Patent application number | Description | Published |
20100124244 | SEMICONDUCTOR LASER DEVICE - A semiconductor laser device includes a semiconductor layer including an active layer. The active layer includes: a gain region; an end face window region formed in a region of the active layer including an end face of the semiconductor layer, and having a larger band gap energy than the gain region; and a transition region formed between the gain region and the end face window region. The band gap energy of the transition region continuously changes from the band gap energy of the gain region to that of the end face window region. The gain region and a portion of the transition region located near the gain region form a current injection portion into which current is injected. The end face window region and a portion of the transition region located near the end face window region form a current non-injection portion into which current is prevented from being injected. | 05-20-2010 |
20110222568 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device includes a first cladding layer | 09-15-2011 |
20110286487 | SEMICONDUCTOR LASER DEVICE - A semiconductor laser device includes, on an n-type GaAs substrate, an n-type GaAs contact layer, an n-type first quantum well heterobarrier layer, an n-type AlGaInP cladding layer, a strained quantum well active layer (a first guide layer, GaInP well layers, AlGaInP barrier layers, and a second guide layer), a p-type AlGaInP cladding layer, a p-type GaInP intermediate layer, and a p-type GaAs contact layer, which are formed in this stated order. The semiconductor laser device can perform high-temperature and high-power operation at a lower operating voltage. | 11-24-2011 |
Patent application number | Description | Published |
20120222707 | NOZZLE, SUBSTRATE PROCESSING APPARATUS, AND SUBSTRATE PROCESSING METHOD - A nozzle for discharging droplets of a processing liquid for processing a substrate has a main body including a supply port, a drain port, a processing liquid flow passageway connecting the supply port and the drain port, and a plurality of discharge ports from which the processing liquid is discharged. The processing liquid flow passageway includes a plurality of branch flow channels, which branch out between the supply port and the drain port and collect together between the supply port and the drain port. The plurality of discharge ports form a plurality of columns respectively corresponding to the plurality of branch flow channels; and are aligned along and connected to the corresponding branch flow channels. A piezo element applies vibration to the processing liquid flowing through the plurality of branch flow channels. | 09-06-2012 |
20120240958 | SUBSTRATE TREATMENT APPARATUS AND SUBSTRATE TREATMENT METHOD - A substrate treatment apparatus includes a treatment vessel in which a substrate is accommodated, a treatment liquid supply unit, a chamber enclosing the treatment vessel, a substrate holding unit, a circulation unit and a control unit. The circulation unit circulates the treatment liquid from the treatment vessel through a circulation path extending through a filter and a temperature controller and spouts the treatment liquid toward the substrate accommodated in the treatment vessel to recover the treatment liquid in the treatment vessel. The control unit controls the liquid surface level of the treatment liquid retained in the treatment vessel below the substrate held at a substrate treatment position. | 09-27-2012 |
20150053244 | NOZZLE, AND SUBSTRATE PROCESSING APPARATUS - A nozzle for discharging droplets of a processing liquid for processing a substrate has a main body including a supply port, a drain port, a processing liquid flow passageway connecting the supply port and the drain port, and a plurality of discharge ports from which the processing liquid is discharged. The processing liquid flow passageway includes a plurality of branch flow channels, which branch out between the supply port and the drain port and collect together between the supply port and the drain port. The plurality of discharge ports form a plurality of columns respectively corresponding to the plurality of branch flow channels; and are aligned along and connected to the corresponding branch flow channels. A piezo element applies vibration to the processing liquid flowing through the plurality of branch flow channels. | 02-26-2015 |
20150083167 | SUBSTRATE TREATMENT METHOD AND SUBSTRATE TREATMENT APPARATUS - A substrate treatment method is provided, which includes a rinsing step of supplying a rinse liquid to a front surface of a rotating substrate after a chemical liquid step. The rinsing step includes a higher-speed rinsing step and a deceleration rinsing step to be performed after the higher-speed rinsing step. The deceleration rinsing step includes a liquid puddling step of reducing the rotation speed of the substrate within a rotation speed range lower than a rotation speed employed in the higher-speed rinsing step and supplying the rinse liquid to the front surface of the substrate at a flow rate higher than a maximum supply flow rate employed in the higher-speed rinsing step, whereby a puddle-like rinse liquid film is formed on the front surface of the substrate. | 03-26-2015 |
Patent application number | Description | Published |
20100071272 | COLLOIDAL SILICA, AND METHOD FOR PRODUCTION THEREOF - The present invention provides dense silica particles with reduced metal impurities. Specifically, the present invention provides a colloidal silica produced by using an alkyl silicate as a starting material, wherein, with respect to a sample prepared by adding, as an internal standard, 1 wt. % of polydimethylsilane to a dried product of the colloidal silica, a peak area value calculated using a formula of a colloidal silica peak area/a polydimethylsilane peak area is 15 or less, the peak areas being determined by an obtained solid-state | 03-25-2010 |
20110163262 | COLLOIDAL SILICA CONTAINING SILICA SECONDARY PARTICLES HAVING BENT STRUCTURE AND/OR BRANCHED STRUCTURE, AND METHOD FOR PRODUCING SAME - This invention provides a dense, high-purity colloidal silica containing silica secondary particles having a branched and/or bent structure, and a production method thereof. Specifically, this invention provides a method for producing a colloidal silica, comprising the steps of 1) preparing a mother liquid containing an alkali catalyst and water, and having a pH of 9 to 12; and 2) adding a hydrolysis liquid obtained by hydrolysis of an alkyl silicate to the mother liquid, wherein the step of adding the hydrolysis liquid to the mother liquid sequentially comprises A) step 1 of adding the hydrolysis liquid until the pH of the resulting liquid mixture becomes less than 7; B) step 2 of adding an aqueous alkali solution until the pH of the liquid mixture becomes 7 or more; and C) step 3 of adding the hydrolysis liquid while maintaining the pH of the liquid mixture at 7 or more, and a colloidal silica containing silica secondary particles having a branched and/or bent structure, obtained by this method. | 07-07-2011 |
Patent application number | Description | Published |
20090160063 | Semiconductor Device - A semiconductor device includes a semiconductor substrate; a sealing resin layer formed on a top face of the semiconductor substrate; a metal post formed on the top face of the semiconductor substrate such that a top face of the metal post is exposed through the sealing resin layer; a projecting electrode formed on the top face of the metal post; and a low-elasticity resin layer made of a resin material with an elasticity modulus lower than that of the sealing resin layer and formed on the top face of the sealing resin layer such that part of the low-elasticity resin layer lies between the projecting electrode and the sealing resin layer. | 06-25-2009 |
20100001408 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - The semiconductor device according to the present invention includes: a semiconductor chip including a wire and a passivation film formed on the outermost surface with an opening partially exposing the wire; a resin layer stacked on the semiconductor chip and provided with a through-hole in a position opposed to a portion of the wire facing the opening; and a pad formed on a peripheral portion of the through-hole in the resin layer and in the through-hole so that an external connection terminal is arranged on the surface thereof. The peripheral portion of the resin layer is formed more thickly than the remaining portion of the resin layer other than the peripheral portion. | 01-07-2010 |
20100187659 | Semiconductor device and method for manufacturing semiconductor device - An inventive semiconductor device includes a semiconductor chip having a passivation film, and a sealing resin layer provided over the passivation film for sealing a front side of the semiconductor chip. The sealing resin layer extends to a side surface of the passivation film to cover the side surface. | 07-29-2010 |
20110237064 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device includes a semiconductor chip having a wire and a passivation film formed on the outermost surface with an opening partially exposing the wire. A resin layer is stacked on the semiconductor chip and provided with a through-hole in a position opposed to a portion of the wire facing the opening. A pad is formed on a peripheral portion of the through-hole in the resin layer and in the through-hole so that an external connection terminal is arranged on the surface thereof. The peripheral portion of the resin layer is formed more thickly than the remaining portion of the resin layer other than the peripheral portion. | 09-29-2011 |
20120032325 | SEMICONDUCTOR DEVICE - There is provided a semiconductor device with which stress can be prevented from locally concentrating on an external connecting terminal on a post and thus damages of the external connecting terminal can be prevented. The semiconductor device includes a semiconductor chip, a sealing resin layer stacked on a surface of the semiconductor chip, and the post which penetrates the sealing resin layer in a stacking direction of the semiconductor chip and the sealing resin layer, protrudes from the sealing resin layer, and has a periphery of the protruding portion opposedly in contact with a surface of the sealing resin layer in the stacking direction. | 02-09-2012 |
20130140710 | SEMICONDUCTOR DEVICE INCLUDING A PROTECTIVE FILM - A semiconductor device includes a semiconductor chip having a wire and a passivation film formed on the outermost surface with an opening partially exposing the wire. A resin layer is stacked on the semiconductor chip and provided with a through-hole in a position opposed to a portion of the wire facing the opening. A pad is formed on a peripheral portion of the through-hole in the resin layer and in the through-hole so that an external connection terminal is arranged on the surface thereof. The peripheral portion of the resin layer is formed more thickly than the remaining portion of the resin layer other than the peripheral portion. | 06-06-2013 |
20130221530 | SEMICONDUCTOR DEVICE - There is provided a semiconductor device with which stress can be prevented from locally concentrating on an external connecting terminal on a post and thus damages of the external connecting terminal can be prevented. The semiconductor device includes a semiconductor chip, a sealing resin layer stacked on a surface of the semiconductor chip, and the post which penetrates the sealing resin layer in a stacking direction of the semiconductor chip and the sealing resin layer, protrudes from the sealing resin layer, and has a periphery of the protruding portion opposedly in contact with a surface of the sealing resin layer in the stacking direction. | 08-29-2013 |
20140077373 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - An inventive semiconductor device includes a semiconductor chip having a passivation film, and a sealing resin layer provided over the passivation film for sealing a front side of the semiconductor chip. The sealing resin layer extends to a side surface of the passivation film to cover the side surface. | 03-20-2014 |
20140291845 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - An inventive semiconductor device includes a semiconductor chip having a passivation film, and a sealing resin layer provided over the passivation film for sealing a front side of the semiconductor chip. The sealing resin layer extends to a side surface of the passivation film to cover the side surface. | 10-02-2014 |