Patent application number | Description | Published |
20090149555 | METHOD FOR PREPARING POLYHYDROXYALKANOATES, POLYMERS THUS OBTAINED, COMPOSITIONS COMPRISING THEM AND THEIR USES - Method for preparing a polyhydroxyalkanoate (PHA) polymer by ring-opening polymerization of a lactone such as β-butyrolactone, that is preferably racemic, in which the polymerization is carried out in the presence of an initiator of formula (II): | 06-11-2009 |
20100029472 | Fluorinated Alkoxy-Imino Catalyst Components - This invention relates to fluorinated alkoxy-imino metallic complexes and their use in catalyst systems for the polymerisation or oligomerisation of ethylene and alpha-olefins. | 02-04-2010 |
20100144515 | FLUORINATED DIALKOXY-DIIMINO CATALYST COMPONENTS - This invention relates to the fluorinated dialkoxy-diimine metal complexes and their use in catalyst system for the polymerisation or oligomerisation of ethylene and alpha-olefins. | 06-10-2010 |
20110092664 | Monomers Issued from Renewable Resources and Process for Polymerising Them - This invention relates to the synthesis of polycarbonates prepared from carbonate monomers derived from the biomass in the presence of a system comprising an organometallic transfer agent and alcohol. It also relates to the polymers resulting from these cyclic compounds. | 04-21-2011 |
20110098424 | Preparation of styrene homopolymers and styrene-ethlyene copolymers - The present invention discloses copolymers of styrene and ethylene with highly syndiotactic styrene blocks prepared with of a catalyst system comprising a metallocene catalyst component of the general formula (I): (Flu-R″—C p)M(n | 04-28-2011 |
20110105704 | Sterically Emcumbered Bidentate and Tridentate Naphthoxy-Imine Metallic Complexes - The present invention discloses post-metallocene complexes based on sterically encumbered bi- and tri-dentate naphthoxy-imine ligands. It also relates to the use of such post-metallocene complexes in the oligomerisation of ethylene to selectively prepare vinyl-end capped linear alpha-olefins. | 05-05-2011 |
20110112273 | Group 3 Post-Metallocene Complexes Based on Bis(Naphthoxy)Pyridine and Bis(Naphthoxy)ThioPhene Ligands for the Ring-Opening Polymerisation of Polar Cyclic Monomers - The present invention relates to the use of group 3 post-metallocene complexes based on sterically encumbered bis(naphthoxy)pyridine and bis(naphthoxy)thiophene ligands in the ring-opening polymerisation of polar monomers such as, for examples, lactones, lactides, cyclic carbonates. | 05-12-2011 |
20110144291 | Post-Metallocene Complexes Based on Bis(Naphtoxy)Pyridine and Bis(Naphtoxy)Thiophene Ligands for the Polymerisation of Ethylene and Alpha-Olefins - The present invention relates to the field of group 4 post-metallocene complexes based on sterically encumbered bis(naphtoxy)pyridine and bis(naphtoxy)thiophene ligands. It also relates to the use of such post-metallocene complexes in the polymerisation of ethylene and alpha-olefins. | 06-16-2011 |
20110224373 | PROCESS TO MAKE A DIBLOCK COPOLYMER HAVING A MONOVINYLAROMATIC POLYMER BLOCK - The present invention is a process to make a composition comprising a block copolymer A-B and optionally a monovinylaromatic polymer, said process comprising:
| 09-15-2011 |
20110251400 | Preparation of Dphenyl-Bridged Substituted Cyclopentadienyil-Fluorenyl Ligands - The present invention discloses efficient methods for preparing substituted cyclopentadienyl-fluorenyl catalyst components having a diphenyl bridge. | 10-13-2011 |
20110312489 | Fluorinated Alkoxy-Imino Catalyst Components - This invention relates to fluorinated alkoxy-imino metallic complexes and their use in catalyst systems for the polymerisation or oligomerisation of ethylene and alpha-olefins. | 12-22-2011 |
20120289670 | Fluorinated Alkoxy-Imino Catalyst Components - This invention relates to fluorinated alkoxy-imino metallic complexes and their use in catalyst systems for the polymerisation or oligomerisation of ethylene and alpha-olefins. | 11-15-2012 |
20130144027 | ISOCYANATE-FREE METHOD FOR PREPARING POLY(CARBONATE-URETHANE) OR POLY(ESTER-URETHANE) - The present invention discloses a method for preparing polycarbonate-urethane) or poly(ester-urethane) without isocyanate | 06-06-2013 |
20130237683 | Monomers Issued From Renewable Resources and Process for Polymerising Them - This invention relates to the synthesis of polycarbonates prepared from carbonate monomers derived from the biomass in the presence of a system comprising an organometallic transfer agent and alcohol. It also relates to the polymers resulting from these cyclic compounds. | 09-12-2013 |
20130274422 | POLYCARBONATES AS NUCLEATING AGENTS FOR POLYLACTIDES - The present invention discloses the use of polycarbonate to increase the crystallisation rate of polylactides while maintaining its the mechanical properties. | 10-17-2013 |
20130281681 | Group 3 Post-Metallocene Complexes Based on Bis(Naphthoxy)Pyridine and Bis(Naphthoxy)ThioPhene Ligands for the Ring-Opening Polymerisation of Polar Cyclic Monomers - The present invention relates to the use of group 3 post-metallocene complexes based on sterically encumbered bis(naphthoxy)pyridine and bis(naphthoxy)thiophene ligands in the ring-opening polymerisation of polar monomers such as, for examples, lactones, lactides, cyclic carbonates. | 10-24-2013 |
20140148558 | ONE-STEP, ONE-POT PROCESS FOR PREPARING MULTIBLOCK AND GRADIENT COPOLYMER - The present invention relates to the field of tailored di-, tri- and multi-block as well as gradient polyesters/polycarbonates copolymers prepared by introducing monomers simultaneously in the reaction medium in the presence of an organometallic, metal salt or organic catalyst. | 05-29-2014 |
20140323684 | AMINO ACID PREPARATION METHOD COMPRISING A STEP OF HYDROFORMYLATION OF AN UNSATURATED FATTY NITRILE - A method for synthesizing a ω-amino acid compound having formula HOOC—R′—CH | 10-30-2014 |
Patent application number | Description | Published |
20090174503 | INTEGRABLE TUNABLE FILTER CIRCUIT COMPRISING A SET OF BAW RESONATORS - A tunable filter circuit having inputs IN | 07-09-2009 |
20110078894 | METHOD FOR MANUFACTURING MONOLITHIC OSCILLATOR WITH BAW RESONATORS - A method of adjustment on manufacturing of a monolithic oscillator including circuit elements and a BAW resonator, this method including the steps of: a) forming the circuit elements and the resonator and electrically connecting them; b) covering the resonator with a frequency adjustment layer; c) measuring the output frequency of the oscillator; d) modifying the thickness of the frequency adjustment layer to modify the output frequency of the oscillator. | 04-07-2011 |
20110080232 | METHOD FOR MANUFACTURING A BAW RESONATOR WITH A HIGH QUALITY FACTOR - A method for manufacturing a bulk acoustic wave resonator, each resonator including: above a substrate, a piezoelectric resonator, and next to the piezoelectric resonator, a contact pad connected to an electrode of the piezoelectric resonator; and, between the piezoelectric resonator and the substrate, a Bragg mirror including at least one conductive layer extending between the pad and the substrate and at least one upper silicon oxide layer extending between the pad and the substrate, the method including the steps of: depositing the upper silicon oxide layer; and decreasing the thickness unevenness of the upper silicon oxide layer due to the deposition method, so that this layer has a same thickness to within better than 2%, and preferably to within better than 1%, at the level of each pad. | 04-07-2011 |
20110080233 | METHOD FOR MANUFACTURING BAW RESONATORS ON A SEMICONDUCTOR WAFER - A method for manufacturing a wafer on which are formed resonators, each resonator including, above a semiconductor substrate, a stack of layers including, in the following order from the substrate surface: a Bragg mirror; a compensation layer made of a material having a temperature coefficient of the acoustic velocity of a sign opposite to that of all the other stack layers; and a piezoelectric resonator, the method including the successive steps of: a) depositing the compensation layer; and b) decreasing thickness inequalities of the compensation layer due to the deposition method, so that this layer has a same thickness to within better than 2%, and preferably to within better than 1%, at the level of each resonator. | 04-07-2011 |
20120004016 | FILTERING CIRCUIT WITH COUPLED BAW RESONATORS AND HAVING IMPEDANCE MATCHING ADAPTATION - A filtering circuit includes a substrate; an acoustic mirror or a membrane destined to act as a mechanical support of acoustic resonators and to isolate these resonators from the substrate; a first section comprising an upper resonator and a lower resonator coupled to each other by at least one acoustic coupling layer; and a second section comprising an upper resonator and a lower resonator coupled to each other by at least one acoustic coupling layer. The filtering circuit also includes metallic vias implementing an inter stage connection between the lower resonator of a section and the upper resonator of the other section. Preferably, the upper resonators exhibit a piezoelectric layer having a thickness selected in order to achieve an optimal impedance matching between the said first and second sections. | 01-05-2012 |
20120133020 | SEMICONDUCTOR DEVICE COMPRISING A CAPACITOR AND AN ELECTRICAL CONNECTION VIA AND FABRICATION METHOD - A dielectric wafer has, on top of its front face, a front electrical connection including an electrical connection portion. A blind hole passes through from a rear face of the wafer to at least partially reveal a rear face of the electrical connection portion. A through capacitor is formed in the blind hole. The capacitor includes a first conductive layer covering the lateral wall and the electrical connection portion (forming an outer electrode), a dielectric intermediate layer covering the first conductive layer (forming a dielectric membrane), and a second conductive layer covering the dielectric intermediate layer (forming an inner electrode). A rear electrical connection is made to the inner electrode. | 05-31-2012 |
20120133021 | SEMICONDUCTOR DEVICE COMPRISING A CAPACITOR AND AN ELECTRICAL CONNECTION VIA, AND FABRICATION METHOD - A main blind hole is formed in a front face of a wafer having a rear face. A through capacitor is formed in the main blind hole including a conductive outer electrode, a dielectric intermediate layer, and a filling conductive material forming an inner electrode. Cylindrical portions of the outer electrode, the dielectric intermediate layer and the inner electrode have front ends situated in a plane of the front face of the wafer. A secondary rear hole is formed in the rear face of the wafer to reveal a bottom of the outer electrode. A rear electrical connection is made to contact the bottom of the outer electrode through the secondary rear hole. A through hole via filled with a conductive material is provided adjacent the through capacitor. An electrical connection is made on the rear face between the rear electrical connection and the through hole via. | 05-31-2012 |
20120154238 | INTEGRATED MILLIMETER WAVE TRANSCEIVER - A millimeter wave transceiver including a plate forming an interposer having its upper surface supporting an interconnection network and having its lower surface intended to be assembled on a printed circuit board by bumps; an integrated circuit chip assembled on the upper surface of the interposer; antennas made of tracks formed on the upper surface of the interposer; and reflectors on the upper surface of the printed circuit board in front of each of the antennas, the effective distance between each antenna and the reflector plate being on the order of one quarter of the wavelength, taking into account the dielectric constants of the interposed materials. | 06-21-2012 |
20120248932 | METHOD OF ADJUSTING THE RESONANCE FREQUENCY OF A MICRO-MACHINED VIBRATING ELEMENT - The present disclosure relates to a method of adjusting the resonance frequency of a vibrating element, comprising measuring the resonance frequency of the vibrating element, determining, using abacuses and as a function of the resonance frequency measured, a dimension and a position of at least one area of modified thickness to be formed on the vibrating element so that the resonance frequency thereof corresponds to a setpoint frequency, and forming on the vibrating element, an area of modified thickness of the determined dimension and position. | 10-04-2012 |
20120320550 | METHOD FOR ELECTRICAL CONNECTION BETWEEN ELEMENTS OF A THREE-DIMENSIONAL INTEGRATED STRUCTURE AND CORRESPONDING DEVICE - A link device for three-dimensional integrated structure may include a module having a first end face designed to be in front of a first element of the structure, and a second end face designed to be placed in front of a second element of the structure. The two end faces may be substantially parallel, and the module including a substrate having a face substantially perpendicular to the two end faces and carrying an electrically conducting pattern formed in a metallization level on top of the face and enclosed in an insulating region. The electrically conducting pattern may include a first end part emerging onto the first end face and a second end part emerging onto the second end face and connected to the first end part. | 12-20-2012 |
20130027274 | INTEGRATED MILLIMETER WAVE TRANSCEIVER - A millimeter wave transceiver including a plate forming an interposer having its upper surface supporting an interconnection network and having its lower surface intended to be assembled on an electronic device; at least one integrated circuit chip assembled on the upper surface of the interposer; at least one antenna including at least one track formed on the upper surface of the interposer; and at least one block attached under the plate and including in front of each antenna a cavity having a metalized bottom, the distance between each antenna and the bottom being on the order of one quarter of the wavelength, taking into account the dielectric constants of the interposed materials. | 01-31-2013 |
20130335297 | THREE-DIMENSIONAL INTEGRATED STRUCTURE COMPRISING AN ANTENNA - The three-dimensional integrated structure including a support element, an interface device connected to the support element by first electrically conductive connection, an integrated circuit arranged between the support element and the interface device and connected to the interface device by second electrically conductive connection, a filler region between the second electrically conductive connection and between the interface device and the integrated circuit, and an antenna, having a radiating element in electromagnetic coupling with an excitation element through the interconnection of a slot, the antenna being distributed over the interface device and the integrated circuit. | 12-19-2013 |
20140075726 | METHOD FOR MANUFACTURING BAW RESONATORS ON A SEMICONDUCTOR WAFER - A method for manufacturing a wafer on which are formed resonators, each resonator including, above a semiconductor substrate, a stack of layers including, in the following order from the substrate surface: a Bragg mirror; a compensation layer made of a material having a temperature coefficient of the acoustic velocity of a sign opposite to that of all the other stack layers; and a piezoelectric resonator, the method including the successive steps of: a) depositing the compensation layer; and b) decreasing thickness inequalities of the compensation layer due to the deposition method, so that this layer has a same thickness to within better than 2%, and preferably to within better than 1%, at the level of each resonator. | 03-20-2014 |