Patent application number | Description | Published |
20090159917 | SEMICONDUCTOR LIGHT EMITTING DEVICE - Provided are a semiconductor light emitting device and a method for fabricating the same. The semiconductor light emitting device comprises a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer comprising a dual roughness structure on the active layer. | 06-25-2009 |
20090261370 | SEMICONDUCTOR LIGHT EMITTING DEVICE - Disclosed is a semiconductor light emitting device. The semiconductor light emitting device comprises a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, a second conductive semiconductor layer under the active layer, a second electrode layer under the second conductive semiconductor layer, and a transmissive conductive layer at least one part between the second conductive semiconductor layer and the second electrode layer. | 10-22-2009 |
20100019264 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device including a second electrode layer; a light emitting unit including a plurality of compound semiconductor layers under one portion of the second electrode layer; a first insulating layer under the other portion of the second electrode; an electrostatic protection unit including a plurality of compound semiconductor layer under the first insulating layer; a first electrode layer electrically connecting the light emitting unit to the electrostatic protection unit; and a wiring layer electrically connecting the electrostatic protection unit to the second electrode layer. | 01-28-2010 |
20100090237 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device and corresponding method of manufacture, where the semiconductor light emitting device includes a light emitting structure, a second electrode layer, an insulating layer, and a protrusion. The light emitting structure comprises a second conductive semiconductor layer, an active layer under the second conductive semiconductor layer, and a first conductive semiconductor layer under the active layer. The second electrode layer is formed on the light emitting structure. The insulating layer is formed along the circumference of the top surface of the light emitting structure. The protrusion protrudes from the undersurface of the insulating layer to the upper part of the first conductive semiconductor layer. | 04-15-2010 |
20100096646 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND LIGHT EMITTING APPARATUS HAVING THEREOF - Embodiments relate to a semiconductor light emitting device and a light emitting apparatus comprising the same. The semiconductor light emitting device according to embodiments comprises a plurality of light emitting cells comprising a plurality of compound semiconductor layers; a plurality of ohmic contact layers on the light emitting cells; a first insulating layer on the ohmic contact layer; a second electrode layer electrically connected to a first light emitting cell of the light emitting cells; and a plurality of interconnection layers connecting the light emitting cells in series. | 04-22-2010 |
20100096660 | SEMICONDUCTOR LIGHT EMITTING DEVICE - Disclosed are a semiconductor light emitting device. The semiconductor light emitting device comprises a light emitting structure comprising a plurality of compound semiconductor layers, a passivation layer at the outside of the light emitting structure, a first electrode layer on the light emitting structure, and a second electrode layer under the light emitting structure. | 04-22-2010 |
20100102350 | SEMICONDUCTOR LIGHT EMITTING DEVICE - Disclosed is a semiconductor light emitting device. The semiconductor light emitting device comprises a light emitting structure comprising a plurality of compound semiconductor layers, an electrode layer on the light emitting structure, a conductive support member on the electrode layer, a conductive layer formed along a peripheral portion of an upper surface of the light emitting structure, and an insulating layer on the conductive layer. | 04-29-2010 |
20100102355 | SEMICONDUCTOR LIGHT EMITTING DEVICE - Embodiments relate to a semiconductor light emitting device. The semiconductor light emitting device according to embodiments comprises a light emitting structure comprising a plurality of compound semiconductor layers; a first electrode under the light emitting structure; a second electrode layer on the light emitting structure; a first insulating layer between the light emitting structure and the second electrode layer; and a metal layer formed under the first insulating layer and electrically connected to the first electrode. | 04-29-2010 |
20100109032 | SEMICONDUCTOR LIGHT EMITTING DEVICE - Disclosed are a semiconductor light emitting device. The semiconductor light emitting device includes a plurality of compound semiconductor layers including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer; a pad under the plurality of compound semiconductor layers; an electrode layer on the plurality of compound semiconductor layers; and a shock supporting member disposed on the plurality of compound semiconductor layers and corresponding to the pad. | 05-06-2010 |
20100123147 | SEMICONDUCTOR LIGHT EMITTING DEVICE - Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes a light emitting structure including a plurality of compound semiconductor layers including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer; an electrode layer on the plurality of compound semiconductor layers; and a channel layer including protrusion and formed along a peripheral portion of an upper surface of the plurality of compound semiconductor layers. | 05-20-2010 |
20100127285 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device is provided. The semiconductor light emitting device comprises a conductive supporting member, an N-type semiconductor layer on the conductive supporting member; an active layer on the N-type semiconductor layer, a P-type semiconductor layer on the active layer, an ohmic contact layer on the P-type semiconductor layer, and an electrode on the ohmic contact layer. | 05-27-2010 |
20100127297 | SEMICONDUCTOR LIGHT-EMITTING DEVICE - Embodiments relate to a semiconductor light-emitting device. | 05-27-2010 |
20100163893 | SEMICONDUCTOR LIGHT EMITTING DEVICE - Provided is a semiconductor light emitting device. | 07-01-2010 |
20100187558 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF FABRICATING THE SAME - Provided are a semiconductor light emitting device and a method of fabricating the same. The semiconductor light emitting device comprises: a light emitting structure comprising a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer; a nitride semiconductor layer on an outer periphery of the second conductive semiconductor layer; and an ohmic layer on the second conductive semiconductor layer. | 07-29-2010 |
20100207128 | SEMICONDUCTOR LIGHT EMITTING DEVICE - Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, a plurality of isolation layers formed along an outer peripheral portion of the light emitting structure below the light emitting structure, a metal layer interposed between the isolation layers, and a second electrode layer formed below the light emitting structure. | 08-19-2010 |
20100207151 | SEMICONDUCTOR LIGHT EMITTING DEVICE - Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer below the first conductive semiconductor layer, and a second conductive semiconductor layer below the active layer; a channel layer below the light emitting structure, in which an inner portion of the channel layer is disposed along an outer peripheral portion of the light emitting structure and an outer portion of the channel layer extends out of the light emitting structure; and a second electrode layer below the light emitting structure. | 08-19-2010 |
20100207158 | SEMICONDUCTOR LIGHT EMITTING DEVICE - The embodiment discloses a semiconductor light emitting device. The semiconductor light emitting device includes a first conductive semiconductor layer; a first electrode layer below the first conductive semiconductor layer; a semiconductor layer at an outer peripheral portion of the first conductive semiconductor layer; an active layer on the first conductive semiconductor layer; a second conductive semiconductor layer on the active layer; and a second electrode layer on the second conductive semiconductor layer. | 08-19-2010 |
20100207159 | SEMICONDUCTOR LIGHT EMITTING DEVICE - Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes a light emitting structure including a plurality of compound semiconductor layers, a second electrode layer below the light emitting structure, a channel layer between the light emitting structure and an edge area of the second electrode layer, a buffer layer on the channel layer, and a passivation layer on the buffer layer. | 08-19-2010 |
20100230703 | LIGHT EMITTING DEVICE FABRICATION METHOD THEREOF, AND LIGHT EMITTING APPARATUS - A light emitting device is provided. The light emitting device comprises a conductive substrate, a reflection layer, a support layer, an ohmic contact layer, and a light emitting semiconductor layer. The reflection layer is disposed on the conductive substrate. The support layer is disposed partially on the reflection layer. The ohmic contact layer is disposed at the side of the support layer. The light emitting semiconductor layer is disposed on the ohmic contact layer and the support layer. | 09-16-2010 |
20100230705 | LIGHT EMITTING DEVICE, METHOD FOR MANUFACTURING LIGHT EMITTING DEVICE, AND LIGHT EMITTING APPARATUS - A light emitting device according to the embodiment includes a reflecting layer; an adhesion layer including an oxide-based material on the reflecting layer; an ohmic contact layer on the adhesion layer; and a light emitting structure layer on the ohmic contact layer. | 09-16-2010 |
20110001160 | SEMICONDUCTOR LIGHT EMITTING DEVICE HAVING ROUGHNESS LAYER - A semiconductor light emitting device includes a substrate, a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, a second conductive semiconductor layer on the active layer, and a roughness layer on the second conductive semiconductor layer. The second conductive semiconductor layer includes a shape of multiple horns, and the roughness layer includes a shape of multiple horns. The second conductive semiconductor layer includes a roughness in which horn shapes and inverse-horn-shaped shapes are alternately formed, and the roughness has a height of about 0.5 μm to about 1.2 μm and a diameter of about 0.3 μm to about 1.0 μm. | 01-06-2011 |
20110062477 | SEMICONDUCTOR LIGHT EMITTING DEVICE - Disclosed are a semiconductor light emitting device. The semiconductor light emitting device comprises a light emitting structure comprising a plurality of compound semiconductor layers, a passivation layer at the outside of the light emitting structure, a first electrode layer on the light emitting structure, and a second electrode layer under the light emitting structure. | 03-17-2011 |
20110084306 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device and corresponding method of manufacture, where the semiconductor light emitting device includes a light emitting structure, a second electrode layer, an insulating layer, and a protrusion. The light emitting structure comprises a second conductive semiconductor layer, an active layer under the second conductive semiconductor layer, and a first conductive semiconductor layer under the active layer. The second electrode layer is formed on the light emitting structure. The insulating layer is formed along the circumference of the top surface of the light emitting structure. The protrusion protrudes from the undersurface of the insulating layer to the upper part of the first conductive semiconductor layer. | 04-14-2011 |
20110089436 | LIGHT EMITTING DEVICE, METHOD OF MANUFACTURING THE SAME, LIGHT EMITTING DEVICE PACKAGE AND LIGHTING SYSTEM - A method of manufacturing a light emitting device according to the embodiment includes the steps of partially forming a first buffer layer on a growth substrate, in which the first buffer layer has a Young's modulus smaller than that of the growth substrate; and forming a light emitting structure layer on the growth substrate and the first buffer layer, in which the light emitting structure layer includes a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer interposed between the first and second conductive semiconductor layers. | 04-21-2011 |
20110089450 | SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR FABRICATING THE SAME - A semiconductor light-emitting device is provided. The semiconductor light-emitting device may include a light-emitting structure, an electrode, an ohmic layer, an electrode layer, an adhesion layer, and a channel layer. The light-emitting structure may include a compound semiconductor layer. The electrode may be disposed on the light-emitting structure. The ohmic layer may be disposed under the light-emitting structure. The electrode layer may include a reflective metal under the ohmic layer. The adhesion layer may be disposed under the electrode layer. The channel layer may be disposed along a bottom edge of the light-emitting structure. | 04-21-2011 |
20110089451 | SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR FABRICATING THE SAME - A semiconductor light-emitting device is provided that may include an electrode layer, a light-emitting structure including a compound semiconductor layer on the electrode layer, and an electrode on the light-emitting structure, wherein the electrode includes an ohmic contact layer that contacts the compound semiconductor layer, a first barrier layer on the ohmic contact layer, a conductive layer including copper on the first barrier layer, a second barrier layer on the conductive layer, and a bonding layer on the second barrier layer. | 04-21-2011 |
20110089452 | SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR FABRICATING THE SAME - A semiconductor light-emitting device is provided. The semiconductor light-emitting device may include a light-emitting structure, an electrode, a reflective layer, a conductive support member, and a channel layer. The light-emitting structure may include a plurality of compound semiconductor layers. The electrode may be disposed on the compound semiconductor layer. The reflective layer may be disposed under the compound semiconductor layer. The conductive support member may be disposed under the reflective layer. The channel layer may be disposed along a bottom edge of the compound semiconductor layer. | 04-21-2011 |
20110121343 | SEMICONDUCTOR LIGHT EMITTING DEVICE - Disclosed is a semiconductor light emitting device. The semiconductor light emitting device comprises a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, a second conductive semiconductor layer under the active layer, a second electrode layer under the second conductive semiconductor layer, and a transmissive conductive layer at least one part between the second conductive semiconductor layer and the second electrode layer. | 05-26-2011 |
20110140158 | SEMICONDUCTOR LIGHT EMITTING DEVICE - Disclosed is a semiconductor light emitting device. An embodiment of the semiconductor light emitting device includes a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, a second conductive semiconductor layer under the active layer, a second electrode layer under the second conductive semiconductor layer, and a transmissive conductive layer at least one part between the second conductive semiconductor layer and the second electrode layer. | 06-16-2011 |
20110207252 | LIGHT EMTTING DEVICE, METHOD FOR MANUFACTURING LIGHT EMITTING DEVICE, AND LIGHT EMITTING APPARATUS - A light emitting device according to the embodiment includes a reflecting layer; an adhesion layer including an oxide-based material on the reflecting layer; an ohmic contact layer on the adhesion layer; and a light emitting structure layer on the ohmic contact layer. | 08-25-2011 |
20110241065 | SEMICONDUCTOR LIGHT EMITTING DEVICE - Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes a light emitting structure including a plurality of compound semiconductor layers including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer; an electrode layer on the plurality of compound semiconductor layers; and a channel layer including protrusion and formed along a peripheral portion of an upper surface of the plurality of compound semiconductor layers. | 10-06-2011 |
20110260207 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to an embodiment of the present invention, a semiconductor light emitting device includes a light emitting structure including a plurality of compound semiconductor layers, an electrode layer disposed under the light emitting structure, an electrode disposed on the light emitting structure, a conductive support member disposed under the electrode layer, a conductive layer disposed between the light emitting structure and the conductive support member, and an insulating layer disposed between the conductive support member and the light emitting structure, wherein the electrode layer is in contact with a first area of a lower surface of the light emitting structure and the conductive layer is in contact with a second area of the lower surface of the light emitting structure, and wherein the conductive layer includes a different material from the electrode layer. | 10-27-2011 |
20120112232 | SEMICONDUCTOR LIGHT EMITTING DEVICE - Disclosed are a semiconductor light emitting device. The semiconductor light emitting device comprises a light emitting structure comprising a plurality of compound semiconductor layers, a passivation layer at the outside of the light emitting structure, a first electrode layer on the light emitting structure, and a second electrode layer under the light emitting structure. | 05-10-2012 |
20120112233 | SEMICONDUCTOR LIGHT EMITTING DEVICE - Discussed is a semiconductor light emitting device. The semiconductor light emitting device includes a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, a second conductive semiconductor layer under the active layer, a second electrode layer under the second conductive semiconductor layer, and a transmissive conductive layer at least one part between the second conductive semiconductor layer and the second electrode layer. | 05-10-2012 |
20120126278 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device including a second electrode layer; a light emitting unit including a plurality of compound semiconductor layers under one portion of the second electrode layer; a first insulating layer under the other portion of the second electrode; an electrostatic protection unit including a plurality of compound semiconductor layer under the first insulating layer; a first electrode layer electrically connecting the light emitting unit to the electrostatic protection unit; and a wiring layer electrically connecting the electrostatic protection unit to the second electrode layer. | 05-24-2012 |
20120280268 | SEMICONDUCTOR LIGHT EMITTING DEVICE - Disclosed are a semiconductor light emitting device. The semiconductor light emitting device includes a plurality of compound semiconductor layers including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer; a pad on the plurality of compound semiconductor layers; an electrode layer under the plurality of compound semiconductor layers; and a supporting member disposed under the plurality of compound semiconductor layers and corresponding to the pad. | 11-08-2012 |
20130056771 | SEMICONDUCTOR LIGHT EMITTING DEVICE - Disclosed is a semiconductor light emitting device. The semiconductor light emitting device comprises a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, a second conductive semiconductor layer under the active layer, a second electrode layer under the second conductive semiconductor layer, and a transmissive conductive layer at least one part between the second conductive semiconductor layer and the second electrode layer. | 03-07-2013 |
20130056789 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device includes a conductive support member; a light emitting structure under the conductive support member; an insulating layer including a protrusion disposed along an outer circumference of the light emitting structure; an electrode layer having an outer portion on the insulating layer and an inner portion on an inner portion of a top surface of the light emitting structure; and an electrode under the light emitting structure, wherein the inner portion of the electrode layer is protruded to the light emitting structure relative to the outer portion of the electrode layer, and wherein a portion of the insulating layer surrounds a portion of the light emitting structure. | 03-07-2013 |
20130200418 | SEMICONDUCTOR LIGHT EMITTING DEVICE - Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer. An electrode is on a bottom surface of the light emitting structure and an electrode layer and a conductive support member are disposed on the top surface of the light emitting structure. A recess is recessed from a top surface of the light emitting structure. A transmittive layer is between the light emitting structure and the electrode layer. The transmittive layer includes a first portion having a protrusion disposed in the recess. | 08-08-2013 |
20130228814 | SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR FABRICATING THE SAME - A semiconductor light-emitting device is provided. The semiconductor light-emitting device may include a light-emitting structure, an electrode, an ohmic layer, an electrode layer, an adhesion layer, and a channel layer. The light-emitting structure may include a compound semiconductor layer. The electrode may be disposed on the light-emitting structure. The ohmic layer may be disposed under the light-emitting structure. The electrode layer may include a reflective metal under the ohmic layer. The adhesion layer may be disposed under the electrode layer. The channel layer may be disposed along a bottom edge of the light-emitting structure. | 09-05-2013 |
20140077244 | SEMICONDUCTOR LIGHT EMITTING DEVICE - Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer. An electrode is on a bottom surface of the light emitting structure and an electrode layer and a conductive support member are disposed on the top surface of the light emitting structure. A recess is recessed from a top surface of the light emitting structure. A transmittive layer is between the light emitting structure and the electrode layer. The transmittive layer includes a first portion having a protrusion disposed in the recess. | 03-20-2014 |
20140217418 | SEMICONDUCTOR LIGHT EMITTING DEVICE HAVING ROUGHNESS LAYER - A semiconductor light emitting device is provided, including a substrate, a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer that includes a top surface and a bottom surface. The device includes a first roughness layer having a random horn shape and formed with irregular intervals, a second roughness layer, and at least one of a first AlGaN based semiconductor layer and a second AlGaN based semiconductor layer. The second conductive semiconductor layer includes a plurality of apexes on the top surface, where the distance between at least two apexes is of about 0.3 μm to about 1.0 μm. The second roughness layer includes a lower surface having a shape corresponding to the top surface of the second conductive semiconductor layer. The second roughness layer includes an upper surface having a shape corresponding to a top surface of the first roughness layer. | 08-07-2014 |
20140306264 | SEMICONDUCTOR LIGHT EMITTING DEVICE - Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer, a conductive support member disposed under the second conductive semiconductor layer, an insulating layer disposed between the second conductive semiconductor layer and the conductive support member, and a stepped conductive layer disposed between the second conductive semiconductor layer and the conductive support member. The stepped conductive layer includes a lower parts and an upper parts. The upper parts are directly contacted with the second conductive semiconductor layer. The lower parts are disposed between the insulating layer and the conductive support member. The insulating layer is laterally disposed between the plurality of upper parts. | 10-16-2014 |
20140332836 | SEMICONDUCTOR LIGHT EMITTING DEVICE - Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes a plurality of compound semiconductor layers including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer; a pad on the plurality of compound semiconductor layers; an electrode layer under the plurality of compound semiconductor layers; and a supporting member disposed under the plurality of compound semiconductor layers and corresponding to the pad. | 11-13-2014 |