Patent application number | Description | Published |
20100305691 | Prosthetic Heart Valves, Scaffolding Structures, and Systems and Methods for Implantation of Same - Prosthetic valves and their component parts are described, as are prosthetic valve delivery devices and methods for their use. The prosthetic valves are particularly adapted for use in percutaneous aortic valve replacement procedures. The delivery devices are particularly adapted for use in minimally invasive surgical procedures. | 12-02-2010 |
20110082540 | Prosthetic Heart Valves, Scaffolding Structures, and Systems and Methods for Implantation of Same - Prosthetic valves and their component parts are described, as are prosthetic valve delivery devices and methods for their use. The prosthetic valves are particularly adapted for use in percutaneous aortic valve replacement procedures. The delivery devices are particularly adapted for use in minimally invasive surgical procedures. | 04-07-2011 |
20120136432 | Prosthetic Heart Valves, Scaffolding Structures, and Systems and Methods for Implantation of Same - Prosthetic valves and their component parts are described, as are prosthetic valve delivery devices and methods for their use. The prosthetic valves are particularly adapted for use in percutaneous aortic valve replacement procedures. The delivery devices are particularly adapted for use in minimally invasive surgical procedures. | 05-31-2012 |
20120150289 | Methods and Devices for Delivery of Prosthetic Heart Valves and Other Prosthesis - Prosthetic valves and their component parts are described, as are prosthetic valve delivery devices and methods for their use. The prosthetic valves are particularly adapted for use in percutaneous aortic valve replacement procedures. The delivery devices are particularly adapted for use in minimally invasive surgical procedures. The preferred delivery device includes a catheter having a deployment mechanism attached to its distal end, and a handle mechanism attached to its proximal end. A plurality of tethers are provided to selectively restrain the valve during deployment. A number of mechanisms for active deployment of partially expanded prosthetic valves are also described. | 06-14-2012 |
20120165926 | Methods and Devices for Delivery of Prosthetic Heart Valves and Other Prosthetics - Prosthetic valves and their component parts are described, as are prosthetic valve delivery devices and methods for their use. The prosthetic valves are particularly adapted for use in percutaneous aortic valve replacement procedures. The delivery devices are particularly adapted for use in minimally invasive surgical procedures. The preferred delivery device includes a catheter having a deployment mechanism attached to its distal end, and a handle mechanism attached to its proximal end. A plurality of tethers are provided to selectively restrain the valve during deployment. A number of mechanisms for active deployment of partially expanded prosthetic valves are also described. | 06-28-2012 |
20130090727 | Methods and Devices for Delivery of Prosthetic Heart Valves and Other Prosthetics - Prosthetic valves and their component parts are described, as are prosthetic valve delivery devices and methods for their use. The prosthetic valves are particularly adapted for use in percutaneous aortic valve replacement procedures. The delivery devices are particularly adapted for use in minimally invasive surgical procedures. The preferred delivery device includes a catheter having a deployment mechanism attached to its distal end, and a handle mechanism attached to its proximal end. A plurality of tethers are provided to selectively restrain the valve during deployment. A number of mechanisms for active deployment of partially expanded prosthetic valves are also described. | 04-11-2013 |
20140222135 | PROSTHETIC HEART VALVES, SCAFFOLDING STRUCTURES, AND SYSTEMS AND METHODS FOR IMPLANTATION OF SAME - Prosthetic valves and their component parts are described, as are prosthetic valve delivery devices and methods for their use. The prosthetic valves are particularly adapted for use in percutaneous aortic valve replacement procedures. The delivery devices are particularly adapted for use in minimally invasive surgical procedures. | 08-07-2014 |
20140235361 | Torque Shaft and Torque Shaft Drive - Torque shafts and other related systems and methods are described herein. The torque shafts are both flexible and capable of transmitting torque. The torque shafts are useful for procedures that require torque and pushability to drive or deploy a device. The flexibility and pushability of the torque shafts enable them to curve along a tortuous path, and the torque transferring capability of the shafts enable them to transmit torque along the shaft. | 08-21-2014 |
20140316517 | METHODS AND DEVICES FOR DELIVERY OF PROSTHETIC HEART VALVES AND OTHER PROSTHETICS - Prosthetic valves and their component parts are described, as are prosthetic valve delivery devices and methods for their use. The prosthetic valves are particularly adapted for use in percutaneous aortic valve replacement procedures. The delivery devices are particularly adapted for use in minimally invasive surgical procedures. The preferred delivery device includes a catheter having a deployment mechanism attached to its distal end, and a handle mechanism attached to its proximal end. A plurality of tethers are provided to selectively restrain the valve during deployment. A number of mechanisms for active deployment of partially expanded prosthetic valves are also described. | 10-23-2014 |
Patent application number | Description | Published |
20090053888 | Method of depositing a diffusion barrier layer which provides an improved interconnect - A method of depositing a duffusion barrier layer with overlying conductive layer or fill which lowers resistivity of a semiconductor device interconnect. The lower resistivity is achieved by inducing the formation of alpha tantalum within a tantalum-comprising barrier layer. | 02-26-2009 |
20090159439 | Apparatus for wafer level arc detection at an RF bias impedance match to the pedestal electrode - Wafer level arc detection is provided in a plasma reactor using an RF transient sensor coupled to a threshold comparator, and a system controller responsive to the threshold comparator. | 06-25-2009 |
20090233438 | SELF-IONIZED AND INDUCTIVELY-COUPLED PLASMA FOR SPUTTERING AND RESPUTTERING - A magnetron sputter reactor for sputtering deposition materials such as tantalum, tantalum nitride and copper, for example, and its method of use, in which self-ionized plasma (SIP) sputtering and inductively coupled plasma (ICP) sputtering are promoted, either together or alternately, in the same or different chambers. Also, bottom coverage may be thinned or eliminated by ICP resputtering in one chamber and SIP in another. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. ICP is provided by one or more RF coils which inductively couple RF energy into a plasma. The combined SIP-ICP layers can act as a liner or barrier or seed or nucleation layer for hole. In addition, an RF coil may be sputtered to provide protective material during ICP resputtering. In another chamber an array of auxiliary magnets positioned along sidewalls of a magnetron sputter reactor on a side towards the wafer from the target. The magnetron preferably is a small, strong one having a stronger outer pole of a first magnetic polarity surrounding a weaker outer pole of a second magnetic polarity and rotates about the central axis of the chamber. The auxiliary magnets preferably have the first magnetic polarity to draw the unbalanced magnetic field component toward the wafer. The auxiliary magnets may be either permanent magnets or electromagnets. | 09-17-2009 |
20100012029 | APPARATUS FOR CONTROLLING RADIAL DISTRIBUTION OF PLASMA ION DENSITY AND ION ENERGY AT A WORKPIECE SURFACE BY MULTI-FREQUENCY RF IMPEDANCE TUNING - In a physical vapor deposition plasma reactor, a multi-frequency impedance controller is coupled between RF ground and one of (a) the bias electrode, (b) the sputter target, the controller providing adjustable impedances at a first set of frequencies, said first set of frequencies including a first set of frequencies to be blocked and a first set of frequencies to be admitted. The first multi-frequency impedance controller includes a set of band pass filters connected in parallel and tuned to said first set of frequencies to be admitted, and a set of notch filters connected in series and tuned to said first set of frequencies to be blocked. | 01-21-2010 |
20100012480 | METHOD FOR CONTROLLING RADIAL DISTRIBUTION OF PLASMA ION DENSITY AND ION ENERGY AT A WORKPIECE SURFACE BY MULTI-FREQUENCY RF IMPEDANCE TUNING - The method of performing physical vapor deposition on a workpiece includes performing at least one of the following: (a) increasing ion density over a workpiece center while decreasing ion density over a workpiece edge by decreasing impedance to ground at a target source power frequency f | 01-21-2010 |
20100155223 | Electromagnet array in a sputter reactor - A multi-step process performed in a plasma sputter chamber including sputter deposition from the target and argon sputter etching of the substrate. The chamber includes a quadruple electromagnetic coil array coaxially arranged in a rectangular array about a chamber axis outside the sidewalls of a plasma sputter reactor in back of an RF coil within the chamber. The coil currents can be separately controlled to produce different magnetic field distributions, for example, between a sputter deposition mode in which the sputter target is powered to sputter target material onto a wafer and a sputter etch mode in which the RF coil supports the argon sputtering plasma. A TaN/Ta barrier is first sputter deposited with high target power and wafer bias. Argon etching is performed with even higher wafer bias. A flash step is applied with reduced target power and wafer bias. | 06-24-2010 |
20110209995 | Physical Vapor Deposition With A Variable Capacitive Tuner and Feedback Circuit - Apparatus and methods for performing plasma processing on a wafer supported on a pedestal are provided. The apparatus can include a pedestal on which the wafer can be supported, a variable capacitor having a variable capacitance, a motor attached to the variable capacitor which varies the capacitance of the variable capacitor, a motor controller connected to the motor that causes the motor to rotate, and an output from the variable capacitor connected to the pedestal. A desired state of the variable capacitor is associated with a process recipe in a process controller. When the process recipe is executed the variable capacitor is placed in the desired state. | 09-01-2011 |
20110220488 | Apparatus and Method for Improved Darkspace Gap Design in RF Sputtering Chamber - Improved designs of target assemblies and darkspace shields are disclosed. Methods of improving darkspace gap in sputtering chambers and sputtering chambers having an improved darkspace gap are also disclosed. Disclosed is a target assembly having a substantially coplanar backing plate and a target are vertically spaced from the darkspace shield. | 09-15-2011 |
20130168232 | COILS FOR GENERATING A PLASMA AND FOR SPUTTERING - A sputtering coil for a plasma chamber in a semiconductor fabrication system is provided. The sputtering coil couples energy into a plasma and also provides a source of sputtering material to be sputtered onto a workpiece from the coil to supplement material being sputtered from a target onto the workpiece. Alternatively a plurality of coils may be provided, one primarily for coupling energy into the plasma and the other primarily for providing a supplemental source of sputtering material to be sputtered on the workpiece. | 07-04-2013 |
20140305802 | SELF-IONIZED AND INDUCTIVELY-COUPLED PLASMA FOR SPUTTERING AND RESPUTTERING - A magnetron sputter reactor for sputtering deposition materials such as tantalum, tantalum nitride and copper, for example, and its method of use, in which self-ionized plasma (SIP) sputtering and inductively coupled plasma (ICP) sputtering are promoted, either together or alternately, in the same or different chambers. Also, bottom coverage may be thinned or eliminated by ICP resputtering in one chamber and SIP in another. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. ICP is provided by one or more RF coils which inductively couple RF energy into a plasma. The combined SIP-ICP layers can act as a liner or barrier or seed or nucleation layer for hole. In addition, an RF coil may be sputtered to provide protective material during ICP resputtering. In another chamber an array of auxiliary magnets positioned along sidewalls of a magnetron sputter reactor on a side towards the wafer from the target. The magnetron preferably is a small, strong one having a stronger outer pole of a first magnetic polarity surrounding a weaker outer pole of a second magnetic polarity and rotates about the central axis of the chamber. The auxiliary magnets preferably have the first magnetic polarity to draw the unbalanced magnetic field component toward the wafer. The auxiliary magnets may be either permanent magnets or electromagnets. | 10-16-2014 |
Patent application number | Description | Published |
20120225558 | METHODS FOR CONTACT CLEAN - Methods and apparatus for removing oxide from a surface, the surface comprising at least one of silicon and germanium, are provided. The method and apparatus are particularly suitable for removing native oxide from a metal silicide layer of a contact structure. The method and apparatus advantageously integrate both the etch stop layer etching process and the native oxide removal process in a single chamber, thereby eliminating native oxide growth or other contaminates redeposit during the substrate transfer processes. Furthermore, the method and the apparatus also provides the improved three-step chemical reaction process to efficiently remove native oxide from the metal silicide layer without adversely altering the geometry of the contact structure and the critical dimension of the trenches or vias formed in the contact structure. | 09-06-2012 |
20140196746 | IN SITU CHAMBER CLEAN WITH INERT HYDROGEN HELIUM MIXTURE DURING WAFER PROCESS - Embodiments of the present invention generally relate to a method for cleaning a processing chamber during substrate processing. During a first substrate processing step, a plasma is formed from a gas mixture of argon, helium, and hydrogen in the processing chamber. In a second substrate processing step, an argon plasma is formed in the processing chamber. | 07-17-2014 |
20140262043 | SUBSTRATE SUPPORT FOR PLASMA ETCH OPERATIONS - Methods and apparatus for processing substrates are disclosed herein. In some embodiments, a substrate support to support a substrate in a processing chamber includes a dielectric insulator plate; a conductive plate supported on the dielectric insulator plate, the conductive plate comprising a top surface and a bottom surface defining a thickness between the top surface and the bottom surface, wherein an edge portion of the conductive plate tapers in a radially outward direction; and a dielectric plate comprising a substrate support surface disposed upon the top surface of the conductor plate. | 09-18-2014 |
20140262764 | METHODS AND APPARATUS FOR REDUCING SPUTTERING OF A GROUNDED SHIELD IN A PROCESS CHAMBER - Methods and apparatus for physical vapor deposition are provided herein. In some embodiments, a process kit shield for use in a physical vapor deposition chamber may include an electrically conductive body having one or more sidewalls defining a central opening, wherein the body has a ratio of a surface area of inner facing surfaces of the one or more sidewalls to a height of the one or more sidewalls of about 2 to about 3. | 09-18-2014 |
20150048739 | Elongated Capacitively Coupled Plasma Source For High Temperature Low Pressure Environments - A modular plasma source assembly for use with a processing chamber is described. The assembly includes an RF hot electrode with an end dielectric and a sliding ground connection positioned adjacent the sides of the electrode. A seal foil connects the sliding ground connection to the housing to provide a grounded sliding ground connection separated from the hot electrode by the end dielectric. A coaxial feed line passes through a conduit into the RF hot electrode isolated from the processing environment so that the coaxial RF feed line is at atmospheric pressure while the plasma processing region is at reduced pressure. | 02-19-2015 |
Patent application number | Description | Published |
20120084689 | Managing Items in a User Interface - User interface changes related to moving items in a user interface are disclosed. An operation (e.g., a drag operation) can be initiated on selected items by moving a cursor or pointing device in the user interface, and an animation can be presented illustrating representations of the selected items moving from their respective original locations toward a current location of the cursor or pointing device and forming a cluster in proximity to the current location of the cursor or pointing device. As the cluster of items is moved over a container object in the user interface, the representations of the items can adopt the appearance style defined by that container object. The representations of the items can also be shown to depart from the cluster and move toward anticipated locations of the items in the container object as a preview of a drop operation into the container object. | 04-05-2012 |
20120311490 | METHODS FOR LAUNCHING APPLICATIONS WITH EFFICIENT USER IMPRESSION - According to one embodiment, a first window is generated based on window metadata obtained from a snapshot of a second window while an application is starting, where the second window was presented by the application and the snapshot was captured during a previous execution of the application. The ownership of the first window is transferred to the application after the application has finished starting, such that the application can interact with the first window without having to creating a new window. | 12-06-2012 |
20130332867 | INPUT DEVICE EVENT PROCESSING - A background thread can be used to process events, e.g., a touch, gesture, pinch, or swipe, that are received on a touch sensitive device, or events, e.g., mouse scroll wheel events that are received on a input device, e.g., a mouse. The background thread can be used to process events when a main thread assigned to the Graphical User Interface (GUI) is interrupted. In such situations, the background thread can continue processing events. In cases where the main thread is interrupted and the event is scroll input, the background thread can draw content on the GUI in response to the scroll, so that the response to the scroll input observed by the user is unaffected by the interrupted main thread. By processing events and drawing content using the background thread while the main thread is blocked, the GUI can be navigated without having the user experience a stall or stutter. | 12-12-2013 |
Patent application number | Description | Published |
20140304643 | Multiple Displays For Displaying Workspaces - A first workspace, which may include one or more windows, may be associated with a first display device. A second workspace, which may also include one or more windows, may be associated with a second display device. The first and second workspaces may be provided for display to the first and second display devices, respectively. The first and second display devices may be independent such that manipulation a window of the first workspace across a coordinate location of the second display device does not affect the second display device. | 10-09-2014 |
20140365957 | USER INTERFACES FOR MULTIPLE DISPLAYS - A set of user interfaces for a data processing system that operates with two or more display devices coupled to the system. In one embodiment, in response to moving a first window between two displays, the first window is displayed, as it straddles the two displays, differently on the two displays. For example, while a reference point (e.g. a cursor) on the window remains on a first display, a first portion of the window on the first display is displayed normally while a second portion on the second display is displayed with more translucence (more transparency) than the first portion; when the references point crosses to the second display, the first portion becomes more translucent than the second portion. | 12-11-2014 |
Patent application number | Description | Published |
20080317053 | LOAD-BALANCED NSAPI ALLOCATION FOR iWLAN - In one embodiment, a load balancer receives a message from a tunnel termination gateway (TTG) associated with a mobile device. The load balancer may receive messages from a plurality of TTGs. A gateway node in a plurality of gateway nodes in which to send the message is determined. The load balancer then assigns a NSAPI for use by the gateway node. For example, the NSAPI may be associated with a tunnel that is generated between the TTG and GGSN. The load balancer ensures that the assigned NSAPI is not currently in use at the gateway node. Thus, no overlapping of NSAPIs may occur even though the load balancer is processing messages from multiple TTGs for multiple gateway nodes. | 12-25-2008 |
20090023426 | INTELLIGENT REAL ACCESS POINT NAME (APN) SELECTION USING VIRTUAL APNS - In one embodiment, a first access request is received from a mobile device. The access request may be received through a first access medium for a virtual access point name (APN). A session is created with a service using a first real access point name (APN) for the mobile device. A second access request is received through a second type of access medium. The request may be received through a second virtual APN. A session is determined that is active for the mobile device through the first access medium and the second access request is assigned the first real APN even though the request is received through a second access medium. The continuity of the connection may then be maintained because the first real APN is still being used. In this case, a handoff of the connection from the first access network to the second access network is performed while the connection to the service is maintained through the first real APN. | 01-22-2009 |
20130279337 | LOAD-BALANCED NSAPI ALLOCATION FOR iWLAN - In one embodiment, a load balancer receives a message from a tunnel termination gateway (TTG) associated with a mobile device. The load balancer may receive messages from a plurality of TTGs. A gateway node in a plurality of gateway nodes in which to send the message is determined. The load balancer then assigns a NSAPI for use by the gateway node. For example, the NSAPI may be associated with a tunnel that is generated between the TTG and GGSN. The load balancer ensures that the assigned NSAPI is not currently in use at the gateway node. Thus, no overlapping of NSAPIs may occur even though the load balancer is processing messages from multiple TTGs for multiple gateway nodes. | 10-24-2013 |
Patent application number | Description | Published |
20120281698 | SYSTEMS AND METHODS FOR MANAGING VIRTUAL SWITCHES - Network switches that are controlled by a controller server may contain ports through which network packets are received and forwarded. An architect may configure the controller server to create virtual switches. Each virtual switch may be formed from a subset of the ports of the network switches. The architect may assign administrators to the virtual switches. The administrators may configure the virtual switches. An administrator may use a command line interface to configure a virtual switch. The administrator may use commands such as a show port command, an access list command, a show access list command, and a membership rule command to manage the virtual switch. The controller server may prevent the administrator from logging on to virtual switches that have been assigned to other administrators. | 11-08-2012 |
20130070762 | SYSTEM AND METHODS FOR CONTROLLING NETWORK TRAFFIC THROUGH VIRTUAL SWITCHES - A network may include network switches with network switch ports that may be coupled to end hosts. The network switches may be controlled by a controller such as a controller server. Virtual switches may be formed using the controller from groups of the network switch ports and the end hosts. Each virtual switch may include virtual interfaces associated with end hosts or network switches. Virtual links may be formed that define network connections between the virtual interfaces and end hosts or between two virtual interfaces. Virtual network policies such as selective packet forwarding, packet dropping, packet redirection, packet modification, or packet logging may be implemented at selected virtual interfaces to control traffic through the communications network. The controller may translate the virtual network policies into network switch forwarding paths that satisfy the virtual network policies. | 03-21-2013 |
20130223444 | SYSTEM AND METHODS FOR MANAGING NETWORK PACKET FORWARDING WITH A CONTROLLER - A network controlled by a controller may include end hosts that are coupled to the switches. The network may be coupled to gateways that interface between the network and an external network. The network may include subnetworks formed from respective portions of the end hosts of the network. The controller may create virtual gateways that interface between each of the subnetworks and the network by providing the end hosts of each subnetwork with virtual gateway Ethernet addresses. The controller may receive a network packet having a virtual gateway Ethernet address from an end host of a given subnetwork. The network packet may be destined for an end host of an external network or subnetwork. The controller may forward the network packet to the destination end host by redirecting the network packet through a selected gateway or by controlling the switches to perform gateway functions. | 08-29-2013 |
20150138993 | SYSTEMS AND METHODS FOR TESTING NETWORKS WITH A CONTROLLER - A controller may control switches such as physical and software switches in a network. The controller may generate virtual switches from groups of end hosts in forming a virtual network topology. The controller may receive one or more network policy rules that govern network traffic through the switches. For a given network policy rule, the controller may perform a test in determining whether the network satisfies the network policy rule. The test may be performed based on a testing rule identifying test parameters and expected test results. The controller may perform tests in determining whether the network satisfies the testing rule and the corresponding network policy rule. The tests may be performed via simulation at the controller or by injecting a tagged test packet into the network. | 05-21-2015 |