Patent application number | Description | Published |
20100222347 | PROPHYLACTIC AND/OR THERAPEUTIC AGENT FOR ANEMIA, COMPRISING TETRAHYDROQUINOLINE COMPOUND AS ACTIVE INGREDIENT - Disclosed is a low-molecular-weight compound having an EPO production-promoting activity and/or a hemoglobin expression-enhancing activity. Specifically disclosed is an EPO production promoter and/or a hemoglobin expression enhancer comprising a 1-acyl-4-(phenoxy, benzyloxy or phenylamino)-1,2,3,4-tetrahydroquinoline derivative, more specifically a tetrahydroquinoline compound represented by the general formula (1); | 09-02-2010 |
20120004197 | PROPHYLACTIC AND/OR THERAPEUTIC AGENT FOR ANEMIA COMPRISING TETRAHYDROQUINOLINE COMPOUND AS ACTIVE INGREDIENT - Disclosed is a compound which has a low molecular weight and has an activity of enhancing the production of EPO and/or an activity of enhancing the production of hemoglobin. Specifically disclosed is and EPO production enhancer and/or a hemoglobin production enhancer comprising a 1-acyl-4-(substituted oxy, substituted amino, or substituted thio)-1,2,3,4-tetrahydroquinoline derivative, more specifically a tetrahydroquinoline compound represented by general formula (1) [wherein R | 01-05-2012 |
20130172345 | 1-ACYL-4-(PHENOXY, BENZYLOXY, OR PHENYLAMINO)-1,2,3,4-TETRAHYDROQUINOLINE DERIVATIVES - Disclosed is a low-molecular-weight compound having an EPO production-promoting activity and/or a hemoglobin expression-enhancing activity. Specifically disclosed is an EPO production promoter and/or a hemoglobin expression enhancer comprising a 1-acyl-4-(phenoxy, benzyloxy or phenylamino)-1,2,3,4-tetrahydroquinoline derivative, more specifically a tetrahydroquinoline compound represented by the general formula (1); | 07-04-2013 |
20140249144 | PROPHYLACTIC AND/OR THERAPEUTIC AGENT FOR ANEMIA COMPRISING TETRAHYDROQUINOLINE COMPOUND AS ACTIVE INGREDIENT - Disclosed is a compound which has a low molecular weight and has an activity of enhancing the production of EPO and/or an activity of enhancing the production of hemoglobin. Specifically disclosed is and EPO production enhancer and/or a hemoglobin production enhancer comprising a 1-acyl-4-(substituted oxy, substituted amino, or substituted thio)-1,2,3,4-tetrahydroquinoline derivative, more specifically a tetrahydroquinoline compound represented by general formula (1) [wherein R | 09-04-2014 |
Patent application number | Description | Published |
20090012128 | MICROBICIDAL AGENT AND MICROBICIDAL COMPOSITION - A microbicidal agent comprising as an effective ingredient at least one selected from the group consisting of p-hydroxybenzaldehyde, 5,7,4′-trihydroxy-3′,5′-dimethoxyflavone, 3-hydroxypyridine and vanillin, and a microbicidal composition comprising the microbicidal agent. | 01-08-2009 |
20100121083 | ANTI-VIRAL AGENT - Provided is an antiviral agent with high antiviral activities and low side effects (cytotoxicity). Specifically provided is an antiviral agent comprising as an effective component at least one member selected from the group consisting of 5,7,4′-trihydroxy-3′,5′-dimethoxyflavone, 3-hydroxypyridine, p-hydroxybenzaldehyde and vanillin. | 05-13-2010 |
20100190846 | MICROBICIDAL AGENT AND MICROBICIDAL COMPOSITION - A method for suppressing the growth of microorganism comprises the steps of providing a microbicidal agent comprising 5,7,4′-trihydroxy-3′,5′-dimethoxyflavone, and contacting the agent with the microorganism, wherein said microorganism is selected from the group consisting of | 07-29-2010 |
20120295939 | ANTI-VIRAL AGENT - A method of suppressing the proliferation of virus comprises administering an antiviral agent comprising as an effective component at least one member selected from the group consisting of 5,7,4′-trihydroxy-3′,5′-dimethoxyflavone, 3-hydroxypyridine, p-hydroxybenzaldehyde and vanillin to one in need of suppressing of viral proliferation. | 11-22-2012 |
20130131121 | ANTI-VIRAL AGENT - A method of suppressing the proliferation of virus comprises administering an antiviral agent comprising as an effective component at least one member selected from the group consisting of 5,7,4′-trihydroxy-3′,5′-dimethoxyflavone, 3-hydroxypyridine, p-hydroxybenzaldehyde and vanillin to one in need of suppressing of viral proliferation. | 05-23-2013 |
Patent application number | Description | Published |
20080211029 | SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME - A semiconductor device which, in spite of the existence of a dummy active region, eliminates the need for a larger chip area and improves the surface flatness of the semiconductor substrate. In the process of manufacturing it, a thick gate insulating film for a high voltage MISFET is formed over an n-type buried layer as an active region and a resistance element IR of an internal circuit is formed over the gate insulating film. Since the thick gate insulating film lies between the n-type buried layer and the resistance element IR, the coupling capacitance produced between the substrate (n-type buried layer) and the resistance element IR is reduced. | 09-04-2008 |
20080220580 | SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME - A method of manufacturing a semiconductor integrated circuit device having on the same substrate both a high breakdown voltage MISFET and a low breakdown voltage MISFET is provided. An element isolation trench is formed in advance so that the width thereof is larger than the sum of the thickness of a polycrystalline silicon film serving as a gate electrode of a low breakdown voltage, the thickness of a gate insulating film and an alignment allowance in processing of a gate electrode in a direction orthogonal to the extending direction of the gate electrode and is larger than the thickness of the polycrystalline silicon film in a planar region not overlapping the gate electrode. It is possible to decrease the number of manufacturing steps for the semiconductor integrated circuit device. | 09-11-2008 |
20090065888 | SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME - The present invention aims to enhance the reliability of a semiconductor device equipped with a Schottky barrier diode within the same chip, and its manufacturing technology. The semiconductor device includes an n-type n-well region formed over a main surface of a p-type semiconductor substrate, an n-type cathode region formed in part thereof and higher in impurity concentration than the n-well region, a p-type guard ring region formed so as to surround the n-type cathode region in circular form, an anode conductor film formed so as to integrally cover the n-type cathode region and the p-type guard ring region and to be electrically coupled thereto, n-type cathode conduction regions formed outside the p-type guard ring region with each separation portion left therebetween, and a cathode conductor film formed so as to cover the n-type cathode conduction regions and to be electrically coupled thereto. The anode conductor film and the n-type cathode region are Schottky-coupled to each other. | 03-12-2009 |
20090206411 | SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME - To provide a technique capable of positioning of a semiconductor chip and a mounting substrate with high precision by improving visibility of an alignment mark. In a semiconductor chip constituting an LCD driver, a mark is formed in an alignment mark formation region over a semiconductor substrate. The mark is formed in the same layer as that of an uppermost layer wiring (third layer wiring) in an integrated circuit formation region. Then, in the lower layer of the mark and a background region surrounding the mark, patterns are formed. At this time, the pattern P | 08-20-2009 |
20100244137 | SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME - A semiconductor device which, in spite of the existence of a dummy active region, eliminates the need for a larger chip area and improves the surface flatness of the semiconductor substrate. In the process of manufacturing it, a thick gate insulating film for a high voltage MISFET is formed over an n-type buried layer as an active region and a resistance element IR of an internal circuit is formed over the gate insulating film. Since the thick gate insulating film lies between the n-type buried layer and the resistance element IR, the coupling capacitance produced between the substrate (n-type buried layer) and the resistance element IR is reduced. | 09-30-2010 |
20110180877 | SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME - To provide a technique capable of positioning of a semiconductor chip and a mounting substrate with high precision by improving visibility of an alignment mark. In a semiconductor chip constituting an LCD driver, a mark is formed in an alignment mark formation region over a semiconductor substrate. The mark is formed in the same layer as that of an uppermost layer wiring (third layer wiring) in an integrated circuit formation region. Then, in the lower layer of the mark and a background region surrounding the mark, patterns are formed. At this time, the pattern P | 07-28-2011 |
20120187520 | Semiconductor Device Comprising A Schottky Barrier Diode - The present invention aims to enhance the reliability of a semiconductor device equipped with a Schottky barrier diode within the same chip, and its manufacturing technology. The semiconductor device includes an n-type n-well region formed over a p-type semiconductor substrate, an n-type cathode region formed in part thereof and higher in impurity concentration than the n-well region, a p-type guard ring region formed so as to surround the n-type cathode region, an anode conductor film formed so as to integrally cover the n-type cathode region and the p-type guard ring region and to be electrically coupled thereto, n-type cathode conduction regions formed outside the p-type guard ring region with each separation portion left therebetween, and a cathode conductor film formed so as to cover the n-type cathode conduction regions and to be electrically coupled thereto. The anode conductor film and the n-type cathode region are Schottky-coupled to each other. | 07-26-2012 |
20120248603 | SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME - To provide a technique capable of positioning of a semiconductor chip and a mounting substrate with high precision by improving visibility of an alignment mark. In a semiconductor chip constituting an LCD driver, a mark is formed in an alignment mark formation region over a semiconductor substrate. The mark is formed in the same layer as that of an uppermost layer wiring (third layer wiring) in an integrated circuit formation region. Then, in the lower layer of the mark and a background region surrounding the mark, patterns are formed. At this time, the pattern P | 10-04-2012 |
20130307036 | SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME - In a semiconductor chip constituting an LCD driver, a mark is formed in an alignment mark formation region over a semiconductor substrate. The mark is formed in the same layer as that of an uppermost layer wiring (third layer wiring) in an integrated circuit formation region. Then, in the lower layer of the mark and a background region surrounding the mark, patterns are formed. At this time, the pattern Pla is formed in the same layer as that of a second layer wiring and the pattern Pib is formed in the same layer as that of a first layer wiring. Further, the pattern P | 11-21-2013 |
20140061847 | SEMICONDUCTOR DEVICE COMPRISING A SCHOTTKY BARRIER DIODE - The present invention aims to enhance the reliability of a semiconductor device equipped with a Schottky barrier diode within the same chip, and its manufacturing technology. The semiconductor device includes an n-type n-well region formed over a p-type semiconductor substrate, an n-type cathode region formed in part thereof and higher in impurity concentration than the n-well region, a p-type guard ring region formed so as to surround the n-type cathode region, an anode conductor film formed so as to integrally cover the n-type cathode region and the p-type guard ring region and to be electrically coupled thereto, n-type cathode conduction regions formed outside the p-type guard ring region with each separation portion left therebetween, and a cathode conductor film formed so as to cover the n-type cathode conduction regions and to be electrically coupled thereto. The anode conductor film and the n-type cathode region are Schottky-coupled to each other. | 03-06-2014 |
20140110789 | SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME - To provide a technique capable of positioning of a semiconductor chip and a mounting substrate with high precision by improving visibility of an alignment mark. In a semiconductor chip constituting an LCD driver, a mark is formed in an alignment mark formation region over a semiconductor substrate. The mark is formed in the same layer as that of an uppermost layer wiring (third layer wiring) in an integrated circuit formation region. Then, in the lower layer of the mark and a background region surrounding the mark, patterns are formed. At this time, the pattern P | 04-24-2014 |
20150155257 | SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME - To provide a technique capable of positioning of a semiconductor chip and a mounting substrate with high precision by improving visibility of an alignment mark. In a semiconductor chip constituting an LCD driver, a mark is formed in an alignment mark formation region over a semiconductor substrate. The mark is formed in the same layer as that of an uppermost layer wiring (third layer wiring) in an integrated circuit formation region. Then, in the lower layer of the mark and a background region surrounding the mark, patterns are formed. At this time, the pattern P1a is formed in the same layer as that of a second layer wiring and the pattern P1b is formed in the same layer as that of a first layer wiring. Further, the pattern P2 is formed in the same layer as that of a gate electrode, and the pattern P3 is formed in the same layer as that of an element isolation region. | 06-04-2015 |
Patent application number | Description | Published |
20130003096 | IMAGING APPARATUS AND IMAGE FORMING APPARATUS - An imaging apparatus for imaging a subject image from a lens on an imaging element through an optical filter has a porous body having pores which three dimensionally communicate with each other at least at a side opposite to the imaging element of the optical filter. | 01-03-2013 |
20130216775 | OPTICAL MEMBER AND IMAGING APPARATUS - Provided is an optical member having high strength, low reflection, and a high transmittance. The optical member includes: a transparent substrate; and a porous glass layer having a spinodal-type porous structure disposed on the transparent substrate, in which at least one of the average pore diameter of a pore formed in the porous glass layer and the average skeleton diameter of a skeleton of the porous glass layer is set so that the optical member has a transmittance of 50% or more in the wavelength region of 450 nm or more and 650 nm or less. | 08-22-2013 |
20130224494 | POROUS GLASS, METHOD OF MANUFACTURING THE SAME AND OPTICAL ELEMENT - This invention provides a porous glass with a varied porous structure that shows an excellent optical performance. A method of manufacturing a porous glass comprising: a first step of forming a surface layer containing a boron compound and an alkali metal compound as main ingredients on a matrix glass containing a silicon oxide, a boron oxide and an alkali metal oxide; a second step of heat treatment the matrix glass and the surface layer for phase separation to form a phase-separated glass; and a third step of acid treatment the phase-separated glass to form the porous glass having pores. | 08-29-2013 |
20130233018 | METHOD OF MANUFACTURING POROUS GLASS - To provide a method of manufacturing a porous glass in which the porosity decreases as a function of the distance from the surface in the direction of depth. A method of manufacturing a porous glass includes a step of bringing one or more than one ion species selected from silver ion, potassium ion and lithium ion into contact with a matrix glass containing borosilicate glass as main ingredient and heating the matrix glass to form a glass body having an ion concentration distribution with a concentration of the one or more than one ion species decreasing as a function of a distance from a surface in a direction of depth, a step of heating and phase-separating the glass body to form a phase-separated glass, and a step of etching the phase-separated glass to form a porous glass having a porosity decreasing as the function of the distance from the surface in the direction of depth. | 09-12-2013 |
20130333419 | METHOD FOR MANUFACTURING POROUS GLASS, AND METHOD FOR MANUFACTURING OPTICAL ELEMENT - A method for manufacturing a porous glass includes: forming a phase-separated glass by heating at a temperature in a range of 300 to 500 degrees Celsius for 3 to 50 hours for phase separation of a glass body in which the concentration of SiO | 12-19-2013 |
20140313391 | IMAGING APPARATUS AND IMAGE FORMING APPARATUS - An imaging apparatus for imaging a subject image from a lens on an imaging element through an optical filter has a porous body having pores which three dimensionally communicate with each other at least at a side opposite to the imaging element of the optical filter. | 10-23-2014 |
Patent application number | Description | Published |
20140293114 | OPTICAL MEMBER, IMAGE PICKUP APPARATUS, AND METHOD FOR MANUFACTURING OPTICAL MEMBER - The present invention provides an optical member including a porous glass film on a base member, wherein a ripple is suppressed. | 10-02-2014 |
20140299573 | METHOD FOR MANUFACTURING OPTICAL MEMBER - The present invention provides a method for producing a porous glass layer easily, wherein a ripple is suppressed. | 10-09-2014 |
20140305166 | METHOD FOR MANUFACTURING OPTICAL MEMBER AND METHOD FOR MANUFACTURING IMAGE PICKUP APPARATUS - The present invention provides an optical member having a high transmittance, wherein a composition change of a phase-separable base material glass film is suppressed. | 10-16-2014 |
20140320728 | OPTICAL MEMBER, IMAGE PICKUP APPARATUS, AND METHOD FOR MANUFACTURING OPTICAL MEMBER - The present invention provides an optical member including a porous glass layer on the base member, wherein a ripple is suppressed. | 10-30-2014 |
20140335346 | OPTICAL MEMBER, IMAGE PICKUP APPARATUS, AND METHOD FOR MANUFACTURING OPTICAL MEMBER - To provide an optical member having a porous glass layer on a substrate and rarely causing ripples. | 11-13-2014 |
20150103406 | OPTICAL MEMBER, IMAGE PICKUP APPARATUS, AND METHOD FOR MANUFACTURING OPTICAL MEMBER - This invention provides an optical member in which ripple is suppressed and a porous glass layer is formed on a base member and also provides a method for easily manufacturing the optical member. | 04-16-2015 |
20150138422 | OPTICAL MEMBER, IMAGE PICKUP APPARATUS, AND METHOD FOR MANUFACTURING OPTICAL MEMBER - To provide an optical member in which crystallization is suppressed and which has a porous glass layer on a base material. | 05-21-2015 |
20150146074 | OPTICAL MEMBER, IMAGE PICKUP APPARATUS, AND METHOD FOR MANUFACTURING OPTICAL MEMBER - An optical member including a porous glass layer on a base member is provided, wherein the reflectance is reduced and a ripple is suppressed. | 05-28-2015 |
20150155475 | PIEZOELECTRIC THIN FILM, METHOD OF MANUFACTURING THE SAME, PIEZOELECTRIC THIN FILM MANUFACTURING APPARATUS AND LIQUID EJECTION HEAD - A piezoelectric thin film is manufactured by sequentially executing: a step of coating a substrate by applying a coating solution containing an organic solvent and a piezoelectric thin film precursor to form a coating layer; a step of evaporating the organic solvent from the coating layer in a windless environment to obtain a dried coating layer containing the piezoelectric thin film precursor; and a step of heating the dried coating layer to form a piezoelectric thin film from the dried coating layer containing the piezoelectric thin film precursor. | 06-04-2015 |
Patent application number | Description | Published |
20110319600 | Human Anti-Human Influenza Virus Antibody - Provided is a human antibody having a neutralization activity against a human influenza virus. More specifically, provided is a human antibody which recognizes a highly conserved region in a human influenza A virus subtype H3N2 or a human influenza B virus and has a neutralization activity against the virus. The human antibody is a human anti-human influenza virus antibody, which has a neutralization activity against a human influenza A virus subtype H3N2 and binds to a hemagglutinin HA1 region of the human influenza A virus subtype H3N2, or which has a neutralization activity against a human influenza B virus, and includes, as a base sequence of a DNA encoding a variable region of the antibody, a sequence set forth in any one of SEQ ID NOS: 5 to 12. | 12-29-2011 |
20120156242 | An Antigenic Peptide Derived From Influenza Virus And A Method For Selecting Anti-Influenza Virus Antibody - Antigenic peptides are provided that can be used to induce global neutralizing antibodies, or antibodies reactive against a wide range of influenza A virus strains. The antigenic peptide can correspond to SEQ ID NO: 34 (EKEVLVLWG), SEQ ID NO: 2 (KFDKLYIWG), SEQ ID NO: 71(QEDLLVLWG), SEQ ID NO: 51 (EGRINYYWTLLEP), SEQ ID NO: 3 (PSRISIYWTIVKP), and/or SEQ ID NO: 82 (SGRMEFFWTILKP). | 06-21-2012 |
20150044225 | Human Anti-Human Influenza Virus Antibody - Provided is a human antibody having a neutralization activity against a human influenza virus. More specifically, provided is a human antibody which recognizes a highly conserved region in a human influenza A virus subtype H3N2 or a human influenza B virus and has a neutralization activity against the virus. The human antibody is a human anti-human influenza virus antibody, which has a neutralization activity against a human influenza A virus subtype H3N2 and binds to a hemagglutinin HA1 region of the human influenza A virus subtype H3N2, or which has a neutralization activity against a human influenza B virus, and includes, as a base sequence of a DNA encoding a variable region of the antibody, a sequence set forth in any one of SEQ ID NOS: 5 to 12. | 02-12-2015 |
Patent application number | Description | Published |
20080300349 | Flame-Retardant Polyester and Process for Producing the Same - To easily obtain a polyester having excellent mechanical properties, a satisfactory hue, and a high degree of flame retardancy. [MEANS FOR SOLVING PROBLEMS] The flame-retardant polyester is a polyester comprising ethylene terephthalate units as the main structural units and a phosphorus compound copolymerized or incorporated therein or is a resin composition comprising polyesters including that polyester. The flame-retardant polyester is characterized in that a polycarboxylic acid and/or polyol having three or more functional groups capable of forming an ester bond is contained in the polyester in a total amount of 0.05-2.00 mol (per 200 mol of the sum of the dicarboxylic acid ingredient and the diol ingredient), that a specific phosphorus compound having a functional group capable of forming an ester bond is contained in the polyester in an amount of 5,000-50,000 ppm of the polyester in terms of phosphorus amount, and that the polyester pellet obtained has a b value of −5 to 20, an L value of 35 or larger, and a melt viscosity at 280° C. of 1,000-20,000 dPa·s. | 12-04-2008 |
20090203871 | METHOD FOR PRODUCING THERMOPLASTIC POLYESTER ELASTOMER, THERMOPLASTIC POLYESTER ELASTOMER COMPOSITION, AND THERMOPLASTIC POLYESTER ELASTOMER - The present invention provides a thermoplastic polyester elastomer excellent in heat resistance, heat-aging resistance, water resistance, light resistance, low-temperature property and the like, and further excellent in block order-retaining ability, the thermoplastic polyester elastomer comprising a hard segment which comprises polyester constituted with aromatic dicarboxylic acid and aliphatic or alicyclic diol and a soft segment which comprises mainly aliphatic polycarbonate, wherein the hard segment and the soft segment being connected, and wherein when melting points of the thermoplastic polyester elastomer are obtained by measuring on a differential scanning calorimeter in three cycles in which a temperature is raised from room temperature to 300° C. at a heating rate of 20° C./min., maintained at 300° C. for 3 minutes and lowered to room temperature at a cooling rate of 100° C./min., a melting point difference (Tm | 08-13-2009 |