Patent application number | Description | Published |
20090140242 | SEMICONDUCTOR SUBSTRATE WITH SOLID PHASE EPITAXIAL REGROWTH WITH REDUCED JUNCTION LEAKAGE AND METHOD OF PRODUCING SAME - Method of producing a semiconductor device, comprising: a) providing a semiconductor substrate, b) making a first amorphous layer in a top layer of the semiconductor substrate by a suitable implant, the first amorphous layer having a first depth, c) implanting a first dopant into the semiconductor substrate to provide the first amorphous layer with a first doping profile, d) applying a first solid phase epitaxial regrowth action to partially regrow the first amorphous layer and form a second amorphous layer having a second depth that is less than the first depth and activate the first dopant, e) implanting a second dopant into the semiconductor substrate to provide the second amorphous layer with a second doping profile with a higher doping concentration than the first doping profile, f) applying a second solid phase epitaxial regrowth action to regrow the second amorphous layer and activate the second dopant. | 06-04-2009 |
20110303280 | FABRICATION METHOD FOR INTERDIGITATED BACK CONTACT PHOTOVOLTAIC CELLS - A method for manufacturing interdigitated back contact photovoltaic cells is disclosed. In one aspect, the method includes providing on a rear surface of a substrate a first doped layer of a first dopant type, and providing a dielectric masking layer overlaying it. Grooves are formed through the dielectric masking layer and first doped layer, extending into the substrate in a direction substantially orthogonal to the rear surface and extending in a lateral direction underneath the first doped layer at sides of the grooves. Directional doping is performed in a direction substantially orthogonal to the rear surface, thereby providing doped regions with dopants of a second dopant type at a bottom of the grooves. Dopant diffusion is performed to form at the rear side of the substrate one of the emitter regions and back surface field regions between the grooves and the other at the bottom of the grooves. | 12-15-2011 |
20140174526 | INTERDIGITATED ELECTRODE FORMATION - The disclosed technology generally relates to photovoltaic devices and methods of fabricating photovoltaic devices, and more particularly relates to interdigitated back contact photovoltaic cells and methods of fabricating the same. In one aspect, a method of forming first and second interdigitated electrodes on a semiconductor substrate comprises providing a dielectric layer on the rear surface of the semiconductor substrate. The method additionally comprises providing a metal seed layer on the dielectric layer. The method additionally comprises patterning the metal seed layer by laser ablation, thereby separating it into a first seed layer and a second seed layer with a separation region interposed therebetween, wherein the first seed layer and the second seed layer are interdigitated and electrically isolated from each other. The method further comprises thickening the first seed layer and the second seed layer by plating, thereby forming the first electrode and the second electrode. | 06-26-2014 |
20140217467 | METHODS OF FORMING SUBSTRATES COMPRISED OF DIFFERENT SEMICONDUCTOR MATERIALS AND THE RESULTING DEVICE - Obtaining a structure comprised of first and second layers of a first semiconductor materials and a strain relief buffer (SRB) layer between the first and second layers, forming a sidewall spacer on the sidewalls of an opening in the second layer, and forming a third semiconductor material in the opening, wherein the first, second and third semiconductor materials are different. A device includes first and second layers of first and second semiconductor materials and an SRB layer positioned above the first layer. The second layer is positioned above a first portion of the SRB layer, a region of a third semiconductor material is in an opening in the second layer and above a second portion of the SRB layer, and an insulating material is positioned between the region comprised of the third semiconductor material and the second layer. | 08-07-2014 |
20150061014 | FIN PITCH SCALING AND ACTIVE LAYER ISOLATION - A first semiconductor structure includes a bulk silicon substrate and one or more original silicon fins coupled to the bulk silicon substrate. A dielectric material is conformally blanketed over the first semiconductor structure and recessed to create a dielectric layer. A first cladding material is deposited adjacent to the original silicon fin, after which the original silicon fin is removed to form a second semiconductor structure having two fins that are electrically isolated from the bulk silicon substrate. A second cladding material is patterned adjacent to the first cladding material to form a third semiconductor structure having four fins that are electrically isolated from the bulk silicon substrate. | 03-05-2015 |
20160005834 | METHODS OF FORMING A CHANNEL REGION FOR A SEMICONDUCTOR DEVICE BY PERFORMING A TRIPLE CLADDING PROCESS - One illustrative method disclosed herein includes, among other things, forming a plurality of trenches that define a fin, performing a plurality of epitaxial deposition processes to form first, second and third layers of epi semiconductor material around an exposed portion of the fin, removing the first, second and third layers of epi semiconductor material from above an upper surface of the fin so as to thereby expose the fin, selectively removing the fin relative to the first, second and third layers of epi semiconductor material so as to thereby define two fin structures comprised of the first, second and third layers of epi semiconductor material, and forming a gate structure around a portion of at least one of the fin structures comprised of the first, second and third layers of epi semiconductor material. | 01-07-2016 |
20160099343 | TUNNELING FIELD EFFECT TRANSISTOR AND METHODS OF MAKING SUCH A TRANSISTOR - One illustrative method of forming a TFET device includes forming a first semiconductor material that extends for a full length of a drain region, a gate region and a source region of the device, masking the drain region while exposing at least a portion of the gate region and exposing the source region, forming a second semiconductor material above the gate region and above the source region, forming a third semiconductor material above the second semiconductor material and above the gate region and above the source region, the third semiconductor material being doped with an opposite type of dopant material than in the first semiconductor material, masking the drain region, and forming a gate structure above at least a portion of the exposed gate region. | 04-07-2016 |
Patent application number | Description | Published |
20130164254 | ANTICANCER FUSION PROTEIN - The fusion protein, especially recombinant, comprising domain (a) which is a functional fragment of soluble hTRAIL protein sequence beginning with an amino acid at a position not lower than hTRAIL95 or a sequence having at least 70% homology thereto; and domain (b) which is a sequence of pro-apoptotic effector peptide, wherein the sequence of domain (b) is attached at C-terminus and/or N-terminus of domain (a). The fusion protein has anticancer activity. The nucleotide sequence coding the fusion protein, expression vector and host cell for the preparation of the fusion protein, and the use of the fusion protein for treating cancer diseases. | 06-27-2013 |
20130251676 | ANTICANCER FUSION PROTEIN - A fusion protein comprising domain (a) which is a functional fragment of hTRAIL protein sequence, which fragment begins with an amino acid at a position not lower than hTRAIL95, or a homolog of said functional fragment having at least 70% sequence identity; and domain (b) which is a sequence of an immunostimulating effector peptide, wherein the sequence of domain (b) is attached at the C-terminus or N-terminus of domain (a). The fusion protein can be used for the treatment of cancer diseases. | 09-26-2013 |
20150044162 | ANTICANCER FUSION PROTEIN - A fusion protein comprising domain (a) which is a functional fragment of hTRAIL protein sequence, which fragment begins with an amino acid at a position not lower than hTRAIL95, or a homolog of said functional fragment having at least 70% sequence identity, preferably 85% identity and ending with the amino acid hTRAIL281; and domain (b) which is a sequence of an effector peptide inhibiting protein synthesis, wherein the sequence of domain (b) is attached at the C-terminus or N-terminus of domain (a). The fusion protein can be used for the treatment of cancer diseases. | 02-12-2015 |
Patent application number | Description | Published |
20130288963 | ANTICANCER FUSION PROTEIN - A fusion protein comprising domain (a) which is a functional fragment of hTRAIL protein sequence, which fragment begins with an amino acid at a position not lower than hTRAIL95, or a homolog of said functional fragment having at least 70% sequence identity; and domain (b) which is a sequence of an anti-angiogenic effector peptide, wherein the sequence of domain (b) is attached at the C-terminus or N-terminus of domain (a). The fusion protein can be used for the treatment of cancer diseases. | 10-31-2013 |
20140031283 | ANTICANCER FUSION PROTEIN - A fusion protein comprising domain (a) which is the functional fragment of a hTRAIL protein sequence, which fragment begins with an amino acid at a position not lower than hTRAIL95, or a homolog of said functional fragment having at least 70% sequence identity; and at least one domain (b) which is the sequence of an effector peptide having anti-proliferative activity against tumour cells, wherein the sequence of domain (b) is attached at the C-terminus or at the N-terminus of domain (a). The fusion protein can be used for the treatment of cancer diseases. | 01-30-2014 |
20140377216 | ANTICANCER FUSION PROTEIN - A fusion protein comprising domain (a) which is a functional fragment of hTRAIL protein sequence, which fragment begins with an amino acid at a position not lower than hTRAIL95, or a homolog of said functional fragment having at least 70% sequence identity, preferably 85% identity and ending with the amino acid hTRAIL281; and at least one domain (b) which is a sequence of a cytolytic effector peptide forming pores in the cell membrane, wherein the sequence of domain (b) is attached at the C-terminus or N-terminus of domain (a). The fusion protein can be used for the treatment of cancer diseases. | 12-25-2014 |
Patent application number | Description | Published |
20100018033 | Method For Producing a Coil, in Particular an Ignition Coil For a Motor Vehicle - A method for producing a coil, in particular an ignition coil for a motor vehicle, in which a primary winding is wound onto a winding mandrel. Then the winding mandrel is introduced into a housing of the coil and the winding mandrel then is removed from the housing, the primary winding remaining inside the housing. Finally, additional components of the coil, in particular a secondary coil shell onto which a secondary winding has been wound, are introduced into the housing, so that the secondary winding is concentrically disposed within the primary winding while dispensing with a separate primary coil shell. The method allows a design of the coil that is more compact in diameter. | 01-28-2010 |
20140218154 | ELECTRICAL CONNECTION CONFIGURATION FOR AN IGNITION COIL - An electrical connection configuration, e.g., for an ignition coil, includes: an enameled wire sheathed in insulating enamel, and a contact element for the electrical contacting of the enameled wire, the contact element having a contact region for the electrical contacting of the enameled wire. The contact region has at least one sharp edge, and the enameled wire is routed along the sharp edge, such that a region of the enameled wire stripped of the enamel is provided, which rests against the contact region of the contact element for the electrical contacting. | 08-07-2014 |
20150219062 | IGNITION SYSTEM FOR AN INTERNAL COMBUSTION ENGINE - An ignition system includes: a step-up transformer having a primary side and a secondary side; an electric energy source which is able to be connected to the primary side; a spark gap, which is designed to carry a current transferred to the secondary side by the step-up transformer. The step-up transformer has a bypass for transferring electric energy from the electric energy source to the secondary side. The bypass is designed to support a decaying electrical signal in the secondary coil of the high-voltage generator as of a predefined time, or as of a predefined intensity of the current being reached. | 08-06-2015 |