Theodore T.
Theodore T. Pekny US
Patent application number | Description | Published |
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20110159645 | METHODS OF FORMING A MEMORY ARRAY WITH A PAIR OF MEMORY-CELL STRINGS TO A SINGLE CONDUCTIVE PILLAR - A method of forming a memory array includes forming first and second strings of serially-coupled memory cells respectively on first and second sides of a conductive pillar. Forming the first string of memory cells includes forming a first control gate on the first side of the conductive pillar and interposing a first charge trap between the first side of the conductive pillar and the first control gate. Forming the second string of memory cells comprises forming a second control gate on the second side of the conductive pillar and interposing a second charge trap between the second side of the conductive pillar and the second control gate. The first and second charge traps are electrically isolated from each other, and the first and second control gates are electrically isolated from each other. | 06-30-2011 |
Theodore T. Pekny, Milpitas, CA US
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20120294085 | MULTI-PARTITION ARCHITECTURE FOR MEMORY - A multiple partition memory and architecture for concurrent operations reduces circuit overhead by providing a common read sense amplifier and program path for multiple partitions. Long separate datalines for read and algorithm operations allow concurrent operation and blockout of multiple operations in a single block of the memory. | 11-22-2012 |
Theodore T. Pekny, San Jose, CA US
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20160048343 | APPARATUSES AND METHODS FOR CONCURRENTLY ACCESSING DIFFERENT MEMORY PLANES OF A MEMORY - Apparatuses and methods for performing concurrent memory access operations for different memory planes are disclosed herein. An example apparatus may include a memory array having a plurality of memory planes. Each of the plurality of memory planes comprises a plurality of memory cells. The apparatus may further include a controller configured to receive a group of memory command and address pairs. Each memory command and address pair of the group of memory command and address pairs may be associated with a respective memory plane of the plurality of memory planes. The internal controller may be configured to concurrently perform memory access operations associated with each memory command and address pair of the group of memory command and address pairs of the group of memory command and address pairs regardless of page types associated with the pairs of the group (e.g., even if two or more of the memory command and address pairs may be associated with different page types). | 02-18-2016 |
Theodore T. Thoeny, Bautista, CA US
Patent application number | Description | Published |
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20090145046 | INFLATABLE STRUCTURES - A method of forming a building structure in a desired contoured configuration. An inner supporting fabric is inflated into at least one form. An outer finishing fabric is draped over the inflated form. A coating is applied to the outer finishing fabric and a hardening shell is formed. The inner supporting fabric may be removed. Alternately, inflatable bags, posts, cables and other devices are disposed under the outer finishing fabric to produce the desired contoured configuration. These devices are removed after the coating has cured. | 06-11-2009 |
Theodore T. Tsotsis, Huntington Beach, CA US
Patent application number | Description | Published |
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20140271419 | CATALYTIC REMOVAL OF GAS PHASE CONTAMINANTS - Systems and methods for removal of gas phase contaminants may utilize catalytic oxidation. For example, a method may include passing a gas that includes a gas phase contaminant through a catalytic membrane reactor at a temperature of about 150° C. to about 300° C., wherein the catalytic membrane reactor includes a bundle of tubular inorganic membranes, wherein each of the tubular inorganic membranes comprise a macroporous tubular substrate with an oxidative catalyst and a microporous layer disposed on a bore side of the macroporous tubular substrate, and wherein at least about 50% of the gas flows through the tubular inorganic membranes in a Knudsen flow regime; and oxidizing at least some of the gas phase contaminant with the oxidative catalyst layer, thereby reducing a concentration of the gas phase contaminant in the gas. | 09-18-2014 |