Patent application number | Description | Published |
20090141408 | MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC HEAD, MAGNETIC REPRODUCING APPARATUS, AND MAGNETIC MEMORY - A magnetoresistance effect element comprises a magnetoresistance effect film and a pair of electrode. The magnetoresistance effect film having a first magnetic layer whose direction of magnetization is substantially pinned in one direction; a second magnetic layer whose direction of magnetization changes in response to an external magnetic field; a nonmagnetic intermediate layer located between the first and second magnetic layers; and a film provided in the first magnetic layer, in the second magnetic layer, at a interface between the first magnetic layer and the nonmagnetic intermediate layer, and/or at a interface between the second magnetic layer and the nonmagnetic intermediate layer, the film having a thickness not larger than 3 nanometers, and the film has as least one selected from the group consisting of nitride, oxinitride, phosphide, and fluoride. The pair of electrodes are electrically connected to the magnetoresistance effect film to supply a sense current perpendicularly to a film plane of said magnetoresistance effect film. | 06-04-2009 |
20090162698 | Magnetoresistive Effect Element and Manufacturing Method Thereof - A magnetoresistive effect element is produced by forming a first magnetic layer, a spacer layer including an insulating layer and a conductive layer which penetrates through the insulating layer and passes a current, on the first magnetic layer, and a second magnetic layer all of which or part of which is treated with ion, plasma or heat, on the formed spacer layer. | 06-25-2009 |
20100091412 | Method for manufacturing a magneto-resistance effect element and magnetic recording and reproducing apparatus - A method for manufacturing a magneto-resistance effect element is provided. The magneto-resistance effect element includes a first magnetic layer including a ferromagnetic material, a second magnetic layer including a ferromagnetic material and a spacer layer provided between the first magnetic layer and the second magnetic layer, the spacer layer having an insulating layer and a conductive portion penetrating through the insulating layer. The method includes: forming a film to be a base material of the spacer layer; performing a first treatment using a gas including at least one of oxygen molecules, oxygen atoms, oxygen ions, oxygen plasma and oxygen radicals on the film; and performing a second treatment using a gas including at least one of helium ions, helium plasma, helium radicals, neon ions, neon plasma and neon radicals on the film submitted to the first treatment. | 04-15-2010 |
20100091414 | Method for manufacturing a magneto-resistance effect element and magnetic recording and reproducing apparatus - A method for manufacturing a magneto-resistance effect element is provided. The magneto-resistance effect element includes a first magnetic layer including a ferromagnetic material, a second magnetic layer including a ferromagnetic material and a spacer layer provided between the first magnetic layer and the second magnetic layer, the spacer layer having an insulating layer and a conductive portion penetrating through the insulating layer. The method includes: forming a film to be a base material of the spacer layer; performing a first treatment using a gas including at least one of oxygen molecules, oxygen atoms, oxygen ions, oxygen plasma and oxygen radicals on the film; and performing a second treatment using a gas including at least one of krypton ions, krypton plasma, krypton radicals, xenon ions, xenon plasma and xenon radicals on the film submitted to the first treatment. | 04-15-2010 |
20100091415 | Method for manufacturing a magneto-resistance effect element and magnetic recording and reproducing apparatus - A method for manufacturing a magneto-resistance effect element is provided. The magneto-resistance effect element includes a first magnetic layer including a ferromagnetic material, a second magnetic layer including a ferromagnetic material and a spacer layer provided between the first magnetic layer and the second magnetic layer, the spacer layer having an insulating layer and a conductive portion penetrating through the insulating layer. The method includes: forming a film to be a base material of the spacer layer; performing a first treatment using a gas including at least one of oxygen molecules, oxygen atoms, oxygen ions, oxygen plasma and oxygen radicals on the film; and performing a second treatment using a gas including at least one of nitrogen ions, nitrogen atoms, nitrogen plasma, and nitrogen radicals on the film submitted to the first treatment. | 04-15-2010 |
20100092803 | Method for manufacturing a magneto-resistance effect element and magnetic recording and reproducing apparatus - A method for manufacturing a magneto-resistance effect element is provided. The magneto-resistance effect element includes a first magnetic layer including a ferromagnetic material, a second magnetic layer including a ferromagnetic material and a spacer layer provided between the first magnetic layer and the second magnetic layer, the spacer layer having an insulating layer and a conductive portion penetrating through the insulating layer. The method includes: forming a film to be a base material of the spacer layer; performing a first treatment using a gas including at least one of oxygen molecules, oxygen atoms, oxygen ions, oxygen plasma and oxygen radicals on the film; and performing a second treatment using a gas including at least one of hydrogen molecules, hydrogen atoms, hydrogen ions, hydrogen plasma, hydrogen radicals, deuterium molecules, deuterium atoms, deuterium ions, deuterium plasma and deuterium radicals on the film submitted to the first treatment. | 04-15-2010 |
20110205669 | METHOD FOR MANUFACTURING MAGNETO-RESISTANCE EFFECT ELEMENT, MAGNETIC HEAD ASSEMBLY, AND MAGNETIC RECORDING AND REPRODUCING APPARATUS - According to one embodiment, a method for manufacturing a magneto-resistance effect element is disclosed. The element has first and second magnetic layers, and an intermediate layer provided between the first and second magnetic layers. The intermediate layer has an insulating layer and a conductive portion penetrating through the insulating layer. The method can include forming a structure body having the insulating layer and the conductive portion, performing a first treatment including irradiating the structure body with at least one of ion including at least one selected from the group consisting of argon, xenon, helium, neon and krypton and a plasma including at least one selected from the group, and performing a second treatment including at least one of exposure to gas containing oxygen or nitrogen, irradiation of ion beam containing oxygen or nitrogen, irradiation of plasma containing oxygen or nitrogen, to the structure body submitted to the first treatment. | 08-25-2011 |
20110228427 | MAGNETORESISTIVE ELEMENT, MAGNETIC HEAD ASSEMBLY, AND MAGNETIC RECORDING/REPRODUCING APPARATUS - A magnetoresistive element includes a first ferromagnetic layer, a second ferromagnetic layer, a nonmagnetic layer, a first metal layer, a second metal layer, a first electrode, and a second electrode. The nonmagnetic layer is provided between the first ferromagnetic layer and the second ferromagnetic layer. The first metal layer includes Au and is provided so that the first ferromagnetic layer is sandwiched between the nonmagnetic layer and the first metal layer. The second metal layer includes a CuNi alloy, and is provided so that the first metal layer is sandwiched between the first ferromagnetic layer and the second metal layer. In addition, magnetization of either one of the first ferromagnetic layer and the second ferromagnetic layer is fixed in a direction. Magnetization of the other is variable in response to an external field. At least one of the first ferromagnetic layer and the second ferromagnetic layer includes a half metal. | 09-22-2011 |
20110295128 | BLOOD-PRESSURE SENSOR - A blood-pressure sensor includes a substrate, a first electrode, a magnetization fixed layer, a nonmagnetic layer, a magnetization free layer, and a second electrode. The substrate is bent to generate a tensile stress at least in a first direction. The first electrode is provided on the substrate. The magnetization fixed layer has magnetization to be fixed in a second direction, and is provided on the substrate. The nonmagnetic layer is provided on the magnetization fixed layer. The magnetization free layer has a magnetization direction which is different from the first direction and from a direction perpendicular to the first direction. The second electrode is provided on the magnetization free layer. | 12-01-2011 |
20120079887 | STRAIN SENSOR ELEMENT AND BLOOD PRESSURE SENSOR - A strain sensor element comprises a laminated film which has a magnetic free layer, a spacer layer, and a magnetic reference layer. The free layer has a variable magnetization direction and a out-of-plane magnetization direction. The reference layer has a variable magnetization direction which is pinned more strongly than the magnetization of the free layer. The spacer layer provided between the free layer and the reference layer. A pair of electrodes is provided with a plane of the laminated film. A substrate is provided with either of the pair electrodes and can be strained. The rotation angle of the magnetization of the free layer is different from the rotation angle of the magnetization of the reference layer when the substrate is distorted. Electrical resistance is changed depending on the magnetization angle between the free layer and the reference layer, which allows the element to operate as a strain sensor. | 04-05-2012 |
20120206837 | MAGNETORESISTIVE ELEMENT, MAGNETIC HEAD ASSEMBLY, AND MAGNETIC RECORDING/REPRODUCING APPARATUS - A magnetoresistive element includes a lamination body and a pair of electrodes. The lamination body includes a first magnetic layer, a second magnetic layer, and a spacer layer. The spacer layer is provided between the first magnetic layer and the second magnetic layer and includes an oxide layer. The oxide layer includes at least one element selected from the group consisting of Zn, In, Sn, and Cd, and at least one element selected from the group consisting of Fe, Co, and Ni. | 08-16-2012 |
20120212857 | MAGNETO-RESISTIVE EFFECT DEVICE, MAGNETIC HEAD ASSEMBLY, AND MAGNETIC RECORDING DEVICE - According to one embodiment, a magneto-resistive effect device includes a stacked body, a pair of electrodes for supplying current in a stacking direction of the stacked body. The stacked body includes a first magnetic layer, a second magnetic layer, and a spacer layer disposed between the first magnetic layer and the second magnetic layer. At least one of the first magnetic layer, the second magnetic layer, and the spacer layer includes an oxide layer formed from a metal oxide. A crystalline structure of the metal oxide is a NaCl structure. | 08-23-2012 |
20120245477 | MAGNETO-RESISTIVE EFFECT DEVICE, MAGNETIC HEAD GIMBAL ASSEMBLY, MAGNETIC RECORDING/REPRODUCTION DEVICE, STRAIN SENSOR, PRESSURE SENSOR, BLOOD PRESSURE SENSOR, AND STRUCTURAL HEALTH MONITORING SENSOR - According to one embodiment, a magneto-resistive effect device, includes a stacked body stacked on a substrate, a pair of first electrodes that feeds current to the stacked body, a strain introduction member, and a second electrode for applying a voltage to the strain introduction member. The stacked body includes a first magnetic layer that includes one or more metals selected from the group consisting of iron, cobalt, and nickel, a second magnetic layer stacked on the first magnetic layer, having a composition that is different from the first magnetic layer, and a spacer layer disposed between the first magnetic layer and the second magnetic layer. | 09-27-2012 |
20120250406 | MAGNETIC MEMORY DEVICE AND METHOD OF MAGNETIC DOMAIN WALL MOTION - A magnetic memory device comprises a first electrode, a second electrode, a laminated structure comprising plural first magnetic layers being provided between the first electrode and the second electrode, a second magnetic layer comprising different composition elements from that of the first magnetic layer and being provided between plural first magnetic layers, a piezoelectric body provided on a opposite side to a side where the first electrode is provided in the laminated structure, and a third electrode applying voltage to the piezoelectric body and provided on a different position from a position where the first electrode is provided in the piezoelectric body. | 10-04-2012 |
20130076687 | TOUCH PANEL AND DISPLAY DEVICE - According to one embodiment, a touch panel includes first interconnections, second interconnections, sensor units and a control unit. The first interconnections are arranged along a first direction, and extend along a second direction intersecting with the first direction. The second interconnections are arranged along a third direction intersecting with the first direction, and extend along a fourth direction intersecting with the third direction. The sensor units are provided in intersection portions of the first and second interconnections, include first and second ferromagnetic layers, and an intermediate layer, allow a current to be passed, and have one end connected to the first interconnections and another end connected to the second interconnections. The control unit is connected to the first and second interconnections. An electric resistance of the sensor units changes in accordance with a stress applied. The control unit senses a change in the electric resistance. | 03-28-2013 |
20130079648 | PULSE WAVE VELOCITY MEASURING DEVICE AND PULSE WAVE VELOCITY MEASUREMENT METHOD - According to one embodiment, a pulse wave velocity measuring device includes a first sensor, a second sensor, a base body and a calculation unit. The first sensor is configured to sense a pulse wave propagating through an interior of a vessel. The second sensor is separated from the first sensor and is configured to sense the pulse wave. The base body is configured to hold the first sensor and the second sensor and regulate a distance between the first sensor and the second sensor. The calculation unit is configured to derive a difference between a time of the sensing of the pulse wave by the first sensor and a time of the sensing of the pulse wave by the second sensor. | 03-28-2013 |
20130170669 | STRAIN AND PRESSURE SENSING DEVICE, MICROPHONE, METHOD FOR MANUFACTURING STRAIN AND PRESSURE SENSING DEVICE, AND METHOD FOR MANUFACTURING MICROPHONE - According to one embodiment, a strain and pressure sensing device includes a semiconductor circuit unit and a sensing unit. The semiconductor circuit unit includes a semiconductor substrate and a transistor. The transistor is provided on a semiconductor substrate. The sensing unit is provided on the semiconductor circuit unit, and has space and non-space portions. The non-space portion is juxtaposed with the space portion. The sensing unit further includes a movable beam, a strain sensing element unit, and first and second buried interconnects. The movable beam has fixed and movable portions, and includes first and second interconnect layers. The fixed portion is fixed to the non-space portion. The movable portion is separated from the transistor and extends from the fixed portion into the space portion. The strain sensing element unit is fixed to the movable portion. The first and second buried interconnects are provided in the non-space portion. | 07-04-2013 |
20130242435 | MAGNETO-RESISTANCE EFFECT ELEMENT, MAGNETIC HEAD ASSEMBLY, MAGNETIC RECORDING AND REPRODUCING APPARATUS, AND MAGNETIC MEMORY - According to one embodiment, a magneto-resistance effect element includes: a first electrode; a second electrode; a first magnetic layer provided between the first and the second electrodes; a second magnetic layer provided between the first magnetic layer and the second electrode; and an oxide layer of a metal oxide provided between the first magnetic layer and the second magnetic layer. The oxide layer includes wustite crystal grains of a wustite structure with a (1 1 1) plane orientation containing iron. A lattice spacing of a (1 1 1) plane of the wustite crystal grains is not less than 0.253 nanometers and not more than 0.275 nanometers. | 09-19-2013 |
20130250668 | MAGNETIC MEMORY ELEMENT, MAGNETIC MEMORY, AND MAGNETIC MEMORY DEVICE - According to one embodiment, a magnetic memory element includes: a magnetic wire, a stress application unit, and a recording/reproducing unit. The magnetic wire includes a plurality of domain walls and a plurality of magnetic domains separated by the domain walls. The magnetic wire is a closed loop. The stress application unit is configured to cause the domain walls to circle around along the closed loop a plurality of times by applying stress to the magnetic wire. The recording/reproducing unit is configured to write memory information by changing magnetizations of the circling magnetic domains as the domain walls circle around and to read the written memory information by detecting the magnetizations of the circling magnetic domains. | 09-26-2013 |
20130255069 | METHOD FOR MANUFACTURING PRESSURE SENSING DEVICE - According to one embodiment, a method for manufacturing a pressure sensing device includes preparing a sensor unit and a mounting substrate. The sensor unit includes: a membrane body; and an element unit provided on the membrane body. The element unit includes: a first electrode; a second electrode; and a first magnetic layer provided between the first electrode and the second electrode and having magnetization in a first direction. The mounting substrate includes: a base; a first electrode pad provided on the base; and a second electrode pad provided on the base and provided apart from the first electrode pad. The method further includes joining the first electrode pad to the first electrode while heated, and joining the second electrode pad to the second electrode while heated, with an external magnetic field along the first direction applied to the sensor unit. | 10-03-2013 |
20130255393 | PRESSURE SENSOR AND MICROPHONE - According to one embodiment, a pressure sensor includes a base, and a first sensor unit. The first sensor unit includes a first transducer thin film, a first strain sensing device and a second strain sensing device. The first strain sensing device includes a first magnetic layer, a second magnetic layer, and a first intermediate layer provided between the first and the second magnetic layers. The second strain sensing device is provided apart from the first strain sensing device on the first membrane surface and provided at a location different from a location of the barycenter, the second strain sensing device including a third magnetic layer, a fourth magnetic layer, and a second intermediate layer provided between the third and the fourth magnetic layers, the first and the second intermediate layers being nonmagnetic. The first and the second strain sensing devices, and the barycenter are in a straight line. | 10-03-2013 |
20140069200 | PRESSURE SENSOR DEVICE - A pressure sensor device comprises a support substrate including a thin film area which is bendable by a pressure, a sensor film comprising a first electrode provided on the thin film area, a second electrode provided on the first electrode, a reference layer provided between the first electrode and the second electrode, a free layer provided between the reference layer and the first electrode or between the reference layer and the second electrode, a spacer layer provided between the reference layer and the free layer, a shield provided on a side of the support substrate. | 03-13-2014 |
20140090486 | PRESSURE SENSOR, AUDIO MICROPHONE, BLOOD PRESSURE SENSOR, AND TOUCH PANEL - According to one embodiment, a pressure sensor includes a substrate, a first electrode, a second electrode, a first magnetic layer, a second magnetic, a spacer layer, a third magnetic layer. The substrate includes a first region and a second region. The first electrode is provided on the first region. The second electrode is provided on the first electrode. The first magnetic layer is provided between the first electrode and the second electrode. The second magnetic layer is provided between the first electrode and the first magnetic layer or between the first magnetic layer and the second electrode. The spacer layer is provided between the first magnetic layer and the second magnetic layer in a stacking direction of layers from the first electrode to the second electrode. The third magnetic layer is provided continuously with the second magnetic layer on the second region. | 04-03-2014 |
20140137658 | MICROPHONE PACKAGE - According to one embodiment, a microphone package includes: a pressure sensing element including a film and a device; and a cover. The film generates strain in response to pressure. The device includes: a first electrode; a second electrode; and a first magnetic layer. The first magnetic layer is provided between the first electrode and the second electrode and has a first magnetization. The cover includes: an upper portion; and a side portion. The side portion is magnetic and provided depending on the first magnetization and the second magnetization. | 05-22-2014 |
20140137668 | PRESSURE SENSOR, MICROPHONE, BLOOD PRESSURE SENSOR, AND TOUCH PANEL - According to one embodiment, a pressure sensor includes a base unit, a film unit, and a plurality of sensing elements. The plurality of sensing elements is provided on the film unit radially with respect to a centroid of the film unit. The plurality of sensing elements has a first side and a second side intersecting the first side. Each of the plurality of sensing elements includes a first magnetic layer, a second magnetic layer, and an intermediate layer. Each of the plurality of sensing elements has a shape anisotropy characterized by a length of the first side being longer than a length of the second side intersecting the first side. The plurality of sensing elements is provided at lines having radial configurations extending from the centroid to have a prescribed angle between the first side and the line. | 05-22-2014 |
20140207006 | STRAIN SENSOR ELEMENT AND BLOOD PRESSURE SENSOR - A strain sensor element comprises a laminated film which has a magnetic free layer, a spacer layer, and a magnetic reference layer. The free layer has a variable magnetization direction and a out-of-plane magnetization direction. The reference layer has a variable magnetization direction which is pinned more strongly than the magnetization of the free layer. The spacer layer provided between the free layer and the reference layer. A pair of electrodes is provided with a plane of the laminated film. A substrate is provided with either of the pair electrodes and can be strained. The rotation angle of the magnetization of the free layer is different from the rotation angle of the magnetization of the reference layer when the substrate is distorted. Electrical resistance is changed depending on the magnetization angle between the free layer and the reference layer, which allows the element to operate as a strain sensor. | 07-24-2014 |
20140207007 | STRAIN SENSOR ELEMENT AND BLOOD PRESSURE SENSOR - A strain sensor element comprises a laminated film which has a magnetic free layer, a spacer layer, and a magnetic reference layer. The free layer has a variable magnetization direction and a out-of-plane magnetization direction. The reference layer has a variable magnetization direction which is pinned more strongly than the magnetization of the free layer. The spacer layer provided between the free layer and the reference layer. A pair of electrodes is provided with a plane of the laminated film. A substrate is provided with either of the pair electrodes and can be strained. The rotation angle of the magnetization of the free layer is different from the rotation angle of the magnetization of the reference layer when the substrate is distorted. Electrical resistance is changed depending on the magnetization angle between the free layer and the reference layer, which allows the element to operate as a strain sensor. | 07-24-2014 |
20140236028 | BLOOD-PRESSURE SENSOR - A blood-pressure sensor includes a substrate, a first electrode, a magnetization fixed layer, a nonmagnetic layer, a magnetization free layer, and a second electrode. The substrate is bent to generate a tensile stress at least in a first direction. The first electrode is provided on the substrate. The magnetization fixed layer has magnetization to be fixed in a second direction, and is provided on the substrate. The nonmagnetic layer is provided on the magnetization fixed layer. The magnetization free layer has a magnetization direction which is different from the first direction and from a direction perpendicular to the first direction. The second electrode is provided on the magnetization free layer. | 08-21-2014 |
20140369530 | PRESSURE SENSOR, ACOUSTIC MICROPHONE, BLOOD PRESSURE SENSOR, AND TOUCH PANEL - According to one embodiment, a pressure sensor includes a film part, and a sensing unit. A circumscribing rectangle circumscribing a configuration of a film surface of the film part has a first side, a second side, a third side connected to one end of the first side and one end of the second side, a fourth side connected to one other end of the first side and one other end of the second side, and a centroid of the circumscribing rectangle. The circumscribing rectangle includes a first region enclosed by the first side, line segments connecting the centroid to the one end of the first side, and to the one other end of the first side. The sensing unit includes sensing elements provided on a portion of the film surface overlapping the first region. Each sensing element includes a first, second magnetic layers, and a spacer layer. | 12-18-2014 |
20150047437 | PRESSURE SENSOR AND MICROPHONE - According to one embodiment, a pressure sensor includes a base, and a first sensor unit. The first sensor unit includes a first transducer thin film, a first strain sensing device and a second strain sensing device. The first strain sensing device includes a first magnetic layer, a second magnetic layer, and a first intermediate layer provided between the first and the second magnetic layers. The second strain sensing device is provided apart from the first strain sensing device on the first membrane surface and provided at a location different from a location of the barycenter, the second strain sensing device including a third magnetic layer, a fourth magnetic layer, and a second intermediate layer provided between the third and the fourth magnetic layers, the first and the second intermediate layers being nonmagnetic. The first and the second strain sensing devices, and the barycenter are in a straight line. | 02-19-2015 |
20150055404 | MAGNETIC MEMORY DEVICE AND METHOD OF MAGNETIC DOMAIN WALL MOTION - A magnetic memory device comprises a first electrode, a second electrode, a laminated structure comprising plural first magnetic layers being provided between the first electrode and the second electrode, a second magnetic layer comprising different composition elements from that of the first magnetic layer and being provided between plural first magnetic layers, a piezoelectric body provided on a opposite side to a side where the first electrode is provided in the laminated structure, and a third electrode applying voltage to the piezoelectric body and provided on a different position from a position where the first electrode is provided in the piezoelectric body. | 02-26-2015 |
20150069540 | STRAIN SENSOR AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a strain sensor includes a substrate, a lid, a frame, and a sensing unit. The substrate has a first surface. The lid is provided on the first surface. The frame is provided between the substrate and the lid. The frame is nonconductive and includes a magnetic body. The sensing unit is provided inside the frame between the substrate and the lid, and includes a magnetoresistance effect element. | 03-12-2015 |