Patent application number | Description | Published |
20100308316 | Electronic Device Having an Electrode With Enhanced Injection Properties - An electronic device having an electrode with enhanced injection properties comprising a first electrode and a first layer of cross-linked molecular charge transfer material on the first electrode. The cross-linked molecular charge transfer material may be an acceptor, which may consist of at least one of: TNF, TN9(CN)2F, TeNF, TeCIBQ, TCNB, DCNQ, and TCAQ. The cross-linked molecular charge transfer material may also be a donor, which may consist of at least one of: Terpy, Ru(terpy)2 TTN, and crystal violet. | 12-09-2010 |
20120325144 | Electronic Device Having an Electrode with Enhanced Injection Properties - An electronic device having an electrode with enhanced injection properties comprising a first electrode and a first layer of cross-linked molecular charge transfer material on the first electrode. The cross-linked molecular charge transfer material may be an acceptor, which may consist of at least one of: TNF, TN9(CN)2F, TeNF, TCNB, DCNQ, and TCAQ. The cross-linked molecular charge transfer material may also be a donor, which may consist of at least one of: Terpy, Ru(terpy)2 TTN, and crystal violet. | 12-27-2012 |
Patent application number | Description | Published |
20080220561 | MELT-BASED PATTERNING FOR ELECTRONIC DEVICES - The present invention provides methods and apparatus for melt-based patterning for electronic devices. It employs and provides processes and apparatus for fabricating an electronic device having a pattern formed on a surface by a deposition material. Further, the invention a process for fabricating semiconductors, organic light-emitting devices (OLEDs), field-effect transistors, and in particular high-resolution patterning for RGB displays. A process for fabricating an organic electronic device includes the steps of heating and applying a pressure to the deposition material to form a melt, and depositing the melted deposition material on the surface with a phase-change printing technique or a spray technique. The melted deposition material solidifies on the surface. | 09-11-2008 |
20080251777 | Field Effect Device with a Channel with a Switchable Conductivity - A field effect device includes a source electrode, a drain electrode, a channel formed between the source electrode and the drain electrode, and a gate electrode formed directly on the channel and arranged in a gap between the source electrode and the drain electrode. The channel includes a switching material that is reversibly switchable between a lower conductivity state and a higher conductivity state. The first conductivity state has an electrical conductivity which is lower than an electrical conductivity of the second conductivity state. Each of the conductivity states is persistent without the need for a sustaining excitation signal including an electrical field, heat and/or light applied to the device. | 10-16-2008 |
20090200540 | Metal-Oxide-Semiconductor Device Including a Multiple-Layer Energy Filter - A MOS device includes first and second source/drains spaced apart relative to one another. A channel is formed in the device between the first and second source/drains. A gate is formed in the device between the first and second source/drains and proximate the channel, the gate being electrically isolated from the first and second source/drains and the channel. The gate is configured to control a conduction of the channel as a function of a potential applied to the gate. The MOS device further includes an energy filter formed between the first source/drain and the channel. The energy filter includes a superlattice structure wherein a mini-band is formed. The energy filter is operative to control an injection of carriers from the first source/drain into the channel. The energy filter, in combination with the first source/drain, is configured to produce an effective zero-Kelvin first source/drain. | 08-13-2009 |
20090200605 | Metal-Oxide-Semiconductor Device Including an Energy Filter - A MOS device includes first and second source/drains spaced apart relative to one another. A channel is formed in the device between the first and second source/drains. A gate is formed in the device between the first and second source/drains and proximate the channel, the gate being electrically isolated from the first and second source/drains and the channel. The gate is configured to control a conduction of the channel as a function of a potential applied to the gate. The MOS device further includes an energy filter formed between the first source/drain and the channel. The energy filter includes an impurity band operative to control an injection of carriers from the first source/drain into the channel. | 08-13-2009 |
20090273011 | Metal-Oxide-Semiconductor Device Including an Energy Filter - A MOS device includes first and second source/drains spaced apart relative to one another. A channel is formed in the device between the first and second source/drains. A gate is formed in the device between the first and second source/drains and proximate the channel, the gate being electrically isolated from the first and second source/drains and the channel. The gate is configured to control a conduction of the channel as a function of a potential applied to the gate. The MOS device further includes an energy filter formed between the first source/drain and the channel. The energy filter includes an impurity band operative to control an injection of carriers from the first source/drain into the channel. | 11-05-2009 |
20100001301 | ORGANIC LIGHT EMITTING DEVICE, METHOD FOR PRODUCING THEREOF AND ARRAY OF ORGANIC LIGHT EMITTING DEVICES - The present invention is directed to an organic light emitting device (OLED) including a first electrode, a second electrode, at least one layer of organic material arranged between the first electrode and the second electrode, and a dielectric capping layer arranged on the second electrode opposite to the first electrode, wherein the capping layer comprises an outer surface, opposite to the second electrode, for emission of light generated in the at least one layer of organic material. The capping layer has the effect that a reflectance of external light is reduced whereas outcoupling of the light generated in the at least one layer of organic material through the capping layer is increased. | 01-07-2010 |
20130284598 | METHODS AND APPARATUSES FOR POSITIONING NANO-OBJECTS WITH ASPECT RATIOS - A method for positioning nano-objects on a surface and an apparatus for implementing the method. The method includes: providing a first surface and a second surface in a position facing each other, where one or more of the surfaces exhibits one or more position structures having dimensions on the nanoscale; providing an ionic liquid suspension of the nano-objects between the two surfaces, where the suspension comprises two electrical double layers each formed at an interface with a respective one of the two surfaces, and the surfaces have electrical charges of the same sign; enabling the nano-objects in the suspension to position according to a potential energy resulting from the electrical charge of the two surfaces; and depositing one or more of the nano-objects on the first surface according to the positioning structures by shifting the minima of the potential energy towards the first surface. | 10-31-2013 |
Patent application number | Description | Published |
20090146133 | HYBRID SEMICONDUCTOR STRUCTURE - A method for the fabrication of a semiconductor structure that includes areas that have different crystalline orientation and semiconductor structure formed thereby. The disclosed method allows fabrication of a semiconductor structure that has areas of different semiconducting materials. The method employs templated crystal growth using a Vapor-Liquid-Solid (VLS) growth process. A silicon semiconductor substrate having a first crystal orientation direction is etched to have an array of holes into its surface. A separation layer is formed on the inner surface of the hole for appropriate applications. A growth catalyst is placed at the bottom of the hole and a VLS crystal growth process is initiated to form a nanowire. The resultant nanowire crystal has a second different crystal orientation which is templated by the geometry of the hole. | 06-11-2009 |
20090258166 | DEVICE AND METHOD FOR PATTERNING STRUCTURES ON A SUBSTRATE - A device for patterning structures on a substrate includes an imaging device having a scanning tip, a light emitting device, and a space around the scanning tip. The space comprises a vapour of a material which is suitable for Chemical Vapour Deposition onto the substrate when decomposed. The light emitting device is adapted to emit a light beam, which has an intensity not capable to decompose the vapour, onto the scanning tip in such a way that an electromagnetic field induced by the light beam near the scanning tip is high enough to decompose the vapour. | 10-15-2009 |
20100072460 | NANOELECTRONIC DEVICE - An electronic device and method of manufacturing the device. The device includes a semiconducting region, which can be a nanowire, a first contact electrically coupled to the semiconducting region, and at least one second contact capacitively coupled to the semiconducting region. At least a portion of the semiconducting region between the first contact and the second contact is covered with a dipole layer. The dipole layer can act as a local gate on the semiconducting region to enhance the electric properties of the device. | 03-25-2010 |
20120280292 | SEMICONDUCTOR DEVICES WITH SCREENING COATING TO INHIBIT DOPANT DEACTIVATION - A semiconductor device and a method for fabricating the semiconductor device. The device includes: a doped semiconductor having a source region, a drain region, a channel between the source and drain regions, and an extension region between the channel and each of the source and drain regions; a gate formed on the channel; and a screening coating on each of the extension regions. The screening coating includes: (i) an insulating layer that has a dielectric constant that is no greater than about half that of the extension regions and is formed directly on the extension regions, and (ii) a screening layer on the insulating layer, where the screening layer screens the dopant ionization potential in the extension regions to inhibit dopant deactivation. | 11-08-2012 |