Hitoshi Ito
Hitoshi Ito, Yokkaichi-Shi JP
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20100096682 | NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURING THE SAME - A non-volatile semiconductor storage device has a memory string including a plurality of electrically rewritable memory cells connected in series. The non-volatile semiconductor storage device also has a protruding layer formed to protrude upward with respect to a substrate. The memory string includes: a plurality of first conductive layers laminated on the substrate; a first semiconductor layer formed to penetrate the plurality of first conductive layers; and an electric charge storage layer formed between the first conductive layers and the first semiconductor layer, and configured to be able to store electric charges. Each of the plurality of first conductive layers includes: a bottom portion extending in parallel to the substrate; and a side portion extending upward with respect to the substrate along the protruding layer at the bottom portion. The protruding layer has a width in a first direction parallel to the substrate that is less than or equal to its length in a lamination direction. | 04-22-2010 |
20120032246 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A nonvolatile semiconductor memory device according to an embodiment includes a semiconductor substrate, a memory cell transistor formed in a memory cell region, and a field-effect transistor formed in a peripheral circuit region. The memory cell transistor includes: a floating gate electrode; a first inter-electrode insulating film; and a control gate electrode. The field-effect transistor includes: a lower gate electrode; a second inter-electrode insulating film having an opening; and an upper gate electrode electrically connected to the lower gate electrode via the opening. The control gate electrode and the upper gate electrode are formed by a plurality of conductive films that are stacked. The control gate electrode and the upper gate electrode include a barrier film formed in one of interfaces between the stacked conductive films and configured to suppress diffusion of metal atoms. The control gate electrode and the upper gate electrode have a part that is silicided. | 02-09-2012 |
Hitoshi Ito, Ibi-Gun JP
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20090053459 | CONDUCTIVE CONNECTING PIN AND PACKAGE SUBSTRATE - A package substrate | 02-26-2009 |
20090154131 | CONDUCTIVE CONNECTING PIN AND PACKAGE SUBSTRATE - A package substrate | 06-18-2009 |
20090314537 | CONDUCTIVE CONNECTING PIN AND PACKAGE SUBSTRATE - A package substrate including an outermost interlayer resin insulating layer, a pad structure formed on the outermost interlayer resin insulating layer, a conductive connecting pin for establishing an electrical connection with another substrate, the conductive connecting pin being secured to the pad structure via a solder, and via holes formed through the outermost interlayer resin insulating layer and for electrically connecting the pad structure to one or more conductive circuits formed below the outermost interlayer resin insulating layer, the via holes being positioned directly below the pad structure. | 12-24-2009 |
20100032200 | CONDUCTIVE CONNECTING PIN AND PACKAGE SUBSTRATE - A package substrate | 02-11-2010 |
Hitoshi Ito, Nagano-Shi JP
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20090294979 | SEMICONDUCTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - There is provided a method of manufacturing a semiconductor substrate. The method includes: (a) forming a wiring pattern on a substrate; (b) covering the wiring pattern with an insulating resin, thereby forming a first insulating layer; (c) forming a second insulating layer on the first insulating layer; (d) forming a plurality of grooves through the second insulating layer; (e) forming at least one via hole through the first and second insulating layers by irradiating at least one of the grooves with a laser beam; (f) forming a seed metal layer on an inner surface of the at least one via hole, inner surfaces of the grooves, and a surface of the second insulating layer; and (g) forming a plating layer in the at least one via hole and the grooves, by an electrolytic plating using the seed metal layer as a power feeding layer. | 12-03-2009 |
Hitoshi Ito, Yokohama-Shi JP
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20090212350 | NONVOLATILE SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURING THE SAME - A nonvolatile semiconductor storage device has a plurality of memory strings in which a plurality of electrically rewritable memory cells are connected in series. The memory string has a columnar semiconductor layer extending in a direction perpendicular to a substrate; a conductive layer formed so as to sandwich a charge storing layer in cooperation with the columnar semiconductor layer; and a metal layer formed so as to be in contact with the top face of the conductive layer. | 08-27-2009 |
Hitoshi Ito, Tokyo JP
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20080289943 | Circuit Breaker - A movable contacting device in a circuit breaker comprises: a crossbar linked with the opening/closing mechanism and carried so as to pivot cooperatively with the opening/closing mechanism; a movable contact arm engaged, so as to cooperational with the crossbar, with a shaft fitted into a mutually opposing recesses in the crossbar; and a movable contact arm support fixed to the case accomodating the opening/closing mechanism and having mutually opposing through-holes through which the shaft is passed; and the movable contact being configured so that the movable contact slides between surfaces of movable contact arm support having the mutually opposing through-holes; and the construction of a single-pole portion of the movable contact arm is constituted by arranging in parallel two movable contact arm members each having a movable contact at one end, and in a shaft-supporting portion at the other end, an elastic member is sandwiched between the two movable contact arm members. With this arrangement, circuit breakers provided with a movable contacting device that is small in size and stable in contact resistance can be made available. | 11-27-2008 |
Hitoshi Ito, Mie JP
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20130345137 | METHOD OF INHIBITING ANGIOGENESIS AND FOOD/BEVERAGE COMPOSITION FOR ANGIOGENESIS INHIBITION - A method of inhibiting angiogenesis by applying a protein polysaccharide of a (1→6)-β-D-glucan with a glucan:protein ratio of 55:43 [w/w], obtained by extracting with a 5 w % aqueous solution of sodium hydroxide a residue of extraction and removal of water-soluble polysaccharides from the | 12-26-2013 |
Hitoshi Ito, Kashiwara-Shi JP
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20150112049 | HIGH-PURITY ACID-FORM SOPHOROLIPID (SL) CONTAINING COMPOSITION AND PROCESS FOR PREPARING SAME - The present invention provides a high-purity acid-form sophorolipid (SL)-containing composition characterized by substantially not containing acetic acid. The high-purity acid-form SL-containing composition can be produced, for example, by the following method: | 04-23-2015 |