Runnion
Ed Runnion, Santa Clara, CA US
Patent application number | Description | Published |
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20100027350 | FLASH MEMORY PROGRAMMING AND VERIFICATION WITH REDUCED LEAKAGE CURRENT - A flash memory system configured in accordance with an example embodiment of the invention employs a virtual ground array architecture. During programming operations, target memory cells are biased with a positive source bias voltage to reduce or eliminate leakage current that might otherwise conduct through the target memory cells. A positive source bias voltage may also be applied to target memory cells during verification operations (program verify, soft program verify, erase verify) to reduce or eliminate leakage current that might otherwise introduce errors in the verification operations. | 02-04-2010 |
Edward Franklin Runnion, San Jose, CA US
Patent application number | Description | Published |
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20100128521 | APPLYING NEGATIVE GATE VOLTAGE TO WORDLINES ADJACENT TO WORDLINE ASSOCIATED WITH READ OR VERIFY TO REDUCE ADJACENT WORDLINE DISTURB - Systems, methods, and devices that facilitate applying a predefined negative gate voltage to wordlines adjacent to a selected wordline associated with a memory cell selected during a read or verify operation to facilitate reducing adjacent wordline disturb are presented. A memory component can comprise an optimized operation component that can apply a predefined negative gate voltage to wordlines adjacent to a selected wordline associated with a memory cell selected for a read or verify operation, based at least in part on predefined operation criteria, to facilitate reducing adjacent wordline disturb in the selected memory cell to facilitate reducing a shift in the voltage threshold and maintain a desired operation window. The optimized operation component optionally can include an evaluator component that can facilitate determining whether a negative gate voltage applied to adjacent wordlines is to be adjusted to facilitate reducing adjacent wordline disturb below a predetermined threshold amount. | 05-27-2010 |
Edward Franklin Runnion, Santa Clara, CA US
Patent application number | Description | Published |
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20090154251 | ALGORITHM FOR CHARGE LOSS REDUCTION AND Vt DISTRIBUTION IMPROVEMENT - Methods and systems for accurately programming or erasing one or more memory cells on a selected wordline of a memory device are provided. In one embodiment, the memory device comprises a memory array, a threshold voltage measuring component configured to measure a threshold voltage of each memory cell on the selected wordline of the memory array, and an average threshold voltage determining component configured to determine an average threshold voltage result uniquely associated with the selected wordline, based on the measured threshold voltages. The memory device is configured to program one or more of the memory cells to a predefined program level relative to the determined average threshold voltage, or to erase memory cells of the selected wordline to the determined average threshold voltage. The method is particularly useful for multi-level flash memory cells to reduce charge loss while improving data reliability and Vt distributions of the programmed element states. | 06-18-2009 |
Ross I. Runnion, Boston, MA US
Patent application number | Description | Published |
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20090194125 | ULTRASOUND HAIR TREATMENT - The present invention relates to methods for the ultrasound enhancement of hair treatments, and to compositions and kits relating to said method. The invention further relates to ultrasonic devices for use in the methods. | 08-06-2009 |