Patent application number | Description | Published |
20090140458 | POROUS TEMPLATE AND IMPRINTING STACK FOR NANO-IMPRINT LITHOGRAPHY - An imprint lithography template or imprinting stack includes a porous material defining a multiplicity of pores with an average pore size of at least about 0.4 nm. A porosity of the porous material is at least about 10%. The porous template, the porous imprinting stack, or both may be used in an imprint lithography process to facilitate diffusion of gas trapped between the template and the imprinting stack into the template, the imprinting stack or both, such that polymerizable material between the imprinting stack and the template rapidly forms a substantially continuous layer between the imprinting stack and the template. | 06-04-2009 |
20090148032 | Alignment Using Moire Patterns - Methods of determining relative spatial parameters between two substrates in a process of alignment are described. Generally, multiple alignment data may be collected from phase information using a pair of alignment marks. | 06-11-2009 |
20090148619 | Controlling Thickness of Residual Layer - Methods for manufacturing a patterned surface on a substrate are described. Generally, the patterned surface is defined by a residual layer having a thickness of less than approximately 5 nm. | 06-11-2009 |
20090200710 | EXTRUSION REDUCTION IN IMPRINT LITHOGRAPHY - Devices positioned between an energy source and an imprint lithography template may block exposure of energy to portions of polymerizable material dispensed on a substrate. Portions of the polymerizable material that are blocked from the energy may remain fluid, while the remaining polymerizable material is solidified. | 08-13-2009 |
20090212012 | CRITICAL DIMENSION CONTROL DURING TEMPLATE FORMATION - Thickness of a residual layer may be altered to control critical dimension of features in a patterned layer provided by an imprint lithography process. The thickness of the residual layer may be directly proportional or inversely proportional to the critical dimension of features. Dispensing techniques and material selection may also provide control of the critical dimension of features in the patterned layer. | 08-27-2009 |
20100078846 | Particle Mitigation for Imprint Lithography - Particles may be present on substrates and/or templates during nano-lithographic imprinting. Particles may be mitigated and/or removed using localized removal techniques and/or imprinting techniques as described. | 04-01-2010 |
20100084376 | NANO-IMPRINT LITHOGRAPHY TEMPLATES - Porous nano-imprint lithography templates may include pores, channels, or porous layers arranged to allow evacuation of gas trapped between a nano-imprint lithography template and substrate. The pores or channels may be formed by etch or other processes. Gaskets may be formed on an nano-imprint lithography template to restrict flow of polymerizable material during nano-imprint lithography processes. | 04-08-2010 |
20100098848 | Fluid Dispense Device Calibration - Systems and methods for calibrating a dispense head to provide substantially uniform droplets on a substrate are described. | 04-22-2010 |
20100102469 | Strain and Kinetics Control During Separation Phase of Imprint Process - Systems and methods for improving robust layer separation during the separation process of an imprint lithography process are described. Included are methods of matching strains between a substrate to be imprinted and the template, varying or modifying the forces applied to the template and/or the substrate during separation, or varying or modifying the kinetics of the separation process. | 04-29-2010 |
20100286811 | Residual Layer Thickness Measurement and Correction - In nano-imprint lithography it is important to detect thickness non-uniformity of a residual layer formed on a substrate. Such non-uniformity is compensated such that a uniform residual layer may be formed. Compensation is performed by calculating a corrected fluid drop pattern. | 11-11-2010 |
20110260361 | SAFE DEPARATION FOR NANO IMPRINTING - Control of lateral strain and lateral strain ratio (d | 10-27-2011 |
20120006703 | CONTAMINATE DETECTION AND SUBSTRATE CLEANING - Detection of periodically repeating nanovoids is indicative of levels of substrate contamination and may aid in reduction of contaminants on substrates. Systems and methods for detecting nanovoids, in addition to, systems and methods for cleaning and/or maintaining cleanliness of substrates are described. | 01-12-2012 |
20120187085 | CRITICAL DIMENSION CONTROL DURING TEMPLATE FORMATION - Thickness of a residual layer may be altered to control critical dimension of features in a patterned layer provided by an imprint lithography process. The thickness of the residual layer may be directly proportional or inversely proportional to the critical dimension of features. Dispensing techniques and material selection may also provide control of the critical dimension of features in the patterned layer. | 07-26-2012 |
20120189780 | Controlling Thickness of Residual Layer - Methods for manufacturing a patterned surface on a substrate are described. Generally, the patterned surface is defined by a residual layer having a thickness of less than approximately 5 nm. | 07-26-2012 |
20120269972 | Optically Absorptive Material for Alignment Marks - Imprint lithography templates having alignment marks with highly absorptive material. The alignment marks are insensitive to the effects of liquid spreading and can provide stability and increase contrast to alignment system during liquid imprint filling of template features. | 10-25-2012 |
20130241109 | EXTRUSION REDUCTION IN IMPRINT LITHOGRAPHY - Devices positioned between an energy source and an imprint lithography template may block exposure of energy to portions of polymerizable material dispensed on a substrate. Portions of the polymerizable material that are blocked from the energy may remain fluid, while the remaining polymerizable material is solidified. | 09-19-2013 |
20130266682 | NANO-IMPRINT LITHOGRAPHY TEMPLATES - Porous nano-imprint lithography templates may include pores, channels, or porous layers arranged to allow evacuation of gas trapped between a nano-imprint lithography template and substrate. The pores or channels may be formed by etch or other processes. Gaskets may be formed on an nano-imprint lithography template to restrict flow of polymerizable material during nano-imprint lithography processes. | 10-10-2013 |
20140117574 | Strain and Kinetics Control During Separation Phase of Imprint Process - Systems and methods for improving robust layer separation during the separation process of an imprint lithography process are described. Included are methods of matching strains between a substrate to be imprinted and the template, varying or modifying the forces applied to the template and/or the substrate during separation, or varying or modifying the kinetics of the separation process. | 05-01-2014 |
20150014876 | IMPRINT APPARATUS, IMPRINT METHOD, AND ARTICLE MANUFACTURING METHOD - Provided is an imprint apparatus that applies a resin to several locations on a substrate, brings the resin and a mold into contact, and transfers a contoured pattern formed in the mold to the resin, comprising: a controller that sets a principal axis direction according to the contoured pattern and determines the application positions of the resin based on the principal axis direction that has been set such that the distances between resin drops that have been applied so as to be separated in the principal axis direction is larger than the distances between resin drops that have been applied so as to be separated in a direction that is perpendicular to the principal axis direction; and a dispenser that applies the resin based on the application position that has been determined. | 01-15-2015 |
20150014877 | IMPRINT APPARATUS, IMPRINT METHOD, AND ARTICLE MANUFACTURING METHOD - Provided is an imprint apparatus that applies a resin (drops) dispersed, at a plurality of locations on a substrate, brings the resin and a mold into contact, and transfers the contoured pattern that is formed in the mold to the resin comprising: a controller that sets a principal axis direction according to the contoured pattern and an array direction in which a plurality of resin drops are aligned, and determines application positions for the resin such that the array direction is angled with respect to the principal axis direction; and a dispenser that applies the resin based on the application positions that have been determined. | 01-15-2015 |
20150017329 | DROP PATTERN GENERATION FOR IMPRINT LITHOGRAPHY WITH DIRECTIONALLY-PATTERNED TEMPLATES - Imprint lithography methods that incorporate depositing droplets of polymerizable material in patterns that improve fill time performance when employing directionally-oriented imprint templates. The patterns are based on grid arrays formed of repeating sets of rows of droplets oriented along fast and slow axes, with droplets of each row offset along the slow axis relative to droplets in adjacent rows. | 01-15-2015 |