Patent application number | Description | Published |
20090261436 | NEGATIVE-RESISTANCE DEVICE WITH THE USE OF MAGNETO-RESISTIVE EFFECT - A magneto-resistive device has a magnetic free layer ( | 10-22-2009 |
20090321246 | METHOD OF FABRICATING AND APPARATUS OF FABRICATING TUNNEL MAGNETIC RESISTIVE ELEMENT - A method and an apparatus of fabricating a tunnel magnetic resistive element which do not show much dispersion in RA and capable of obtaining a high MR ratio in a low RA are provided. The method of fabricating a tunnel magnetic resistive element includes a first ferromagnetic layer, a tunnel barrier layer made of metal oxide and a second ferromagnetic layer, wherein a step of making the tunnel barrier layer includes carrying out film formation of a first metal layer while doping oxygen on the first ferromagnetic layer, subsequently an oxidation process on the oxygen-doped first metal layer to make an oxide layer and film formation of a second metal layer on the oxide layer. | 12-31-2009 |
20090322419 | AMPLIFYING APPARATUS USING MAGNETO-RESISTIVE DEVICE - An amplifying apparatus includes a magneto-resistive device which has a magnetic free layer, a magnetic pinned layer having a magnetic moment larger than that of the magnetic free layer, and an intermediate layer provided in between the magnetic free layer and the magnetic pinned layer. The amplifying apparatus has a first electrode layer provided in a magnetic free layer side of the magneto-resistive device, and a second electrode layer provided in a magnetic pinned layer side of the magneto-resistive device. The amplifying apparatus further includes a direct-current bias power-source for applying a direct-current bias to the magneto-resistive device, and a load resistor. The amplifying apparatus continually causes the change of a magnetization direction of the magnetic free layer to make the magneto-resistive device show negative resistance, and thereby amplifies an input signal. | 12-31-2009 |
20100078310 | FABRICATING METHOD OF MAGNETORESISTIVE ELEMENT, AND STORAGE MEDIUM - The present invention provides a fabricating method of a magnetoresistive element having an MR ratio higher than a conventional MR ratio. In a step of depositing a magnetization fixed layer, a magnetization free layer, and a tunnel barrier layer on a substrate using a sputtering method in one embodiment of the present invention, the step of depositing the magnetization free layer deposits a ferromagnetic layer containing Co atoms, Fe atoms, and B atoms by a co-sputtering method using a first target containing Co atoms, Fe atoms and B atoms, and a second target having different B atom content from that of the first target. | 04-01-2010 |
20100080894 | FABRICATING METHOD OF MAGNETORESISTIVE ELEMENT, AND STORAGE MEDIUM - The present invention provides a fabricating method of a magnetoresistive element having an MR ratio higher than a conventional MR ratio. In a step of depositing a magnetization fixed layer, a magnetization free layer, and a tunnel barrier layer on a substrate using a sputtering method in one embodiment of the present invention, the step of depositing the magnetization fixed layer deposits a ferromagnetic layer containing Co atoms, Fe atoms, and B atoms by a co-sputtering method using a first target containing Co atoms, Fe atoms and B atoms, and a second target having different B atom content from that of the first target. | 04-01-2010 |
20100200394 | VACUUM THIN FILM FORMING APPARATUS - In order to automatically adjust a self-bias on a substrate to a constant value at all times and to form a high-quality insulating film with excellent process reproducibility, a vacuum thin film forming apparatus according to the present invention includes: a high-frequency sputtering device having a chamber, an evacuation means for evacuating the inside of the chamber, a gas introduction means for supplying gas into the chamber, a substrate holder provided within the chamber, and an electrode provided within the substrate holder; and at least one vacuum treatment chamber that can be selected from a group including a physical vapor deposition (PVD) chamber, a chemical vapor deposition (CVD) chamber, a physical etching chamber, a chemical etching chamber, a substrate heating chamber, a substrate cooling chamber, an oxidation treatment chamber, a reduction treatment chamber, and an ashing chamber, wherein the high-frequency sputtering device further includes a variable impedance mechanism electrically connected to the electrode for adjusting the potential of the substrate on the substrate holder. | 08-12-2010 |
20100213047 | HIGH-FREQUENCY SPUTTERING DEVICE - Provided is a high-quality magnetoresistive thin film by using a method of controlling self bias of a high-frequency sputtering device. In order to control the self bias for the substrate by adjusting a substrate potential, the high-frequency sputtering device according to the present invention includes: a chamber; evacuation means for evacuating the inside of the chamber; gas introduction means for supplying a gas into the chamber; a substrate holder provided with a substrate mounting table; rotation drive means capable of rotating the substrate holder; a sputtering cathode provided with a target mounting table and arranged such that the surface of the target mounting table is non-parallel to the surface of the substrate mounting table; an electrode disposed inside the substrate holder; and a variable impedance mechanism electrically connected to the electrode, for adjusting the substrate potential on the substrate holder. | 08-26-2010 |
20110253037 | VACUUM HEATING AND COOLING APPARATUS - The vacuum heating and cooling apparatus can rapidly heat and cool only the substrate after film-forming treatment while maintaining high vacuum. The temperature rise of members in the chamber with time caused by accumulation of heat is suppressed, and the variation of temperature between substrates is decreased. In an embodiment, the heating and cooling apparatus for heating and cooling a substrate in a vacuum, includes: a vacuum chamber; a radiation energy source positioned at the vacuum chamber on an atmosphere side for emitting a heating light; an incidence part for causing the heating light from the radiation energy source to enter the vacuum chamber; a substrate-holding member for holding the substrate; and a substrate-transfer mechanism for transferring the substrate held by the substrate-holding member in a heating state to a heating position proximal to the radiation energy source, and transferring the substrate and the substrate-holding member in a non-heating state to a non-heating position distant from the radiation energy source, wherein the substrate-holding member has a plate shape for placing the substrate thereon and has an outer shape larger than that of the incidence part for causing the heating light to enter the vacuum chamber. | 10-20-2011 |
20110303527 | SUBSTRATE PROCESSING APPARATUS AND APPARATUS AND METHOD OF MANUFACTURING MAGNETIC DEVICE - According to the present invention, it can be switched whether or not to apply a magnetic field to a substrate depending on a material of a film to be formed, and a magnetic layer and a non-magnetic layer can be formed in the same chamber. | 12-15-2011 |
20120193071 | VACUUM HEATING/COOLING APPARATUS AND MANUFACTURING METHOD OF MAGNETORESISTANCE ELEMENT - The present invention provides a vacuum heating/cooling apparatus capable of rapidly heating and also rapidly cooling only a substrate while a high vacuum degree is maintained after film-formation processing. The vacuum heating/cooling apparatus according to an embodiment of the present invention includes a vacuum chamber ( | 08-02-2012 |
Patent application number | Description | Published |
20090148595 | Method of Manufacturing Magnetoresistance Effect Element and Apparatus for Manufacturing the Same - A method of manufacturing a magnetoresistance effect element having a high MR ratio even with a low RA and an apparatus of the same are provided. The magnetoresistance effect element having an MgO (magnesium oxide) layer provided between a ferromagnetic layer and a second ferromagnetic layer is manufactured by forming a film of the MgO layer in a film forming chamber in which a substance whose getter effect with respect to the oxidizing gas such as oxygen or water is large is adhered to the surfaces of components (an inner wall | 06-11-2009 |
20100178528 | TUNNEL MAGNETORESISTIVE THIN FILM AND MAGNETIC MULTILAYER FILM FORMATION APPARATUS - A tunnel magnetoresistive thin film which can simultaneously realize a high MR ratio and low magnetostriction is provided. | 07-15-2010 |
20110143460 | METHOD OF MANUFACTURING MAGNETORESISTANCE ELEMENT AND STORAGE MEDIUM USED IN THE MANUFACTURING METHOD - An embodiment of the invention provides a method of manufacturing a magnetoresistance element with an MR ratio higher than that of the related art. | 06-16-2011 |
20110262634 | METHOD OF MANUFACTURING MAGNETORESISTIVE DEVICE AND APPARATUS FOR MANUFACTURING THE SAME - A magnetoresistive device has an MgO (magnesium oxide) layer provided between a first ferromagnetic layer and a second ferromagnetic layer. The device is manufactured by forming a film of the MgO layer in a film forming chamber. A substance whose getter effect with respect to an oxidizing gas is large is adhered to surfaces of components provided in the chamber for forming the MgO layer. The substance having a large getter effect is a substance whose value of oxygen gas adsorption energy is 145 kcal/mol or higher. Ta (tantalum), in particular, is preferable as a substance which constitutes the magnetoresistive device. | 10-27-2011 |
20130134032 | METHOD OF FABRICATING AND APPARATUS OF FABRICATING TUNNEL MAGNETIC RESISTIVE ELEMENT - One embodiment of the present invention is a method of fabricating a tunnel magnetic resistive element including a first ferromagnetic layer, a tunnel barrier layer and a second ferromagnetic layer, comprising a step of making the tunnel barrier layer, comprising the step of making the tunnel barrier layer includes the steps of: forming a first layer on the first ferromagnetic layer by applying DC power to a metal target and introducing sputtering gas without introducing oxygen gas in a sputtering chamber; and forming a second layer on the first layer by applying DC power to the metal target and introducing the sputtering gas and oxygen gas with the DC power to be applied to the metal target from the step of forming the first layer in the sputtering chamber, wherein the second layer is oxygen-doped. | 05-30-2013 |
20130161182 | SPUTTER APPARATUS, CONTROL DEVICE FOR SPUTTER APPARATUS AND FILM FORMATION METHOD - In an embodiment of the present invention, the following operations are performed while a substrate holder is being rotated at a fixed rotation speed with plasma being generated. Specifically, a first state where a substrate holding surface of the substrate holder is exposed to a target holder is formed to start a first deposition of divisional depositions, and a second state where the surface is shut off from the target holder is formed in T/X seconds after the start of the first divisional deposition. Moreover, the first state is formed to start an n-th deposition of the divisional depositions when a reference point set on the substrate holder arrived at a position rotated by (n−1)×360/X degrees from a position of the reference point located at the start of the targeted deposition, and the second state is formed in T/X seconds after the start of the n-th divisional deposition. | 06-27-2013 |