Patent application number | Description | Published |
20090023863 | CROSS-LINKED FLUORINE-CONTAINING COPOLYMER MOLDINGS - A cross-linked fluorine-containing copolymer moldings applicable to a plasma irradiation step, which is molded as a peroxide cross-linking product of a fluorine-containing copolymer blend comprising a fluorine-containing elastomer copolymer and a fluorine-containing resin copolymer, which is a vinylidene fluoride-tetrafluoroethylene copolymer, both of the copolymers having reaction sites capable of reacting with a common peroxide-based cross-linking agent, respectively, has desired normal state physical properties and compression set value, even if applied to a plasma irradiation step, while reducing particle generation quantity of the fluorine-containing copolymers themselves. | 01-22-2009 |
20090312473 | Fluorine-Containing Alloyed Copolymer - A fluorine-containing alloyed copolymer, which comprises a fluorine-containing elastomer copolymer having a fluorine content of not less than 64% by weight, and a resinous tetrafluoroethylene-perfluoro(alkyl vinyl ether) copolymer having an amount of heat of crystal fusion ΔH of not more than 10 J/g, can give crosslinked moldings having a distinguished plasma resistance against both CF | 12-17-2009 |
20110091915 | IgA Nephropathy Testing Method and Test Kit - There is provided a renal disease testing method comprising a complex detection step of detecting a complex of human uromodulin and human IgA in a sample derived from urine collected from a subject. It is preferred that the renal disease testing method of the invention further comprises a determination step of assessing the whether the renal disease is IgA nephropathy based on the ratio of the amount of the complex detected in the complex detection step to the amount of urinary proteins in the sample. The renal disease testing method of the invention has good detection sensitivity and specificity, and can conveniently and safely assess the existence of a renal disease (preferably, IgA nephropathy). | 04-21-2011 |
20110143382 | IgA Nephropathy Testing Method And Test Kit - There is provided a renal disease testing method comprising a complex detection step of detecting a complex of an antigen derived from human renal mesangial cells and human IgA in a sample derived from urine collected from a subject. It is preferred that the renal disease testing method of the invention further comprises a determination step of assessing the whether the renal disease is IgA nephropathy based on the ratio of the amount of the complex detected in the complex detection step to the amount of urinary proteins in the sample. The renal disease testing method of the invention has good detection sensitivity and specificity, and can conveniently and safely assess the existence of a renal disease (preferably, IgA nephropathy). | 06-16-2011 |
20140080146 | METHOD FOR DETECTING NEUROLOGICAL DISEASE ASSOCIATED WITH COGNITIVE IMPAIRMENT BY MEASURING EPHA4 EXTRACELLULAR DOMAIN - A method for detecting a neurological disease associated with cognitive impairment, wherein the extracellular domain of EphA4 is measured from a biological sample taken from a subject. | 03-20-2014 |
Patent application number | Description | Published |
20080220377 | PHOTO MASK, EXPOSURE METHOD USING THE SAME, AND METHOD OF GENERATING DATA - A photo mask formed with patterns to be transferred to a substrate using an exposure apparatus, the photo mask comprising a pattern row having three or more hole patterns surrounded by a shielding portion or a semitransparent film and arranged along one direction, and an assist pattern surrounded by the shielding portion or semitransparent film and having a longitudinal direction and a latitudinal direction, the assist pattern being located at a specified distance from the pattern row in a direction orthogonal to the one direction, the longitudinal direction of the assist pattern being substantially parallel with the one direction, the longitudinal length of the assist pattern being equivalent to or larger than the longitudinal length of the pattern row, the assist pattern being not transferred to the substrate. | 09-11-2008 |
20080222597 | PHOTO MASK, EXPOSURE METHOD USING THE SAME, AND METHOD OF GENERATING DATA - A photo mask formed with patterns to be transferred to a substrate using an exposure apparatus, the photo mask comprising a pattern row having three or more hole patterns surrounded by a shielding portion or a semitransparent film and arranged along one direction, and an assist pattern surrounded by the shielding portion or semitransparent film and having a longitudinal direction and a latitudinal direction, the assist pattern being located at a specified distance from the pattern row in a direction orthogonal to the one direction, the longitudinal direction of the assist pattern being substantially parallel with the one direction, the longitudinal length of the assist pattern being equivalent to or larger than the longitudinal length of the pattern row, the assist pattern being not transferred to the substrate. | 09-11-2008 |
20090239177 | MASK PATTERN DATA GENERATION METHOD, MASK MANUFACTURING METHOD, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND PATTERN DATA GENERATION PROGRAM - According to an aspect of the present invention, there is provided a mask pattern data generation method including: a first step of obtaining a mask data representing from a design pattern by performing a process simulation with a process parameter having a first value; a second step of obtaining a finished pattern from the mask data by performing the process simulation with the process parameter having a different value; a third step of verifying whether a dimensional error therebetween is within an allowable range; and a fourth step of: if the dimensional error is within the allowable range, determining the mask pattern data; and if the dimensional error is not within the allowable range, repeating the above steps by updating the process parameter until the dimensional error becomes within the allowable range. | 09-24-2009 |
20130001506 | RESISTANCE CHANGE MEMORY AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a resistance change memory includes resistance change elements, vias and sidewall insulating layers, the elements and the vias provided alternately in a first direction and a second direction orthogonal to the first direction, and the sidewall insulating layers provided on sidewalls of the elements. The elements are provided in a lattice pattern having a constant pitch. A thickness of each of the sidewall insulating layers in a direction orthogonal to the sidewalls is a value for contacting the sidewall insulating layers each other or more to form holes between the sidewall insulating layers. The vias are provided in the holes respectively. | 01-03-2013 |
Patent application number | Description | Published |
20090059773 | ELECTRON BEAM RECORDING APPARATUS - An electron beam recording apparatus is disclosed that records information onto the surface of a sample by using an electron beam. The electron beam recording apparatus includes an electron source that irradiates the electron beam, a magnetic detector that is configured to move onto and out of an irradiation axis and acquires magnetic information on the irradiation axis, a convergence position control part that calculates a convergence position correction amount for correcting a convergence position of the electron beam with respect to the surface of the sample based on the magnetic information, and a convergence position adjusting part that adjusts the convergence position of the electron beam with respect to the surface of the sample. The convergence position control part causes the convergence position adjusting part to adjust the convergence position of the electron beam with respect to the surface of the sample based on the convergence position correction amount. | 03-05-2009 |
20130045607 | PATTERN GENERATING APPARATUS, PATTERN GENERATING PROGRAM, AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - According to one embodiment, a pattern generating apparatus includes a light intensity calculating part that calculates light intensity at a pattern to be formed based on exposure and light intensity at the periphery of the pattern, a light intensity evaluating part that evaluates the light intensities at the pattern and the periphery of the pattern, and a data output part that outputs correction data for the pattern based on the results of the evaluation by the light intensity part. | 02-21-2013 |
20130126959 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - According to one embodiment, there are provided a first shaped pattern in which a plurality of first holes are arranged and of which a width is periodically changed along an arrangement direction of the first holes, a second shaped pattern in which a plurality of second holes are arranged and of which a width is periodically changed along an arrangement direction of the second holes, and slits which are formed along the arrangement direction of the first holes and separate the first shaped pattern and the second shaped pattern. | 05-23-2013 |
20130203253 | METHOD OF FORMING PATTERN AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - In a method of forming a pattern according to an embodiment, a first oblique linear pattern arranged at a first oblique angle with respect to a first parallel linear pattern and a second oblique linear pattern arranged at a second oblique angle with respect to the first parallel linear pattern are formed. Then, a pattern is formed in a region in which the first oblique linear pattern overlaps the second oblique linear pattern. A second parallel linear pattern is formed using the first parallel linear pattern and the pattern such that the second parallel linear pattern is divided by the overlap region. At least one of the first and second oblique angles is an angle other than a right angle. | 08-08-2013 |