Patent application number | Description | Published |
20080220606 | SELF-ALIGNED METAL TO FORM CONTACTS TO Ge CONTAINING SUBSTRATES AND STRUCTURE FORMED THEREBY - A method for forming germano-silicide contacts atop a Ge-containing layer that is more resistant to etching than are conventional silicide contacts that are formed from a pure metal is provided. The method of the present invention includes first providing a structure which comprises a plurality of gate regions located atop a Ge-containing substrate having source/drain regions therein. After this step of the present invention, a Si-containing metal layer is formed atop the said Ge-containing substrate. In areas that are exposed, the Ge-containing substrate is in contact with the Si-containing metal layer. Annealing is then performed to form a germano-silicide compound in the regions in which the Si-containing metal layer and the Ge-containing substrate are in contact; and thereafter, any unreacted Si-containing metal layer is removed from the structure using a selective etch process. In some embodiments, an additional annealing step can follow the removal step. The method of the present invention provides a structure having a germano-silicide contact layer atop a Ge-containing substrate, wherein the germano-silicide contact layer contains more Si than the underlying Ge-containing substrate. | 09-11-2008 |
20080227283 | SELF-ALIGNED METAL TO FORM CONTACTS TO Ge CONTAINING SUBSTRATES AND STRUCTURE FORMED THEREBY - A method for forming gennano-silicide contacts atop a Ge-containing layer that is more resistant to etching than are conventional silicide contacts that are formed from a pure metal is provided. The method of the present invention includes first providing a structure which comprises a plurality of gate regions located atop a Ge-containing substrate having source/drain regions therein. After this step of the present invention, a Si-containing metal layer is formed atop the said Ge-containing substrate. In areas that are exposed, the Ge-containing substrate is in contact with the Si-containing metal layer. Annealing is then performed to form a germano-silicide compound in the regions in which the Si-containing metal layer and the Ge-containing substrate are in contact; and thereafter, any unreacted Si-containing metal layer is removed from the structure using a selective etch process. In some embodiments, an additional annealing step can follow the removal step. The method of the present invention provides a structure having a germano-silicide contact layer atop a Ge-containing substrate, wherein the germano-silicide contact layer contains more Si than the underlying Ge-containing substrate. | 09-18-2008 |
20080299720 | STABILIZATION OF Ni MONOSILICIDE THIN FILMS IN CMOS DEVICES USING IMPLANTATION OF IONS BEFORE SILICIDATION - A method for forming a stabilized metal silicide film, e.g., contact (source/drain or gate), that does not substantially agglomerate during subsequent thermal treatments, is provided. In the present invention, ions that are capable of attaching to defects within the Si-containing layer are implanted into the Si-containing layer prior to formation of metal silicide. The implanted ions stabilize the film, because the implants were found to substantially prevent agglomeration or at least delay agglomeration to much higher temperatures than in cases in which no implants were used. | 12-04-2008 |
20110137093 | ENHANCING CATALYTIC ACTIVITY OF NANOPOROUS MATERIALS - The present invention relates to the use of atomic layer deposition (ALD) techniques to enhance the acid catalytic activity of nanoporous materials. | 06-09-2011 |
20110200822 | ATOMIC LAYER DEPOSITION POWDER COATING - A system and method are described for providing simultaneously conformal coating of a plurality of three dimensional objects using atomic layer deposition. The system comprises a dielectric tube adapted for maintaining the plurality of objects under vacuum and at least one inlet for providing a gaseous material in the dielectric tube. The dielectric tube used for comprising the objects is mounted rotatable so as to be able to rotate the plurality of objects under vacuum during atomic layer deposition of a coating on the plurality of objects. | 08-18-2011 |
20120207264 | COATED NUCLEAR REACTOR FUEL PARTICLES - A method is described for producing nuclear fuel products, including the steps of receiving metallic or intermetallic uranium-based fuel particle cores, providing at least one physical vapour deposited coating layer surrounding the fuel particle core and embedding the nuclear fuel particles in a matrix so as to form a powder mixture of matrix material and coated fuel particles. The at least one physical vapour deposited coating layer may include inhibitors of inhibiting, stabilizing and/or reducing interaction between metallic and intermetallic uranium-based fuel particles cores and the matrix wherein the fuel particles typically may be embedded. The deposited coating layer may include neutron poisons. | 08-16-2012 |