Patent application number | Description | Published |
20110188070 | DETECTION AND REPLACEMENT OF CONSUMABLE COMPONENTS OF COMPUTER PERIPHERALS - The present invention provides a technique for detecting and replacing consumable components, e.g., printer cartridges, of computer peripherals, e.g., printers. In an exemplary embodiment of the invention, a consumer loads a web page of a printer cartridge supplier. The web page includes a link to a server-based software application for identifying suitable replacement printer cartridges for the consumer. Upon download and activation by the consumer, the software scans the operating system of the consumer's local computer to determine the number and types of printer drivers installed on that computer. Generally, each printer driver is associated with a particular make and model of a peripheral printer connected to the consumer's computer. By determining the types of printer drivers existing on the consumer's computer, the software is able to identify the specific printers belonging to the consumer, and in turn facilitates the recommendation of suitable replacement cartridges and accessories for those printers. A list of those replacement cartridges and accessories is displayed to the consumer, from which the consumer may select and purchase. | 08-04-2011 |
20110314077 | IDENTIFICATION OF COMPATIBLE PRODUCTS FOR USE WITH MOBILE DEVICES - The present provides an automated technique for identifying compatible products and components of a mobile, wireless Internet enabled device. In an embodiment of the invention, a user of the wireless device requests a web page of an appropriate web site, e.g., a web site pertaining to that of a product and component retailer, which is facilitated by a web server. The web server obtains the respective user agent signature corresponding to the user's web browser. The server then analyzes the user agent signature to identify, among other things, the make and model of the user's device. By knowing the make and model of the user's device, the web server can then query a database to determine compatible products and components for use with the device. The web server then displays those compatible products and components and can facilitate the purchase of those products and components by the user. | 12-22-2011 |
Patent application number | Description | Published |
20090243819 | Smart legibility adjustment for vehicular display - A display system for a vehicle system includes at least one light sensor that detects a light condition, and a display member that displays an information message. The information message includes a background and an object that is displayed adjacent the background. The display system further includes a controller that changes legibility of the information message by changing each of the background and the object based on the light condition detected by the light sensor. A method of controlling the display system is also disclosed. | 10-01-2009 |
20090244017 | Haptic tracking remote control for driver information center system - A control interface system for a driver of a vehicle comprises a touchscreen, a control module, and a display. The touchscreen is located proximate to the driver of the vehicle and upon driver interaction therewith is operable to generate a sensor signal. The control module is adapted to receive the sensor signal from the touchscreen and is operable to initiate control of a vehicle function and to generate a haptic feedback signal in response thereto. The touchscreen is adapted to receive the haptic feedback signal from the control module and is operable to provide haptic feedback to the driver of the vehicle in response thereto. The display is embedded in an instrument panel of the vehicle and provides an indicia of the vehicle function controlled by the touchscreen and of driver interaction therewith. | 10-01-2009 |
20100250071 | DUAL FUNCTION TOUCH SWITCH WITH HAPTIC FEEDBACK - A control interface system is disclosed. The system comprises an input device that receives input of a user to control a plurality of systems of the vehicle and a plurality of dual function sensors interposed along a surface of said input device. Each of the dual function sensors includes a first circuit that is sensitive to contact of the user with the surface of said input device and a second circuit sensitive to pressure exerted upon the surface of the input device greater than a predetermined threshold. The dual function sensors generate a first signal when the first circuit senses the contact of the user and generate a second signal when the second circuit senses the pressure exerted upon the surface of the input device. The system further includes a processing unit which receives the first and second signals and controls the plurality of systems within the vehicle based upon the received signals. | 09-30-2010 |
20110301813 | CUSTOMIZABLE VIRTUAL LANE MARK DISPLAY - A method of displaying virtual lane markings relative to a vehicle position within a roadway lane may entail reading vehicle data such as speed into a vehicle control module, determining if the vehicle data is above a particular threshold, switching a virtual lane display switch, determining weather conditions, and displaying virtual lane markings upon a vehicle windshield based upon a result of determining weather conditions. Detecting actual lane markings on one or both of a left side of the roadway lane and a right side of the roadway lane may be accomplished with a vehicle-mounted camera. Moreover, determining whether a steering wheel has rotated a predetermined number of degrees may further play a role in displaying the virtual lane markings on a windshield of the vehicle. From a driver viewing perspective through a windshield, virtual lane markings may be displayed on the windshield to overlay actual lane markings. | 12-08-2011 |
20120044093 | COMBINED TIME-OF-FLIGHT AND IMAGE SENSOR SYSTEMS - An object detection system of a vehicle includes a time-of-flight (TOF) sensor that receives a reflected object detection signal at a second time based on an object detection signal transmitted at a first time. An image sensor generates an image signal including an image of a detected object. The image sensor is distinct from and adjacent to the TOF sensor. A TOF control module generates distance data based on the first time and the second time and determines whether at least a portion of a detected object is within a predetermined distance of the vehicle. An image control module generates image data based on the image signal. A detection control module correlates the distance data with the image data to generate a warning indicator when at least a portion of the detected object is within the predetermined distance of the vehicle. | 02-23-2012 |
20120174111 | METHOD TO DETERMINE DRIVER WORKLOAD FUNCTION AND USAGE OF DRIVER WORKLOAD FUNCTION FOR HUMAN-MACHINE INTERFACE PERFORMANCE ASSESSMENT - A method of objectively measuring a driver's ability to operate a motor vehicle user interface. The method includes objectively measuring the driver's ability to perform each one of a plurality of calibration tasks of various degrees of difficulty including an easy task, a medium task, and a difficult task; generating a scale with which to evaluate the driver's ability to operate the user interface, the scale customized for the driver based on the objective measurements of the driver's ability to perform each calibration task; objectively measuring the driver's ability to operate a function of the motor vehicle user interface; and objectively evaluating the driver's ability to operate the function of the motor vehicle user interface using the scale to determine if the user interface is appropriate for the driver. | 07-05-2012 |
20120253593 | SYSTEMS AND METHODS FOR HAPTIC FEEDBACK CONTROL IN A VEHICLE - A control system for a vehicle includes first and second modules. The first module receives input from an operator of the vehicle via an input device, wherein the operator input includes a change to an operating parameter of a vehicle system. The second module selectively adjusts a resistance of the input device based on the operator input and a predetermined threshold. A method for controlling a vehicle includes receiving input from an operator of the vehicle via an input device, wherein the operator input includes a change to an operating parameter of a vehicle system, and selectively adjusting a resistance of the input device based on the operator input and a predetermined threshold. | 10-04-2012 |
20140092025 | MULTIPLE-FORCE, DYNAMICALLY-ADJUSTED, 3-D TOUCH SURFACE WITH FEEDBACK FOR HUMAN MACHINE INTERFACE (HMI) - A control interface system for a vehicle includes an input module, a feedback module, and a system controller. The input module has a touchscreen and a control icon arranged thereon. The feedback module includes a pressure sensor in communication with the input module. The pressure sensor provides a sensor signal to the input module indicative of an applied force on the touchscreen. The system controller is in communication with the pressure sensor through the input module. The system controller provides at least one of a haptic feedback, an audible feedback, and a visual feedback, where the feedback is indicative of one of a selection mode, a slow change mode, and a fast change mode. | 04-03-2014 |
Patent application number | Description | Published |
20140264563 | Field Effect Transistor Devices with Protective Regions - A transistor device includes a first conductivity type drift layer, a second conductivity type first region in the drift layer, a body layer having the second conductivity type on the drift layer including the first region, a source layer on the body layer, and a body contact region that extends through the source layer and the body layer and into the first region. The transistor device further includes a trench through the source layer and the body layer and extending into the drift layer adjacent the first region. The trench has an inner sidewall facing away from the first region. A gate insulator is on the inner sidewall of the trench, and a gate contact is on the gate insulator. | 09-18-2014 |
20140264564 | Field Effect Transistor Devices with Buried Well Protection Regions - A method of forming a transistor device includes providing a drift layer having a first conductivity type, forming a first region in the drift layer, the first region having a second conductivity type that is opposite the first conductivity type, forming a body layer on the drift layer including the first region, forming a source layer on the body layer, forming a trench in the source layer and the body layer above the first region and extending into the first region, forming a gate insulator on the inner sidewall of the trench, and forming a gate contact on the gate insulator. | 09-18-2014 |
20140264579 | Field Effect Transistor Devices with Buried Well Regions and Epitaxial Layers - A method of forming a transistor device includes providing a drift layer having a first conductivity type and an upper surface, forming first regions in the drift layer and adjacent the upper surface, the first regions having a second conductivity type that is opposite the first conductivity type and being spaced apart from one another, forming a body layer on the drift layer including the source regions, forming spaced apart source regions in the body layer above respective ones of the first regions, forming a vertical conduction region in the body layer between the source regions, the vertical conduction region having the first conductivity type and defining channel regions in the body layer between the vertical conduction region and respective ones of the source regions, forming a gate insulator on the body layer, and forming a gate contact on the gate insulator. | 09-18-2014 |
20150021742 | Methods of Forming Junction Termination Extension Edge Terminations for High Power Semiconductor Devices and Related Semiconductor Devices - Methods of forming a power semiconductor device having an edge termination are provided in which the power semiconductor device that has a drift region of a first conductivity type is formed on a substrate. A junction termination extension is formed on the substrate adjacent the power semiconductor device, the junction termination extension including a plurality of junction termination zones that are doped with dopants having a second conductivity type. The junction termination zones have different effective doping concentrations. A dopant activation process is performed to activate at least some of the dopants in the junction termination zones. An electrical characteristic of the power semiconductor device is measured. Then, the junction termination extension is etched in order to reduce the effective doping concentration within the junction termination extension. | 01-22-2015 |
20150028350 | Controlled Ion Implantation Into Silicon Carbide Using Channeling And Devices Fabricated Using Controlled Ion Implantation Into Silicon Carbide Using Channeling - Methods of forming a semiconductor structure include the use of channeled implants into silicon carbide crystals. Some methods include providing a silicon carbide layer having a crystallographic axis, heating the silicon carbide layer to a temperature of about 300° C. or more, implanting dopant ions into the heated silicon carbide layer at an implant angle between a direction of implantation and the crystallographic axis of less than about 2°, and annealing the silicon carbide layer at a time-temperature product of less than about 30,000° C.-hours to activate the implanted ions. | 01-29-2015 |
20150041886 | VERTICAL POWER TRANSISTOR DEVICE - A power metal-oxide-semiconductor field-effect transistor (MOSFET) includes a substrate, a drift layer over the substrate, and a spreading layer over the drift layer. The spreading layer includes a pair of junction implants separated by a junction gate field effect (JFET) region. A gate oxide layer is on top of the spreading layer. The gate contact is on top of the gate oxide layer. Each one of the source contacts are on a portion of the spreading layer separate from the gate oxide layer and the gate contact. The drain contact is on the surface of the substrate opposite the drift layer. | 02-12-2015 |
20150048489 | EDGE TERMINATION TECHNIQUE FOR HIGH VOLTAGE POWER DEVICES - Embodiments of a semiconductor die having a semiconductor device implemented on the semiconductor die and an edge termination structure around a periphery of the semiconductor device and methods of fabricating the same are disclosed. In one embodiment, a semiconductor die includes a semiconductor device and an edge termination structure around a periphery of the semiconductor device, where the edge termination structure includes negative features (e.g., trenches and/or divots) that vary dose in a corresponding edge termination region to approximate a desired dose profile. In one embodiment, the desired dose profile is a substantially decreasing or substantially linearly decreasing dose from an edge of a main junction of the semiconductor device to an edge of the edge termination region. In this manner, electric field crowding at the edge of the main junction of the semiconductor device is substantially reduced, which in turn substantially improves a break-down voltage of the semiconductor device. | 02-19-2015 |
20150084062 | MONOLITHICALLY INTEGRATED VERTICAL POWER TRANSISTOR AND BYPASS DIODE - A vertical field-effect transistor (FET) device includes a monolithically integrated bypass diode connected between a source contact and a drain contact of the vertical FET device. According to one embodiment, the vertical FET device includes a pair of junction implants separated by a junction field-effect transistor (JFET) region. At least one of the junction implants of the vertical FET device includes a deep well region that is shared with the integrated bypass diode, such that the shared deep well region functions as both a source junction in the vertical FET device and a junction barrier region in the integrated bypass diode. The vertical FET device and the integrated bypass diode may include a substrate, a drift layer over the substrate, and a spreading layer over the drift layer, such that the junction implants of the vertical FET device are formed in the spreading layer. | 03-26-2015 |
20150084063 | SEMICONDUCTOR DEVICE WITH A CURRENT SPREADING LAYER - A semiconductor device includes a substrate, a drift layer over the substrate, a spreading layer over the drift layer, and a pair of junction implants in a surface of the spreading layer opposite the drift layer. An anode covers the surface of the spreading layer opposite the drift layer, and a cathode covers a surface of the substrate opposite the drift layer. By including the spreading layer, a better balance can be struck between the on state resistance of the semiconductor device and the peak electric field in the device, thereby improving the performance thereof. | 03-26-2015 |
20150084118 | SEMICONDUCTOR DEVICE INCLUDING A POWER TRANSISTOR DEVICE AND BYPASS DIODE - A semiconductor device includes a vertical FET device and a Schottky bypass diode. The vertical FET device includes a gate contact, a source contact, and a drain contact. The gate contact and the source contact are separated from the drain contact by at least a drift layer. The Schottky bypass diode is coupled between the source contact and the drain contact and monolithically integrated adjacent to the vertical FET device such that a voltage placed between the source contact and the drain contact is distributed throughout the drift layer by the Schottky bypass diode in such a way that a voltage across each one of a plurality of P-N junctions formed between the source contact and the drain contact within the vertical FET device is prevented from exceeding a barrier voltage of the respective P-N junction. | 03-26-2015 |
20150084119 | LAYOUT CONFIGURATIONS FOR INTEGRATING SCHOTTKY CONTACTS INTO A POWER TRANSISTOR DEVICE - A semiconductor device includes a vertical field-effect-transistor (FET) and a bypass diode. The vertical FET device includes a substrate, a drift layer formed over the substrate, a gate contact and a plurality of source contacts located on a first surface of the drift layer opposite the substrate, a drain contact located on a surface of the substrate opposite the drift layer, and a plurality of junction implants, each of the plurality of junction implants laterally separated from one another on the surface of the drift layer opposite the substrate and extending downward toward the substrate. Each of the one or more bypass diodes are formed by placing a Schottky metal contact on the first surface of the drift layer, such that each Schottky metal contact runs between two of the plurality of junction implants. | 03-26-2015 |
20150084125 | MONOLITHICALLY INTEGRATED VERTICAL POWER TRANSISTOR AND BYPASS DIODE - A vertical field-effect transistor (FET) device includes a monolithically integrated bypass diode connected between a source contact and a drain contact of the vertical FET device. According to one embodiment, the vertical FET device includes a pair of junction implants separated by a junction field-effect transistor (JFET) region. At least one of the junction implants of the vertical FET device includes a deep well region that is shared with the integrated bypass diode, such that the shared deep well region functions as both a source junction in the vertical FET device and a junction barrier region in the integrated bypass diode. The vertical FET device and the integrated bypass diode may include a substrate, a drift layer over the substrate, and a spreading layer over the drift layer, such that the junction implants of the vertical FET device are formed in the spreading layer. | 03-26-2015 |