Yen, Hsinchu
Anthony Yen, Hsinchu TW
Patent application number | Description | Published |
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20090035902 | INTEGRATED METHOD OF FABRICATING A MEMORY DEVICE WITH REDUCED PITCH - Provided is a method of fabricating a memory device. A substrate including an array region and a peripheral region is provided. A first feature and a second feature are formed in the array region. The first feature and the second feature have a first pitch. A plurality of spacers abutting each of the first feature and the second feature are formed. The plurality of spacers have a second pitch. A third feature in the peripheral region and a fourth and fifth feature in the array region are formed concurrently. The forth and fifth feature have the second pitch. | 02-05-2009 |
20140113222 | Mask for Use in Lithography - A mask, or photomask, is used in lithography systems and processes. The mask includes a first polygon of a first state and a second polygon of a second state. The mask also includes a field of the first state and a third polygon of the second state, and in the field. The first and second states are different, and the first and second polygons are located outside of the field. | 04-24-2014 |
20140268087 | Lithography and Mask for Resolution Enhancement - A lithography process in a lithography system includes loading a mask having multiple mask states and having a mask pattern consisting of a plurality of polygons and a field. Different mask states are assigned to adjacent polygons and the field. The lithography process further includes configuring an illuminator to generate an illumination pattern on an illumination pupil plane of the lithography system; configuring a pupil filter on a projection pupil plane of the lithography system with a filtering pattern determined according to the illumination pattern; and performing an exposure process to a target with the illuminator, the mask, and the pupil filter. The exposure process produces diffracted light and non-diffracted light behind the mask and the pupil filter removes most of the non-diffracted light. | 09-18-2014 |
20140272678 | Structure and Method for Reflective-Type Mask - The present disclosure provides an embodiment of a reflective mask that includes a substrate; a reflective multilayer formed on the substrate; a capping layer formed on the reflective multilayer and having a hardness greater than about 8; and an absorber layer formed on the capping layer and patterned according to an integrated circuit layout. | 09-18-2014 |
20140272679 | Extreme Ultraviolet Lithography Process and Mask - An extreme ultraviolet lithography (EUVL) process is disclosed. The process comprises receiving a mask. The mask includes a low thermal expansion material (LTEM) substrate, a reflective multilayer (ML) over one surface of the LTEM substrate, a first region having a phase-shifting layer over the reflective ML, and a second region having no phase-shifting layer over the reflective ML. The EUVL process also comprises exposing the mask by a nearly on-axis illumination with partial coherence less than 0.3 to produce diffracted light and non-diffracted light, removing at least a portion of the non-diffracted light, and collecting and directing the diffracted light and the not removed non-diffracted light by a projection optics box (POB) to expose a target. | 09-18-2014 |
20140272680 | Method For Mask Fabrication And Repair - A method for repairing a phase-defect region in a patterned mask for extreme ultraviolet lithography (EUVL) is disclosed. A patterned mask for EUVL is received. The patterned mask includes an absorptive region having an absorption layer over a defect-repairing-enhancement (DRE) layer, a reflective region having the DRE layer without the absorption layer on top of it, a defect and a phase-defect region resulting from the defect and intruding the reflective region. A location and a shape of the phase-defect region is determined. A portion or portions of the DRE layer in the reflective region is removed according to the location and the shape of the phase-defect region to compensate the effect of the phase-defect region. | 09-18-2014 |
20140272683 | Method Of Fabricating Mask - A method for fabricating an extreme ultraviolet (EUV) mask includes providing a low thermal expansion material (LTEM) layer. A reflective multiple-layer (ML) is deposited over the LTEM layer. A flowable-photosensitive-absorption-layer (FPhAL) is spin coated over the reflective ML. The FPhAL is patterned by a lithography process to form a patterned absorption layer. | 09-18-2014 |
20140272686 | Mask for Extreme Ultraviolet Lithography and Method of Fabricating Same - A mask and method of fabricating same are disclosed. In an example, a mask includes a substrate, a reflective multilayer coating disposed over the substrate and a patterned absorption layer disposed over the reflective multilayer. The patterned absorption layer has a mask image region and a mask border region. The exemplary mask also includes a mask border frame disposed over the mask border region. The mask border frame has a top surface and a bottom surface. The top surface is not parallel to the bottom surface. | 09-18-2014 |
20140342272 | Method to Define Multiple Layer Patterns With a Single Exposure by E-Beam Lithography - The present disclosure provides a method that includes forming a first resist layer on a substrate; forming a second resist layer over the first resist layer; and performing an electron-beam (e-beam) lithography exposure process to the first resist layer and the second resist layer, thereby forming a first latent feature in the first resist layer and a second latent feature in the second resist layer. | 11-20-2014 |
20140342564 | Photomask With Three States For Forming Multiple Layer Patterns With A Single Exposure - The present disclosure provides one embodiment of a mask for a lithography exposure process. The mask includes a mask substrate; a first mask material layer patterned to have a first plurality of openings that define a first layer pattern; and a second mask material layer patterned to have a second plurality of openings that define a second layer pattern. | 11-20-2014 |
20140377693 | Extreme Ultraviolet Lithography Mask and Multilayer Deposition Method for Fabricating Same - A mask, method of fabricating same, and method of using same are disclosed. In an example, a mask includes a substrate and a reflective multilayer coating deposited over the substrate. The reflective multilayer coating is formed by positioning the substrate such that an angle α is formed between a normal line of the substrate and particles landing on the substrate and rotating the substrate about an axis that is parallel with a landing direction of the particles. In an example, reflective multilayer coating includes a first layer and a second layer deposited over the first layer. A phase defect region of the reflective multilayer coating includes a first deformation in the first layer at a first location, and a second deformation in the second layer at a second location, the second location laterally displaced from the first location. | 12-25-2014 |
20150037712 | Extreme Ultraviolet (EUV) Mask, Method Of Fabricating The EUV Mask And Method Of Inspecting The EUV Mask - An out-of-band (OoB) suppression layer is applied on a reflective multiplayer (ML) coating, so as to avoid the OoB reflection and to enhance the optical contrast at 13.5 nm A material having a low reflectivity at wavelength of 193-257 nm, for example, silicon carbide (SiC), is used as the OoB suppression layer. A method of fabricating an EUV mask having the OoB suppression layer and a method of inspecting an EUV mask having the OoB suppression are also provided. | 02-05-2015 |
20150064611 | Extreme Ultraviolet (Euv) Mask And Method Of Fabricating The Euv Mask - A Cu-containing material is provided as an absorber layer of an EUV mask. With the absorber layer of the Cu-containing material, the same lithography performance of a conventional absorber in 70 nm thickness of TaBN can be achieved by only a 30-nm thickness of the absorber layer according to the various embodiments of the present disclosure. Furthermore, the out-off-band (OOB) flare of the radiation light in 193-257 nm can be reduced so as to achieve the better lithography performance. | 03-05-2015 |
20150072271 | Extreme Ultraviolet Lithography Process and Mask - A system and process of an extreme ultraviolet lithography (EUVL) is disclosed. An EUVL process includes receiving a mask pair having a same pattern. The mask pair includes an extreme ultraviolet (EUV) mask and a low EUV reflectivity mask. A first exposure process is performed by using the EUV mask to expose a substrate. A second exposure process is performed by using the low EUV reflectivity mask to expose the same substrate. The first exposure process is conducted according to a first exposure dose matrix and the second exposure process is conducted according to a second exposure dose matrix. | 03-12-2015 |
20150098069 | Extreme Ultraviolet Lithography Process and Mask - A system of an extreme ultraviolet lithography (EUVL) is disclosed. The system includes an extreme ultraviolet (EUV) mask with three states. A reflection coefficient is r | 04-09-2015 |
20150104736 | REFLECTIVE MASK AND METHOD OF MAKING SAME - A reflective mask is described. The mask includes a low thermal expansion material (LTEM) substrate, a conductive layer deposited on a first surface of the LTEM substrate, a stack of reflective multilayers (ML) deposited on a second surface of the LTEM substrate, a capping layer deposited on the stack of reflective ML, a first absorption layer deposited on the first capping layer, a main pattern, and a border ditch. The border ditch reaches to the capping layer, a second absorption layer deposited inside the border ditch, and where the second absorption layer contacts the capping layer. In some instances, the border ditch crosses the capping layer and partially enters the reflective multilayer. | 04-16-2015 |
20150116685 | Extreme Ultraviolet Lithography Process to Print Low Pattern Density Features - The present disclosure provides a method for extreme ultraviolet lithography (EUVL) process. The method includes loading a binary phase mask (BPM) to a lithography system, wherein the BPM includes two phase states and defines an integrated circuit (IC) pattern thereon; setting an illuminator of the lithography system in an illumination mode according to the IC pattern; configuring a pupil filter in the lithography system according to the illumination mode; and performing a lithography exposure process to a target with the BPM and the pupil filter by the lithography system in the illumination mode. | 04-30-2015 |
20150138524 | Extreme Ultraviolet Lithography Process and Mask - A system of an extreme ultraviolet lithography (EUVL) is disclosed. The system includes a mask having reflective phase-shift-grating-blocks (PhSGBs). The system also includes an illumination to expose the mask to produce a resultant reflected light from the mask. The resultant reflected light contains mainly diffracted lights. The system also has projection optics to collect and direct resultant reflected light to expose a target. | 05-21-2015 |
20150147687 | Extreme Ultraviolet Lithography Process and Mask with Reduced Shadow Effect and Enhanced Intensity - The present disclosure provides one embodiment of an extreme ultraviolet (EUV) mask. The EUV mask includes a first state and a second state different from each other; a first main polygon and a second main polygon adjacent to the first main polygon; a plurality of sub-resolution assist polygons; and a field. Each of the first and second main polygons, the sub-resolution assist polygons, and the field has an associated state. The state assigned to the first main polygon is different from the state assigned to the second main polygon. The plurality of assist polygons are assigned a same state, which is different from a state assigned to the field. | 05-28-2015 |
20150177612 | MASK AND METHOD FOR FORMING THE SAME - A photomask includes a low thermal expansion material (LTEM) substrate, a patterned opaque layer over the LTEM substrate, and a patterned capping layer over the opaque layer. The patterned capping layer includes a transition metal material for suppressing haze growth, such as metal oxide, metal nitride, or metal oxynitride. The material in the capping layer reacts with a hydrogenic compound from a lithography environment to for an atomic level hydrogen passivation layer. The passivation layer has superior ability to suppress photo-induced haze defect growth on the photomask surface, to improve production cycle time and reduce the production cost. | 06-25-2015 |
20150212419 | Lithography System And Method For Haze Elimination - The present disclosure provides an apparatus in semiconductor manufacturing. The apparatus includes a mask, a pellicle frame attached to the mask, and a pellicle joined to the pellicle frame thereby forming a sealed enclosure bounded by the pellicle, the pellicle frame, and the mask. The apparatus further includes photo-catalyst particles introduced into the sealed enclosure before the sealed enclosure is formed. The photo-catalyst particles prevent haze formation within the enclosure during lithography exposure processes. | 07-30-2015 |
20150261082 | Structure and Method for Reflective-Type Mask - A reflective mask includes a substrate; a reflective multilayer formed on the substrate; an absorber layer formed on the reflective multilayer, wherein the absorber layer is patterned to have openings according to an integrated circuit layout; and a protection layer formed over the reflective multilayer within the openings. | 09-17-2015 |
20150262836 | Method for Integrated Circuit Patterning - Provided is a method of forming a pattern for an integrated circuit. The method includes forming a first layer over a substrate, wherein the first layer's etch rate is sensitive to a radiation, such as an extreme ultraviolet (EUV) radiation or an electron beam (e-beam). The method further includes forming a resist layer over the first layer and exposing the resist layer to the radiation for patterning. During the exposure, various portions of the first layer change their etch rate in response to an energy dose of the radiation received therein. The method further includes developing the resist layer, etching the first layer, and etching the substrate to form a pattern. The radiation-sensitivity of the first layer serves to reduce critical dimension variance of the pattern. | 09-17-2015 |
20150268561 | Method of Fabricating an Integrated Circuit with Enhanced Defect Repairability - The present disclosure provides one embodiment of a method for extreme ultraviolet lithography (EUVL) process. The method includes loading a mask to a lithography system. The mask includes defect-repaired regions and defines an integrated circuit (IC) pattern thereon. The method also includes setting an illuminator of the lithography system in an illumination mode according to the IC pattern, configuring a pupil filter in the lithography system according to the illumination mode and performing a lithography exposure process to a target with the mask and the pupil filter by the lithography system in the illumination mode. | 09-24-2015 |
20150268565 | LITHOGRAPHY PROCESS - A method for being used in a lithography process is provided. The method includes receiving a first mask, a second mask and a substrate with a set of baseline registration marks. A first set of registration marks is formed on the substrate using the first mask and a first exposure tool, and a first set of overlay errors is determined. The first set of registration marks is removed and a second set of registration marks is formed on the substrate using the second mask and a second exposure tool. A second set of overlay errors is determined. A set of tool-induced overlay errors is generated from the first and second sets of overlay errors and used in fabricating a third mask. The third mask can then be used in the lithography process to accommodate the overlay errors caused by different exposure tools, different masks, and different mask writers. | 09-24-2015 |
20150277234 | Method and System for Reducing Pole Imbalance by Adjusting Exposure Intensity - A method and system for adjusting exposure intensity to reduce unwanted lithographic effects is disclosed. In some exemplary embodiments, the method of photolithography includes receiving a mask and a workpiece. An orientation of an illumination pattern relative to the mask is determined, and an intensity profile of the illumination pattern is adjusted according to the orientation. The mask is exposed to radiation according to the illumination pattern and the intensity profile. Radiation resulting from the exposing of the mask is utilized to expose the workpiece. In some such embodiments, the intensity profile includes an intensity that varies across an illuminated region of the illumination pattern. | 10-01-2015 |
20150287596 | Method to Define Multiple Layer Patterns with a Single Exposure by Charged Particle Beam Lithography - The present disclosure provides a method that includes forming a first patternable material layer on a substrate; forming a second patternable material layer over the first patternable material layer; and performing a charged particle beam lithography exposure process to the first patternable material layer and the second patternable material layer, thereby forming a first latent feature in the first patternable material layer and a second latent feature in the second patternable material layer. | 10-08-2015 |
20150309405 | METHOD OF MAKING AN EXTREME ULTRAVIOLET PELLICLE - The present disclosure relates to a method of forming an EUV pellicle having an pellicle film connected to a pellicle frame without a supportive mesh, and an associated apparatus. In some embodiments, the method is performed by forming a cleaving plane within a substrate at a position parallel to a top surface of the substrate. A pellicle frame is attached to the top surface of the substrate. The substrate is cleaved along the cleaving plane to form a pellicle film comprising a thinned substrate coupled to the pellicle frame. Prior to cleaving the substrate, the substrate is operated upon to reduce structural damage to the top surface of substrate during formation of the cleaving plane and/or during cleaving the substrate. Reducing structural damage to the top surface of the substrate improves the durability of the thinned substrate and removes a need for a support structure for the pellicle film. | 10-29-2015 |
20150318173 | Method of Semiconductor Integrated Circuit Fabrication - A method of fabricating a semiconductor integrated circuit (IC) is disclosed. A dielectric layer is formed over a substrate. An interlayer is formed over the dielectric layer. A first photoresist layer with a first opening is formed over the interlayer and a second photoresist layer having a second opening is formed over the first photoresist layer. Spacers are formed along sidewalls of the first opening and the second opening. A first trench is formed in the interlayer by using the spacer along the first opening as an etch mask. A second trench is formed in the interlayer by using the spacer along the second opening as an etch mask. The first trench and the second trench are extended down into the dielectric layer as a lower portion and an upper portion, respectively, of a dielectric trench. | 11-05-2015 |
20150346596 | Extreme Ultraviolet Lithography Process and Mask - An extreme ultraviolet lithography (EUVL) process is disclosed. The process comprises receiving a mask. The mask includes a low thermal expansion material (LTEM) substrate, a reflective multilayer (ML)over one surface of the LTEM substrate, a first region having a phase-shifting layer over the reflective ML, and a second region having no phase-shifting layer over the reflective ML. The EUVL process also comprises exposing the mask by a nearly on-axis illumination with partial coherence less than 0.3 to produce diffracted light and non-diffracted light, removing at least a portion of the non-diffracted light, and collecting and directing the diffracted light and the not removed non-diffracted light by a projection optics box (POB) to expose a target. | 12-03-2015 |
20160033866 | Method to Mitigate Defect Printability for ID Pattern - The present disclosure provides a method in accordance with some embodiments. The method includes loading a mask to a lithography system, wherein the mask includes an one-dimensional integrated circuit (1D IC) pattern; utilizing a pupil phase modulator in the lithography system to modulate phase of light diffracted from the mask; and performing a lithography exposing process to a target in the lithography system with the mask and the pupil phase modulator. | 02-04-2016 |
20160048071 | Extreme Ultraviolet Lithography Process and Mask - An apparatus comprises a low EUV reflectivity (LEUVR) mask. The LEUVR mask includes a low thermal expansion material (LTEM) layer; a reflective multilayer (ML) over the LTEM layer; and a patterned absorption layer over the reflective ML. The reflective ML has less than 2% EUV reflectivity. | 02-18-2016 |
20160064239 | Method for Integrated Circuit Patterning - Provided is a method of patterning a substrate. The method includes patterning a resist layer formed over the substrate to result in a resist pattern and treating the resist pattern with an ion beam. The ion beam is generated with a gas, such as CH | 03-03-2016 |
20160109798 | METHOD OF MAKING AN EXTREME ULTRAVIOLET PELLICLE - The present disclosure relates to a method of forming an extreme ultraviolet (EUV) pellicle having an pellicle film connected to a pellicle frame without a supportive mesh, and an associated apparatus. In some embodiments, the method is performed by forming a cleaving plane within a substrate. A pellicle frame is attached to an upper surface of the substrate, and the substrate is cleaved along the cleaving plane to form a pellicle film attached to the pellicle frame. The method forms the pellicle without using a support structure, which may block EUV radiation and cause substantial non-uniformities in the intensity of EUV radiation incident on an EUV reticle. | 04-21-2016 |
Bi-Ming Yen, Hsinchu TW
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20150125788 | MULTI-LINE WIDTH PATTERN CREATED USING PHOTOLITHOGRAPHY - Systems and methods are provided for forming features through photolithography. A polymer layer is formed over a substrate. The polymer layer is patterned to form a first feature and a second feature, the first feature and the second feature being separated at a first distance. A rinse material is applied to the polymer layer including the first feature and the second feature. The rinse material is removed from the polymer layer including the first feature and the second feature to cause the first feature and the second feature to come into contact with each other. A third feature is formed based on the first feature and the second feature being in contact with each other. | 05-07-2015 |
20160033871 | MULTI-LINE WIDTH PATTERN CREATED USING PHOTOLITHOGRAPHY - Systems and methods are provided for forming features through photolithography. A polymer layer is formed over a substrate. The polymer layer is patterned to form a first feature and a second feature, the first feature and the second feature being separated at a first distance. A rinse material is applied to the polymer layer including the first feature and the second feature. The rinse material is removed from the polymer layer including the first feature and the second feature to cause the first feature and the second feature to come into contact with each other. A third feature is formed based on the first feature and the second feature being in contact with each other. | 02-04-2016 |
Chaun-Yu Yen, Hsinchu TW
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20100127424 | Fabrication of metal meshes/carbon nanotubes/polymer composite bipolar plates for fuel cell - A reinforced mesh structure containing bipolar plate for a polymer electrolyte membrane fuel cell (PEMFC) is prepared as follows: a) compounding vinyl ester and graphite powder to form bulk molding compound (BMC) material, the graphite powder content ranging from 60 wt % to 95 wt % based on the total weight of the graphite powder and vinyl ester, wherein 0.05-10 wt % reactive carbon nanotubes modified by acyl chlorination-amidization reaction, based on the weight of the vinyl ester resin, are added during the compounding; b) molding the BMC material from step a) with a metallic net being embedded in the molded BMC material to form a bipolar plates having a desired shaped at 80-200° C. and 500-4000 psi. | 05-27-2010 |
Cheng-Cheng Yen, Hsinchu TW
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20090086392 | POWER-RAIL ESD PROTECTION CIRCUIT WITHOUT LOCK-ON FAILURE - An ESD protection circuit including a discharge device, a first detection circuit, and a second detection circuit. The discharge device provides a discharge path between a first power rail and a second power rail when the discharge device is activated. The discharge device stops providing the discharge path when the discharge device is de-activated. The first detection circuit is coupled between the first and the second power rails. The first detection circuit activates the discharge device when an ESD event occurs in the first power rail. The second detection circuit de-activates the discharge device when the ESD event does not occur in the first power rail. | 04-02-2009 |
20090187361 | TRANSIENT DETECTION CIRCUIT FOR ESD PROTECTION - A transient detection circuit including a detecting unit, a setting unit, and a memory unit. The transient detection circuit provides an information signal to an external instrument when an electrostatic discharge (ESD) event occurs. The detecting unit is coupled between a first power line and a second power line for detecting the ESD event. The setting unit sets a level of a first node according to the detection result. The memory unit controls the information signal according to the level of the first node. The information signal is at a first level when the ESD event occurs in the first power line. | 07-23-2009 |
20090231765 | TRANSIENT TO DIGITAL CONVERTERS - A digital converter including a first adjustment unit and a first transient detection unit. The first adjustment unit adjusts amplitude of an electrostatic discharge (ESD) pulse to generate a first adjustment signal when an ESD event occurs in a first power line and a second power line is at a complementary level. The first transient detection unit generates a first digital code according to the first adjustment signal. | 09-17-2009 |
20090267584 | TRANSIENT DETECTION CIRCUIT - A transient detection circuit coupled between a first power line and a second power line and including a first control unit, a setting unit, and a voltage regulation unit. The first control unit generates a first control signal. The first control signal is at a first level when an electrostatic discharge (ESD) event occurs. The first control signal is at a second level when the ESD event does not occur. The setting unit sets a first node. The first node is set at the second level when the first control signal is at the first level. The voltage regulation unit regulates the first node. The voltage regulation unit regulates the level of the first node at the second level when the first control signal is at the second level. | 10-29-2009 |
20120236445 | On-Chip Noise Filter Circuit - A noise filter circuit for an IC is provided. The noise filter circuit comprises a decoupling unit coupled to a power pad of the IC and a current amplifier circuit coupled to the decoupling unit and the power pad of the IC. The decoupling unit generates a first current in response to a transient voltage being on the power pad of the IC. The current amplifier circuit drains a second current from the power pad of the IC according to the first current. | 09-20-2012 |
20130155566 | SELF-RESET TRANSIENT-TO-DIGITAL CONVERTOR AND ELECTRONIC PRODUCT UTILIZING THE SAME - A self-reset transient-to-digital convertor which includes at least one transient detection circuit is disclosed. The transient detection circuit, coupled between a first power line and a second power line, includes at least one voltage drop unit, a current amplifier unit, and a time control unit. When an ESD event occurs, the voltage drop unit is conducted to pass through an ESD current. The current amplifier unit, coupled between the voltage drop unit and the first power line, is conducted by the ESD current to set the level of a first node. The time control unit, coupled between the first node and the second power line, is configured to gradually drain the ESD current away. Wherein, each of the transient detection circuit generates a digital code according to the level of the first node. | 06-20-2013 |
Cheng-Chung Yen, Hsinchu TW
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20110194960 | OIL-FREE LUBRICATION CENTRIFUGAL REFRIGERANT COMPRESSOR AND LUBRICATION METHOD THEREOF - An oil-free lubrication centrifugal refrigerant compressor for compressing low-pressure refrigerant into high-pressure refrigerant, includes: a housing; a refrigerant pathway; a compression module; a radial bearing; a first conducting member, collecting troughs and a first exhaust member. Therein, the compression module has a rotating shaft, a compressing member and a driving member; the radial bearing is rotatably disposed around the rotating shaft; the first conducting member conducts lubricating refrigerant fluid to the outer surface of the radial bearing and the inner surface of the rotating shaft so as to provide appropriate lubrication to the radial bearing and the rotating shaft when the driving member drives the rotating shaft to rotate and activate the compressing member to compress low pressure refrigerant into high pressure refrigerant; and the first exhaust member exhausts the lubricating refrigerant fluid, thereby solving the problem of contamination caused by using oil lubricants for compressors as encountered in prior techniques. | 08-11-2011 |
20120134784 | MECHANISM FOR MODULATING DIFFUSER VANE OF DIFFUSER - A mechanism modulates a fluid flow in a diffuser flow path of a compressor diffuser, including: a shroud disposed on the diffuser flow path and having a cam and a driving wheel fixed base; a diffuser vane having a diffuser guide vane disposed in the diffuser flow path and a diffuser vane shaft fixedly disposed on the diffuser vane that penetrates from the diffuser flow path through the shroud; a driving ring sleeved on the cam and having a moving bar; a sliding block having one end connected with one end the diffuser vane shaft that penetrates through the shroud, and the other end sleeved on a sliding groove formed on the moving bar; a driving wheel disposed in the driving wheel fixed base and having a driving shaft connected to an actuator outside of the compressor; and a driving cable connected to the driving wheel and the driving ring. | 05-31-2012 |
Cheng-Hsiung Yen, Hsinchu TW
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20140117306 | Light Emitting Device - A light-emitting device comprises a first type semiconductor layer, a multi-quantum well structure on the first type semiconductor layer, and a second type semiconductor layer on the multi-quantum well structure, wherein the multi-quantum well structure comprises a first portion near the first type semiconductor layer, a second portion near the second type semiconductor layer, and a strain releasing layer between the first portion and the second portion and comprising a first layer including Indium, a second layer including Aluminum on the first layer, and a third layer including Indium on the second layer, wherein the Indium concentration of the third layer is higher than that of the first layer. | 05-01-2014 |
20140167097 | OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME - A method of fabricating an optoelectronic device comprising, providing a substrate, wherein the substrate comprises a first major surface and a second major surface opposite to the first major surface; forming a semiconductor epitaxial stack on the first major surface including a first conductive-type semiconductor layer having a first doping concentration, an active layer, and a second conductive-type semiconductor layer wherein the semiconductor epitaxial stack having four boundaries and a geometric center; and forming a plurality of the hollow components in the first conductive-type semiconductor layer wherein the plurality of the hollow components is formed from the boundary of the semiconductor epitaxial stack to the geometric center of the semiconductor epitaxial stack. | 06-19-2014 |
20140217358 | LIGHT-EMITTING DIODE AND THE MANUFACTURE METHOD OF THE SAME - This application discloses a light-emitting diode comprising a first semiconductor layer, an active layer on the first semiconductor layer, a second semiconductor layer on the active layer, and a semiconductor contact layer on the second semiconductor layer. The second semiconductor layer comprises a first sub-layer and a second sub-layer formed above the first sub-layer, wherein the material of the second sub-layer comprises Al | 08-07-2014 |
Cheng-Tyng Yen, Hsinchu TW
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20160005883 | SILICON CARBIDE SEMICONDUCTOR DEVICE - A silicon carbide (SiC) semiconductor device having a metal oxide semiconductor field effect transistor (MOSFET) and integrated with an anti-parallelly connected Schottky diode includes: a substrate, an n-drift layer, a plurality of doped regions, a gate dielectric layer, a gate electrode, an inter-layer dielectric layer, a plurality of source openings, a plurality of junction openings, a plurality of gate openings, a first metal layer and a second metal layer. The second metal layer at the junction openings forms the Schottky diode. | 01-07-2016 |
20160111533 | SILICON CARBIDE SEMICONDUCTOR DEVICE - A silicon carbide (SiC) semiconductor device having a metal oxide semiconductor field effect transistor (MOSFET) and integrated with an anti-parallelly connected Schottky diode includes: an n-type substrate, an n-type drift layer, a plurality of doped regions, a gate dielectric layer, a gate electrode, an inter-layer dielectric layer, a plurality of source openings, a plurality of junction openings, a plurality of gate openings, a first metal layer and a second metal layer. The second metal layer at the junction openings forms the Schottky diode. | 04-21-2016 |
Chia-Han Yen, Hsinchu TW
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20080212424 | DATA MODULATION/ENCRYPTION METHOD USED IN HOLOGRAPHIC STORAGE SYSTEM - The disclosure is a data modulation/encryption method used in a holographic storage system. The data modulation method includes steps of: receiving an original data sequence; arraying the original data sequence to a first matrix with n×n dimensions; multiplying the first matrix by a sparse matrix to generate a second matrix with n×n dimensions; executing a modulating and mapping procedure for generating a third matrix with (n+1)×n or n×(n+1) dimensions, wherein the third matrix is composed of a modulation part and an extra part; and, storing the third matrix; wherein the sparse matrix is a binary matrix, a total number of elements in each row of the sparse matrix is odd, all rows of the sparse matrix have a same even number of bit | 09-04-2008 |
Chia-Pang Yen, Hsinchu TW
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20150351077 | Method of Handling Hybrid Automatic Repeat Request Resources in Wireless Communication System - A method of handling a hybrid automatic repeat request acknowledgement response for a network of a wireless communication system includes the network selecting a plurality of first communication devices from a plurality of communication devices of the wireless communication system; and the network responding to the plurality of first communication devices with a positive HARQ acknowledgement message. The plurality of communication devices transmits a plurality of uplink transmissions to the network. | 12-03-2015 |
Chih-Ching Yen, Hsinchu TW
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20150331176 | FRONT LIGHT GUIDE MODULE AND ELECTROPHORESIS DISPLAY HAVING THE SAME - A front light guide includes a light guide plate, a light source, a functional material layer and a first adhesive layer. The light guide plate has a side surface, a first surface and a second surface opposite to the first surface. The light guide plate has a first refractive index. The light source faces the side surface and configured to emit light into the light guide plate. The functional material layer is disposed at a side adjacent to the first surface, and has a third refractive index. The first adhesive layer is interposed between the light guide plate and the functional material layer so as to adhere the light guide plate with the functional material layer. The first adhesive layer has a second refractive index. The first refractive index is greater than the second refractive index, and the second refractive index is greater than the third refractive index. | 11-19-2015 |
Chih-Hsu Yen, Hsinchu TW
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20120250758 | METHOD AND APPARATUS FOR FRAME MEMORY COMPRESSION - A method for frame memory compression divides each of a plurality of image frames in a frame memory into a plurality of blocks for taking a block as a compression unit. It quantizes a plurality of pixel values inside the block according to a predefined parameter, thereby generating a quantized block and a plurality of removed bits from the binary representation of the plurality of pixel values. A predictor is used to produce a residual block for the quantized block. A variable length encoder takes the residual block as an input and produces a coded bitstream. A packing unit is used to take the coded bitstream and the number of removed bits generated by the quantizer as inputs, so as to produce an entire codeword sequence of the block that meets a target bit rate by using a structure called group of blocks (GOB) to flexibly share available spaces of the blocks in the same GOB. | 10-04-2012 |
Chih-Jen Yen, Hsinchu TW
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20080211545 | SAMPLE-AND-HOLD APPARATUS AND OPERATING METHOD THEREOF - A sample-and-hold apparatus and an operating method thereof are provided. The sample-and-hold apparatus includes a sampling amplifier, a transistor, a first switch, a second switch, a sampling capacitor, and a drain-charge unit. A first input terminal of the sampling amplifier receives an input signal. A first-terminal of the transistor is coupled to a first voltage. The first switch is coupled between an output terminal of the sampling amplifier and a gate of the transistor. The first and second terminals of the second switch are coupled to a second terminal of the transistor and a second input terminal of the sampling amplifier, respectively. The first and second terminals of the sampling capacitor are coupled to the gate of the transistor and a reference voltage. The drain-charge unit for draining/providing charges has first and second terminals coupled to the second terminal of the second switch and a second voltage, respectively. | 09-04-2008 |
Chih-Nam Yen, Hsinchu TW
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20100232223 | Defective block handling method for a multiple data channel flash memory storege device - The block groups of a multiple data channel flash memory storage device are detected for defective blocks. The block group containing any defective blocks is divided into subgroups, each of which contains only defective blocks or only good blocks. The subgroups containing only good blocks are selected to establish a new block group having the same amount of blocks as that of the original block groups. | 09-16-2010 |
Chih-Ting Yen, Hsinchu TW
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20150341860 | Beacon Device and Control Method Thereof - A beacon device includes an antenna, a low-power RF (Radio Frequency) device, a light sensor, a microprocessor, and a battery. The low-power RF device generates an RF signal, and the antenna transmits the RF signal outwardly. The light sensor detects intensity of light nearby, and generates a detection signal. The microprocessor controls an operation mode of the low-power RF device according to the detection signal. The battery supplies electric power to the low-power RF device, the light sensor, and the microprocessor. | 11-26-2015 |
Chih Yueh Yen, Hsinchu TW
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20090184701 | SWITCHING VOLTAGE REGULATOR, CONTROL CIRCUIT AND METHOD THEREOF - A control circuit comprises a PWM control circuit and a PWM skip control circuit. The PWM control circuit controls a switching circuit. The switching circuit acts as a current source for an output circuit and a load circuit. The PWM skip control circuit controls the operation of the PWM control circuit. When the output current of the switching circuit is below a predetermined threshold, the PWM skip control circuit stops the operation of the PWM control circuit. When the output voltage of the switching circuit is below a predetermined threshold, the PWM skip control circuit resumes the operation of the PWM control circuit. | 07-23-2009 |
20090206815 | SLOPE RATE COMPENSATION CIRCUIT, METHOD THEREOF AND PULSE WIDTH MODULATION BOOST CONVERTER CIRCUIT - A slope rate compensation circuit includes a source follower level-shift amplifier, a capacitor, a first resistor and a second resistor. The source follower level-shift amplifier includes a first transistor and a second transistor. The first transistor allows a first current to flow therein, the second transistor allows a second current to flow therein, and the first current increases with the second current. The capacitor is connected to the source terminal of the first transistor. The first resistor is connected to the source terminal of the second transistor. The second resistor allows a third current to flow therein, and the third current increases with the second current. The second resistor is related to the output voltage of the slope rate compensation circuit. | 08-20-2009 |
20090273874 | POWER SWITCH CIRCUIT EXHIBITING OVER CURRENT AND SHORT CIRCUIT PROTECTION AND METHOD FOR LIMITING THE OUTPUT CURRENT THEREOF - A power switch circuit exhibiting over current and short circuit protections comprises a power-driving unit, a sense unit and a feedback controller circuit. The power-driving unit provides power to a load circuit from a power supply. The sense unit senses the output current of the power-driving unit. The feedback controller circuit controls the power-driving unit and the sense unit. When the output current of the power-driving unit exceeds a threshold, the output current is limited to an over current protection current level. When the resistance of the load circuit is approximately zero, the output current of the power-driving unit is limited to a short circuit protection current level. | 11-05-2009 |
Chin-Nan Yen, Hsinchu TW
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20090106472 | Virtual SATA port multiplier, virtual SATA device, SATA system and data transfer method in a SATA system - A virtual SATA port multiplier and a virtual SATA device are provided for a SATA system. The virtual SATA port multiplier uses a SATA physical layer for data transfer between it and a SATA host, and a non-physical layer for direct data transfer between it and the virtual SATA device. Since the data transfer between the virtual SATA port multiplier and the virtual SATA device is not carried out by way of SATA physical layers, no physical layer circuits are required accordingly, thereby reducing the manufacturing cost, power consumption and hardware size of the SATA system. | 04-23-2009 |
20090138649 | Nonvolatile memory system and method of decentralizing the peak current in a nonvolatile memory system - A nonvolatile memory system has a controller chip connected to a memory medium and several nonvolatile memory chips. The memory medium stores program codes for the controller chip to distribute an operation of the nonvolatile memory chips upon an instruction over time, so as to decentralize the peak current caused by the operation and thereby improve the stability of the system. | 05-28-2009 |
20090164698 | Nonvolatile storage device with NCQ supported and writing method for a nonvolatile storage device - A nonvolatile storage device buffers multiple write commands and selects one or more therefrom according to a choosing policy to execute in priority, so as to increase the probability of continuously executing write commands corresponding to an identical smallest erasable unit, thereby reducing the frequency of backup, erasing and copyback operations and improving the efficiency of the nonvolatile storage device. | 06-25-2009 |
Chin-Tang Yen, Hsinchu TW
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20140220793 | CONNECTING DEVICE AND ELECTRONIC DEVICE ASSEMBLY - A connecting device is disclosed, which includes a connector structure having a housing, a plug connector, a plurality of electrical contacts and a magnetic-metal set. The housing has a surface on which the electrical contacts and the magnetic-metal set are disposed, and the plug connector protrudes from the housing and is electrically connected to the electrical contacts. An electronic device assembly is further disclosed, which includes an electronic device and the aforesaid connecting device. The connecting device can be inserted into a socket connector of the electronic device, so as to transform the socket connector into a non-pluggable magnetic connector. | 08-07-2014 |
Chuan-Yu Yen, Hsinchu TW
Patent application number | Description | Published |
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20100059718 | Fabrication of carbon nanotubes reinforced polymer composite bipolar plates for fuel cell - A composite bipolar plate for a polymer electrolyte membrane fuel cell (PEMFC) is prepared as follows: a) compounding vinyl ester and graphite powder to form bulk molding compound (BMC) material, the graphite powder content ranging from 60 wt % to 95 wt % based on the total weight of the graphite powder and vinyl ester, wherein carbon nanotubes together with a polyether amine dispersant or modified carbon nanotubes 0.05-10 wt %, based on the weight of the vinyl ester resin, are added during the compounding; b) molding the BMC material from step a) to form a bipolar plates having a desired shaped at 80-200° C. and 500-4000 psi. | 03-11-2010 |
20100127428 | Fabrication of carbon nanotubes reinforced semi-crystalline polymer composite bipolar plates for fuel cell - A composite bipolar plate for a polymer electrolyte membrane membrane fuel cell (PEMFC) is prepared as follows: a) melt compounding a polypropylene resin and graphite powder at 100-250° C. and 30-150 rpm to form a melt compounding material, the graphite powder content ranging from 50 wt % to 95 wt % based on the total weight of the graphite powder and the polypropylene resin, and the polypropylene resin being a homopolymer of propylene or a copolymer of propylene and ethylene, wherein 0.05-20 wt % carbon nanotubes, based on the weight of the polypropylene resin, are added during the melt compounding; and b) molding the melt compounding material from step a) to form a bipolar plate having a desired shaped at 100-250° C. and 500-4000 psi. | 05-27-2010 |
20100154871 | Composite substrate for counter electrode of dye-sensitized solar cell - A substrate for counter electrode of dye-sensitized solar cell is made of a composite material, which is prepared by: a) compounding vinyl ester and graphite powder to form bulk molding compound (BMC) material, the graphite powder content ranging from 60 wt % to 95 wt % based on the total weight of the graphite powder and vinyl ester, wherein 0.01-10 wt % of an electrically conductive filler, based on the weight of the vinyl ester resin, is optionally added during the compounding; b) molding the BMC material from step a) to form a substrate for the counter electrode having a desired shaped at 80-200° C. and 500-4000 psi. | 06-24-2010 |
20100269270 | Preparation of a nanocomposite photoanode for dye-sensitized solar cells - A process for preparing a photoanode of dye-sensitized solar cells (DSSCs) is disclosed, which contains nano TiO | 10-28-2010 |
Chun-Chiang Yen, Hsinchu TW
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20100219433 | LIGHT EMITTING DEVICES - Light emitting devices conformally covered by a luminescent material layer are presented. A light emitting device includes a semiconductor light emitting die attached to a substrate. At least one bond pad is disposed on the semiconductor light emitting die. A luminescent material layer conformally covers the semiconductor light emitting die, wherein the luminescent material layer has at least one opening corresponding to and exposing the at least one bond pad. At least one wirebond is electrically connected to the at least one bond pad and a contact pad on the substrate. | 09-02-2010 |
Chung-Hsien Yen, Hsinchu TW
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20090009728 | Projector with an external air filtration device - A projector includes a housing, an internal projection mechanism, and an external air filtration device. The housing has a ventilation window portion. The internal projection mechanism is disposed in the housing, and includes an imaging system, a light source system for providing a light beam to the imaging system, and a ventilating fan. The external air filtration device includes a frame, a filter member, and an engaging unit. The engaging unit engages removably the frame to the ventilation window portion of the housing for securing the filter member on the exterior of the housing between the frame and the ventilation window portion. | 01-08-2009 |
Feng-Wen Yen, Hsinchu TW
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20110163300 | ORGANIC LIGHT-EMITTING MATERIAL, ORGANIC LIGHT-EMITTING ELEMENT USING THE SAME AND METHOD OF FORMING THE SAME - The present invention provides compound of formula (I) | 07-07-2011 |
20140131664 | INDENOTRIPHENYLENE DERIVATIVES AND ORGANIC LIGHT EMITTING DEVICE USING THE SAME - The present invention discloses a new indenotriphenylene derivatives and organic light emitting device using the derivatives. The organic light emitting device employing new indenotriphenylene derivatives as host material can lower driving voltage, prolong half-lifetime, increasing efficiency. The new indenotriphenylene derivatives are represented by the following formula (A): | 05-15-2014 |
20140151645 | FLUORENE COMPOUND AND ORGANIC ELECTROLUMINESCENT DEVICE USING THE SAME - The present invention discloses a new fluorene compound and organic EL device using the compound. The organic EL device employing the new fluorene compound as host material can lower driving voltage, prolong half-lifetime. The fluorene compound can functions as blue emitting host material of a light emitting layer and improve CIE colour purity in blue emitting device. The fluorene compound are represented by the following formula(A): | 06-05-2014 |
Hsiao-Tsung Yen, Hsinchu TW
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20150280684 | SIGNAL-TRANSMISSION-LINE STRUCTURE AND ELECTRONIC DEVICE USING THE SAME - A signal-transmission-line structure includes a substrate, a through-silicon via (TSV) trench, a conductive substance, at least a conductor wire, and a dielectric layer. The substrate has a first surface and a second surface opposite to each other. The TSV trench is formed in the first surface of the substrate and extends along the first surface. The bottom surface of the TSV trench is located between the first surface and the second surface of the substrate. The TSV trench is filled with the conductive substance to form a transmission line. The conductor wire is located above the transmission line. The dielectric layer is located on the first surface of the substrate, and separates the conductor wire from the transmission line. | 10-01-2015 |
20150303888 | SEMICONDUCTOR DEVICE WITH INDUCTOR-CAPACITOR RESONANT CIRCUIT - A semiconductor device with an inductor-capacitor (LC) resonant circuit includes a first insulation layer, an inductor component, and a capacitor component. The inductor component includes a coil-conductor segment and two extension-conductor segments. The coil-conductor segment and the extension-conductor segments are located on a same surface of the first insulation layer, and the extension-conductor segments are coupled to two ends of the coil-conductor segment, respectively. The extension-conductor segments are arranged at an interval, and extend outwards relative to the coil-conductor segment. A first region is defined by the extension-conductor segments and the coil-conductor segment, and the capacitor component is arranged corresponding to the first region in an embedded manner on the other surface, opposite to the inductor component, of the first insulation layer. | 10-22-2015 |
Hung-Jie Yen, Hsinchu TW
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20090209223 | System and method for power savings in a wireless communication network - A method for power savings in a wireless communications network including selecting one or more connections with common performance characteristics to create a plurality of power savings classes, attributing a power savings window size to each power savings class, and aligning power savings classes with the same start time to generate an aligned power savings class. In addition, the method includes communicating the plurality of power savings classes and each associated power savings window size to a base station. | 08-20-2009 |
Hung-Ju Yen, Hsinchu TW
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20100168442 | PENTAARYLDIAMINE-CONTAINING BISMALEIMIDE COMPOUND AND PRODUCING METHOD THEREOF - A pentaaryldiamine-containing bismaleimide compound of Formula (I): | 07-01-2010 |
Jui-Hsiang Yen, Hsinchu TW
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20120092629 | PROJECTION DEVICE - A projection device including an optical engine base, a light source, a light valve, and a projection lens is provided. The light source includes a component holder, a light component, and light lens. The component holder is assembled to the optical engine base, and has a component slot and a lens slot communicated with the component slot. The lens slot has at least one slot section plane. The light component is disposed within the component slot. The light lens is disposed within the lens slot, and adapted to form the light generated by the light component into a lighting beam. The light valve and the projection lens are assembled to the optical engine base. The light valve is adapted to convert the lighting beam into an image beam. The projection lens is adapted to convert the image beam into a projection beam. | 04-19-2012 |
20120175507 | LIGHT VALVE MODULE AND PROJECTION DEVICE USING THE SAME - A light valve module and a projection device using thereof are provided. The projection device includes a chassis, a light source, a projection lens, the light valve module and a fastener assembly. The light valve module is configured within a cavity of the chassis by the fastener assembly and disposed on a transmission path of a light beam so as to convert the light beam to an image light beam. The light valve module includes a field lens, a light valve component and an elastic frame. First and second surfaces of the elastic frame respectively contact the field lens and the light valve component. A recess of the elastic frame is located on one of the first surface and the second surface. A pressed portion of the elastic frame is deformed towards the recess when the field lens and the light valve component press the elastic frame. | 07-12-2012 |
Jui-Kang Yen, Hsinchu TW
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20120032217 | WHITE LED DEVICE AND MANUFACTURING METHOD THEREOF - The invention provides a white light emitting diode device, which includes: a conductive substrate; a multilayered light emitting semiconductor epitaxial structure formed on the conductive substrate; a contact provided on the multilayered light emitting semiconductor epitaxial structure; a transparent layer provided on the multilayered light emitting semiconductor epitaxial structure; a wavelength converting layer provided on the transparent layer; and an optical layer provided on the wavelength converting layer. The invention also provides a method of manufacturing the white light emitting diode device. | 02-09-2012 |
Kuang Yen, Hsinchu TW
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20100178610 | Metallocenyl Phthalocyanine Compounds and Use Thereof - This invention relates to a novel metallocenyl phthalocyanine compound represented by the following general formula (I), in which at least one of the four benzene rings of phthalocyanine is connected with the organometallic complex group through a linker having one carbon atom. This invention also relates to the use of the phthalocyanine compounds in optical recording media. | 07-15-2010 |
Kuang Fu Yen, Hsinchu TW
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20080220367 | Metallocenyl Phthalocyanine Compounds and Use Thereof - This invention relates to a novel metallocenyl phthalocyanine compound represented by the following general formula (I), in which at least one of the four benzene rings of phthalocyanine is connected with the organometallic complex group through a linker having one carbon atom. This invention also relates to the use of the phthalocyanine compounds in optical recording media. | 09-11-2008 |
20110282052 | METALLOCENYL PHTHALOCYANINE COMPOUNDS AND USE THEREOF - This invention relates to a novel metallocenyl phthalocyanine compound represented by the following general formula (I), in which at least one of the four benzene rings of phthalocyanine is connected with the organometallic complex group through a linker having one carbon atom. This invention also relates to the use of the phthalocyanine compounds in optical recording media. | 11-17-2011 |
Kuang Kai Yen, Hsinchu TW
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20140043148 | THREE-DIMENSIONAL INTEGRATED CIRCUIT AND METHOD FOR WIRELESS INFORMATION ACCESS THEREOF - A three-dimensional integrated circuit (3DIC) and wireless information access methods thereof are provided. The proposed 3DIC includes a semiconductor structure, and a wireless power device (WPD) formed on the semiconductor structure for wirelessly receiving a power for operating a function selected from a group consisting of probing the semiconductor structure, testing the semiconductor structure and accessing a first information from the semiconductor structure. | 02-13-2014 |
Kuo-An Yen, Hsinchu TW
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20080267558 | OPTICAL SWITCH - An optical switch including an alignment head, a first fiber, a second fiber, a third fiber, a wedge, and a displacing means is provided. The alignment head has a base and a cover. The base has a first V-groove, a second V-groove, and a trench linked to the first and the second V-grooves. An end of the first fiber and that of the second fiber are mounted in the first and the second V-grooves, respectively. The cover is mounted on the base to secure the ends of the first and the second V-grooves. An end of the third fiber located in the trench is aligned to that of the first fiber. The wedge located beside the base has an incline. The displacing means set under the wedge is capable of aligning the end of the third fiber to that of the second fiber by moving the wedge. | 10-30-2008 |
Kuo-Chao Yen, Hsinchu TW
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20150123477 | POWER INTEGRATED DEVICE AND POWER CONTROL METHOD THEREOF - The present invention provides a power integrated device including a detection circuit and a determination circuit. The detection circuit detects whether first and second connection ports are coupled to a power source and produce first and second valid signals, respectively, and detect whether the power source coupled to the first and second connection ports meet first or second predetermined power values and produce first and second power spec signals, respectively. The determination circuit produces a system power-control signal according to the first valid signal, the second valid signal, the first power spec signal and the second power spec signal to turn on or turn off the power integrated device. | 05-07-2015 |
Li-Jean Yen, Hsinchu TW
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20120299779 | Antenna with Multiple Resonating Conditions - An antenna with multiple resonating conditions includes a grounding element electrically connected to a ground, a radiating element, a connection element electrically connected between the grounding element and the radiating element, a feed-in element electrically connected between the connection element and the grounding element for receiving feed-in signals, and a radiating-condition generating element electrically connected to the grounding element and extending from the grounding element to the radiating element. | 11-29-2012 |
20120313819 | Active Antenna and Electronic Device - An active antenna with a wide bandwidth coverage is disclosed. The active antenna comprises a radiator, comprising at least two feeding points corresponding to two modes, a switch control circuit, for generating a switch control signal, and an active switch circuit, for switching to be coupled to one of the at least two feeding points. | 12-13-2012 |
Li-Wei Yen, Hsinchu TW
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20130187543 | DYNAMIC DAMPER AND LIGHTING DRIVING CIRCUIT COMPRISING THE DYNAMIC DAMPER - A dynamic damper in a lighting driving circuit for limiting an inrush current includes a damper circuit and a timing circuit comprising capacitor. The damper circuit is connected to the timing circuit. When an input voltage is provided to the dynamic damper, the capacitor begins to be charged and the capacitance-voltage of the capacitor rises. The damper circuit enters to a first working state and generates a dynamic damper resistor value. When the capacitance-voltage of the capacitor is greater than a first threshold voltage, the damper circuit enters to a second working state and the dynamic damper resistor value begins to decrease. When the capacitance-voltage of the capacitor is greater than a second threshold voltage, the damper circuit enters to a short-circuit state, and the dynamic damper resistor value decreases to zero to facilitate the normal work of the power source converter. | 07-25-2013 |
Ming-Chou Yen, Hsinchu TW
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20150160046 | SIGNAL PROCESSING APPARATUS FOR PROCESSING TIME VARIANT SIGNAL - A signal processing apparatus includes an adder and a weighting integrator. The adder receives a first input signal and an integrated signal, and generates a first output signal. The first output signal is obtained by subtracting the integrated signal from the first input signal. The weighting integrator receives the first output signal, and generates the integrated signal. The weighting integrator includes a weighting function generator, a multiplier, and an accumulator. The weighting function generator receives the first output signal. When the first output signal crosses a zero crossing point, the weighting function generator generates a weighting function. The multiplier performs a multiplication on the weighting function and the first output signal. The accumulator is connected to the multiplier for accumulating the product of the weighting function and the first output signal, thereby generating the integrated signal. | 06-11-2015 |
20150188525 | DC OFFSET CANCELLATION CIRCUIT - A DC offset cancellation circuit is provided. A first DC current and a first sensing current are superposed with each other to generate a first superposed current. A second DC current and a second sensing current are superposed with each other to generate a second superposed current. The first superposed current is converted into a first voltage signal. The second superposed current is converted into a second voltage signal. After the first voltage signal and the second voltage signal are received by a differential amplifier, an output signal is generated. The output signal is processed into a DC value. The DC value is converted into a DC current signal. The superposing unit generates the first DC current and the second DC current according to the DC current signal, so that the first superposed current and the second superposed current have the same DC offset. | 07-02-2015 |
Ming-Yu Yen, Hsinchu TW
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20100127424 | Fabrication of metal meshes/carbon nanotubes/polymer composite bipolar plates for fuel cell - A reinforced mesh structure containing bipolar plate for a polymer electrolyte membrane fuel cell (PEMFC) is prepared as follows: a) compounding vinyl ester and graphite powder to form bulk molding compound (BMC) material, the graphite powder content ranging from 60 wt % to 95 wt % based on the total weight of the graphite powder and vinyl ester, wherein 0.05-10 wt % reactive carbon nanotubes modified by acyl chlorination-amidization reaction, based on the weight of the vinyl ester resin, are added during the compounding; b) molding the BMC material from step a) with a metallic net being embedded in the molded BMC material to form a bipolar plates having a desired shaped at 80-200° C. and 500-4000 psi. | 05-27-2010 |
20100127428 | Fabrication of carbon nanotubes reinforced semi-crystalline polymer composite bipolar plates for fuel cell - A composite bipolar plate for a polymer electrolyte membrane membrane fuel cell (PEMFC) is prepared as follows: a) melt compounding a polypropylene resin and graphite powder at 100-250° C. and 30-150 rpm to form a melt compounding material, the graphite powder content ranging from 50 wt % to 95 wt % based on the total weight of the graphite powder and the polypropylene resin, and the polypropylene resin being a homopolymer of propylene or a copolymer of propylene and ethylene, wherein 0.05-20 wt % carbon nanotubes, based on the weight of the polypropylene resin, are added during the melt compounding; and b) molding the melt compounding material from step a) to form a bipolar plate having a desired shaped at 100-250° C. and 500-4000 psi. | 05-27-2010 |
20100154871 | Composite substrate for counter electrode of dye-sensitized solar cell - A substrate for counter electrode of dye-sensitized solar cell is made of a composite material, which is prepared by: a) compounding vinyl ester and graphite powder to form bulk molding compound (BMC) material, the graphite powder content ranging from 60 wt % to 95 wt % based on the total weight of the graphite powder and vinyl ester, wherein 0.01-10 wt % of an electrically conductive filler, based on the weight of the vinyl ester resin, is optionally added during the compounding; b) molding the BMC material from step a) to form a substrate for the counter electrode having a desired shaped at 80-200° C. and 500-4000 psi. | 06-24-2010 |
20110315934 | Method for fabrication of functionalized graphene reinforced composite conducting plate - A graphite-vinyl ester resin composite conducting plate is prepared in the present invention. The conducting plate can be used as a bipolar plate for a fuel cell, counter electrode for dye-sensitized solar cell and electrode of vanadium redox battery. The conducting plate is prepared as follows: a) compounding vinyl ester resin and graphite powder to form a bulk molding compound (BMC) material, the graphite powder content ranging from 70 wt % to 95 wt % based on the total weight of the graphite powder and vinyl ester, wherein 0.01-15 wt % functionalized graphene, based on the weight of the vinyl ester resin, are added during the compounding; b) molding the BMC material from step a) to form a conducting plate having a desired shaped at 80-250° C. and 500-4000 psi. | 12-29-2011 |
Shao-I Yen, Hsinchu TW
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20090145741 | Method for catalytic treating perfluorocompound gas including particle removing unit - The present invention relates to a method for treating fluoro-containing and silicon-containing gas. The method comprises treating the gas with thermal-treating, particles-treating, catalyst-treating, and acid-removing sequentially to remove perfluorocompounds. The invention achieves results of reducing the working temperature, increasing the lifetime of the catalyst, reducing the operating cost of the system, and increasing the applications of the catalyst in the aspect of fluoride-containing gas, silicon-containing gas and particles containing gas treatment by sequential treating. | 06-11-2009 |
20120058033 | METHOD FOR CATALYTIC TREATING PERFLUOROCOMPOUND GAS INCLUDING PARTICLE REMOVING UNIT - The present invention relates to a method for treating fluoro-containing and silicon-containing gas. The method comprises treating the gas with thermal-treating, particles-treating, catalyst-treating, and acid-removing sequentially to remove perfluorocompounds. The invention achieves results of reducing the working temperature, increasing the lifetime of the catalyst, reducing the operating cost of the system, and increasing the applications of the catalyst in the aspect of fluoride-containing gas, silicon-containing gas and particles containing gas treatment by sequential treating. | 03-08-2012 |
Sheng-Horng Yen, Hsinchu TW
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20120007042 | LIGHT EMITTING DEVICE WITH A SINGLE QUANTUM WELL ROD - A light emitting device comprising a first semiconductor layer, a second semiconductor layer and a quantum well layer, wherein the first semiconductor layer and the second semiconductor layer are disposed on the opposite sides of the quantum well layer, the quantum well layer comprising a plurality of quantum well rods which are separated from each other, and each of the quantum well rods has only one quantum well. | 01-12-2012 |
20130280832 | FABRCATION METHOD OF LIGHT-EMITTING DEVICE - A fabrication method of a light-emitting device comprises providing a growth substrate; forming a protective layer on a first surface of the growth substrate; and forming a first semiconductor layer on a second surface of the growth substrate opposite to the first surface, wherein the coefficient of thermal expansion of the growth substrate is smaller than that of the protective layer and the first semiconductor layer. | 10-24-2013 |
20140103290 | LIGHT-EMITTING DEVICE - A light-emitting device comprises a first semiconductor layer; a second semiconductor layer; a light-emitting layer formed between the first semiconductor layer and the second semiconductor layer; a first electron blocking layer formed between the first semiconductor layer and the light-emitting layer; and a second electron blocking layer formed between the second semiconductor layer and the light-emitting layer, wherein the thickness of the second electron blocking layer is not equal to that of the first electron blocking layer, and/or the band gap energy of the second electron blocking layer is not equal to that of the first electron blocking layer. | 04-17-2014 |
Sheng-Hsiang Yen, Hsinchu TW
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20140062367 | DETECTION CONTROL SYSTEM - A detection control system includes a sensing unit, a control module and a driving module for a motor including a rotor and a stator. The sensing unit electrically connects the motor to sense a first and a second magnetic pole of the rotor cross a chip disposed between the rotor and the stator; a third magnetic pole is alternated to a forth magnetic pole of the stator to generate a sensing signal. A detection unit of the control module detects a kickback voltage value generated by a first current value changing to a second current value to calculate a minimum current value to generate a detecting signal. A timing unit receives the sensing and the detecting signal to calculate a first and a second period of time, and a discharging time. The driving module drives the rotor by receiving a control signal the control unit generates by controlling an alternating time. | 03-06-2014 |
Shih-Hsuan Yen, Hsinchu TW
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20140052977 | ELECTRONIC APPARATUS AND METHOD FOR BOOTING THE SAME - An electronic apparatus includes an operating system and a control circuit. The operating system is driven by an output command signal to execute one of plural different boot procedures. The control circuit detects an input command signal correspondingly generated when a power push-button is pressed down in a condition of the operating system being deactivated, and generates the output command signal according to the detected input command signal. Moreover, a method for booting an electronic apparatus is also disclosed herein. | 02-20-2014 |
20150026367 | COMPUTER DEVICE AND IDENTIFICATION DEVICE THEREIN - An identification device includes a processing unit. The processing unit is electrically connected between a control circuit and a connection port, in which the processing unit is configured for detecting and identifying an external device which is connected to the port; when the processing unit identifies the external device as a first external device, the processing unit is configured for blocking information transmission between the first external device and the control circuit and when the processing unit identifies the external device as a second external device, the processing unit is configured for enabling the information transmission between the second external device and the control circuit. | 01-22-2015 |
Ta-Jen Yen, Hsinchu TW
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20140131559 | IMAGING METAMATERIAL - The present invention is related to an imaging metamaterial, comprising at least one resonant unit with a controllable split structure that comprises at least one gap and at least one segment, wherein the segment is connected by a node or separated by the gap. The present invention also provides a method for preparing an imaging metamaterial. The present invention further provides an imaging apparatus. | 05-15-2014 |
Ta-Lung Yen, Hsinchu TW
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20150061953 | Antenna and Electronic Device - An antenna for an electronic device includes a grounding sheet for providing grounding, a metal sheet having a shape substantially corresponding to a rectangular with a first section at a first corner, a feed-in unit electrically connected to the metal sheet corresponding to a second corner adjacent to the first corner of the rectangular, for transmitting electromagnetic energy, and a shorting wall electrically connected to the grounding sheet and a first side of the metal sheet, for forming a resonating cavity, wherein the first side is opposite to a second side of the metal sheet, and the second side is adjacent to the first and second corners, wherein a length and a width of the rectangular are respectively related to frequency ranges of at least one operating frequency band, and the first section increases a frequency range of a first frequency band of the operating frequency bands. | 03-05-2015 |
Ting-Chung Yen, Hsinchu TW
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20150366892 | USE OF HEAT SHOCK PROTEIN INHIBITOR IN PREPARING PHARMACEUTICAL COMPOSITION FOR TREATING HEPATITIS AND HEPATOMA - The present invention is directed to a use of a heat shock protein inhibitor in preparing pharmaceutical composition for treating hepatitis by scavenging hepatitis B virus-infected cells. The heat shock protein inhibitor is selected from a group including VER-155008, Pifithrin-μ, and pharmaceutical acceptable salts thereof. The present invention is also directed to a use of a heat shock protein inhibitor in preparing pharmaceutical composition for treating hepatoma. | 12-24-2015 |
Wei-Yu Yen, Hsinchu TW
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20100102295 | LIGHT EMITTING DEVICE - This invention discloses a light-emitting device comprising a semiconductor stack layer having an active layer of a multiple quantum well (MQW) structure comprising alternate stack layers of quantum well layers and barrier layers, wherein the barrier layers comprise at least one doped barrier layer and one undoped barrier layer. The doped barrier layer can improve the carrier mobility of the electron holes and increase the light-emitting area and the internal quantum efficiency of the active layer. | 04-29-2010 |
20120286317 | LIGHT-EMITTING ELEMENT AND THE MANUFACTURING METHOD THEREOF - A light-emitting element includes a light-emitting stack includes: a first semiconductor layer; an active layer formed on the first semiconductor layer; and a second semiconductor layer formed on the active layer; a recess structure formed through the second semiconductor layer, the active layer, and extended in the first semiconductor layer, wherein the first semiconductor layer includes a contact region defined by the recess structure; a first electrode structure including a first contact portion on the contact region of the first semiconductor layer, and a second contact portion laterally extended from the first contact portion into the first semiconductor layer; and a dielectric layer formed on side surfaces of the second semiconductor layer and the active layer to insulate the second semiconductor layer and the active layer from the first contact portion. | 11-15-2012 |
20130119429 | LIGHT-EMITTING ELEMENT AND THE MANUFACTURING METHOD THEREOF - A light-emitting element includes a light-emitting stack includes: a first semiconductor layer; an active layer formed on the first semiconductor layer; and a second semiconductor layer formed on the active layer; a recess structure formed through the second semiconductor layer, the active layer, and extended in the first semiconductor layer, wherein the first semiconductor layer includes a contact region defined by the recess structure; a first electrode structure including a first contact portion on the contact region of the first semiconductor layer, and a second contact portion laterally extended from the first contact portion into the first semiconductor layer; and a dielectric layer formed on side surfaces of the second semiconductor layer and the active layer to insulate the second semiconductor layer and the active layer from the first contact portion. | 05-16-2013 |
Wen-Chun Yen, Hsinchu TW
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20130202813 | PROCESS OF PREPARING GRAPHENE BY LOW-FREQUENCY ELECTROMAGNETIC WAVE - The present invention relates to a process of inducing grapheme by low-frequency electromagnetic wave, which includes the following steps: (A) providing a substrate; (B) optionally forming a metal layer on the substrate; (C) providing a carbon source to form a carbon-containing layer locating on the metal layer; and (D) performing a treatment of the carbon-containing layer formed on the metal layer by using low-frequency electromagnetic wave, wherein the low-frequency electromagnetic wave is provided by microwave device. The electromagnetic energy from the microwave field device is converted to thermal energy by microwave absorber (for example, SiC) as a media to directly heat the carbon-containing layer, so that carbon atoms get kinetic energy to form grapheme layers on the surface of the metal layer and between the metal layer and the substrate. | 08-08-2013 |
20140252296 | RESISTIVE RANDOM-ACCESS MEMORY - The present invention relates to a resistive random-access memory, including: a bottom electrode; a resistive switch layer disposed on the bottom electrode, including a first switch layer, a second switch layer, and a filament path control layer, wherein the first switch layer is interposed between the bottom electrode and the filament path control layer, and the filament path control layer is interposed between the first switch layer and the second switch layer; and a top electrode disposed on the second switch layer, wherein the filament path control layer includes one or more micro-pores. The present invention also relates to a memory array which includes a substrate and a plurality of the above-mentioned resistive random access memories, wherein the resistive random access memories are disposed on the substrate. | 09-11-2014 |
Yuting Yen, Hsinchu TW
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20160091224 | COMPLEXED NANOPARTICLE MATERIAL, COMPOSITION AND USE COMPRISING THE SAME FOR HEATING LIQUID - The present invention relates to complexed nanoparticle materials including metal sub-nanoparticles and chalcopyrite nano cores. The metal sub-nanoparticles are distributed on the surfaces of chalcopyrite nano cores. The complexed nanoparticle materials have improved light absorption property because the surface plasmon resonance of metal nanoparticle to effectively convert light into thermal energy. The complexed nanoparticle materials further include dispersants which are attached on the surface of the complexed nanoparticle materials. A solvent mixture with similar polarity can be separated by adding the complexed nanoparticle materials with dispersants, and then irradiating sunlight through a focusing component to the solvent mixture. | 03-31-2016 |