Patent application number | Description | Published |
20100226401 | NITRIDE COMPOUND SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING SAME - The present invention is directed to a production method for a nitride compound semiconductor element including a substrate and a multilayer structure | 09-09-2010 |
20110031522 | NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A nitride-based semiconductor light-emitting device | 02-10-2011 |
20110037088 | NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A nitride-based semiconductor light-emitting device | 02-17-2011 |
20110037089 | NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A nitride-based semiconductor light-emitting device | 02-17-2011 |
20110101372 | NITRIDE SEMICONDUCTOR ELEMENT AND METHOD FOR PRODUCING THE SAME - A nitride-based semiconductor light-emitting device | 05-05-2011 |
20110156048 | NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A nitride-based semiconductor light-emitting device | 06-30-2011 |
20110159667 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A method for fabricating a semiconductor device according to the present invention includes the steps of: growing a p-type gallium nitride-based compound semiconductor layer by performing a metalorganic chemical vapor deposition process in a heated atmosphere so that the crystal-growing plane of the semiconductor layer is an m plane (Step S | 06-30-2011 |
20110234466 | ANTENNA ELEMENT-WAVEGUIDE CONVERTER AND RADIO COMMUNICATION DEVICE USING THE SAME - An antenna element-waveguide converter includes an antenna substrate having, on one surface, an antenna element and rectangular metal plates arranged in a plurality of rows to surround this antenna element, and a waveguide having, at one end, an opening opposed to the one surface of the antenna substrate. Surfaces of the rectangular metal plates and the opening of the waveguide are arranged with a predetermined gap left therebetween in a direction perpendicular to the one surface of the antenna substrate. Thus arranging the antenna substrate and the waveguide avoids a stress due to assembly variations, which can achieve favorable antenna characteristics. | 09-29-2011 |
20110248307 | NITRIDE SEMICONDUCTOR ELEMENT AND METHOD FOR PRODUCING THE SAME - A nitride-based semiconductor light-emitting device | 10-13-2011 |
20110248308 | NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A nitride-based semiconductor light-emitting device | 10-13-2011 |
20110253976 | NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A nitride-based semiconductor light-emitting device | 10-20-2011 |
20110253977 | NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A nitride-based semiconductor light-emitting device | 10-20-2011 |
20110284905 | NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A nitride-based semiconductor light-emitting device | 11-24-2011 |
20120002134 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT, ILLUMINATING DEVICE, LIQUID CRYSTAL DISPLAY DEVICE, METHOD FOR PRODUCING NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING ILLUMINATING DEVICE - An illuminating device according to the present invention includes at least a first nitride-based semiconductor light-emitting element and a second nitride-based semiconductor light-emitting element, in which: the first nitride-based semiconductor light-emitting element and the second nitride-based semiconductor light-emitting element each include a semiconductor chip; the semiconductor chip includes a nitride-based semiconductor multilayer structure | 01-05-2012 |
20120002693 | NITRIDE COMPOUND SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING SAME - The present invention is directed to a production method for a nitride compound semiconductor element including a substrate and a multilayer structure | 01-05-2012 |
20120085986 | GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING DIODE - The light-emitting diode element of this invention includes: an n-type GaN substrate ( | 04-12-2012 |
20120113656 | LIGHT-EMITTING DIODE - A light-emitting diode element includes: an n-type conductive layer | 05-10-2012 |
20120182495 | NITRIDE-BASED SEMICONDUCTOR LIGHT-EMITTING ELEMENT, LIGHTING DEVICE, LIQUID CRYSTAL DISPLAY DEVICE, AND METHOD FOR PRODUCING LIGHTING DEVICE - An illuminating device includes at least first and second nitride-based semiconductor light-emitting elements each having a semiconductor chip with an active layer region. The active layer region is at an angle of 1° or more with an m plane, and an angle formed by a normal line of a principal surface in the active layer region and a normal line of the m plane is 1° or more and 5° or less. The first and second nitride-based semiconductor light-emitting elements have thicnknesses of d | 07-19-2012 |
20120199844 | NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A nitride-based semiconductor device according to the present disclosure includes a nitride-based semiconductor multilayer structure | 08-09-2012 |
20120211725 | NITRIDE SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREFOR - A nitride-based semiconductor device of the present invention includes: a nitride-based semiconductor multilayer structure | 08-23-2012 |
20120319156 | NITRIDE SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREFOR - An exemplary nitride-based semiconductor device includes: a nitride-based semiconductor multilayer structure | 12-20-2012 |
20120326161 | NITRIDE SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREFOR - An exemplary nitride-based semiconductor device includes: a semiconductor multilayer structure | 12-27-2012 |
20130001513 | NITRIDE SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREFOR - A nitride-based semiconductor device includes: a semiconductor multilayer structure | 01-03-2013 |
20130009187 | NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A nitride-based semiconductor light-emitting device | 01-10-2013 |
20130009196 | LIGHT-EMITTING DIODE ELEMENT AND LIGHT-EMITTING DIODE DEVICE - A light-emitting diode element disclosed in the present application, comprises a first semiconductor layer made of a gallium nitride-based compound and having first and second front surface regions and a rear surface, a second semiconductor layer at the first front surface region and an active layer interposed therebetween. A first electrode is provided on a principal surface of the second semiconductor layer. A second electrode is provided at the second front surface region. A third electrode is provided on the rear surface. A thorough hole having openings in the second front surface region and the rear surface is provided in the first semiconductor layer, and a conductor portion is provided in the through hole. | 01-10-2013 |
20130015427 | NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A nitride-based semiconductor light-emitting device | 01-17-2013 |
20130092968 | NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A nitride-based semiconductor light-emitting device | 04-18-2013 |
20130119398 | NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A nitride-based semiconductor light-emitting device | 05-16-2013 |
20130126901 | SEMICONDUCTOR LIGHT-EMITTING ELEMENT - A semiconductor light-emitting element according to the present invention includes: an n-type nitride semiconductor layer | 05-23-2013 |
20130126902 | SEMICONDUCTOR LIGHT EMITTING ELEMENT - A semiconductor light-emitting element according to the present invention includes: an n-type nitride semiconductor layer | 05-23-2013 |
20130146928 | SEMICONDUCTOR LIGHT-EMITTING DEVICE - A nitride semiconductor light-emitting element | 06-13-2013 |
20130177191 | AUDIO RECORDER - An audio recorder having a plurality of microphones including at least a first microphone and a second microphone provided in a first housing and a second housing, respectively, at least one of the first housing and the second housing being rotatably supported, and having an audio recording function in a set prescribed audio recording mode, in which the first housing and the second housing are arranged vertically one above the other, and the audio recorder has means for setting a prescribed audio recording mode in accordance with a relative position of the first microphone and the second microphone. According to this audio recorder, the prescribed audio recording mode is set in accordance with the relative position of the first housing and the second housing. Thus, a desired audio recording mode can be set more intuitively by a user. | 07-11-2013 |
20130234179 | NITRIDE-BASED SEMICONDUCTOR LIGHT-EMITTING ELEMENT - A nitride-based semiconductor light-emitting element disclosed in the present application includes: an active layer having a growing plane which is an m-plane and which is made of a GaN-based semiconductor; and at least one radiation surface at which light from the active layer is to be radiated. The radiation surface has a plurality of protrusions on the m-plane. A base of each of the plurality of protrusions is a region inside a closed curve, and a shape of the base has a major axis and a minor axis. An angle between the major axis and an extending direction of an a-axis of a crystal is not more than 45°. | 09-12-2013 |
20140077223 | STRUCTURE FOR GROWTH OF NITRIDE SEMICONDUCTOR LAYER, STACKED STRUCTURE, NITRIDE-BASED SEMICONDUCTOR ELEMENT, LIGHT SOURCE, AND MANUFACTURING METHOD FOR SAME - A structure for growth of a nitride semiconductor layer which is disclosed in this application includes: a sapphire substrate of which growing plane is an m-plane; and a plurality of ridge-shaped nitride semiconductor layers provided on the growing plane of the sapphire substrate, wherein a bottom surface of a recessed portion provided between respective ones of the plurality of ridge-shaped nitride semiconductor layers is the m-plane of the sapphire substrate, the growing plane of the plurality of ridge-shaped nitride semiconductor layers is an m-plane, and an absolute value of an angle between an extending direction of the plurality of ridge-shaped nitride semiconductor layers and a c-axis of the sapphire substrate is not less than 0° and not more than 35°. | 03-20-2014 |
20140124816 | STRUCTURE FOR GROWTH OF NITRIDE SEMICONDUCTOR LAYER, STACKED STRUCTURE, NITRIDE-BASED SEMICONDUCTOR ELEMENT, LIGHT SOURCE, AND MANUFACTURING METHOD FOR SAME - A structure for growth of a nitride semiconductor layer which is disclosed in this application includes: a sapphire substrate of which growing plane is an m-plane; and a plurality of ridge-shaped nitride semiconductor layers provided on the growing plane of the sapphire substrate, wherein a bottom surface of a recessed portion provided between respective ones of the plurality of ridge-shaped nitride semiconductor layers is the m-plane of the sapphire substrate, the growing plane of the plurality of ridge-shaped nitride semiconductor layers is an m-plane, and an absolute value of an angle between an extending direction of the plurality of ridge-shaped nitride semiconductor layers and a c-axis of the sapphire substrate is not less than 0° and not more than 35°. | 05-08-2014 |
20150162495 | SEMICONDUCTOR LIGHT-EMITTING DEVICE - A nitride semiconductor light-emitting element | 06-11-2015 |
20150179905 | LIGHT EMITTING DEVICE, DISPLAY DEVICE, AND MANUFACTURING METHOD FOR LIGHT EMITTING DEVICE - A light emitting device in which a plurality of LED chips are arranged. Each of the plurality of LED chips include a light emitting region that is formed on a substrate, a first pad electrode that is formed on the substrate, and a through-hole that penetrates the substrate. First wiring that passes through the through-hole of one LED chip and the through-hole of an adjacent LED chip, and electrically connects the first pad electrode of the one LED chip and the first pad electrode of the adjacent LED chip is provided. The tip-end parts of the first wiring that have passed through the through-holes have, at a cross section cut at a plane that is parallel with a principal surface of the substrate, a larger cross-sectional area than the cross-sectional area of the first wiring inside the through-holes. | 06-25-2015 |
20150214197 | LIGHT-EMITTING DEVICE - A light-emitting device includes: a plurality of LED chips each having a light-emitting region, and a first electrode and a second electrode that are electrically connected to light-emitting region; a plurality of substrates each being provided on each of the plurality of LED chips; a plurality of through-holes each penetrating through each of the plurality of substrates; and, a plurality of wires each passing through a first through-hole penetrated through a first substrate of the plurality of the substrates and a second through-hole penetrated through a second substrate adjacent to the first substrate. The one of the plurality of the wires is electrically connected the first electrode or the second electrode of a first LED chip corresponding to the first substrate, to the first electrode or the second electrode of a second LED chip corresponding to the second substrate. | 07-30-2015 |
20150287882 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING DIODE - In a nitride semiconductor light-emitting diode having a shape of an isosceles triangle in a top view, either Group Aa consisting of the following two mathematical formulae (Ia) and (IIa) or Group Ab consisting of the following two mathematical formulae (Ib) and (IIb) is satisfied: | 10-08-2015 |
20150357522 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING DIODE - In a nitride semiconductor light-emitting diode having a shape of an isosceles triangle in a top view, either Group Aa consisting of the following two mathematical formulae (Ia) and (IIa) or Group Ab consisting of the following two mathematical formulae (Ib) and (IIb) is satisfied: | 12-10-2015 |
Patent application number | Description | Published |
20080303062 | SEMICONDUCTOR DEVICE WITH STRAIN IN CHANNEL REGION AND ITS MANUFACTURE METHOD - A first film made of SiGe is formed over a support substrate whose surface layer is made of Si. A gate electrode is formed over a partial area of the first film, and source and drain regions are formed in the surface layer of the support substrate on both sides of the gate electrode. The gate electrode and source and drain regions constitute a first field effect transistor. A first stressor internally containing compressive strain or tensile strain is formed over the first film on both sides of the gate electrode of the first field effect transistor. The first stressor forms strain in a channel region. | 12-11-2008 |
20100163928 | COMPOUND SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME - An i-GaN layer (electron transit layer), an n-GaN layer (compound semiconductor layer) formed over the i-GaN layer (electron transit layer), and a source electrode, a drain electrode and a gate electrode formed over the n-GaN layer (compound semiconductor layer) are provided. A recess portion is formed inside an area between the source electrode and the drain electrode of the n-GaN layer (compound semiconductor layer) and at a portion separating from the gate electrode. | 07-01-2010 |
20100320505 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME, AND AMPLIFIER - A semiconductor device includes a nitride semiconductor layer having a (0001) face and a (000-1) face, formed above a common substrate; a (0001) face forming layer provided partially between the substrate and the nitride semiconductor layer; a source electrode, a drain electrode, and a gate electrode, provided on the nitride semiconductor layer having the (0001) face; and a hole extracting electrode provided on the nitride semiconductor layer having the (000-1) face. | 12-23-2010 |
20120043586 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device includes a substrate, a carrier transit layer disposed above the substrate, a compound semiconductor layer disposed on the carrier transit layer, a source electrode disposed on the compound semiconductor layer, a first groove disposed from the back of the substrate up to the inside of the carrier transit layer while penetrating the substrate, a drain electrode disposed in the inside of the first groove, a gate electrode located between the source electrode and the first groove and disposed on t he compound semiconductor layer, and a second groove located diagonally under the source electrode and between the source electrode and the first groove and disposed from the back of the substrate up to the inside of the carrier transit layer while penetrating the substrate. | 02-23-2012 |
20120138955 | COMPOUND SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A compound semiconductor device includes a substrate; an initial layer formed over the substrate; and a core layer which is formed over the initial layer and contains a Group III-V compound semiconductor. The initial layer is a layer of Group III atoms of the Group III-V compound semiconductor contained in the core layer. | 06-07-2012 |
20120138956 | COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A compound semiconductor device includes: a substrate; an electron transit layer formed over the substrate; an electron supply layer formed over the electron transit layer; and a buffer layer formed between the substrate and the electron transit layer and including Al | 06-07-2012 |
20120139008 | COMPOUND SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME - An i-GaN layer (electron transit layer), an n-GaN layer (compound semiconductor layer) formed over the i-GaN layer (electron transit layer), and a source electrode, a drain electrode and a gate electrode formed over the n-GaN layer (compound semiconductor layer) are provided. A recess portion is formed inside an area between the source electrode and the drain electrode of the n-GaN layer (compound semiconductor layer) and at a portion separating from the gate electrode. | 06-07-2012 |
20120205718 | COMPOUND SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A compound semiconductor device including: a substrate; an electron transit layer formed on and above the substrate; and an electron supply layer formed on and above the electron transit layer, wherein a first region or regions having a smaller thermal expansion coefficient than the electron transit layer and a second region or regions having a larger thermal expansion coefficient than the electron transit layer are mixedly present on a surface of the substrate. | 08-16-2012 |
20120208351 | CLEANING APPARATUS FOR SEMICONDUCTOR MANUFACTURING APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME - A cleaning apparatus for a semiconductor manufacturing apparatus includes: a oxide removal unit that removes an oxide over a surface of a deposit adhered to components of the semiconductor manufacturing apparatus, and a deposit removal unit that removes the deposit after the oxide over the surface is removed by the oxide removal unit. | 08-16-2012 |
20120211760 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME, AND POWER SUPPLY APPARATUS - A semiconductor device includes a nitride semiconductor stacked structure including a carrier transit layer and a carrier supply layer; a p-type nitride semiconductor layer provided over the nitride semiconductor stacked structure and including an active region and an inactive region; an n-type nitride semiconductor layer provided on the inactive region in the p-type nitride semiconductor layer; and a gate electrode provided over the active region in the p-type nitride semiconductor layer. | 08-23-2012 |
20120211761 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device includes: a semiconductor layer disposed above a substrate; an insulating film formed by oxidizing a portion of the semiconductor layer; and an electrode disposed on the insulating film, wherein the insulating film includes gallium oxide, or gallium oxide and indium oxide. | 08-23-2012 |
20130280869 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device includes a substrate, a carrier transit layer disposed above the substrate, a compound semiconductor layer disposed on the carrier transit layer, a source electrode disposed on the compound semiconductor layer, a first groove disposed from the back of the substrate up to the inside of the carrier transit layer while penetrating the substrate, a drain electrode disposed in the inside of the first groove, a gate electrode located between the source electrode and the first groove and disposed on the compound semiconductor layer, and a second groove located diagonally under the source electrode and between the source electrode and the first groove and disposed from the back of the substrate up to the inside of the carrier transit layer while penetrating the substrate. | 10-24-2013 |
20140054606 | SEMICONDUCTOR DEVICE INCLUDING GATE ELECTRODE PROVIDED OVER ACTIVE REGION IN P-TYPE NITRIDE SEMICONDUCTOR LAYER AND METHOD OF MANUFACTURING THE SAME, AND POWER SUPPLY APPARATUS - A semiconductor device includes a nitride semiconductor stacked structure including a carrier transit layer and a carrier supply layer; a p-type nitride semiconductor layer provided over the nitride semiconductor stacked structure and including an active region and an inactive region; an n-type nitride semiconductor layer provided on the inactive region in the p-type nitride semiconductor layer; and a gate electrode provided over the active region in the p-type nitride semiconductor layer. | 02-27-2014 |
20140206158 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device includes: a semiconductor layer disposed above a substrate; an insulating film formed by oxidizing a portion of the semiconductor layer; and an electrode disposed on the insulating film, wherein the insulating film includes gallium oxide, or gallium oxide and indium oxide. | 07-24-2014 |
20140218992 | COMPOUND SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - An AlGaN/GaN-HEMT has a structure including: compound semiconductor layers formed on a substrate; a gate electrode, a gate pad that has a current path formed between the gate electrode and itself, and a semiconductor layer that is spontaneously polarized and piezoelectrically polarized, which are formed on the compound semiconductor layer; and a gate electrode connection layer formed on the semiconductor layer, wherein the gate electrode connection layer and the gate electrode are electrically connected with each other. This structure which is relatively simple allows the AlGaN/GaN-HEMT to realize an intended normally-off operation without causing such inconveniences as increase in a sheet resistance, increase in an on-resistance, and increase in a leakage current. | 08-07-2014 |
Patent application number | Description | Published |
20100307180 | Cold-storage heat exchanger - An outer surface of a cold-storage container (or a refrigerant tube) is provided with a plurality of protrusion portions or recess portions. A cooling air passage, in which air flows to cool a space to be cooled in a cold storage time and in a cold release time of the cold storage material, is provided to contact a surface of the refrigerant tube on a side opposite to the cold storage container bonded to the refrigerant tube. The refrigerant tubes and the cold storage container form therebetween a cold-storage side air passage by the protrusion portions or the recess portions, such that air flows in the cold-storage side air passage separated from the cooling air passage. For example, the cold-storage side air passage is provided with a slanting space that causes condensed water or ice generated in the cold storage time to be drained along the cold-storage side air passage. | 12-09-2010 |
20140083662 | Cold-Storage Heat Exchanger - A cold storage heat exchanger includes multiple refrigerant tubes, a cold storage container that is bonded to the refrigerant tube and defines a compartment receiving a cold storage material, and an inner fin arranged inside of the cold storage container. The cold storage container has a portion that stops and fixes the inner fin, and the cold storage container has a space where air is sealed. The space of the cold storage container is located at an upper side of the member that stops and fixes the inner fin. Accordingly, a stress applied to the cold storage container in the expansion of the cold storage material can be reduced. | 03-27-2014 |
20140083663 | Cold-Storage Heat Exchanger - A cold storage heat exchanger includes multiple refrigerant tubes, a cold storage container, an inner fin, a cooling air passage and an air-side fin. The inner fin is arranged inside of the cold storage container. The cooling air passage, in which air flows to cool a space, is provided to contact a surface of the refrigerant tube on a side opposite to the cold storage container. The air-side fin is arranged in the cooling air passage and thermally connected to the refrigerant tube. The cold storage container includes multiple recess portions bonded to the inner fin, and multiple protrusion portions located on an outer side of the recess portions. The protrusion portions of the cold storage container are bonded to an outer surface of the refrigerant tube. | 03-27-2014 |
20140090826 | Cold-Storage Heat Exchanger - A cold storage heat exchanger includes multiple refrigerant tubes having therein refrigerant passages. The refrigerant tubes are arranged to provide a clearance therebetween. The cold storage heat exchanger further includes a cold storage container that is brazed with the refrigerant tube and defines a compartment receiving a cold storage material. The cold storage container has an open-hole portion at a brazed part with the refrigerant tube. Accordingly, efficiency of heat exchange by the cold storage heat exchanger can be improved. | 04-03-2014 |
20150153090 | COLD-STORAGE HEAT EXCHANGER - A cold storage heat exchanger includes multiple refrigerant tubes arranged to provide a clearance therebetween, multiple cold storage containers each of which is interposed between adjacent refrigerant tubes, bonded to the adjacent refrigerant tubes and defining a compartment receiving a cold storage material. A surface of each cold storage container has multiple protrusion portions, and each protrusion portion protrudes outward and is in contact with the adjacent refrigerant tubes. The multiple protrusion portions are arranged in a zigzag manner or extend continuously in an air flow direction. | 06-04-2015 |
20160068047 | REFRIGERATION CYCLE DEVICE - A refrigeration cycle device includes an interior condenser that exchanges heat between a high-pressure refrigerant and ventilation air to heat the ventilation air, an exterior heat exchanger that exchanges heat between outside air and the refrigerant downstream of the interior condenser, an interior evaporator that exchanges heat between a low-pressure refrigerant downstream of the exterior heat exchanger and the ventilation air before passing through the interior condenser, and an internal heat exchanger that exchanges heat between the refrigerant flowing out of the exterior heat exchanger and the refrigerant flowing out of the interior evaporator. The refrigeration cycle device further includes a gas-liquid separator that separates the refrigerant at a downstream side of the interior condenser into gas and liquid phase refrigerants. In a dehumidification heating mode of evaporating the refrigerant at the exterior heat exchanger, the liquid-phase refrigerant separated by the gas-liquid separator flows into the exterior heat exchanger. | 03-10-2016 |
Patent application number | Description | Published |
20090059755 | Method for adjusting a focus position on an optical disc and an optical disc apparatus applying the same therein - In a method for adjusting a focus position for an optical disc, onto/from which in formation is recorded or reproduced, while adjusting the focus position of an optical reproducing means, upon a recording surface of an optical information recording medium having an area where information of the optical information recording medium is recorded in advance, comprising the following steps of: memorizing plural numbers of information relating to focus positions determined appropriately, which can be obtained from the area where the information of the optical information recording medium is recorded in advance; and adjusting the focus position for the optical disc loaded into an apparatus, from at lease one (1) signal relating to the focus position, which can be obtained from the optical disc, with utilizing a relationship between the plural numbers of information relating to the focus positions determined appropriately, memorized in advance, when reproduction of the information is impossible when the optical disc is loaded into the apparatus, thereby providing the focus position adjusting method and an optical disc apparatus applying the same therein, for enabling an appropriate focus adjustment even in case when DMA area cannot read out due to damages or defects therein. | 03-05-2009 |
20090161506 | Optical Disc Apparatus and Method for Controlling Overwrite Power - An optical disc apparatus capable of improving an overwrite performance for performing an overwrite operation on a re-writable type optical disc. The apparatus includes a calculating section which calculates out a recording power at the time of previously performing recording in a recording area of the optical disc, and a recording power determining section which determines a write power of the recording power calculated out by the calculating section as a write power of the currently recorded recording power, and at the same time, adjusts erase power, cooling power, and/or middle power of the recording power calculated out by the calculating section to finally determine the currently recorded recording power. | 06-25-2009 |
20090303845 | OPTICAL DISC APPARATUS AND REPRODUCTION CONTROL METHOD - The present invention makes it possible to reproduce reproduction images without a break without having to use any additional identification information even when real-time recorded data is not completely continuous. A control circuit references a data identification flag (“Recording Type”) which is attached to each sector of reproduction data to indicate the type of recorded data, and counts the number of sectors to which the data identification flag representing real-time recorded data is attached. When the count is not smaller than a threshold value, the control circuit reproduces all the sectors of the target reproduction block in a real-time reproduction mode. In the real-time reproduction mode, the control circuit masks a portion of reproduction data that is found to be defective, changes the value of the defective data to 0 (zero), and transfers the resulting reproduction data to a host device. | 12-10-2009 |
20100034066 | METHOD FOR ADJUSTING RECORDING POWER AND OPTICAL DISK APPARATUS - A method for adjusting recording power of an optical disk apparatus having an output circuit that outputs recording light onto a test writing area of an optical disk, and a control circuit that adjusts the recording power of the recording light outputted from the output circuit, the method including the steps of causing the control circuit to erase a recording mark recorded onto the test writing area, to record a recording mark onto the test writing area in constant recording power lower than threshold power for starting a recording operation, and to record a recording mark onto the test writing area while changing the recording power. | 02-11-2010 |
20100278024 | OPTICAL DISC DRIVE AND HIBERNATION RECOVERY METHOD FOR AN OPTICAL DISC DRIVE - Provided is a technology in which a controller for controlling read/write performed to/from an optical disc includes a processor for controlling an interface, a temporary memory unit, a rotation control unit, and an optical control unit. The controller causes the processor to shift to a hibernate state when a predetermined condition is satisfied, and causes the processor to recover from the hibernate state into an active state when the interface receives a first command. The processor receives the first command from the interface, instructs the rotation control unit to drive the optical disc at a predetermined target rotational speed, instructs the optical control unit to perform a processing specified by the first command, transmits a completion notification of the first command to the interface with a delay, receives a second command after transmitting the completion notification of the first command, and executes the processing of the second command. | 11-04-2010 |
Patent application number | Description | Published |
20090212356 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a double-diffused metal oxide semiconductor (DMOS) transistor having a gate electrode and a drain electrode region; and a protection element protecting the gate electrode with respect to overvoltage and coupled to the DMOS transistor on a structure of one semiconductor substrate. The DMOS transistor and the protection element are included in an element integrated structure. In the device, the protection element is formed on a diffusion region, which is separately formed with respect to a diffusion region for the DMOS transistor, in the drain electrode region of the DMOS transistor. | 08-27-2009 |
20140247001 | CIRCUIT DEVICE AND ELECTRONIC APPARATUS - An electronic circuit includes a noise source and an analog circuit and a logic circuit that may be adversely affected by noise. At least a portion of the analog circuit and the logic circuit is formed on a buried impurity layer whose conductivity is different from that of a substrate, and at least a portion of the periphery of that portion is surrounded by an impurity layer that is different from the substrate. Thus, propagation of the noise from the noise source is prevented. | 09-04-2014 |
20140286061 | CIRCUIT DEVICE AND ELECTRONIC APPARATUS - An electronic circuit includes a failure detection circuit that detects an abnormality of the gate potential of a transistor of a bridge circuit. The failure detection circuit monitors an output voltage of a drive circuit that is to be the gate potential of the transistor of the bridge circuit and, when detecting an abnormality, stops the drive circuit. | 09-25-2014 |
20150234001 | CIRCUIT DEVICE AND ELECTRONIC APPARATUS - A circuit device includes an output circuit having a high-side transistor and a low-side transistor, and a control circuit configured to detect a voltage between the drain node and the source node of a detection target transistor that is at least one of the low-side transistor and the high-side transistor, and detect a malfunction in the case where it is determined that the detection voltage did not exceed a given comparison voltage. | 08-20-2015 |
20150236592 | CIRCUIT DEVICE AND ELECTRONIC APPARATUS - Provided is a circuit device in which reduction of power consumption, reduction of the number of parts, and the like can be realized by eliminating the need for a sense resistor. The circuit device includes a bridge circuit, and a control circuit configured to compare a reference voltage VR and a detection voltage V | 08-20-2015 |
20160099560 | CIRCUIT APPARATUS AND ELECTRONIC APPLIANCE - With an IC including a driver that drives a large current, its characteristics may be deteriorated or the IC may be broken by heat generated by the large current. By providing a plurality of sensors and disposing some of the sensors so as to be close to an output driver that flows a large current, which is a source of heat generation, an increase in the temperature of the IC can be rapidly detected, and the deterioration of the characteristics of the IC can be prevented by accurately actuating an overheating protection function based on a result of detection. Alternatively, breakage of the IC can be prevented by suppressing overheating. | 04-07-2016 |
Patent application number | Description | Published |
20120307534 | COMPOUND SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - An AlGaN/GaN-HEMT has a structure including: compound semiconductor layers formed on a substrate; a gate electrode, a gate pad that has a current path formed between the gate electrode and itself, and a semiconductor layer that is spontaneously polarized and piezoelectrically polarized, which are formed on the compound semiconductor layer; and a gate electrode connection layer formed on the semiconductor layer, wherein the gate electrode connection layer and the gate electrode are electrically connected with each other. This structure which is relatively simple allows the AlGaN/GaN-HEMT to realize an intended normally-off operation without causing such inconveniences as increase in a sheet resistance, increase in an on-resistance, and increase in a leakage current. | 12-06-2012 |
20130069113 | COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - An embodiment of a compound semiconductor device includes: a Si substrate; a Si oxide layer formed over a surface of the Si substrate; a nucleation layer formed over the Si oxide layer, the nucleation layer exposing a part of the Si oxide layer; and a compound semiconductor stacked structure formed over the Si oxide layer and the nucleation layer. | 03-21-2013 |
20130075785 | SEMICONDUCTOR DEVICE AND FABRICATION METHOD - A semiconductor device includes a first semiconductor layer formed on a substrate, the first semiconductor containing an impurity element; a second semiconductor layer formed on the first semiconductor layer; a third semiconductor layer formed on the second semiconductor layer; and a gate electrode, a source electrode and a drain electrode that are formed on the third semiconductor layer. In the semiconductor device, the second semiconductor layer includes an impurity diffusion region in which an impurity element contained in the first semiconductor layer is diffused, the impurity diffusion region being located directly beneath the gate electrode and being in contact with the first semiconductor layer, and the impurity element causes the impurity diffusion region to be a p-type impurity diffusion region. | 03-28-2013 |
20130076442 | COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - An embodiment of a compound semiconductor device includes: a substrate; a compound semiconductor stacked structure formed over the substrate; and an amorphous insulating film formed between the substrate and the compound semiconductor stacked structure. | 03-28-2013 |
20130076443 | COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - An embodiment of a compound semiconductor device includes: a substrate; an electron channel layer and an electron supply layer formed over the substrate; a gate electrode, a source electrode and a drain electrode formed on or above the electron supply layer; and a p-type semiconductor layer formed between the electron supply layer and the gate electrode. The p-type semiconductor layer contains, as a p-type impurity, an element same as that being contained in at least either of the electron channel layer and the electron supply layer. | 03-28-2013 |
20130077352 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME, AND POWER SUPPLY APPARATUS - A semiconductor device includes a substrate; a first nitride semiconductor layer provided over the substrate and having a nitride-polar surface; a gate electrode provided over the first nitride semiconductor layer; and a semiconductor layer provided on the first nitride semiconductor layer and only under the gate electrode, and exhibiting a polarization. | 03-28-2013 |
20130082360 | COMPOUND SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A compound semiconductor multilayer structure is formed on a Si substrate. The compound semiconductor multilayer structure includes an electrode transit layer, an electrode donor layer formed above the electron transit layer, and a cap layer formed above the electron donor layer. The cap layer contains a first crystal polarized in the same direction as the electron transit layer and the electron donor layer and a second crystal polarized in the direction opposite to the polarization direction of the electron transit layer and the electron donor layer. | 04-04-2013 |
20130240949 | COMPOUND SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - An AlGaN/GaN HEMT includes a compound semiconductor laminated structure, a gate electrode formed above the compound semiconductor laminated structure, and a p-type semiconductor layer formed between the compound semiconductor laminated structure and the gate electrode, and the p-type semiconductor layer has tensile strain in a direction parallel to a surface of the compound semiconductor laminated structure. | 09-19-2013 |
20130242618 | COMPOUND SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - The AlGaN/GaN HEMT includes, on an SiC substrate, a laminated compound semiconductor structure and a gate electrode formed on the laminated compound semiconductor structure, wherein a p-type impurity (Mg) and oxygen (O) localize in a lower region of the laminated compound semiconductor structure aligned with the gate electrode, to such a depth as to cause part of a two-dimensional electron gas generated in the laminated compound semiconductor structure to disappear. | 09-19-2013 |
20130248872 | SEMICONDUCTOR DEVICE, NITRIDE SEMICONDUCTOR CRYSTAL, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR CRYSTAL - A semiconductor device includes: a nucleation layer formed over a substrate; a buffer layer formed over the nucleation layer; a first nitride semiconductor layer formed over the buffer layer; and a second nitride semiconductor layer formed over the first nitride semiconductor layer, wherein the ratio of yellow luminescence emission to band edge emission in photoluminescence is 400% or less and the twist value in an X-ray rocking curve is 1,000 arcsec or less. | 09-26-2013 |
20130256682 | COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - An embodiment of a method of manufacturing a compound semiconductor device includes: forming an initial layer over a substrate; forming a buffer layer over the initial layer; forming an electron transport layer and an electron supply layer over the buffer layer; and forming a gate electrode, a source electrode and a gate electrode over the electron supply layer. The forming an initial layer includes: forming a first compound semiconductor film with a flow rate ratio being a first value, the flow rate ratio being a ratio of a flow rate of a V-group element source gas to a flow rate of a III-group element source gas; and forming a second compound semiconductor film with the flow rate ratio being a second value different from the first value over the first compound semiconductor film. The method further includes forming an Fe-doped region between the buffer layer and the electron transport layer. | 10-03-2013 |
20140091313 | SEMICONDUCTOR APPARATUS - A semiconductor apparatus includes a substrate; a buffer layer formed on the substrate; a first semiconductor layer formed on the buffer layer; and a second semiconductor layer formed on the first semiconductor layer. Further, the buffer layer is formed of AlGaN and doped with Fe, the buffer layer includes a plurality of layers having different Al component ratios from each other, and the Al component ratio of a first layer is greater than the Al component ratio of a second layer and a Fe concentration of the first layer is less than the Fe concentration of the second layer, the first and second layers being included in the plurality of layers, and the first layer being formed on a substrate side of the second layer. | 04-03-2014 |
20140091314 | SEMICONDUCTOR APPARATUS - A semiconductor apparatus includes a buffer layer formed on a substrate; an SLS (Strained Layer Supperlattice) buffer layer formed on the buffer layer; an electron transit layer formed on the SLS buffer layer and formed of a semiconductor material; and an electron supply layer formed on the electron transit layer and formed of a semiconductor material. Further, the buffer layer is formed of AlGaN and includes two or more layers with different Al composition ratios, the SLS buffer layer is formed by alternately laminating a first lattice layer including AlN and a second lattice layer including GaN, and the Al composition ratio in one of the layers of the buffer layer being in contact with the SLS buffer layer is greater than or equal to an Al effective composition ratio in the SLS buffer layer. | 04-03-2014 |
20140091315 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A semiconductor device includes an electron transit layer formed on a substrate; an electron supply layer formed on the electron transit layer; a doping layer formed on the electron supply layer, the doping layer being formed with a nitride semiconductor in which an impurity element to become p-type and C are doped; a p-type layer formed on the doping layer, the p-type layer being formed with a nitride semiconductor in which the impurity element to become p-type is doped; a gate electrode formed on the p-type layer; and a source electrode and a drain electrode formed on the doping layer or the electron supply layer. The p-type layer is formed in an area immediately below the gate electrode, and a density of the C doped in the doping layer is greater than or equal to 1×10 | 04-03-2014 |
20140091318 | SEMICONDUCTOR APPARATUS - A semiconductor apparatus includes: a substrate; a buffer layer formed on the substrate; a strained layer superlattice buffer layer formed on the buffer layer; an electron transit layer formed of a semiconductor material on the strained layer superlattice buffer layer; and an electron supply layer formed of a semiconductor material on the electron transit layer; the strained layer superlattice buffer layer being an alternate stack of first lattice layers including AlN and second lattice layers including GaN; the strained layer superlattice buffer layer being doped with one, or two or more impurities selected from Fe, Mg and C. | 04-03-2014 |
20140091319 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device includes laminating and forming an electron transit layer, an electron supplying layer, an etching stop layer, and a p-type film on a substrate sequentially, the p-type film being formed of a nitride semiconductor material that includes Al doped with an impurity element that attains p-type, the etching stop layer being formed of a material that includes GaN, removing the p-type film in an area except an area where a gate electrode is to be formed, by dry etching to form a p-type layer in the area where the gate electrode is to be formed, the dry etching being conducted while plasma emission in the dry etching is observed, the dry etching being stopped after the dry etching is started and plasma emission originating from Al is not observed, and forming the gate electrode on the p-type layer. | 04-03-2014 |
20140091320 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE - A semiconductor device includes a first semiconductor layer formed on a substrate, a second semiconductor layer formed on the first semiconductor layer, a third semiconductor layer and a fourth semiconductor layer formed on the second semiconductor layer, a gate electrode formed on the third semiconductor layer, and a source electrode and a drain electrode contacting and formed on the fourth semiconductor layer, wherein the third semiconductor layer is formed of a semiconductor material for attaining p-type on an area just under the gate electrode, and a concentration of silicon in the fourth semiconductor layer is higher than that in the second semiconductor layer. | 04-03-2014 |
20140091364 | COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - An AlGaN/GaN HEMT includes: an electron transit layer; an electron supply layer formed above the electron transit layer; and a gate electrode formed above the electron supply layer, wherein a p-type semiconductor region is formed only at a site of the electron transit layer which is contained in a region below the gate electrode. | 04-03-2014 |
20140175453 | SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME, POWER SUPPLY, AND HIGH-FREQUENCY AMPLIFIER - A semiconductor device includes: a first transistor that includes a first gate electrode, a first source electrode, a first drain electrode, and a first nitride semiconductor laminate that includes a first electron transit layer and a first electron supply layer; a second transistor that includes a second gate electrode, a second source electrode, a second drain electrode, and a second nitride semiconductor laminate that includes a second electrode transit layer and a second electron supply layer, the second drain electrode being a common electrode that also serves as the first source electrode, the second electron transit layer having part that underlies the second gate electrode and that contains a p-type dopant; and a p-type-dopant-diffusion-blocking layer. | 06-26-2014 |
20150076449 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device includes a superlattice buffer layer formed on a substrate. An upper buffer layer is formed on the superlattice buffer layer. A first semiconductor layer is formed by a nitride semiconductor on the upper busier layer. A second semiconductor layer is formed by a nitride semiconductor on the first semiconductor layer. A gate electrode, a source electrode and a drain electrode are formed on the second semiconductor layer. The superlattice buffer layer is formed by cyclically laminating nitride semiconductor films having different composition. The upper buffer layer is formed by a nitride semiconductor material having a band gap wider than a band gap of the first semiconductor layer and doped with an impurity element that causes a depth of an acceptor level to be greater than or equal to 0.5 eV. | 03-19-2015 |
20150137184 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device includes laminating and forming an electron transit layer, an electron supplying layer, an etching stop layer, and a p-type film on a substrate sequentially, the p-type film being formed of a nitride semiconductor material that includes Al doped with an impurity element that attains p-type, the etching stop layer being formed of a material that includes GaN, removing the p-type film in an area except an area where a gate electrode is to be formed, by dry etching to form a p-type layer in the area where the gate electrode is to be formed, the dry etching being conducted while plasma emission in the dry etching is observed, the dry etching being stopped after the dry etching is started and plasma emission originating from Al is not observed, and forming the gate electrode on the p-type layer. | 05-21-2015 |
20150206935 | COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - An embodiment of a compound semiconductor device includes: a substrate; a compound semiconductor stacked structure formed over the substrate; and an amorphous insulating film formed between the substrate and the compound semiconductor stacked structure. | 07-23-2015 |