Patent application number | Description | Published |
20090152635 | THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING A DISPLAY PANEL - Embodiments of the present invention relate to a thin film transistor and a manufacturing method of a display panel, and include forming a gate line including a gate electrode on a substrate, forming a gate insulating layer on the gate electrode, forming an intrinsic semiconductor on the gate insulating layer, forming an extrinsic semiconductor on the intrinsic semiconductor, forming a data line including a source electrode and a drain electrode on the extrinsic semiconductor, and plasma-treating a portion of the extrinsic semiconductor between the source electrode and the drain electrode to form a protection member and ohmic contacts on respective sides of the protection member. Accordingly, the process for etching the extrinsic semiconductor and forming an inorganic insulating layer for protecting the intrinsic semiconductor may be omitted such that the manufacturing process of the display panel may be simplified, manufacturing cost may be reduced, and productivity may be improved. | 06-18-2009 |
20100123861 | LIQUID CRYSTAL DISPLAY AND METHOD FOR MANUFACTURING THE SAME - A liquid crystal display includes; a first substrate, a gate line and a data line disposed on the first substrate, a color filter including protrusions and depressions aligned with the data line, the color filter being disposed on the data line, a pixel electrode disposed on the color filter, a second substrate facing the first substrate, a common electrode disposed on the second substrate, and a liquid crystal layer interposed between the first substrate and the second substrate. | 05-20-2010 |
20100127961 | THIN FILM TRANSISTOR ARRAY PANEL AND METHOD OF MANUFACTURING THE SAME - A thin film transistor array panel including a substrate, gate lines formed on the substrate and extending in a first direction, data lines formed on the substrate and extending in a second direction, wherein the data lines cross and are insulated from the gate lines, and thin film transistors each with a control terminal, an input terminal, and an output terminal. The control and input terminals of the thin film transistor are connected to the gate and data lines. A barrier rib is formed on the gate lines, the data lines, and the thin film transistors. The barrier rib has the same pattern as the gate lines, the data lines, and the thin film transistors. Color filters fill regions demarcated by the barrier rib. Pixel electrodes are formed on the color filters. The output terminal of the thin film transistor has an opening, and a portion of the barrier rib formed on the output terminal has an output opening. The barrier rib output terminal portion has the same pattern as the output terminal. With the thin film transistor array panel, a barrier rib for forming contact holes is formed through exposing a positive photosensitive organic layer formed on a passivation layer to light from the backside of a substrate by using drain electrodes with openings as a light blocking film. | 05-27-2010 |
20110012115 | DISPLAY DEVICE WITH IMPROVED SENSING MECHANISM - A display panel that includes: a substrate, a sensing transistor disposed on the substrate, and a readout transistor connected to the sensing transistor and transmitting a detecting signal is presented. The sensing transistor includes a semiconductor layer disposed on the upper substrate, a source electrode and a drain electrode disposed on the semiconductor layer, and a gate electrode overlapping the semiconductor layer on the source electrode and the drain electrode. Accordingly, in a display device and a manufacturing method thereof, an infrared sensing transistor, a visible light sensing transistor, and a readout transistor are simultaneously formed with a top gate structure such that the number of manufacturing processes and the manufacturing cost may be reduced. | 01-20-2011 |
20110032461 | VISIBLE-LIGHT BLOCKING MEMBER, INFRARED SENSOR INCLUDING THE VISIBLE-LIGHT BLOCKING MEMBER, AND LIQUID CRYSTAL DISPLAY DEVICE INCLUDING THE INFRARED SENSOR - In a visible-light blocking member, an infrared sensor including the visible-light blocking member, and a liquid crystal display including the infrared sensor, a visible-light blocking member is a structure including amorphous germanium or a compound of amorphous germanium and has higher transmittance for a wavelength of an infrared ray region than for a wavelength of a visible light region. Accordingly, sensitivity to infrared rays may be increased by applying the visible-light blocking member to the infrared sensor. | 02-10-2011 |
20110057189 | DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - A display device includes a lower panel including a lower substrate and a pixel transistor formed on the lower substrate; and an upper panel facing the lower panel, and including an upper substrate, a sensing transistor formed on the upper substrate, and a readout transistor connected to the sensing transistor and transmitting a signal. The readout transistor includes a first lower gate electrode formed on the upper substrate, a first semiconductor layer formed on the first lower gate electrode and overlaps the first gate electrode, and a first source electrode and a first drain electrode disposed on the first semiconductor layer. The sensing transistor includes a light blocking film disposed on the upper substrate, a second lower gate electrode contacting the light blocking film on the light blocking film, a second semiconductor layer overlapping the light blocking film on the second lower gate electrode, a second source electrode and a second drain electrode formed on the second semiconductor layer, and a second upper gate electrode overlapping the second semiconductor layer on the second source electrode and the second drain electrode. | 03-10-2011 |
20110109609 | DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - A touch sensitive display device utilizing infrared ray sensing transistors. The transistors are configured, and comprise specified materials, to allow them to be formed with fewer photolithography processes, reducing cost and manufacturing time. | 05-12-2011 |
20110159622 | THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING A DISPLAY PANEL - Embodiments of the present invention relate to a thin film transistor and a manufacturing method of a display panel, and include forming a gate line including a gate electrode on a substrate, forming a gate insulating layer on the gate electrode, forming an intrinsic semiconductor on the gate insulating layer, forming an extrinsic semiconductor on the intrinsic semiconductor, forming a data line including a source electrode and a drain electrode on the extrinsic semiconductor, and plasma-treating a portion of the extrinsic semiconductor between the source electrode and the drain electrode to form a protection member and ohmic contacts on respective sides of the protection member. Accordingly, the process for etching the extrinsic semiconductor and forming an inorganic insulating layer for protecting the intrinsic semiconductor may be omitted such that the manufacturing process of the display panel may be simplified, manufacturing cost may be reduced, and productivity may be improved. | 06-30-2011 |
20110261040 | INFORMATION DETECTION DISPLAY - An information detection device includes: a plurality of light sensing units each configured to detect light; a plurality of sensor scanning drivers each configured to apply sensor scanning signals to the light sensing units; a sensing signal processor configured to receive position information detected by the light sensing units; a plurality of bias applying units each configured to apply bias voltages to the light sensing units; wherein each bias applying unit applies a different polarity of bias voltage. | 10-27-2011 |
20120037912 | VISIBLE SENSING TRANSISTOR, DISPLAY PANEL AND MANUFACTURING METHOD THEREOF - A display device includes an infrared sensing transistor and a visible sensing transistor. The visible sensing transistor includes a semiconductor on a substrate; an ohmic contact on the semiconductor; an etch stopping layer on the ohmic contact; a source electrode and a drain electrode on the etch stopping layer; a passivation layer on the source electrode and the drain electrode; and a gate electrode on the passivation layer. The etch stopping layer may be composed of the same material as the source electrode and the drain electrode. The infrared sensing transistor is similar to the visible sensing transistor except the etch stopping layer is absent. | 02-16-2012 |
20120138929 | IR SENSING TRANSISTOR AND MANUFACTURING METHOD OF DISPLAY DEVICE INCLUDING THE SAME - An IR sensing transistor according to an exemplary embodiment of the present invention includes: a light blocking layer formed on a substrate; a gate insulating layer formed on the light blocking layer; a semiconductor formed on the gate insulating layer; a pair of ohmic contact members formed on the semiconductor; a source electrode and a drain electrode formed on respective ones of the ohmic contact members; a passivation layer formed on the source electrode and the drain electrode; and a gate electrode formed on the passivation layer, wherein substantially all of the gate insulating layer lies on the light blocking layer. | 06-07-2012 |
20120228505 | OPTICAL SENSOR - An optical sensor includes a visible light sensor includes a visible light sensing transistor and an infrared light sensor includes an infrared light sensing transistor, wherein the visible light sensing transistor receives a first driving voltage through a first driving voltage line, the infrared light sensing transistor receives a second driving voltage through a second driving voltage line, and the visible light sensing transistor and the infrared light sensing transistor receive a reference voltage through a reference voltage line. | 09-13-2012 |
20120248452 | OPTICAL SENSOR - An optical sensor preventing damage to a semiconductor layer, and preventing a disconnection and a short circuit of a source electrode and a drain electrode, and a manufacturing method of the optical sensor is provided. The optical sensor includes: a substrate; an infrared ray sensing thin film transistor including a first semiconductor layer disposed on the substrate; a visible ray sensing thin film transistor including a second semiconductor layer disposed on the substrate; a switching thin film transistor including a third semiconductor layer disposed on the substrate; and a semiconductor passivation layer enclosing an upper surface and a side surface of an end portion of at least one of the first semiconductor layer, the second semiconductor layer, and the third semiconductor layer. | 10-04-2012 |
20130234142 | VISIBLE SENSING TRANSISTOR, DISPLAY PANEL AND MANUFACTURING METHOD THEREOF - A display device includes an infrared sensing transistor and a visible sensing transistor. The visible sensing transistor includes a semiconductor on a substrate; an ohmic contact on the semiconductor; an etch stopping layer on the ohmic contact; a source electrode and a drain electrode on the etch stopping layer; a passivation layer on the source electrode and the drain electrode; and a gate electrode on the passivation layer. The etch stopping layer may be composed of the same material as the source electrode and the drain electrode. The infrared sensing transistor is similar to the visible sensing transistor except the etch stopping layer is absent. | 09-12-2013 |
20140147947 | Thin Film Transistor and Method for Manufacturing a Display Panel - Embodiments of the present invention relate to a thin film transistor and a manufacturing method of a display panel, and include forming a gate line including a gate electrode on a substrate, forming a gate insulating layer on the gate electrode, forming an intrinsic semiconductor on the gate insulating layer, forming an extrinsic semiconductor on the intrinsic semiconductor, forming a data line including a source electrode and a drain electrode on the extrinsic semiconductor, and plasma-treating a portion of the extrinsic semiconductor between the source electrode and the drain electrode to form a protection member and ohmic contacts on respective sides of the protection member. Accordingly, the process for etching the extrinsic semiconductor and forming an inorganic insulating layer for protecting the intrinsic semiconductor may be omitted such that the manufacturing process of the display panel may be simplified, manufacturing cost may be reduced, and productivity may be improved. | 05-29-2014 |
20140184942 | DISPLAY HAVING TOUCH SENSING FUNCTION - A panel for a display device is provided. The panel includes a first substrate, a touch sensing circuit formed on the first substrate, the touch sensing circuit including at least one sensing thin film transistor and a connection wire, and a shielding electrode formed covering at least a portion of the sensing thin film transistor and the connection wire. | 07-03-2014 |
20140211103 | DISPLAY DEVICE - Touch-related information which cannot be acquired by the naked eye (dubbed here as sub-optical pattern information) has its corresponding sub-optical patterns respectively positioned within the aperture areas of respective domains such that the displayed image, as viewed from different viewing angles is not adversely affected by the embedded sub-optical patterns. One type of touch-related information which can be conveyed is that of touch location of a sub-optical pattern sensing pen positioned over one or more of the sub-optical patterns. | 07-31-2014 |
20140218644 | VISIBLE SENSING TRANSISTOR, DISPLAY PANEL AND MANUFACTURING METHOD THEREOF - A display device includes an infrared sensing transistor and a visible sensing transistor. The visible sensing transistor includes a semiconductor on a substrate; an ohmic contact on the semiconductor; an etch stopping layer on the ohmic contact; a source electrode and a drain electrode on the etch stopping layer; a passivation layer on the source electrode and the drain electrode; and a gate electrode on the passivation layer. The etch stopping layer may be composed of the same material as the source electrode and the drain electrode. The infrared sensing transistor is similar to the visible sensing transistor except the etch stopping layer is absent. | 08-07-2014 |
20140287542 | IR SENSING TRANSISTOR AND MANUFACTURING METHOD OF DISPLAY DEVICE INCLUDING THE SAME - An IR sensing transistor according to an exemplary embodiment of the present invention includes: a light blocking layer formed on a substrate; a gate insulating layer formed on the light blocking layer; a semiconductor formed on the gate insulating layer; a pair of ohmic contact members formed on the semiconductor; a source electrode and a drain electrode formed on respective ones of the ohmic contact members; a passivation layer formed on the source electrode and the drain electrode; and a gate electrode formed on the passivation layer, wherein substantially all of the gate insulating layer lies on the light blocking layer. | 09-25-2014 |
Patent application number | Description | Published |
20090152554 | THIN FILM TRANSISTOR, DISPLAY DEVICE INCLUDING THE SAME AND MANUFACTURING METHOD THEREOF - A thin film transistor, a display device, and a manufacturing method thereof. The thin film transistor includes a control electrode, a semiconductor overlapping the control electrode, and an input electrode and an output electrode disposed on or under the semiconductor and opposite to each other. The semiconductor includes a first portion disposed between the input electrode and the output electrode and having a first crystallinity, and a second portion connected with the first portion, which overlaps the input electrode or the output electrode, and having a second crystallinity. The first crystallinity is higher than the second crystallinity. | 06-18-2009 |
20090174690 | THIN FILM TRANSISTOR, DISPLAY DEVICE INCLUDING THE SAME, AND METHOD FOR MANUFACTURING THE SAME - A display device and a manufacturing method thereof, include a first thin film transistor including a first control electrode, a first semiconductor disposed on the first control electrode, and a first input electrode and a first output electrode opposite to each other on the first semiconductor; and a second thin film transistor including a second control electrode, a second semiconductor disposed on the second control electrode, and a second input electrode and a second output electrode opposite to each other on the second semiconductor, wherein the first semiconductor includes a first lower semiconductor including polysilicon, and a first upper semiconductor disposed on the first lower semiconductor, the first upper semiconductor including amorphous silicon. | 07-09-2009 |
20090272980 | THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD OF THE SAME - A semiconductor including a channel, a data line including a source electrode, a drain electrode, and a pixel area definition member is formed on a gate insulating layer, and a passivation layer is deposited on the data line, the pixel area definition member, and the channel of the semiconductor. A first photosensitive film pattern including a first portion disposed at a position corresponding to the drain electrode and a second portion that is thicker than the first portion, and exposing the passivation layer at a position corresponding to the pixel area definition member, is formed on the passivation layer, the passivation layer that is exposed by using the first photosensitive film pattern as an etch mask is etched, and a second photosensitive film pattern is formed by etching the whole surface of the first photosensitive film pattern to remove the first portion. The pixel area definition member exposed by the passivation layer is etched, and the passivation layer exposed by the removal of the first portion and the semiconductor exposed by the removal of the pixel area definition member are etched. A conductor layer for a pixel electrode is formed, and the second photosensitive film pattern is removed to form the pixel electrode. | 11-05-2009 |
20100066655 | THIN FILM TRANSISTOR PANEL AND LIQUID CRYSTAL DISPLAY USING THE SAME - An LCD device includes a transmissive LCD panel assembly, a backlight assembly for supplying light to the LCD panel assembly, and a selective reflection film provided between the backlight assembly and the LCD panel assembly. A display region of the LCD has a low-resolution area and a high-resolution area, and a pixel formed in the low-resolution area that is larger than a pixel formed in the high-resolution area. | 03-18-2010 |
20100302495 | DISPLAY APPARATUS INCLUDING SIGNAL LINES ARRANGED FOR CURING A SEAL LINE - A display apparatus includes a display substrate, an opposite substrate, a seal line, a driver chip, a gate insulating layer disposed on the display substrate, a first signal line disposed on a first side of the gate insulating layer, and a second signal line disposed on a second side of the gate insulating layer, wherein portions of the first signal line and the second signal line overlap each other along at least a portion of the seal line. | 12-02-2010 |
20110012123 | THIN FILM TRANSISTOR SUBSTRATE AND FABRICATING METHOD THEREOF - A thin film transistor substrate and fabricating method thereof by which the size of the thin film transistor substrate is reduced by constructing data signal supply lines, each of which supplies a pixel data voltage to a data line, with different metal lines, respectively includes gate and data lines crossing each other on a substrate, with a gate insulating layer disposed therebetween, a thin film transistor formed on each intersection between the gate and data lines, a display area on which a pixel electrode connected to the thin film transistor is formed, a first data signal supply line comprising a first conductive layer connected to the data line in a non-display area located at a periphery of the display area, and a second data signal supply line alternating with the first data signal supply line, with the gate insulating layer disposed therebetween, the second data signal supply line comprising a second conductive layer connected to the data line. | 01-20-2011 |
20110133198 | THIN FILM TRANSISTOR, DISPLAY DEVICE INCLUDING THE SAME AND MANUFACTURING METHOD THEREOF - A thin film transistor, a display device, and a manufacturing method thereof. The thin film transistor includes a control electrode, a semiconductor overlapping the control electrode, and an input electrode and an output electrode disposed on or under the semiconductor and opposite to each other. The semiconductor includes a first portion disposed between the input electrode and the output electrode and having a first crystallinity, and a second portion connected with the first portion, which overlaps the input electrode or the output electrode, and having a second crystallinity. The first crystallinity is higher than the second crystallinity. | 06-09-2011 |
20130099262 | LIQUID CRYSTAL DISPLAY - A liquid crystal display according to an exemplary embodiment of the present invention includes a substrate, a plurality of pixels arranged in a matrix on the substrate where each pixel includes a switching element, a plurality of gate lines that are connected to the switching elements and extend in a row direction, and a gate driver that is connected to the gate lines and is formed on the substrate as an integrated circuit. In the liquid crystal display, the gate driver includes a first region and a second region that is not aligned with the first region. | 04-25-2013 |
20130260498 | THIN FILM TRANSISTOR HAVING SEMICONDUCTOR WITH DIFFERENT CRYSTALLINITIES AND MANUFACTURING METHOD THEREOF - A thin film transistor, a display device, and a manufacturing method thereof. The thin film transistor includes a control electrode, a semiconductor overlapping the control electrode, and an input electrode and an output electrode disposed on or under the semiconductor and opposite to each other. The semiconductor includes a first portion disposed between the input electrode and the output electrode and having a first crystallinity, and a second portion connected with the first portion, which overlaps the input electrode or the output electrode, and having a second crystallinity. The first crystallinity is higher than the second crystallinity. | 10-03-2013 |
20140132876 | LIQUID CRYSTAL DISPLAY - A liquid crystal display according to an exemplary embodiment of the present invention includes a substrate, a plurality of pixels arranged in a matrix on the substrate where each pixel includes a switching element, a plurality of gate lines that are connected to the switching elements and extend in a row direction, and a gate driver that is connected to the gate lines and is formed on the substrate as an integrated circuit. In the liquid crystal display, the gate driver includes a first region and a second region that is not aligned with the first region. | 05-15-2014 |