Patent application number | Description | Published |
20090147397 | PATTERNED MAGNETIC RECORDING MEDIUM AND METHOD OF RECORDING TRACK INFORMATION ONTO THE SAME - Provided are a patterned magnetic recording medium and a method of recording track information onto the patterned magnetic recording medium. The patterned magnetic recording medium includes: a data sector comprising a plurality of magnetic recording regions which are spaced apart from one another, wherein the magnetic recording regions constitute a plurality of tracks which are each shaped like a ring; and a servo sector comprising servo patterned regions and correction code regions, which are each provided on each of the plurality of tracks, wherein information regarding a track that is to be actually used in a hard disk drive (HDD) is recorded on a correction code region of at least one track of the plurality of tracks. | 06-11-2009 |
20090147402 | PATTERNED MAGNETIC RECORDING MEDIUM AND METHOD OF SELF SERVO WRITING ONTO THE SAME - Provided are a patterned magnetic recording medium and a method of self servo writing in which servo information is written on the patterned magnetic recording medium. The patterned magnetic recording medium includes: a data sector including a plurality of magnetic recording regions spaced apart from one another, wherein the magnetic recording regions constitute a plurality of tracks which are each shaped like a ring; and a servo sector on which servo information regarding the tracks is capable of being written along the tracks, wherein only to a part of the tracks of the servo sector, servo information regarding the part of the tracks is written in the form of a physical servo pattern which is formed by physically patterning a magnetic recording layer. | 06-11-2009 |
20090296280 | MASTER RECORDING MEDIUM HAVING IMPROVED MAGNETIC TRANSFER PERFORMANCE - Provided is a master recording medium suitable for use in magnetic transfer of a servo pattern onto a magnetic recording medium. The master recording medium includes a substrate including a plurality of servo regions and a plurality of data regions, and a magnetic layer formed on each of the servo regions and patterned in the shape of a servo pattern to be patterned on a magnetic recording medium, wherein the servo regions protrude relative to the data regions. | 12-03-2009 |
20090297889 | MASTER RECORDING MEDIUM FOR MAGNETICALLY TRANSFERRING SERVO PATTERN TO THE MAGNETIC RECORDING MEDIUM AND METHOD OF MANUFACTURING THE SAME - Provided are a master recording medium and a method of manufacturing the master recording medium. The master recording medium includes: a plate; and a magnetic layer which is formed on the plate for magnetically transferring of a servo pattern that is to be formed on a magnetic recording medium. The method of manufacturing a master recording medium includes: engraving a polymer layer by nano imprinting to form an engraved pattern corresponding to a servo pattern to be formed on a magnetic recording medium; forming a magnetic layer which fills in the engraved pattern of the polymer layer; forming a back plate layer on the magnetic layer; and performing processing to expose the servo pattern on a surface of the magnetic layer that is opposite a surface of the magnetic layer on which the back plate layer is formed. | 12-03-2009 |
20100002565 | SERVO MASTER MAGNETICALLY TRANSFERRING SERVO PATTERNS TO MAGNETIC RECORDING MEDIUM, AND MAGNETIC TRANSFER METHOD USING THE SERVO MASTER - The servo master includes a membrane having a first surface and a second surface; a plurality of stamp areas which are disposed on the first surface, each of the plurality of stamp areas including a magnetic layer patterned with servo patterns to be magnetically transferred to a magnetic recording medium; and a pressing members which are disposed on the second surface, each of the plurality of pressing members being operable to apply pressure to a corresponding stamp area of the plurality of stamp areas. | 01-07-2010 |
20100273027 | Magnetic printing stamp, method of manufacturing magnetic printing stamp and magnetic printing method - A magnetic printing stamp and a magnetic printing method using the same. The magnetic printing stamp may includes a plurality of servo regions having a magnetic body pattern and a plurality of data regions having no magnetic body pattern that are alternately formed, wherein a thickness of a portion of a substrate corresponding to each of the servo regions is less than a thickness of a portion of the substrate corresponding to each of the data regions. When a servo pattern is to be magnetically printed, the magnetic printing stamp and a magnetic recording medium uniformly and completely come in contact with each other. Thus, the magnetic printing stamp and the magnetic recording medium are prevented from being contaminated or damaged. In addition, excellent magnetic printing properties corresponding to an uneven pattern may be achieved. | 10-28-2010 |
20110001205 | Image sensor and semiconductor device including the same - Example embodiments relate to a three-dimensional image sensor including a color pixel array on a substrate, a distance pixel array on the substrate, an RGB filter on the color pixel array and configured to allow visible light having a first wavelength to pass, a near infrared light filter on the distance pixel array and configured to allow near infrared light having a second wavelength to pass, and a stack type single band filter on the RGB filter and the near infrared light filter and configured to allow light having a third wavelength between the first wavelength and the second wavelength to pass. According to example embodiments, a semiconductor device may include a color pixel array on a substrate; a distance pixel array on the substrate; a light-inducing member on the color pixel array and the distance pixel array; a RGB filter on the light-inducing member and configured to allow visible light to pass; a near infrared light filter on the light-inducing member and configured to allow near infrared light to pass; and a plurality of lenses on the RGB filter and the near infrared light filter. | 01-06-2011 |
20110013055 | Optical sensor and semiconductor device - Example embodiments are directed to a semiconductor device including a color pixel array on a substrate; a distance pixel array on the substrate; a light-inducing member on the color pixel array and the distance pixel array; an infrared light cut filter on the light-inducing member and configured to block infrared light; a near infrared light filter on the light-inducing member and configured to allow near infrared light to pass; and an RGB filter on the light-inducing member and configured to allow visible light to pass. According to example embodiments, a method of manufacturing a semiconductor device may include forming a color pixel array on a substrate; forming a distance pixel array on the substrate; forming a light-inducing member on the color pixel array and the distance pixel array; forming an infrared light cut filter on the light-inducing member; forming a near infrared light filter on the light-inducing member; forming a RGB filter on the light-inducing member; and forming a plurality of lenses on the infrared light cut filter and the near infrared light filter. | 01-20-2011 |
20110102547 | Three-Dimensional Image Sensors and Methods of Manufacturing the Same - Image sensors include three-dimensional (3D) color image sensors having an array of sensor pixels therein. A 3-D color image sensor may include a 3-D image sensor pixel having a plurality of color sensors and a depth sensor therein. The plurality of color sensors may include red, green and blue sensors extending adjacent the depth sensor. A rejection filter is also provided. This rejection filter, which extends opposite a light receiving surface of the 3-D image sensor pixel, is configured to be selectively transparent to visible and near-infrared light relative to far-infrared light. The depth sensor may also include an infrared filter that is selectively transparent to near-infrared light having wavelengths greater than about 700 nm relative to visible light. | 05-05-2011 |
20130093911 | IMAGE SENSOR, ELECTRONIC DEVICE INCLUDING THE SAME, AND IMAGE SENSING METHOD - An image sensor and an image sensing method are provided. The image sensor includes a semiconductor substrate; a photoelectric converter comprising a bias unit, which comprises a first electrode and a second electrode, and an organic photoelectric conversion layer, which selectively absorbs light and converts the light into electrons; a via contacting the second electrode to connect the photoelectric converter with the semiconductor substrate; a storage node configured to store electrons; a read-out unit to converts charge transferred from the storage node into an image signal; a pixel array comprising a plurality of pixels, each of which comprises an intermediate insulating layer; and an output circuit configured to read out the image signal from the pixel array. The quantity of light received by the organic photoelectric conversion layer is adjusted by a bias change of the bias unit. | 04-18-2013 |
20130093932 | ORGANIC PIXELS INCLUDING ORGANIC PHOTODIODE, MANUFACTURING METHODS THEREOF, AND APPARATUSES INCLUDING THE SAME - Provided is an organic pixel, which includes a semiconductor substrate including a pixel circuit, an interconnection layer having a first contact and a first electrode formed on a semiconductor substrate, and an organic photo-diode formed on the interconnection layer. For example, the organic photo-diode includes an insulation layer formed on the first electrode, a second electrode and a photo-electric conversion region formed between the first contact, the insulation layer and the second electrode. The photo-electric conversion region includes an electron donating organic material and an electron accepting organic material. The organic photo-diode may further include a second contact electrically connected to the first contact. The horizontal distance between the second contacts and the insulation layer may be less than or equal to a few micrometers, for example, 10 micrometers. | 04-18-2013 |
20130320309 | ORGANIC IMAGE SENSOR WITH OPTICAL BLACK REGIONS - An organic image sensor includes a first organic photoelectric conversion pixel circuit on an active region of a substrate and a second organic photoelectric conversion pixel circuit on an optical black region of the substrate. The first organic photoelectric conversion pixel circuit includes a first organic photoelectric conversion element configured to generate charges responding to incident light and a first readout circuit configured to receive a first input signal including the charges generated in the first organic photoelectric conversion element. The second organic photoelectric conversion pixel circuit includes a second organic photoelectric conversion element and a second readout circuit configured to receive a second input signal generated irrespective of the incident light. | 12-05-2013 |
20140103192 | BINARY CMOS IMAGE SENSORS, METHODS OF OPERATING SAME, AND IMAGE PROCESSING SYSTEMS INCLUDING SAME - A binary complementary metal-oxide-semiconductor (CMOS) image sensor includes a pixel array and a readout circuit. The pixel array includes at least one pixel having a plurality of sub-pixels. The readout circuit is configured to quantize a pixel signal output from the pixel using a reference signal. The pixel signal corresponds to sub-pixel signals output from sub-pixels, from among the plurality of sub-pixels, activated in response to incident light. | 04-17-2014 |
20140103401 | IMAGE SENSOR - An image sensor is provided. The image sensor includes a well of a second conductivity type formed on an impurity layer of a first conductivity type, source and drain regions of the first conductivity type, formed in the well to be spaced apart from each other, a first photo diode of the first conductivity type formed in the well to overlap the source and drain regions, a second photo diode of the first conductivity type formed so as not to overlap the source and drain regions and formed to be adjacent to the first photo diode, and a gate electrode formed on the first and second photo diodes. | 04-17-2014 |
20140103413 | CMOS IMAGE SENSORS WITH PHOTOGATE STRUCTURES AND SENSING TRANSISTORS, OPERATION METHODS THEREOF, AND IMAGE PROCESSING SYSTEMS INCLUDING THE SAME - ACMOS image sensor includes a pixel array having a plurality of pixels. Each of the plurality of pixels includes: a photogate structure configured to be controlled based on a first gate voltage; and a sensing transistor including a charge pocket region formed in a substrate region, the sensing transistor being configured to be controlled based on a second gate voltage. Based on the first gate voltage, the photogate structure is configured to integrate charges generated in response to light incident on the substrate region. The sensing transistor is configured to adjust at least one of a threshold voltage of the sensing transistor and a current flow in the sensing transistor according to charges transferred from the photogate structure to the charge pocket region based on a difference between the first gate voltage and the second gate voltage. | 04-17-2014 |
20140104452 | SUB-PIXELS, IMAGE SENSORS HAVING THE SAME AND IMAGE SENSING SYSTEMS - A sub pixel includes a photodetector and a column line output circuit. The photodetector is configured to output an electrical signal based on a detected amount of photons. The column line output circuit is configured to generate an output signal based on the electrical signal. The output signal is one of a current from a current source and a comparison signal indicative of binary output data. | 04-17-2014 |
20140104469 | IMAGE SENSORS, IMAGE PROCESSING SYSTEMS INCLUDING THE SAME, AND METHODS OF OPERATING IMAGE PROCESSING SYSTEM - An image sensor includes a pixel array and a row driver block. The pixel array includes a plurality of subpixel groups, each including a plurality of subpixels. Each of the plurality of subpixels is configured to generate a subpixel signal corresponding to photocharge accumulated in response to a photon. The row driver block is configured to generate a first control signal to control the subpixels included in each of the plurality of subpixel groups to accumulate the photocharge in parallel from a first time point to a second time point. | 04-17-2014 |
20140104473 | IMAGE SENSOR CHIPS - An image sensor chip includes a first wafer and a second wafer. The first wafer includes an image sensor having a plurality of sub-pixels, each of which is configured to detect at least one photon and output a sub-pixel signal according to a result of the detection. The image processor is configured to process sub-pixel signals for each sub-pixel and generate image data. The first wafer and the second wafer are formed in a wafer stack structure. | 04-17-2014 |
20140313383 | IMAGE SENSOR AND COMPUTING SYSTEM HAVING THE SAME - An image sensor includes a photoelectric conversion unit, a signal generation unit, and a feedback unit. The photoelectric conversion unit is formed above a substrate and detects incident light to generate photo-charges based on a drive voltage. The signal generation unit is formed on the substrate and generates an analog signal based on the photo-charges. The feedback unit generates the drive voltage based on an amount of the photo-charges generated from the photoelectric conversion unit. The image sensor may perform a wide dynamic range (WDR) function. | 10-23-2014 |
20140375826 | IMAGE SENSOR, METHOD FOR MANUFACTURING THE SAME, AND IMAGE PROCESSING DEVICE HAVING THE IMAGE SENSOR - An image sensor comprising: a first layer having a plurality of groups of photodiodes formed in a semiconductor substrate, each group representing a 2×2 array of photodiodes, with 2 first pixels configured to detect light of a first wavelength and 2 second pixels configured to detect light of a second wavelength, each first pixel positioned adjacent to the second pixels; and a second layer overlapping the first layer, the second layer is organic, having a plurality of organic photodiodes configured to detect light of a third wavelength, each organic photodiode positioned to partially overlap 2 first photodiodes and 2 second photodiodes of the first layer. | 12-25-2014 |
20150029365 | UNIT PIXEL OF IMAGE SENSOR AND IMAGE SENSOR HAVING THE SAME - A unit pixel is provided. The unit pixel includes photoelectric converters stacked on each other and configured to generate photo-charges in response to light signals within respective wavelength ranges and provide the photo-charges to respective storage nodes; memories configured to concurrently receive and store the photo-charges from the respective storage nodes in response to a common control signal; and a signal generator that generates analog signals based on the photo-charges stored in the memories, respectively. | 01-29-2015 |
20150054995 | ORGANIC PIXELS INCLUDING ORGANIC PHOTODIODE, MANUFACTURING METHODS THEREOF, AND APPARATUSES INCLUDING THE SAME - Provided is an organic pixel, which includes a semiconductor substrate including a pixel circuit, an interconnection layer having a first contact and a first electrode formed on a semiconductor substrate, and an organic photo-diode formed on the interconnection layer. For example, the organic photo-diode includes an insulation layer formed on the first electrode, a second electrode and a photo-electric conversion region formed between the first contact, the insulation layer and the second electrode. The photo-electric conversion region includes an electron donating organic material and an electron accepting organic material. The organic photo-diode may further include a second contact electrically connected to the first contact. The horizontal distance between the second contacts and the insulation layer may be less than or equal to a few micrometers, for example, 10 micrometers. | 02-26-2015 |