Patent application number | Description | Published |
20110043471 | TOUCH SENSOR METHODS AND APPARATUS - Touch sensor methods and apparatus are provided. A first photodiode includes an i-region of a first length. A second photodiode includes an i-region with a second length. A sensing component including a capacitive element is operably coupled to the first photodiode and the second photodiode. The first length of the i-region of the first photodiode is different than the second length of the i-region of the second photodiode. | 02-24-2011 |
20110204246 | RADIATION IMAGE PICKUP APPARATUS AND METHOD OF DRIVING THE SAME - A radiation image pickup apparatus allowed to restore a change in characteristics in a pixel transistors caused by radiation, and a method of driving the same are provided. The radiation image pickup apparatus includes: a pixel section including a plurality of unit pixels and generating an electrical signal based on incident radiation, each of the unit pixels including one or more pixel transistors and a photoelectric conversion element; a drive section for selectively driving the unit pixels of the pixel section; and a characteristic restoring section including a first constant current source for annealing and a selector switch for changing a current path from the unit pixels to the first constant current source at the time of non-measurement of the radiation, and allowing an annealing current to flow through the pixel transistor, thereby restoring characteristics of the pixel transistor. | 08-25-2011 |
20120007988 | IMAGING DEVICE, DISPLAY-IMAGING DEVICE, AND ELECTRONIC EQUIPMENT - Disclosed herein is an imaging device including: a plurality of photodetecting elements arranged on a substrate, each having a first semiconductor layer for the channel region; and a plurality of driving elements arranged on the substrate, each having a second semiconductor layer for the channel region, wherein the first and second semiconductor layers each are a crystallized semiconductor layer, the first and second semiconductor layers each are approximately equal in thickness and impurity concentration, and the first and second semiconductor layers each have an average trap level density no higher than 2.0×10 | 01-12-2012 |
20120038018 | PHOTOELECTRIC CONVERSION ELEMENT AND METHOD FOR MANUFACTURING SAME - A photoelectric conversion element includes a first semiconductor layer that exhibits a first conductivity type and is provided in a selective area over a substrate, a second semiconductor layer that exhibits a second conductivity type and is disposed opposed to the first semiconductor layer, and a third semiconductor layer that is provided between the first and second semiconductor layers and exhibits a substantially intrinsic conductivity type. The third semiconductor layer has at least one corner part that is not in contact with the first semiconductor layer. | 02-16-2012 |
20120248318 | RADIOGRAPHIC IMAGE-PICKUP DEVICE AND RADIOGRAPHIC IMAGE-PICKUP DISPLAY SYSTEM - A radiographic image-pickup device includes: a photoelectric conversion layer; a wavelength conversion layer provided on the photoelectric conversion layer and converting a wavelength of radiation into a wavelength within a sensitivity band of the photoelectric conversion layer; and a low-refractive-index layer provided between the photoelectric conversion layer and the wavelength conversion layer, and having a refractive index lower than a refractive index of each of the photoelectric conversion layer and the wavelength conversion layer. | 10-04-2012 |
20120299070 | PHOTOELECTRIC CONVERSION ELEMENT AND PHOTOELECTRIC CONVERTER - Disclosed herein is a photoelectric conversion element including: a first semiconductor layer of a first conductivity type provided above a substrate; a second semiconductor layer of a second conductivity type provided in a higher layer than the first semiconductor layer; a third semiconductor layer of a third conductivity type provided between the first and second semiconductor layers and lower in electrical conductivity than the first and second semiconductor layers; and a light-shielding layer provided between the substrate and first semiconductor layer. | 11-29-2012 |
20120313103 | RADIOACTIVE-RAY IMAGING APPARATUS, RADIOACTIVE-RAY IMAGING DISPLAY SYSTEM AND TRANSISTOR - Disclosed herein is a transistor including: a semiconductor layer; a first gate insulation film and a first interlayer insulation film which are provided on a specific surface side of the semiconductor layer; a first gate electrode provided at a location between the first gate insulation film and the first interlayer insulation film; an insulation film provided on the other surface side of the semiconductor layer; source and drain electrodes provided by being electrically connected to the semiconductor layer; and a shield electrode layer provided in such a way that at least portions of the shield electrode layer face edges of the first gate electrode, wherein at least one of the first gate insulation film, the first interlayer insulation film and the insulation film include a silicon-oxide film. | 12-13-2012 |
20130149809 | PHOTOELECTRIC CONVERSION ELEMENT AND METHOD FOR MANUFACTURING SAME - A photoelectric conversion element includes a first semiconductor layer that exhibits a first conductivity type and is provided in a selective area over a substrate, a second semiconductor layer that exhibits a second conductivity type and is disposed opposed to the first semiconductor layer, and a third semiconductor layer that is provided between the first and second semiconductor layers and exhibits a substantially intrinsic conductivity type. The third semiconductor layer has at least one corner part that is not in contact with the first semiconductor layer. | 06-13-2013 |
20130234219 | RADIOACTIVE-RAY IMAGING APPARATUS, RADIOACTIVE-RAY IMAGING DISPLAY SYSTEM AND TRANSISTOR - Disclosed herein is a transistor including: a semiconductor layer; a first gate insulation film and a first interlayer insulation film which are provided on a specific surface side of the semiconductor layer; a first gate electrode provided at a location between the first gate insulation film and the first interlayer insulation film; an insulation film provided on the other surface side of the semiconductor layer; source and drain electrodes provided by being electrically connected to the semiconductor layer; and a shield electrode layer provided in such a way that at least portions of the shield electrode layer face edges of the first gate electrode, wherein at least one of the first gate insulation film, the first interlayer insulation film and the insulation film include a silicon-oxide film. | 09-12-2013 |
Patent application number | Description | Published |
20090211329 | METHOD OF MANUFACTURING BOTTLE CAN - In this bottle can manufacturing method, when a portion located at the skirt portion | 08-27-2009 |
20100326159 | BOTTLE CAN MEMBER, BOTTLE, AND THREAD FORMING DEVICE - An effective thread number in the thread section which is disposed on the mouth section of the bottle is formed to be 2.2. That is, the thread section is formed such that the thread section | 12-30-2010 |
20100326164 | BOTTLE CAN MEMBER, BOTTLE, AND THREAD FORMING DEVICE - An effective thread number in the thread section which is disposed on the mouth section of the bottle is formed to be 2.2. That is, the thread section is formed such that the thread section | 12-30-2010 |
20100326946 | BOTTLE CAN MEMBER, BOTTLE, AND THREAD FORMING DEVICE - An effective thread number in the thread section which is disposed on the mouth section of the bottle is formed to be 2.2. That is, the thread section is formed such that the thread section | 12-30-2010 |
20120269602 | BOTTLE CAN MEMBER, BOTTLE, AND THREAD FORMING DEVICE - An effective thread number in the thread section which is disposed on the mouth section of the bottle is formed to be 2.2. That is, the thread section is formed such that the thread section | 10-25-2012 |
Patent application number | Description | Published |
20090141224 | PHOTOSENSOR AND DISPLAY DEVICE - A photosensor including a semiconductor thin film having a light receiving portion includes the following elements. A substrate has a recess with an inclined side wall having a forward tapered shape. A reflective material layer is disposed along the recess of the substrate. An insulating layer covers the substrate having thereon the reflective material layer. The semiconductor thin film is disposed on the insulating layer so as to cross the recess. The light receiving portion of the semiconductor thin film is disposed above the recess. | 06-04-2009 |
20090159893 | LIGHT-RECEIVING ELEMENT AND DISPLAY DEVICE - A light-receiving element includes: a first-conductivity-type semiconductor region configured to be formed over an element formation surface; a second-conductivity-type semiconductor region configured to be formed over the element formation surface; an intermediate semiconductor region configured to be formed over the element formation surface between the first-conductivity-type semiconductor region and the second-conductivity-type semiconductor region, and have an impurity concentration lower than impurity concentrations of the first-conductivity-type semiconductor region and the second-conductivity-type semiconductor region. The light-receiving element further includes: a first electrode configured to be electrically connected to the first-conductivity-type semiconductor region; a second electrode configured to be electrically connected to the second-conductivity-type semiconductor region; and a control electrode configured to be formed in an opposed area that exists on the element formation surface. | 06-25-2009 |
20090159901 | DISPLAY - A display includes: a substrate having a pixel region and a sensor region in which photo-sensor parts are formed; an illuminating section operative to illuminate the substrate from one surface side of the substrate; a thin film photodiode disposed in the sensor region, having at least a P-type semiconductor region and an N-type semiconductor region, and operative to receive light incident from the other surface side of the substrate; and a metallic film formed on the one surface side of the substrate so as to face the thin film photodiode through an insulator film, operative to restrain light generated from the illuminating section from being directly incident on the thin film photodiode from the one surface side, and fixed to a predetermined potential, wherein in the thin film photodiode, the width of the P-type semiconductor region and the width of the N-type semiconductor region are different from each other. | 06-25-2009 |
20090207153 | LIQUID CRYSTAL DISPLAY DEVICE AND A METHOD OF MANUFACTURING THE SAME - Disclosed herein is a liquid crystal display device including a liquid crystal panel having a first substrate, a second substrate facing the first substrate, a liquid crystal layer disposed between the first substrate and the second substrate, and first and second electrodes formed on a surface side, of the first substrate, facing the second substrate, a transverse electric field being applied to the liquid crystal layer through the first and second electrodes, thereby displaying an image in a pixel area; wherein the first substrate includes: a light receiving element provided on the surface, of the first substrate, facing the second substrate, for receiving an incident light on a light receiving surface thereof, thereby forming data on the received light; and a planarizing film provided on the surface side, of the first substrate, facing the second substrate so as to cover the light receiving element. | 08-20-2009 |
20090268132 | LIQUID CRYSTAL DISPLAY APPARATUS - Disclosed herein is a liquid crystal display apparatus, including: a liquid crystal panel having a pixel region in which first and second electrodes apply an electric field to a liquid crystal layer to display an image; the liquid crystal panel including a photo-sensor element having a light receiving face at which the photo-sensor element receives incident light through the liquid crystal layer in the pixel region to produce received light data; at least one of the first and second electrodes being formed in a region of the pixel region other than a light receiving face corresponding region of the pixel region which corresponds to the light receiving face of the photo-sensor element. | 10-29-2009 |
20100164921 | DISPLAY APPARATUS - Improvement of the image quality and position detection accuracy is implemented. Operation of a backlight | 07-01-2010 |
Patent application number | Description | Published |
20150060817 | DISPLAY DEVICE - An organic electroluminescent device with a touch sensor including: a first substrate; a second substrate arranged opposite to the first substrate; an organic EL element layer arranged above the first substrate; a first sealing film arranged toward the second substrate of the organic EL element layer, covering the organic EL element layer, and including a first inorganic layer; plural first detection electrodes extending in one direction, and arranged in parallel toward the second substrate of the first sealing film; a second sealing film arranged toward the second substrate of the first detection electrodes, and including a second inorganic layer; plural second detection electrodes extending in another direction different from the one direction, and arranged in parallel toward the second substrate of the second sealing film; and a touch sensor control unit controlling a potential to detect a touch with a display surface. | 03-05-2015 |
20150060832 | ORGANIC ELECTROLUMINESCENT DISPLAY DEVICE - An organic electroluminescent display device includes a first insulating layer that buries a peripheral portion of a first electrode and has an opening exposing an area of the first electrode inner to the peripheral portion thereof; a second electrode that is in contact with the first electrode in the opening and is provided continuously on a top surface of the first electrode and onto a top surface of the first insulating layer; a second insulating layer covering a peripheral portion of the second electrode; an organic EL layer; and a third electrode. The second electrode includes a stepped portion. An area where the stepped portion is included and the second electrode, the organic electroluminescence layer and the third electrode overlap each other is a light emitting area. Light emitted by the organic EL layer is reflected by the stepped portion. | 03-05-2015 |
20150069362 | ORGANIC ELECTROLUMINESCENT DISPLAY DEVICE HAVING AN INPUT FUNCTION - An organic electroluminescent display device includes a first substrate having a pixel area including a plurality of pixels each including a plurality of sub pixels, a light emitting devices are provided in correspondence with the sub pixels, and a partition layer covering a peripheral portion of each of the sub pixels; and a second substrate having a sensing unit including a first electrode pattern extending in one direction and a second electrode pattern extending in a direction intersecting the one direction, and the first electrode pattern and the second electrode pattern is provided out of contact from each other. The first electrode pattern is located to overlap the partition layer so as to enclose the sub pixels. The first electrode pattern included in the sensing unit encloses the sub pixels, and thus light is prevented from leaking to adjacent sub pixels. | 03-12-2015 |
20150077656 | DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME - In a seal part where a translucent opposite substrate and an element substrate are bonded together, a peripheral member is provided in such a manner as to be buried in a sealing member. This prevents the sealing member from breaking, thus making it possible to make the seal part durable to improve the strength of the panel. Further, an output wiring connected to an electrode pattern of a sensing unit can be protected by being covered with a protective insulating layer. The peripheral member and the protective insulating layer can be formed by the same insulating material. This makes it possible to simplify the process to reduce production costs. | 03-19-2015 |