Patent application number | Description | Published |
20090045394 | SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURE THEREOF - A method of manufacturing a semiconductor device comprises depositing a semiconductor layer over a semiconductor surface having at least one first region with a first (average surface lattice) parameter value and at least one second region having a second parameter value different from the first. The semiconductor layer is deposited to a thickness so self-organised islands form over both the first and second regions. The difference in the parameter value means the islands over the first region have a first average parameter value and the islands over the second region have a second average parameter value different from the first. A capping layer is deposited over islands and has a greater forbidden bandgap than the islands whereby the islands form quantum dots, which have different properties over the first and second regions due to difference(s) between the first and second region islands. | 02-19-2009 |
20090256165 | METHOD OF GROWING AN ACTIVE REGION IN A SEMICONDUCTOR DEVICE USING MOLECULAR BEAM EPITAXY - A method of making an (Al, Ga, In)N semiconductor device having a substrate and an active region is provided. The method includes growing the active region using a combination of (i) plasma-assisted molecular beam epitaxy; and (ii) molecular beam epitaxy with a gas including nitrogen-containing molecules in which the nitrogen-containing molecules dissociate at a surface of the substrate at a temperature which the active region is grown. | 10-15-2009 |
20120025139 | II-III-V COMPOUND SEMICONDUCTOR - The present application provides a new composition of matter in the form of a new compound semiconductor family of the type group Zn-(II)-III-N, where III denotes one or more elements in Group III of the periodic table and (II) denotes one or more optional further elements in Group II of the periodic table. Members of this family include for example, ZnGaN, ZnInN, ZnInGaN, ZnAlN, ZnAlGaN, ZnAlInN or ZnAlGaInN. This type of compound semiconductor material is not previously known in the prior art. | 02-02-2012 |
20120025146 | II-III-N SEMICONDUCTOR NANOPARTICLES AND METHOD OF MAKING SAME - The present application provides nitride semiconductor nanoparticles, for example nanocrystals, made from a new composition of matter in the form of a novel compound semiconductor family of the type group II-III-N, for example ZnGaN, ZnInN, ZnInGaN, ZnAlN, ZnAlGaN, ZnAlInN and ZnAlGaInN. This type of compound semiconductor nanocrystal is not previously known in the prior art. The invention also discloses II-N semiconductor nanocrystals, for example ZnN nanocrystals, which are a subgroup of the group II-III-N semiconductor nanocrystals. | 02-02-2012 |
20120068196 | SEMICONDUCTOR LIGHT-EMITTING DEVICE AND A METHOD OF MANUFACTURE THEREOF - A semiconductor light-emitting device comprises a semiconductor layer structure disposed over a substrate. The layer structure includes an active region disposed between a first layer and a second layer. One or more cavities are present in the layer structure, each cavity being coincident with a threading dislocation and extending from an upper surface of the layer structure through at least the second layer and the active region. Removing material where a threading dislocation is present provides effective suppression of the tendency of the threading dislocations to act as non-radiative centres, thereby improving the light output efficiency of the device. The device may be manufactured by a first step of selectively etching the layer structure at the locations of one or more threading dislocation to form a pilot cavity at the or each location. A second etching step is applied to increase the depth of each pilot cavity. | 03-22-2012 |
20120204957 | METHOD FOR GROWING AlInGaN LAYER - A method for growing an In | 08-16-2012 |
20130015362 | FLUID PURIFICATION AND SENSOR SYSTEMAANM HOOPER; Stewart EdwardAACI OxfordAACO GBAAGP HOOPER; Stewart Edward Oxford GBAANM SMEETON; Tim MichaelAACI OxfordAACO GBAAGP SMEETON; Tim Michael Oxford GBAANM EVANS; AllanAACI OxfordAACO GBAAGP EVANS; Allan Oxford GB - A system and method are disclosed for the simultaneous optical disinfection and detection of biological particles in a flowing fluid, such as air or water, medium. A light source for irradiating the flowing medium is a dual wavelength laser element simultaneously emitting a visible laser beam and an ultraviolet laser beam. In particular, a laser diode may generate a first visible laser light beam, and a second ultraviolet laser light beam may be generated by passing the first laser light beam through a frequency doubling crystal. Optical detectors measure scattering, fluorescence and/or transmission of the laser light beams from the air or water medium to determine the presence of biological particles in real-time. | 01-17-2013 |
20140105784 | ULTRAVIOLET TREATMENT DEVICE - A light source is provided for use in a treatment device for treating a fluid, solid or surface. The light source includes a light emitting diode that emits a first component of ultraviolet (UV) light, and a UV laser light source that emits a second component of UV light having a peak wavelength different from a peak wavelength of the first component of UV light. The first component of UV light and the second component of UV light are applied to treat the fluid or surface. The UV laser light source may include a laser light source and a frequency doubling component that receives light from the laser light source and converts the light to the second component of UV light. A treatment device includes the described light source and a container containing the fluid, or a solid surface, to be treated. | 04-17-2014 |
20150014587 | II-III-N SEMICONDUCTOR NANOPARTICLES AND METHOD OF MAKING SAME - The present application provides nitride semiconductor nanoparticles, for example nanocrystals, made from a new composition of matter in the form of a novel compound semiconductor family of the type group II-III-N, for example ZnGaN, ZnInN, ZnInGaN, ZnAlN, ZnAlGaN, ZnAlInN and ZnAlGaInN. This type of compound semiconductor nanocrystal is not previously known in the prior art. The invention also discloses II-N semiconductor nanocrystals, for example ZnN nanocrystals, which are a subgroup of the group II-III-N semiconductor nanocrystals. The composition and size of the new and novel II-III-N compound semiconductor nanocrystals can be controlled in order to tailor their band-gap and light emission properties. Efficient light emission in the ultraviolet-visible-infrared wavelength range is demonstrated. The products of this invention are useful as constituents of optoelectronic devices such as solar cells, light emitting diodes, laser diodes and as a light emitting phosphor material for LEDs and emissive EL displays. | 01-15-2015 |