Patent application number | Description | Published |
20080241979 | Multi-directional light scattering LED and manufacturing method thereof - A multidirectional light scattering LED and a manufacturing method thereof are disclosed. A metal oxide is irregular disposed over a second semiconductor layer and then is removed by etching. Part of the second semiconductor layer, part of a light-emitting layer or part of the first semiconductor layer is also removed so as to form a scattering layer. A transparent conductive layer is arranged over the second semiconductor layer while further a second electrode is disposed over the transparent conductive layer. A first electrode is installed on the scattering layer. Thus light output from the LED is scattered in multi-directions. | 10-02-2008 |
20080303034 | Light-emitting gallium nitride-based III-V group compound semiconductor device and manufacturing method thereof - A light-emitting gallium nitride-based III-V group compound semiconductor device and a manufacturing method thereof are disclosed. The light emitting device includes a substrate, a n-type semiconductor layer over the substrate, an active layer over the n-type semiconductor layer, a p-type semiconductor layer over the active layer, a conductive layer over the p-type semiconductor layer, a first electrode disposed on the conductive layer and a second electrode arranged on exposed part of the n-type semiconductor layer. A resistant reflective layer or a contact window is disposed on the p-type semiconductor layer, corresponding to the first electrode so that current passes beside the resistant reflective layer or by the contact window to the active layer for generating light. When the light is transmitted to the conductive layer for being emitted, it is not absorbed or shielded by the first electrode. Thus the current is distributed efficiently over the conductive layer. Therefore, both LED brightness and efficiency are improved. Moreover, adhesion between the conductive layer and the p-type semiconductor layer is improved so that metal peel-off problem during manufacturing processes can be improved. | 12-11-2008 |
20090267095 | Light-Emitting Device with Reflection Layer and Structure of the Reflection Layer - The present invention provides a light-emitting device with a reflection layer and the structure of the reflection layer. The reflection layer comprises a variety of dielectric materials. The reflection layer includes a plurality of dielectric layers. The materials of the plurality of dielectric layers have two or more types with two or more thicknesses, except for the combination of two material types and two thicknesses, for forming the reflection layer with a variety of structures. The reflection layer according to the present invention can be applied to light-emitting diodes of various types to form new light-emitting devices. Owing to its excellent reflectivity, the reflection layer can improve light-emitting efficiency of the light-emitting devices. | 10-29-2009 |
20090275156 | Light-emitting gallium nitride-based III-V group compound semiconductor device and manufacturing method thereof - A light-emitting gallium nitride-based III-V group compound semiconductor device and a manufacturing method thereof are disclosed. The light emitting device includes a substrate, a n-type semiconductor layer over the substrate, an active layer over the n-type semiconductor layer, a p-type semiconductor layer over the active layer, a conductive layer over the p-type semiconductor layer, a first electrode disposed on the conductive layer and a second electrode arranged on exposed part of the n-type semiconductor layer. A resistant reflective layer or a contact window is disposed on the p-type semiconductor layer, corresponding to the first electrode so that current passes beside the resistant reflective layer or by the contact window to the active layer for generating light. When the light is transmitted to the conductive layer for being emitted, it is not absorbed or shielded by the first electrode. Thus the current is distributed efficiently over the conductive layer. Therefore, both LED brightness and efficiency are improved. Moreover, adhesion between the conductive layer and the p-type semiconductor layer is improved so that metal peel-off problem during manufacturing processes can be improved. | 11-05-2009 |
20100078671 | Nitride based semiconductor light emitting device - A nitride based semiconductor light emitting device is revealed. The light emitting device includes a light emitting epitaxial layer, a P-type electrode and a N-type electrode. The P-type electrode and the N-type electrode are disposed on the light emitting epitaxial layer. The light emitting device features on that the N-type electrode is arranged on the inner side of the P-type electrode. The P-type electrode extends toward the N-type electrode along the edge of the light emitting epitaxial layer and the N-type electrode extends inward along the inner side of the P-type electrode. By means of the electrode pattern with special design, the light emitting area of the light emitting device is increased. | 04-01-2010 |
Patent application number | Description | Published |
20080220599 | Method of fabricating short-gate-length electrodes for integrated III-V compound semiconductor devices - A method of fabricating short-gate-length electrodes for integrated III-V compound semiconductor devices, particularly for integrated HBT/HEMT devices on a common substrate is disclosed. The method is based on dual-resist processes, wherein a first thin photo-resist layer is utilized for defining the gate dimension, while a second thicker photo-resist layer is used to obtain a better coverage on the surface for facilitating gate metal lift-off. The dual-resist method not only reduces the final gate length, but also mitigates the gate recess undercuts, as compared with those fabricated by the conventional single-resist processes. Furthermore, the dual-resist method of the present invention is also beneficial for the fabrication of multi-gate device with good gate-length uniformity. | 09-11-2008 |
20130334564 | MONOLITHIC COMPOUND SEMICONDUCTOR STRUCTURE - A monolithic compound semiconductor structure is disclosed. The monolithic compound semiconductor structure comprises a substrate, an n-type FET epitaxial structure, an n-type etching-stop layer, a p-type insertion layer, and an npn HBT epitaxial structure, and it can be used to form an FET, an HBT, or a thyristor. | 12-19-2013 |
20140209926 | SEMICONDUCTOR INTEGRATED CIRCUIT - A compound semiconductor integrated circuit chip has a front and/or back surface metal layer used for electrical connection to an external circuit. The compound semiconductor integrated circuit chip (first chip) comprises a substrate, an electronic device layer, and a dielectric layer. A first metal layer is formed on the front side of the dielectric layer, and a third metal layer is formed on the back side of the substrate. The first and third metal layer are made essentially of Cu and used for the connection to other electronic circuits. A second chip may be mounted on the first chip with electrical connection made with the first or the third metal layer that extend over the electronic device in the first chip in the three-dimensional manner to make the electrical connection between the two chips having connection nodes away from each other. | 07-31-2014 |
20140231876 | pHEMT and HBT integrated epitaxial structure - An improved pseudomorphic high electron mobility transistor (pHEMT) and heterojunction bipolar transistor (HBT) integrated epitaxial structure, in which the structure comprises a substrate, a pHEMT structure, an etching-stop spacer layer, and an HBT structure. The pHEMT structure comprises a buffer layer, a bottom barrier layer, a first channel spacer layer, a channel layer, a second channel spacer layer, a Schottky spacer layer, a Schottky donor layer, a Schottky barrier layer, an etching-stop layer, and at least one cap layer. By introducing the first channel spacer layer and the second channel spacer layer to reduce the density of the dislocations and to reduce the compressive strain in the pseudomorphic channel layer. | 08-21-2014 |
20140312390 | Layout Structure of Heterojunction Bipolar Transistors - A layout structure of HBTs comprising one or more HBTs, each of which comprises a base electrode, an emitter electrode, and a collector electrode. A passive layer, a first dielectric layer, a collector redistribution layers, one or more emitter copper pillars, and one or more collector copper pillars are formed above the one or more HBTs. The passive layer comprises a collector and an emitter pads. The first dielectric layer has one or more emitter and collector via holes. The emitter copper pillar is disposed on the emitter via hole and forms an electrical connection to the emitter electrode. The collector copper pillar is disposed on the collector redistribution layer and forms electrical connection to the collector electrode. The layout design of the emitter and collector copper pillars is therefore flexible, and the heat dissipation efficiency is improved. | 10-23-2014 |
Patent application number | Description | Published |
20100321194 | ELECTRONIC APPARATUS WITH ACTIVE POSTURE CONTROL FUNCTION - An electronic apparatus with an active posture control function includes a body assembly, an accelerometer, a driving device and a controller. The body assembly includes a first body and a second body pivotally connected to the first body. The accelerometer mounted on the body assembly senses acceleration of the body assembly to output an acceleration signal. The driving device mounted on the body assembly drives at least one of the first body and the second body. The controller, mounted on the body assembly and electrically connected to the accelerometer and the driving device, receives the acceleration signal, judges whether the acceleration signal is higher than a predetermined level, and controls the driving device to adjust an included angle between the first body and the second body when the acceleration signal is higher than the predetermined level. | 12-23-2010 |
20130016927 | ACTIVE COMPENSATING HYDROSTATIC BEARING AND HYDROSTATIC BEARING MODULE USING THE SAMEAANM SUNG; Cheng-KuoAACI Hsinchu CityAACO TWAAGP SUNG; Cheng-Kuo Hsinchu City TWAANM Fong; Zhang-HuaAACI Chiayi CountyAACO TWAAGP Fong; Zhang-Hua Chiayi County TWAANM Lu; Jia-WeiAACI Taoyuan CountyAACO TWAAGP Lu; Jia-Wei Taoyuan County TWAANM Hung; Yu-MinAACI Taichung CityAACO TWAAGP Hung; Yu-Min Taichung City TWAANM Lee; Wei-ChihAACI Chiayi CityAACO TWAAGP Lee; Wei-Chih Chiayi City TW - An active/self-sensing compensating hydrostatic bearing is disposed between first and second structures to allow relative movement between the first and second structures. The hydrostatic bearing includes a body and a compensator. The body, fixed to the first structure and separated from the second structure by a first gap, has a chamber and an input passage and an output passage both communicating with the chamber. The compensator is disposed in the chamber. A compensating passage, communicating with the input passage and the output passage, is formed between the body and the compensator. A pressurized fluid flows from the input passage to the output passage through the compensating passage, and the pressurized fluid in the output passage flows to the first gap to maintain the stability and the rigidity for the relative movement between the first and second structures. A hydrostatic bearing module using the hydrostatic bearing is also disclosed. | 01-17-2013 |
20130052425 | MICRO-NANO COMPOSITE STRUCTURE AND PRODUCTION METHOD THEREOF - A micro-nano composite structure and production method thereof, whereby a micro structure is fabricated by a first layer material, and then a second layer material (such as: aluminum) covers the micro structure which conducts current through the second layer material forming an anodized aluminum to produce a nanostructure, and this nanostructure is layered on the micro structure. This structure, when completed, can be used as a mold, moreover by using nano-imprinting technology this structure can be transferred onto a transparent polymer material in a one-time production process to produce one micro-nano composite structure, and achieving a reduction of the reflection coefficients and an increased transmittance, as well as raising the usage rate of the integrated light. | 02-28-2013 |