Patent application number | Description | Published |
20100264508 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD - A semiconductor device and manufacturing method is disclosed. One embodiment provides a common substrate of a first conductivity type and at least two wells of a second conductivity type. A buried high Ohmic region and at least an insulating structure is provided insulating the first well from the second well. The insulating structure extends through the buried high Ohmic region and includes a conductive plug in Ohmic contact with the first semiconductor region. A method for forming an integrated semiconductor device is also provided. | 10-21-2010 |
20110318904 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD - A semiconductor device and manufacturing method is disclosed. One embodiment provides a common substrate of a first conductivity type and at least two wells of a second conductivity type. A buried high resistivity region and at least an insulating structure is provided insulating the first well from the second well. The insulating structure extends through the buried high resistivity region and includes a conductive plug in Ohmic contact with the first semiconductor region. A method for forming an integrated semiconductor device is also provided. | 12-29-2011 |
20130207223 | SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE - One embodiment describes a method of manufacturing a semiconductor device. Here, impurities are implanted into a semiconductor body via a first side of the semiconductor body. Thereafter, a drift zone layer on the first side of the semiconductor body is formed. The following is an ablation of the semiconductor body from a second side of the semiconductor body and up to pn junction defined by impurities. | 08-15-2013 |
20130240902 | Semiconductor Arrangement - A first semiconductor zone of a first conduction type is formed from a semiconductor base material doped with first and second dopants. The first and second dopants are different substances and also different from the semiconductor base material. The first dopant is electrically active and causes a doping of the first conduction type in the semiconductor base material, and causes either a decrease or an increase of a lattice constant of the pure, undoped first semiconductor zone. The second dopant may be electrically active, and may be of the same doping type as the first dopant, causes one or both of: a hardening of the first semiconductor zone; an increase of the lattice constant of the pure, undoped first semiconductor zone if the first dopant causes a decrease, and a decrease of the lattice constant of the pure, undoped first semiconductor zone if the first dopant causes an increase, respectively. | 09-19-2013 |
20130249058 | SEMICONDUCTOR COMPONENT COMPRISING A DOPANT REGION IN A SEMICONDUCTOR BODY AND A METHOD FOR PRODUCING A DOPANT REGION IN A SEMICONDUCTOR BODY - A semiconductor component includes a semiconductor body having a first side and a second side opposite the first side. In the semiconductor body, a dopant region is formed by a dopant composed of an oxygen complex. The dopant region extends over a section L having a length of at least 10 μm along a direction from the first side to the second side. The dopant region has an oxygen concentration in a range of 1×10 | 09-26-2013 |
20150076664 | SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE - One embodiment describes a method of manufacturing a semiconductor device. Here, impurities are implanted into a semiconductor body via a first side of the semiconductor body. Thereafter, a drift zone layer on the first side of the semiconductor body is formed. The following is an ablation of the semiconductor body from a second side of the semiconductor body and up to pn junction defined by impurities. | 03-19-2015 |
20150123247 | SEMICONDUCTOR COMPONENT HAVING A DOPANT REGION FORMED BY A DOPANT COMPOSED OF AN OXYGEN / VACANCY COMPLEX - A semiconductor component includes a semiconductor body having a first side and a second side opposite the first side. In the semiconductor body, a dopant region is formed by a dopant composed of an oxygen complex. The dopant region extends over a section L having a length of at least 10 μm along a direction from the first side to the second side. The dopant region has an oxygen concentration in a range of 1×10 | 05-07-2015 |
20150280288 | Lithium Ion Battery, Integrated Circuit and Method of Manufacturing a Lithium Ion Battery - A lithium ion battery includes a first substrate having a first main surface, and a lid including an insulating material. The lid is attached to the first main surface of the first substrate, and a cavity is defined between the first substrate and the lid. The lithium ion battery further includes an electrical interconnection element in the lid, the electrical interconnection element providing an electrical connection between a first main surface and a second main surface of the lid. The lithium ion battery further includes an electrolyte in the cavity, an anode at the first substrate, the anode including a component made of a semiconductor material, and a cathode at the lid. | 10-01-2015 |
20150294868 | Method of Manufacturing Semiconductor Devices Containing Chalcogen Atoms - Chalcogen atoms are implanted into a single crystalline semiconductor substrate. At a density of interstitial oxygen of at least 5E16 cm | 10-15-2015 |