Patent application number | Description | Published |
20100133480 | CARBON-NANOTUBE N-DOPING MATERIAL AND METHODS OF MANUFACTURE THEREOF - A compound containing at least two pyridinium derivatives in its molecular structure and being in a reduced form thereof may be used as a CNT n-doping material. The compound may donate electrons spontaneously to CNTs to n-dope the CNTs, while being oxidized into its stable state. An n-doped CNT that is doped with the CNT n-doping material may maintain a stable n-doped state for a long time without being dedoped even in the air and/or water. Further, the n-doped state may be easily controlled when using the CNT n-doping material. | 06-03-2010 |
20100279001 | CARBON NANO-TUBE (CNT) THIN FILM TREATED WITH CHEMICAL HAVING ELECTRON WITHDRAWING FUNCTIONAL GROUP AND MANUFACTURING METHOD THEREOF - Disclosed are a carbon nano-tube (CNT) thin film treated with chemical having an electron withdrawing functional group and a manufacturing method thereof. Specifically, the CNT thin film comprises a CNT composition to be applied on a plastic substrate. The CNT composition comprises a CNT; and chemical connected to the CNT and having an electron withdrawing functional group. In addition, the method for manufacturing a CNT thin film comprises steps of preparing a CNT; treating the CNT with chemical having an electron withdrawing functional group; mixing the CNT treated with the chemical with a dispersing agent or dispersing solvent to prepare a CNT dispersed solution; and forming a CNT thin film with the CNT dispersed solution. According to the CNT thin film and the manufacturing method thereof, a resistance of an electrode is decreased to improve the electric conductivity of the electrode. | 11-04-2010 |
20120228557 | CARBON-NANOTUBE N-DOPING MATERIAL AND METHODS OF MANUFACTURE THEREOF - A compound containing at least two pyridinium derivatives in its molecular structure and being in a reduced form thereof may be used as a CNT n-doping material. The compound may donate electrons spontaneously to CNTs to n-dope the CNTs, while being oxidized into its stable state. An n-doped CNT that is doped with the CNT n-doping material may maintain a stable n-doped state for a long time without being dedoped even in the air and/or water. Further, the n-doped state may be easily controlled when using the CNT n-doping material. | 09-13-2012 |
20150364708 | PLASMONIC ORGANIC PHOTOVOLTAIC CELL USING INDUCED DIPOLE POLYMER-METAL NANOPARTICLE HYBRID AND FABRICATION PROCESS THEREOF - The present invention relates to a high-efficiency organic photovoltaic cell using surface plasmon effect of an induced dipole polymer-metal nanoparticle hybrid and a method for fabricating the same. More particularly, it relates to a high-efficiency organic photovoltaic cell whose photoelectric efficiency is maximized by depositing an induced dipole polymer-metal nanoparticle hybrid in or on a hole injection layer, thereby enhancing surface plasmonic properties, and a method for fabricating the same. | 12-17-2015 |
Patent application number | Description | Published |
20150267049 | THERMOPLASTIC POLYESTER ELASTOMER RESIN COMPOSITION AND MOLDING ARTICLES COMPRISING THE SAME - Disclosed are a thermoplastic polyester elastomer resin composition and a molded article comprising the same. More specifically, disclosed is a thermoplastic polyester elastomer resin composition which comprises a glycidyl-modified ethylene-octene copolymer resin, as a chain extension/hydrolysis resistance agent for blown and extrusion molding to improve melt viscosity, and increases a molecular weight through reaction extrusion and thus exhibits superior heat resistance, weather resistance, heat aging resistance, hydrolysis resistance, fatigue resistance, melt viscosity and parison stability, and in particular, exhibits superior blow molding, causes no gelation, and reduces production of odor-causing substances such as volatile organic compounds (TVOC) during blow molding, thereby making a balance between physical properties, molding property and operation environments. | 09-24-2015 |
20160024303 | FIRE RETARDANT THERMOPLASTIC RESIN COMPOSITION AND ELECTRIC WIRE COMPRISING THE SAME (As Amended) - Disclosed are a fire retardant thermoplastic resin composition suitable for preparing an electric wire, etc. by enhancing extrudability of a resin composition without hindering fire retardancy of the resin composition, and an electric wire comprising the same. The fire retardant thermoplastic resin composition comprises a matrix resin that comprises 20 to 35% by weight of a poly arylene ether resin, 20 to 35% by weight of a vinyl aromatic resin and 5 to 20% by weight of an olefin-based resin comprising a rubber ingredient, 1 to 10% by weight of a room-temperature liquid-type fire retardant, and 8 to 20% by weight of an ancillary fire retardant, based on 100% by weight of a mixture of a poly arylene ether resin, a vinyl aromatic resin, an olefin-based resin, a room-temperature liquid-type fire retardant and an ancillary fire retardant. | 01-28-2016 |
Patent application number | Description | Published |
20090146132 | NITRIDE SEMICONDUCTOR DEVICE - There is provided a nitride semiconductor device including: an n-type nitride semiconductor layer; a p-type nitride semiconductor layer; and an active layer formed between the n-type and p-type nitride semiconductor layers, the active layer including a plurality of quantum well layers and at least one quantum barrier layer deposited alternately with each other, wherein the active layer includes a first quantum well layer, a second quantum well layer formed adjacent to the first quantum well layer toward the p-type nitride semiconductor layer and having a quantum level higher than a quantum level of the first quantum well layer, and a tunneling quantum barrier layer formed between the first and second quantum well layers and having a thickness enabling a carrier to be tunneled therethrough. | 06-11-2009 |
20090258453 | METHOD FABRICATING NITRIDE-BASED COMPOUND LAYER, GaN SUBSTRATE AND VERTICAL STRUCTURE NITRIDE-BASED SEMICONDUCTOR LIGHT EMITTING DEVICE - In a method for fabricating a nitride-based compound layer, first, a GaN substrate is prepared. A mask layer with a predetermined pattern is formed on the GaN substrate to expose a partial area of the GaN substrate. Then a buffer layer is formed on the partially exposed GaN substrate. The buffer layer is made of a material having a 10% or less lattice mismatch with GaN. Thereafter, the nitride-based compound is grown laterally from a top surface of the buffer layer toward a top surface of the mask layer and the nitride-based compound layer is vertically grown to a predetermined thickness. Also, the mask layer and the buffer layer are removed via wet-etching to separate the nitride-based compound layer from the GaN substrate. | 10-15-2009 |
20090278113 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE - There is provided a nitride semiconductor light emitting device. A nitride semiconductor light emitting device according to an aspect of the invention may include: an n-type nitride semiconductor layer provided on a substrate; an active layer provided on the n-type nitride semiconductor layer, and including quantum barrier layers and quantum well layers; and a p-type nitride semiconductor layer provided on the active layer, wherein each of the quantum barrier layers includes a plurality of In | 11-12-2009 |
20100105159 | NITRIDE SEMICONDUCTOR SINGLE CRYSTAL SUBSTRATE, AND METHODS OF FABRICATING THE SAME AND A VERTICAL NITRIDE SEMICONDUCTOR LIGHT EMITTING DIODE USING THE SAME - A nitride semiconductor single crystal substrate, a manufacturing method thereof and a method for manufacturing a vertical nitride semiconductor device using the same. According to an aspect of the invention, in the nitride semiconductor single crystal substrate, upper and lower regions are divided along a thickness direction, the nitride single crystal substrate having a thickness of at least 100 μm. Here, the upper region has a doping concentration that is five times or greater than that of the lower region. Preferably, a top surface of the substrate in the upper region has Ga polarity. Also, according to a specific embodiment of the invention, the lower region is intentionally un-doped and the upper region is n-doped. Preferably, each of the upper and lower regions has a doping concentration substantially identical in a thickness direction. | 04-29-2010 |
20100176374 | NITRIDE SEMICONDUCTOR DEVICE - A nitride semiconductor device according to an aspect of the invention may include: first and second conductive nitride semiconductor layers; and an active layer having a DH structure located between the first and second conductive nitride semiconductor layers, and including a single quantum well structure active layer having the single quantum well structure includes at least one polarization relaxation layer formed of a nitride single crystal having a higher energy band gap than the quantum well. | 07-15-2010 |
20100190968 | OLEANANE TRITERPENE SAPONIN COMPOUNDS WHICH ARE EFFECTIVE ON TREATMENT OF DEMENTIA AND MILD COGNITIVE IMPAIRMENT (MCI) AND IMPROVEMENT OF COGNITIVE FUNCTION - The present invention relates to the use of oleanane-type triterpene saponin compounds, which are effective for improving memory and learning ability, as an effective ingredient of drugs for the treatment and prevention of dementia and mild cognitive impairment and health foods for the improvement of brain functions including cognitive function. | 07-29-2010 |
20110186815 | NITRIDE SEMICONDUCTOR DEVICE - There is provided a nitride semiconductor device including: an n-type nitride semiconductor layer; a p-type nitride semiconductor layer; and an active layer formed between the n-type and p-type nitride semiconductor layers, the active layer including a plurality of quantum well layers and at least one quantum barrier layer deposited alternately with each other, wherein the active layer includes a first quantum well layer, a second quantum well layer formed adjacent to the first quantum well layer toward the p-type nitride semiconductor layer and having a quantum level higher than a quantum level of the first quantum well layer, and a tunneling quantum barrier layer formed between the first and second quantum well layers and having a thickness enabling a carrier to be tunneled therethrough. | 08-04-2011 |
20130030174 | COMPOSITION FOR REDUCING SKIN WRINKLES INCLUDING PDE5 INHIBITOR - Disclosed is a composition effective in reducing skin wrinkles. The composition comprises or uses a phosphodiesterase 5 (PDE5) inhibitor as an active ingredient. Further disclosed is a method for reducing skin wrinkles using the composition. | 01-31-2013 |
20140179701 | COMPOSITION FOR REDUCING SKIN WRINKLES INCLUDING PDE5 INHIBITOR - Disclosed is a composition effective in reducing skin wrinkles. The composition comprises or uses a phosphodiesterase 5 (PDE5) inhibitor as an active ingredient. Further disclosed is a method for reducing skin wrinkles using the composition. | 06-26-2014 |
20140187775 | COMPOSITION FOR REDUCING SKIN WRINKLES INCLUDING PDE5 INHIBITOR - Disclosed is a composition effective in reducing skin wrinkles. The composition comprises a phosphodiesterase 5 (PDE5) inhibitor, preferably the compound of chemical formula 1, more preferably, mirodenafil as an active ingredient. Further disclosed is a method for reducing skin wrinkles using the composition. | 07-03-2014 |
Patent application number | Description | Published |
20100233540 | LITHIUM IRON PHOSPHATE HAVING OLIVINE STRUCTURE AND METHOD FOR PREPARING THE SAME - Provided is an olivine-type lithium iron phosphate composed of secondary particles having a mean particle diameter (D | 09-16-2010 |
20100239909 | CATHODE MIX CONTAINING HAVING IMPROVED EFFICIENCY AND ENERGY DENSITY OF ELECTRODE - Provided is a cathode mix for lithium secondary batteries, comprising a cathode active material having a composition represented by the following Formula I: LiFe(P | 09-23-2010 |
20100261060 | LITHIUM IRON PHOSPHATE HAVING OLIVINE STRUCTURE AND METHOD FOR ANALYZING THE SAME - Provided is an olivine-type lithium iron phosphate having a composition represented by Formula I, comprising 0.1 to 5% by weight of Li | 10-14-2010 |
20110229773 | Non-Aqueous Electrolyte And Electrochemical Device Comprising The Same - Disclosed is a non-aqueous electrolyte comprising: an acrylate compound; a sulfinyl group-containing compound; an organic solvent; and an electrolyte salt. Also, disclosed is an electrode comprising a coating layer formed partially or totally on a surface thereof, the coating layer comprising: (i) a reduced form of an acrylate compound; and (ii) a reduced form of a sulfinyl group-containing compound. Further, disclosed is an electrochemical device comprising a cathode, an anode and a non-aqueous electrolyte, wherein (i) the non-aqueous electrolyte is the aforementioned non-aqueous electrolyte; and/or (ii) the cathode and/or the anode is the aforementioned electrode. | 09-22-2011 |
20110287315 | CATHODE ACTIVE MATERIAL PROVIDING IMPROVED EFFICIENCY AND ENERGY DENSITY OF ELECTRODE - Provided is a cathode active material having a composition represented by the following Formula I: LiFe(P | 11-24-2011 |
20120097905 | CATHODE BASED UPON TWO KINDS OF COMPOUNDS AND LITHIUM SECONDARY BATTERY COMPRISING THE SAME - Provided is a cathode for lithium secondary batteries comprising a combination of one or more compounds selected from Formula 1 and one or more compounds selected from Formula 2. The cathode provides a high-power lithium secondary battery composed of a non-aqueous electrolyte which exhibits long lifespan, long-period storage properties and superior stability at ambient temperature and high temperatures. | 04-26-2012 |
20120112139 | CATHODE BASED UPON TWO KINDS OF COMPOUNDS AND LITHIUM SECONDARY BATTERY COMPRISING THE SAME - Provided is a cathode for lithium secondary batteries comprising a combination of one or more compounds selected from Formula 1 and one or more compounds selected from Formula 2. The cathode provides a high power lithium secondary battery composed of a non-aqueous electrolyte which exhibits long lifespan, long-period storage properties and superior stability at ambient temperature and high temperatures. | 05-10-2012 |
20130065118 | CATHODE ACTIVE MATERIAL AND LITHIUM SECONDARY BATTERY COMPRISING THE SAME - Disclosed herein is a cathode active material for a secondary battery, which includes a combination of one or more selected from compounds represented by Formula 1, one or more selected from compounds represented by Formula 2, and one or more selected from compounds represented by Formula 3, | 03-14-2013 |
20130171518 | CATHODE ACTIVE MATERIAL FOR SECONDARY BATTERIES - Disclosed is a cathode active material represented by the following Formula 1, the cathode active material being in the form of a solid solution or a composite, and a secondary battery including the cathode active material. | 07-04-2013 |
20130228725 | CATHODE BASED UPON TWO KINDS OF COMPOUNDS AND LITHIUM SECONDARY BATTERY COMPRISING THE SAME - Provided is a cathode for lithium secondary batteries comprising a combination of one or more compounds selected from Formula 1 and one or more compounds selected from Formula 2. The cathode provides a high-power lithium secondary battery composed of a non-aqueous electrolyte which exhibits long lifespan, long-period storage properties and superior stability at ambient temperature and high temperatures. | 09-05-2013 |
20130292604 | CATHODE BASED UPON TWO KINDS OF COMPOUNDS AND LITHIUM SECONDARY BATTERY COMPRISING THE SAME - Provided is a cathode for lithium secondary batteries comprising a combination of one or more compounds selected from Formula 1 and one or more compounds selected from Formula 2. The cathode provides a high power lithium secondary battery composed of a non-aqueous electrolyte which exhibits long lifespan, long-period storage properties and superior stability at ambient temperature and high temperatures. | 11-07-2013 |
20150140447 | NON-AQUEOUS ELECTROLYTE AND ELECTROCHEMICAL DEVICE COMPRISING THE SAME - Disclosed is a non-aqueous electrolyte comprising: an acrylate compound; a sulfinyl group-containing compound; an organic solvent; and an electrolyte salt. Also, disclosed is an electrode comprising a coating layer formed partially or totally on a surface thereof, the coating layer comprising: (i) a reduced form of an acrylate compound; and (ii) a reduced form of a sulfinyl group-containing compound. Further, disclosed is an electrochemical device comprising a cathode, an anode and a non-aqueous electrolyte, wherein (i) the non-aqueous electrolyte is the aforementioned non-aqueous electrolyte; and/or (ii) the cathode and/or the anode is the aforementioned electrode. | 05-21-2015 |