power source for providing power to the plasma chamber in a second frequency range outside of the first frequency range wherein the second frequency tuned RF power source is able to minimize a reflected RF power. | 11-17-2011 |
20130342951 | Techniques for reducing arcing-related damage in a clamping ring of a plasma processing system - A clamping ring configured to be coupled to a chamber structure of a plasma processing chamber is disclosed. The clamping ring has a plurality of holes for accommodating a plurality of fasteners. The clamping ring includes a plurality of flanges disposed around an outer periphery of the clamping ring, adjacent flanges of the plurality of flanges being disposed such that a hole of the plurality of holes that is disposed in between the adjacent flanges is about equidistant from the adjacent flanges. The plurality of flanges are configured to mate with the chamber structure. The clamping ring and the flanges are dimensioned such that when the plurality of flanges mate with the chamber structure, recesses between adjacent ones of the plurality of flanges form gaps between the clamping ring and the chamber structure. | 12-26-2013 |
20140033828 | METHODS FOR VERIFYING GAS FLOW RATES FROM A GAS SUPPLY SYSTEM INTO A PLASMA PROCESSING CHAMBER - Methods of measuring gas flow rates in a gas supply system for supplying gas to a plasma processing chamber are provided. In a differential flow method, a flow controller is operated at different set flow rates, and upstream orifice pressures are measured for the set flow rates at ambient conditions. The measured orifice pressures are referenced to a secondary flow verification method that generates corresponding actual gas flow rates for the different set flow rates. The upstream orifice pressures can be used as a differential comparison for subsequent orifice pressure measurements taken at any temperature condition of the chamber. In an absolute flow method, some parameters of a selected gas and orifice are predetermined, and other parameters of the gas are measured while the gas is being flowed from a flow controller at a set flow rate through an orifice. In this method, any flow controller set point can be flowed at any time and at any chamber condition, such as during plasma processing operations. Gas supply systems are also disclosed. | 02-06-2014 |
20150040757 | AIRFLOW MANAGEMENT FOR LOW PARTICULATE COUNT IN A PROCESS TOOL - A method of providing airflow management in a substrate production tool includes providing a first mechanism coupling the substrate production tool to a fan filter unit. The fan filter unit provides filtered air to the substrate production tool. A second mechanism couples the substrate production tool to a reduced pressure exhaust mechanism. The reduced pressure exhaust mechanism provides an exhaust for excess gas flow within the substrate production tool. A substrate process area of the substrate production tool is maintained at a lower pressure than a pressure of a substrate transfer section of the substrate production tool. The substrate process area maintains a higher pressure than a pressure of the reduced pressure exhaust mechanism. The substrate transfer section maintains a higher pressure than the pressure of the reduced pressure exhaust mechanism. | 02-12-2015 |
Patent application number | Description | Published |
20080286789 | GENOMIC POLYMORPHISM FOR PREDICTING THERAPEUTIC RESPONSE - The present invention relates to the use of genomic polymorphism to provide individualized therapeutic regimens to treat patients suffering from diseases such as cancer. The invention discloses methods for determining the efficacy or choice of chemotherapeutic drugs and regimens for use in treating a diseased patient by associating genomic polymorphism with the effectiveness of the drugs or regimens, or by associating genomic polymorphism with the intratumoral expression of a gene whereby the gene expression affects effectiveness of the drugs or regimens. In particular, the present invention provides novel methods for screening therapeutic regimens, which comprise determining a patient's genotype at a tandemly repeated 28 base pair region in the thymidilate synthase (TS) gene's 5′ untranslated region (UTR). Patients homozygous for a triple repeat will be least successfully treated with a thymidylate synthase directed drug, while those heterozygous for a triple and a double repeat will be more successfully treated, and those homozygous for a double repeat will be even more successfully treated. Those patients homozygous for the double repeat will likely suffer the least side effects from thymidylate synthase directed drugs such as 5-FU. | 11-20-2008 |
20120094291 | FCgamma POLYMORPHISMS FOR PREDICTING DISEASE AND TREATMENT OUTCOME - The invention provides compositions and methods for determining the likelihood of successful treatment with Cetuximab or other equivalent. The methods comprise determining the genomic polymorphism present in a predetermined region of the FcγRIIa gene at amino acid position 131 and/or alternatively the FcγRIIIa gene at amino acid position 158. | 04-19-2012 |
20120129178 | GENOMIC POLYMORPHISM FOR PREDICTING THERAPEUTIC RESPONSE - The present invention relates to the use of genomic polymorphism to provide individualized therapeutic regimens to treat patients suffering from diseases such as cancer. The invention discloses methods for determining the efficacy or choice of chemotherapeutic drugs and regimens for use in treating a diseased patient by associating genomic polymorphism with the effectiveness of the drugs or regimens, or by associating genomic polymorphism with the intratumoral expression of a gene whereby the gene expression affects effectiveness of the drugs or regimens. In particular, the present invention provides novel methods for screening therapeutic regimens, which comprise determining a patient's genotype at a tandemly repeated 28 base pair region in the thymidilate synthase (TS) gene's 5′ untranslated region (UTR). Patients homozygous for a triple repeat will be least successfully treated with a thymidylate synthase directed drug, while those heterozygous for a triple and a double repeat will be more successfully treated, and those homozygous for a double repeat will be even more successfully treated. Those patients homozygous for the double repeat will likely suffer the least side effects from thymidylate synthase directed drugs such as 5-FU. | 05-24-2012 |
20120288861 | GERMLINE POLYMORPHISMS IN THE SPARC GENE ASSOCIATED WITH CLINICAL OUTCOME IN GASTRIC CANCER - This disclosure provides compositions and methods for determining the likely tumor recurrence of gastric cancer patients based on genomic polymorphisms of the SPARC gene. The disclosure also provides compositions and methods for selecting gastric cancer patients for appropriate treatments and methods of treating them. | 11-15-2012 |
20120289410 | GENETIC VARIANT IN FORMYL PEPTIDE RECEPTOR 2 (FPR2) PREDICTS CLINICAL OUTCOME IN CANCER PATIENTS - The disclosure provides compositions and methods for determining the likely tumor recurrence in cancer patients by screening formyl peptide receptor 2 (FPR2) polymorphism in samples isolated from the patient. | 11-15-2012 |
20120289424 | IGF1R POLYMORPHISM PREDICTS TUMOR RECURRENCE IN BREAST CANCER PATIENTS - The disclosure provides compositions and methods for determining the likely tumor recurrence in breast cancer patients by screening IGFR1 polymorphism in samples isolated from the patient. | 11-15-2012 |
20120289592 | ERCC1 GENE EXPRESSION LEVEL IS ASSOCIATED WITH CLINICAL OUTCOMES IN ESOPHAGEAL CANCER PATIENTS - The disclosure provides compositions and methods for identifying a cancer patient, such as an esophageal cancer patient, suitable for a therapy that includes administration of a platinum drug and radiation pre-operatively, based on the expression level of an ERCC1 gene. After determining if a patient is likely to be successfully treated, the disclosure also provides methods for treating the patients. | 11-15-2012 |
20130023430 | CANCER STEM CELL GENE VARIANTS ARE ASSOCIATED WITH TUMOR RECURRENCE - The disclosure provides compositions and methods for determining the likely tumor recurrence in cancer patients by screening CD44, CD166 and/or LGR5 polymorphism in samples isolated from the patient. | 01-24-2013 |
20140005064 | POLYMORPHISMS IN ANGIOGENESIS PATHWAY GENES ASSOCIATED WITH TUMOR RECURRENCE IN SURGERY TREATED CANCER PATIENTS | 01-02-2014 |