Patent application number | Description | Published |
20080221261 | LOW DIELECTRIC LOSS TANGENT RESIN COMPOSITION, CURABLE FILM AND CURED PRODUCT, ELECTRICAL PART USING THE SAME AND METHOD FOR PRODUCTION THEREOF - According to the present invention, there is provided a low dielectric loss tangent resin composition containing a crosslinking component having a weight average molecular weight of not more than 1,000 and a plurality of styrene groups and represented by the formula [1], | 09-11-2008 |
20090025824 | FUEL FILLING AND WASTE SOLUTION RECOVERY APPARATUS AND FUEL VESSEL - Recovery of dehydrogenation product must be done separately from supply of hydrogen fuel. However, there is a problem that it takes much time when dehydrogenation product recovery and fuel filling are done separately. A fuel filling/waste solution recovery apparatus includes measuring means to measure a volume of supplied fuel and a volume of recovered waste solution by measuring flow rates of solutions passing through a fuel filling nozzle and a recovery nozzle or piping, and a display which shows the volume of supplied fuel and the volume of recovered waste solution which are measured by the measuring means. | 01-29-2009 |
20090199897 | GLASS COMPOSITION AND ITS APPLICATIONS - A glass composition substantially free from lead and bismuth and containing vanadium oxide and phosphor oxide as main ingredients, wherein the sintered glass of the glass composition exhibits 10 | 08-13-2009 |
20090200070 | Cu-BASED WIRING MATERIAL AND ELECTRONIC COMPONENT USING THE SAME - An object of the present invention is to provide an electronic component, including a wiring that contacts a glass or a glass ceramics member, for which a Cu-based wiring material capable of suppressing generation of bubbles in the glass or the glass ceramics member and having excellent migration resistance is used. The present invention provides an electronic component including a wiring that contacts a glass or a glass ceramics member. In the electronic component, the wiring material is formed of a binary alloy made of two elements of Cu and Al, and contains not more than 50.0% by weight of Al and a balance of unavoidable impurities. | 08-13-2009 |
20100180934 | LOW SOFTENING POINT GLASS COMPOSITION, BONDING MATERIAL USING SAME AND ELECTRONIC PARTS - A low softening point glass composition, which is substantially free from lead, bismuth and antimony and comprises oxides of vanadium, phosphorous, tellurium and iron, a softening point of the composition being 380° C. or lower. | 07-22-2010 |
20120121947 | LITHIUM SECONDARY BATTERY - To provide a functional material which forms a high-resistance layer to interrupt an electric current, thereby ensuring the safety of a battery during overcharge. | 05-17-2012 |
20130333748 | LOW SOFTENING POINT GLASS COMPOSITION, BONDING MATERIAL USING SAME ADN ELECTRONIC PARTS - A low softening point glass composition, which is substantially free from lead, bismuth and antimony and comprises oxides of vanadium, phosphorous, tellurium and iron, a softening point of the composition being 380° C. or lower. | 12-19-2013 |
Patent application number | Description | Published |
20080198432 | HOLOGRAM REPRODUCING APPARATUS, HOLOGRAM REPRODUCING METHOD, AND PHASE MODULATING ELEMENT - A hologram reproducing apparatus includes a first reference light path leading laser light from a laser light source so that a hologram recording medium is irradiated with first reference light; a diffracted light path leading diffracted light, generated from the hologram recording medium by irradiation with the first reference light, to a light receiving element having a plurality of pixels; and a second reference light path leading second reference light, having the same polarization direction as that of the diffracted light, from the laser light source to the light receiving element. The second reference light path is provided with a phase modulating element so that the phase difference between the diffracted light and the second reference light in a light receiving surface of the light receiving element is adjusted within a predetermined range. | 08-21-2008 |
20080220644 | CONNECTOR - A connector includes an electrical insulator made of an insulating material; a plurality of contacts fixed to the electrical insulator aligned in one direction, each contact including a contacting arm which can be in electrically continuous conduction with one of front and rear surfaces of a connection target; and a base portion from which the contacting arm extends to support the contacting arm; and an actuator which presses against the other of the front and rear surfaces of the connection target. At least one of the contacts includes a holding arm which extends from the base portion in a direction substantially parallel to the contacting arm to press the actuator toward the connection target. One of a through-hole and a cutout portion is formed in at least one of the contacts through the base portion thereof in a thickness direction thereof. | 09-11-2008 |
20080268708 | CONNECTOR AND METHOD OF PRODUCING THE SAME - A receptacle includes contact modules, each of which includes contacts, one of common ends thereof being connected to contact pins of a plug when the receptacle and the plug are connected to each other, and the other of the common ends of the contacts being connected to a circuit board. Each contact module includes holding plates arranged in a direction of thickness of the each contact module. At least one conductive layer and at least one insulating portion are formed on opposed surfaces of adjacent holding plates. At least one of contacts is held between the insulating portions that are formed on the opposed surfaces of the adjacent holding plates. | 10-30-2008 |
20120018650 | FINE PARTICLE MEASURING DEVICE - A fine particle measuring device includes an optical filter that is divided into a plurality of areas and is disposed on an optical path on which light emitted from a fine particle, which is irradiated with light, is guided to an optical detector. In the fine particle measuring device, the optical filter includes a first area having wavelength selectivity by which the first area blocks reflected light from the fine particle and an unnecessary scattered light component and transmits fluorescence, and a second area that is disposed around at least the first area and has no wavelength selectivity so as to transmit a necessary scattered light component. | 01-26-2012 |
20130273753 | BOARD CONNECTING TERMINAL AND HOLDING STRUCTURE OF CIRCUIT BOARD - A board connecting terminal includes a contact that comes into contact with a mate side terminal, an indent that comes into contact with a pad formed on a circuit board, a terminal attaching part connected to the indent to attach the board connecting terminal to the circuit board, and an engaging piece connected to the contact and having a part held by a holder on which the circuit board is mounted. In the terminal attaching part, when the board connecting terminal is attached to the circuit board, a part of the terminal attaching part enters a through hole passing through the circuit board in a thickness direction thereof to restrain the indent from moving in a planar direction of the circuit board. | 10-17-2013 |
20130279189 | FIXING STRUCTURE OF INDOOR LAMP - A fixing structure of an indoor lamp includes a lamp unit and an interior wall member. The lamp unit includes a design part arranged at an indoor side of the interior wall member and a functional part arranged at an outdoor side of the interior wall member and assembled with the design part through a lamp attachment hole in a state that the functional part holds the interior wall member therebetween. The functional part has a connector portion for connecting a connector. The design part has a regulating portion which forms a connector insertion portion together with the connector portion when the design part is assembled with the functional part. The regulating portion engages with the connector inserted into the connector insertion portion to regulate displacement of the design part in a disengagement direction from the functional part. | 10-24-2013 |
20130314938 | IN-VEHICLE INDOOR ILLUMINATION APPARATUS - The in-vehicle indoor illumination apparatus which includes a design section, a functional section that is engaged with the design section, and a connector that is inserted to the functional section in a removable manner, wherein an interposition holder of the functional section is provided with two locking frames erected upward from a base housing of the design section at an interval and having resilience, and two locking hooks each engaged with the two locking frames of the design section from outside the two locking frames when the functional section is engaged with the design section, and a section between the two second locking frames is a connector insertion hole into which a housing of the connector is inserted. | 11-28-2013 |
20140027656 | Connector - A connector is provided that includes a housing and an electronic circuit. The housing includes a mating section with a mating contact, a mounting section having a circuit board contact, and a circuit receiving space positioned along an inner surface thereof. The electronic circuit is positioned in the circuit receiving space and connects to both of the mating contact and the circuit board contact. The electronic circuit includes a photocoupler which electrically insulates the mating contact and the circuit board contact from each other and relays a signal in an optical manner. | 01-30-2014 |
20140037248 | Connector - A locking connector having a body with a receiving section and a mating section. The locking connector includes a cantilevered lock arm with a pivoting end integrally formed with a midpoint of the receiving section and extending along an axial direction towards a mating end of the mating section. The locking connector also includes a locking projection disposed on an outer surface of a mating end of the cantilevered lock arm. A lock release arm is integrally formed with the mating end of the cantilevered lock arm and separately extends along the axial direction from the mating end of the cantilevered lock arm towards the receiving section. The lock release arm projects from a terminal end of the receiving section. | 02-06-2014 |
20150145359 | Connector For Motor and Connector Assembly For Motor - A electrical connector for a motor is disclosed having a connector receiving member, a first connector, and a seal assembly. The connector receiving member is disposed on an outer peripheral portion of a stator supporting frame, the stator supporting frame being connected to a stator or a motor housing. The first connector has a first mating portion that mates with the connector receiving member. The seal assembly is positioned in a space between the motor housing and the first mating portion. | 05-28-2015 |
20150145360 | Stator Frame For Motor - A stator frame is disclosed having a substantially annular conductor plate, a connector receiving member, a plurality of wire connecting members, and a substantially annular insulating stator frame housing. The conductor plate has an inner peripheral edge defining an O-shaped opening. The connector receiving member is positioned on an outer peripheral side of the stator frame. The wire connecting members are positioned on a conductor plate surface of the conductor plate along the inner peripheral edge, each wire connecting member being connected to first or second end portions of stator windings, and having an electrical connection with the connector receiving member. The stator frame housing is mounted to a stator, and covers the conductor plate except for the conductor plate surface the wire connecting members are positioned thereon. | 05-28-2015 |
Patent application number | Description | Published |
20110220911 | SEMICONDUCTOR LIGHT-EMITTING DEVICE - According to one embodiment, a semiconductor light-emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a light-emitting layer, a third semiconductor layer and a first electrode. The light-emitting layer is provided between the first and second semiconductor layers. The third semiconductor layer is provided on opposite side of the first semiconductor layer from the light-emitting layer, has a lower impurity concentration than the first semiconductor layer, and includes an opening exposing part of the first semiconductor layer. The first electrode is in contact with the first semiconductor layer through the opening. The third semiconductor layer further includes a rough surface portion which is provided on opposite side from the first semiconductor layer and includes a surface asperity larger than wavelength in the third semiconductor layer of peak wavelength of emission light emitted from the light-emitting layer. | 09-15-2011 |
20110220932 | SEMICONDUCTOR LIGHT-EMITTING DEVICE - According to one embodiment, a semiconductor light-emitting device includes a first semiconductor layer, a second semiconductor layer, a light-emitting layer, a third semiconductor layer and a first electrode. The first semiconductor layer of a first conductivity type has a first major surface provided with a first surface asperity. The second semiconductor layer of a second conductivity type is provided on an opposite side of the first semiconductor layer from the first major surface. The light-emitting layer is provided between the first and second semiconductor layers. The first semiconductor layer is disposed between a third semiconductor layer and the light-emitting layer. The third semiconductor layer has an impurity concentration lower than an impurity concentration of the first semiconductor layer, and includes an opening exposing the first surface asperity. The first electrode is in contact with the first surface asperity through the opening, and reflective to emission light emitted from the light-emitting layer. | 09-15-2011 |
20110227033 | SEMICONDUCTOR LIGHT EMITTING DEVICE, WAFER, METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE, AND METHOD FOR MANUFACTURING WAFER - According to one embodiment, a semiconductor light emitting device includes a first layer, a second layer, and a light emitting portion. The first layer includes at least one of n-type GaN and n-type AlGaN. The second layer includes p-type AlGaN. The light emitting portion has a single quantum well structure. The single quantum well structure includes a first barrier layer, a second barrier layer, and a well layer. The first barrier layer is provided between the first layer and the second layer and includes Al | 09-22-2011 |
20120001090 | MINUTE PARTICLE ANALYZING DEVICE AND METHOD - A minute particle analyzing device includes: a light source; a first condenser lens for condensing light from the light source to a first end of a multimode optical fiber; a second condenser lens for condensing the light emerging from a second end of the multimode optical fiber to a minute particle; and a detector for detecting light generated from the minute particle by the application of the light from the light source. | 01-05-2012 |
20120217531 | SEMICONDUCTOR LIGHT EMITTING DEVICE, SEMICONDUCTOR LIGHT EMITTING APPARATUS, AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes a stacked structure body and an electrode. The stacked structure body has a first conductivity type first semiconductor layer including a nitride-based semiconductor, a second conductivity type second semiconductor layer including a nitride-based semiconductor, and a light emitting layer provided between the first and second semiconductor layers. The electrode has first, second and third metal layers. The first metal layer is provided on the second semiconductor layer and includes silver or silver alloy. The second metal layer is provided on the first metal layer and includes at least one element of platinum, palladium, rhodium, iridium, ruthenium, osmium. The third metal layer is provided on the second metal layer. A thickness of the third metal layer along a direction from the first toward the second semiconductor layer is equal to or greater than a thickness of the second metal layer. | 08-30-2012 |
20120235168 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes a stacked structure body, first and second electrodes. The stacked structure body includes first and second semiconductor layers and a light emitting layer provided between the second and first semiconductor layers, and has first and second major surfaces. The first electrode has a first contact part coming into contact with the first semiconductor layer. The second electrode has a part coming into contact with the second semiconductor layer. A surface of the first semiconductor layer on a side of the first major surface has a first part having a part overlapping a contact surface with the first semiconductor layer and a second part having a part overlapping the second semiconductor layer. The second part has irregularity. A pitch of the irregularity is longer than a peak wavelength of emission light. The first part has smaller irregularity than the second part. | 09-20-2012 |
20130069032 | SEMICONDUCTOR LIGHT EMITTING DEVICE, WAFER, METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE, AND METHOD FOR MANUFACTURING WAFER - According to one embodiment, a semiconductor light emitting device includes a first layer of n-type and a second layer of p-type including a nitride semiconductor, a light emitting unit provided between the first and second layers, a first stacked structure provided between the first layer and the light emitting unit, and a second stacked structure provided between the first layer and the first stacked structure. The light emitting unit includes barrier layers and a well layer provided between the barrier layers. The first stacked structure includes third layers including a nitride semiconductor, and fourth layers stacked with the third layers and including GaInN. The fourth layers have a thinner thickness than the well layer. The second stacked structure includes fifth layers including a nitride semiconductor, and sixth layers stacked with the fifth layers and including GaInN. The sixth layers have a thinner thickness than the well layer. | 03-21-2013 |
20130069033 | SEMICONDUCTOR DEVICE, WAFER, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING WAFER - According to one embodiment, a semiconductor device includes a first layer of n-type including a nitride semiconductor, a second layer of p-type including a nitride semiconductor, a light emitting unit, and a first stacked body. The light emitting unit is provided between the first and second layers. The first stacked body is provided between the first layer and the light emitting unit. The first stacked body includes a plurality of third layers including AlGaInN, and a plurality of fourth layers alternately stacked with the third layers and including GaInN. The first stacked body has a first surface facing the light emitting unit. The first stacked body has a depression provided in the first surface. A part of the light emitting unit is embedded in a part of the depression. A part of the second layer is disposed on the part of the light emitting unit. | 03-21-2013 |
20150072459 | METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes a stacked structure body and an electrode. The stacked structure body has a first conductivity type first semiconductor layer including a nitride-based semiconductor, a second conductivity type second semiconductor layer including a nitride-based semiconductor, and a light emitting layer provided between the first and second semiconductor layers. The electrode has first, second and third metal layers. The first metal layer is provided on the second semiconductor layer and includes silver or silver alloy. The second metal layer is provided on the first metal layer and includes at least one element of platinum, palladium, rhodium, iridium, ruthenium, osmium. The third metal layer is provided on the second metal layer. A thickness of the third metal layer along a direction from the first toward the second semiconductor layer is equal to or greater than a thickness of the second metal layer. | 03-12-2015 |
Patent application number | Description | Published |
20130169953 | SYSTEM AND METHOD FOR MEASURING NARROW AND WIDE ANGLE LIGHT SCATTER ON A HIGH-SPEED CELL SORTING DEVICE - The various embodiments disclosed herein utilize multiple lasers that have different wavelengths and a single detection path. The lasers are mounted orthogonal to one another so that one laser will provide a forward angle light scatter (FALS) signal in the detection path, and one laser will provide a side scatter signal in the detection path (i.e., the single detection optics are approximately in-line with the FALS laser and approximately orthogonal to the side scatter laser). The single detector path spectrally separates the forward and side scatter signals prior to applying them to their respective detectors for measurement. | 07-04-2013 |
20130328055 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes first and second electrodes, first, second and third semiconductor layers, and a light emitting layer. The first semiconductor layer of a first conductivity type is provided on the first electrode. The light emitting layer is provided on the first semiconductor layer. The second semiconductor layer of a second conductivity type is provided on the light emitting layer. The third semiconductor layer with low impurity concentration is provided on a part of the second semiconductor layer. The second electrode includes a pad section and a narrow wire section. The pad section is provided on the third semiconductor layer. The narrow wire section extends out from the pad section and includes an extending portion extending along a plane perpendicular to a stacking direction. The narrow wire section is in contact with the second semiconductor layer. | 12-12-2013 |
20130328075 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a semiconductor light emitting device includes first and second electrodes, first and second semiconductor layers and a light emitting layer. The first electrode includes a first region, a second region, and a third region provided between them. The first semiconductor layer includes a first portion on the first region and a second portion on the second region. The light emitting layer includes a third portion on the first portion and a fourth portion on the second portion. The second semiconductor layer includes a fifth portion on the third portion and a sixth portion on the fourth portion. The insulating layer is provided between the first and second portions on the third region and between the third and fourth portions. The second electrode includes a seventh portion provided on the insulating layer, eighth and ninth portions contacting side surfaces of the fifth and sixth portions. | 12-12-2013 |
20140048816 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes a metal substrate, a first semiconductor layer, a first semiconductor layer, a second semiconductor layer, a light emitting layer, a first intermediate layer and a second intermediate layer. The substrate has a coefficient of thermal expansion not more than 10×10 | 02-20-2014 |
20140138614 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes: a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type; a light emitting layer; a conductive metal layer; and a first stress application layer. The first semiconductor layer contains a nitride semiconductor crystal and receives tensile stress in a (0001) plane. The second semiconductor layer contains a nitride semiconductor crystal. The light emitting layer has an average lattice constant larger than a lattice constant of the first semiconductor layer. The conductive metal layer has a thermal expansion coefficient larger than a thermal expansion coefficient of a nitride semiconductor crystal. The first stress application layer is provided between the second semiconductor layer and the light emitting layer. The first stress application layer relaxes tensile stress applied from the metal layer to the second semiconductor layer. | 05-22-2014 |
20140138722 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a semiconductor light emitting device includes: a stacked body, a wavelength conversion layer, a first metal layer, and a first insulating section. The stacked body includes: a first and a second semiconductor layers; and a first light emitting layer provided between the first and the second semiconductor layers. The wavelength conversion layer is configured to convert wavelength of light emitted from the first light emitting layer. The first semiconductor layer is placed between the first light emitting layer and the wavelength conversion layer. The first metal layer is electrically connected to the second semiconductor layer. The first insulating section is provided between a first side surface and a first side surface portion of the first metal layer and between the wavelength conversion layer and the first side surface portion. | 05-22-2014 |
20140264413 | SEMICONDUCTOR LIGHT EMITTING ELEMENT, LIGHT EMITTING DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING ELEMENT - A semiconductor light emitting element includes a stacked body, a first metal layer, and a second metal layer. The stacked body includes a first semiconductor layer, a second semiconductor layer, and a light emitting layer. The second semiconductor layer is separated from the first semiconductor layer in a first direction. The light emitting layer is provided between the first semiconductor layer and the second semiconductor layer. The first metal layer is stacked with the stacked body in the first direction to be electrically connected to one selected from the first semiconductor layer and the second semiconductor layer. The first metal layer has a side surface extending in the first direction. The second metal layer covers at least a portion of the side surface of the first metal layer. A reflectance of the second metal layer is higher than a reflectance of the first metal layer. | 09-18-2014 |
20150104972 | Connector - An electrical connector housing is disclosed having a first housing member, and a second housing member mated with the first housing member. A front wall is disposed on an outer surface of at least one of the housing members and extends perpendicular to an insertion direction. A first sidewall is disposed on the outer surface of the first housing member and extends along the insertion direction, perpendicular to the front wall. A second sidewall is disposed on the outer surface of the second housing member and extends along the insertion direction, parallel with the first sidewall and perpendicular to the front wall. A cantilevered first lock arm extends along an insertion direction and is positioned between the first sidewall and second sidewall. The lock arm includes a fixed end, a free end, and a hook. | 04-16-2015 |
Patent application number | Description | Published |
20150162694 | LOCKING STRUCTURE OF TERMINAL FITTING AND BULB SOCKET - A locking structure includes a terminal fitting and a terminal containing portion that holds and contains the terminal fitting so that the terminal fitting is electrically connected to a connection counterpart in a condition that at least part of the connection counterpart is inserted in the terminal containing portion. A first lock projection which is elastically deformable and is provided on the terminal fitting is locked on a second lock projection which is provided on the terminal containing portion. The at least part of the connection counterpart inserted in the terminal containing portion restricts elastic deformation of the first lock projection in a direction in which the first lock projection is unlocked from the second lock projection. | 06-11-2015 |
20150162695 | LOCKING STRUCTURE OF TERMINAL FITTING, BULB SOCKET, AND ILLUMINATION DEVICE - A locking structure of a terminal fitting includes a terminal fitting, a terminal containing portion that holds and contains the terminal fitting therein, and a restriction member that is attached to the terminal containing portion. The terminal fitting is locked in the terminal containing portion by a lock projection of the terminal fitting. The terminal containing portion has a guide space formed by a gap between the lock projection and an inner wall surface of the terminal containing portion to guide the terminal fitting to a lock position therethrough. The restriction member has a restriction wall which is butted by the lock projection of the terminal fitting and thereby prevents from releasing of the terminal fitting when the terminal fitting is moved in such a direction as to be released from the terminal containing portion. | 06-11-2015 |
20150162715 | LOCKING STRUCTURE OF TERMINAL FITTING, BULB SOCKET, AND ILLUMINATION DEVICE - A locking structure of a terminal fitting includes a terminal fitting, a terminal containing portion that holds and contains the terminal fitting, and a restriction member that is separate from and is attached to the terminal containing portion. A lock projection of the terminal fitting is locked on a holding-side lock portion of the terminal containing portion at a lock position of the holding-side lock portion. The holding-side lock portion is provided so as to be deformed elastically in such a direction as to reduce an elastic deformation amount of the lock projection being moved toward the lock position for the elastic restoration. The restriction member has a restriction wall which restricts elastic deformation of the holding-side lock portion in an unlocking direction in which the lock with the lock projection is released. | 06-11-2015 |