Patent application number | Description | Published |
20090163041 | LOW WET ETCH RATE SILICON NITRIDE FILM - The present invention pertains to methods of depositing low wet etch rate silicon nitride films on substrates using high-density plasma chemical vapor deposition techniques at substrate temperatures below 600° C. The method additionally involves the maintenance of a relatively high ratio of nitrogen to silicon in the plasma and a low process pressure. | 06-25-2009 |
20100099236 | GAPFILL IMPROVEMENT WITH LOW ETCH RATE DIELECTRIC LINERS - A method of filling a trench is described and includes depositing a dielectric liner with a high ratio of silicon oxide to dielectric liner etch rate in fluorine-containing etch chemistries. Silicon oxide is deposited within the trench and etched to reopen or widen a gap near the top of the trench. The dielectric liner protects the underlying substrate during the etch process so the gap can be made wider. Silicon oxide is deposited within the trench again to substantially fill the trench. | 04-22-2010 |
20110061810 | Apparatus and Methods for Cyclical Oxidation and Etching - Apparatus and methods for the manufacture of semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof are described herein. Disclosed are various single chambers configured to form and/or shape a material layer by oxidizing a surface of a material layer to form an oxide layer; removing at least some of the oxide layer by an etching process; and cyclically repeating the oxidizing and removing processes until the material layer is formed to a desired shape. In some embodiments, the material layer may be a floating gate of a semiconductor device. | 03-17-2011 |
20110294300 | SELECTIVE ETCH FOR SILICON FILMS - A method of etching patterned heterogeneous silicon-containing structures is described and includes a remote plasma etch with inverted selectivity compared to existing remote plasma etches. The methods may be used to conformally trim polysilicon while removing little or no silicon oxide. More generally, silicon-containing films containing less oxygen are removed more rapidly than silicon-containing films which contain more oxygen. Other exemplary applications include trimming silicon carbon nitride films while essentially retaining silicon oxycarbide. Applications such as these are enabled by the methods presented herein and enable new process flows. These process flows are expected to become desirable for a variety of finer linewidth structures. Methods contained herein may also be used to etch silicon-containing films faster than nitrogen-and-silicon containing films having a greater concentration of nitrogen. | 12-01-2011 |
20120009796 | POST-ASH SIDEWALL HEALING - Methods of decreasing the effective dielectric constant present between two conducting components of an integrated circuit are described. The methods involve the use of a gas phase etch which is selective towards the oxygen-rich portion of the low-K dielectric layer. The etch rate attenuates as the etch process passes through the relatively high-K oxygen-rich portion and reaches the low-K portion. The etch process may be easily timed since the gas phase etch process does not readily remove the desirable low-K portion. | 01-12-2012 |
20120085733 | SELF ALIGNED TRIPLE PATTERNING - Embodiments of the present invention pertain to methods of forming features on a substrate using a self-aligned triple patterning (SATP) process. A stack of layers is patterned near the optical resolution of a photolithography system using a high-resolution photomask. The heterogeneous stacks are selectively etched to undercut a hard mask layer beneath overlying cores. A dielectric layer, which is flowable during formation, is deposited and fills the undercut regions as well as the regions between the heterogeneous stacks. The dielectric layer is anisotropically etched and a conformal spacer is deposited on and between the cores. The spacer is anisotropically etched to leave two spacers between each core. The cores are stripped and the spacers are used together with the remaining hard mask features to pattern the substrate at triple the density of the original pattern. | 04-12-2012 |
20120190178 | POLYSILICON FILMS BY HDP-CVD - Methods of forming polysilicon layers are described. The methods include forming a high-density plasma from a silicon precursor in a substrate processing region containing the deposition substrate. The described methods produce polycrystalline films at reduced substrate temperature (e.g. <500° C.) relative to prior art techniques. The availability of a bias plasma power adjustment further enables adjustment of conformality of the formed polysilicon layer. When dopants are included in the high density plasma, they may be incorporated into the polysilicon layer in such a way that they do not require a separate activation step. | 07-26-2012 |
20120211462 | REMOTELY-EXCITED FLUORINE AND WATER VAPOR ETCH - A method of etching exposed silicon oxide on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents combine with water vapor. The chemical reaction resulting from the combination produces reactants which etch the patterned heterogeneous structures to produce, in embodiments, a thin residual structure exhibiting little deformation. The methods may be used to conformally trim silicon oxide while removing little or no silicon, polysilicon, silicon nitride, titanium or titanium nitride. In an exemplary embodiment, the etch processes described herein have been found to remove mold oxide around a thin cylindrical conducting structure without causing the cylindrical structure to significantly deform. | 08-23-2012 |
20120238102 | METHODS FOR ETCH OF SIN FILMS - A method of selectively etching silicon nitride from a substrate comprising a silicon nitride layer and a silicon oxide layer includes flowing a fluorine-containing gas into a plasma generation region of a substrate processing chamber and applying energy to the fluorine-containing gas to generate a plasma in the plasma generation region. The plasma comprises fluorine radicals and fluorine ions. The method also includes filtering the plasma to provide a reactive gas having a higher concentration of fluorine radicals than fluorine ions and flowing the reactive gas into a gas reaction region of the substrate processing chamber. The method also includes exposing the substrate to the reactive gas in the gas reaction region of the substrate processing chamber. The reactive gas etches the silicon nitride layer at a higher etch rate than the reactive gas etches the silicon oxide layer. | 09-20-2012 |
20120238103 | METHODS FOR ETCH OF METAL AND METAL-OXIDE FILMS - A method of selectively etching a metal-containing film from a substrate comprising a metal-containing layer and a silicon oxide layer includes flowing a fluorine-containing gas into a plasma generation region of a substrate processing chamber, and applying energy to the fluorine-containing gas to generate a plasma in the plasma generation region. The plasma comprises fluorine radicals and fluorine ions. The method also includes filtering the plasma to provide a reactive gas having a higher concentration of fluorine radicals than fluorine ions, and flowing the reactive gas into a gas reaction region of the substrate processing chamber. The method also includes exposing the substrate to the reactive gas in the gas reaction region of the substrate processing chamber. The reactive gas etches the metal-containing layer at a higher etch rate than the reactive gas etches the silicon oxide layer. | 09-20-2012 |
20120325773 | INTEGRATED PROCESS MODULATION FOR PSG GAPFILL - A method of depositing a phosphosilicate glass (PSG) film on a substrate disposed in a substrate processing chamber includes depositing a first portion of the PSG film over the substrate using a high-density plasma process. Thereafter, a portion of the first portion of the PSG film may be etched back. The etch back process may include flowing a halogen precursor to the substrate processing chamber, forming a high-density plasma from the halogen precursor, and terminating flowing the halogen precursor after the etch back. The method also includes flowing a halogen scavenger to the substrate processing chamber to react with residual halogen in the substrate processing chamber, and exposing the first portion of the PSG film to a phosphorus-containing gas to provide a substantially uniform phosphorus concentration throughout the first portion of the PSG film. | 12-27-2012 |
20130034968 | DRY-ETCH FOR SILICON-AND-CARBON-CONTAINING FILMS - A method of etching exposed silicon-and-carbon-containing material on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor and an oxygen-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the exposed regions of silicon-and-carbon-containing material. The plasmas effluents react with the patterned heterogeneous structures to selectively remove silicon-and-carbon-containing material from the exposed silicon-and-carbon-containing material regions while very slowly removing other exposed materials. The silicon-and-carbon-containing material selectivity results partly from the presence of an ion suppression element positioned between the remote plasma and the substrate processing region. The ion suppression element reduces or substantially eliminates the number of ionically-charged species that reach the substrate. The methods may be used to selectively remove silicon-and-carbon-containing material at more than twenty times the rate of silicon oxide. | 02-07-2013 |
20130045605 | DRY-ETCH FOR SILICON-AND-NITROGEN-CONTAINING FILMS - A method of etching exposed silicon-and-nitrogen-containing material on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor and an oxygen-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the exposed regions of silicon-and-nitrogen-containing material. The plasmas effluents react with the patterned heterogeneous structures to selectively remove silicon-and-nitrogen-containing material from the exposed silicon-and-nitrogen-containing material regions while very slowly removing other exposed materials. The silicon-and-nitrogen-containing material selectivity results partly from the presence of an ion suppression element positioned between the remote plasma and the substrate processing region. The ion suppression element reduces or substantially eliminates the number of ionically-charged species that reach the substrate. The methods may be used to selectively remove silicon-and-nitrogen-containing material at more than twenty times the rate of silicon oxide. | 02-21-2013 |
20130052827 | SELECTIVE SUPPRESSION OF DRY-ETCH RATE OF MATERIALS CONTAINING BOTH SILICON AND OXYGEN - A method of suppressing the etch rate for exposed silicon-and-oxygen-containing material on patterned heterogeneous structures is described and includes a two stage remote plasma etch. Examples of materials whose selectivity is increased using this technique include silicon nitride and silicon. The first stage of the remote plasma etch reacts plasma effluents with the patterned heterogeneous structures to form protective solid by-product on the silicon-and-oxygen-containing material. The plasma effluents of the first stage are formed from a remote plasma of a combination of precursors, including a nitrogen-containing precursor and a hydrogen-containing precursor. The second stage of the remote plasma etch also reacts plasma effluents with the patterned heterogeneous structures to selectively remove material which lacks the protective solid by-product. The plasma effluents of the second stage are formed from a remote plasma of a fluorine-containing precursor. | 02-28-2013 |
20130059440 | SELECTIVE SUPPRESSION OF DRY-ETCH RATE OF MATERIALS CONTAINING BOTH SILICON AND NITROGEN - A method of suppressing the etch rate for exposed silicon-and-nitrogen-containing material on patterned heterogeneous structures is described and includes a two stage remote plasma etch. The etch selectivity of silicon relative to silicon nitride and other silicon-and-nitrogen-containing material is increased using the method. The first stage of the remote plasma etch reacts plasma effluents with the patterned heterogeneous structures to form protective solid by-product on the silicon-and-nitrogen-containing material. The plasma effluents of the first stage are formed from a remote plasma of a combination of precursors, including nitrogen trifluoride and hydrogen (H | 03-07-2013 |
20130089988 | SELECTIVE ETCH OF SILICON BY WAY OF METASTABLE HYDROGEN TERMINATION - Methods of etching exposed silicon on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor and a hydrogen-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the exposed regions of silicon. The plasmas effluents react with the patterned heterogeneous structures to selectively remove silicon while very slowly removing other exposed materials. The silicon selectivity results, in part, from a preponderance of hydrogen-containing precursor in the remote plasma which hydrogen terminates surfaces on the patterned heterogeneous structures. A much lower flow of the fluorine-containing precursor progressively substitutes fluorine for hydrogen on the hydrogen-terminated silicon thereby selectively removing silicon from exposed regions of silicon. The methods may be used to selectively remove silicon far faster than silicon oxide, silicon nitride and a variety of metal-containing materials. | 04-11-2013 |
20130130506 | SELECTIVE SUPPRESSION OF DRY-ETCH RATE OF MATERIALS CONTAINING BOTH SILICON AND NITROGEN - A method of suppressing the etch rate for exposed silicon-and-nitrogen-containing material on patterned heterogeneous structures is described and includes a two stage remote plasma etch. The etch selectivity of silicon relative to silicon nitride and other silicon-and-nitrogen-containing material is increased using the method. The first stage of the remote plasma etch reacts plasma effluents with the patterned heterogeneous structures to form protective solid by-product on the silicon-and-nitrogen-containing material. The plasma effluents of the first stage are formed from a remote plasma of a combination of precursors, including nitrogen trifluoride and hydrogen (H | 05-23-2013 |
20130130507 | DRY-ETCH FOR SILICON-AND-NITROGEN-CONTAINING FILMS - A method of etching exposed silicon-and-nitrogen-containing material on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor and an oxygen-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the exposed regions of silicon-and-nitrogen-containing material. The plasmas effluents react with the patterned heterogeneous structures to selectively remove silicon-and-nitrogen-containing material from the exposed silicon-and-nitrogen-containing material regions while very slowly removing other exposed materials. The silicon-and-nitrogen-containing material selectivity results partly from the presence of an ion suppression element positioned between the remote plasma and the substrate processing region. The ion suppression element reduces or substantially eliminates the number of ionically-charged species that reach the substrate. The methods may be used to selectively remove silicon-and-nitrogen-containing material at more than twenty times the rate of silicon oxide. | 05-23-2013 |
20130298942 | ETCH REMNANT REMOVAL - Methods of removing residual polymer from vertical walls of a patterned dielectric layer are described. The methods involve the use of a gas phase etch to remove the residual polymer without substantially disturbing the patterned dielectric layer. The gas phase etch may be used on a patterned low-k dielectric layer and may maintain the low dielectric constant of the patterned dielectric layer. The gas phase etch may further avoid stressing the patterned low-k dielectric layer by avoiding the use of liquid etchants whose surface tension can upset delicate low-K features. The gas phase etch may further avoid the formation of solid etch by-products which cars also deform the delicate features. | 11-14-2013 |
20140080308 | RADICAL-COMPONENT OXIDE ETCH - A method of etching exposed silicon oxide on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents combine with a nitrogen-and-hydrogen-containing precursor. Reactants thereby produced etch the patterned heterogeneous structures with high silicon oxide selectivity while the substrate is at high temperature compared to typical Siconi™ processes. The etch proceeds without producing residue on the substrate surface. The methods may be used to remove silicon oxide while removing little or no silicon, polysilicon, silicon nitride or titanium nitride. | 03-20-2014 |
20140080309 | DIFFERENTIAL SILICON OXIDE ETCH - A method of etching exposed silicon oxide on patterned heterogeneous structures is described and includes a gas phase etch created from a remote plasma etch. The remote plasma excites a fluorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents combine with water vapor. Reactants thereby produced etch the patterned heterogeneous structures to remove two separate regions of differing silicon oxide at different etch rates. The methods may be used to remove low density silicon oxide while removing less high density silicon oxide. | 03-20-2014 |
20140080310 | SILICON-CARBON-NITRIDE SELECTIVE ETCH - A method of etching exposed silicon-nitrogen-and-carbon-containing material on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor and an oxygen-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the exposed regions of silicon-nitrogen-and-carbon-containing material. The plasma effluents react with the patterned heterogeneous structures to selectively remove silicon-nitrogen-and-carbon-containing material from the exposed silicon-nitrogen-and-carbon-containing material regions while very slowly removing selected other exposed materials. The silicon-nitrogen-and-carbon-containing material selectivity results partly from the presence of an ion suppression element positioned between the remote plasma and the substrate processing region. The ion suppression element controls the number of ionically-charged species that reach the substrate. The methods may be used to selectively remove silicon-nitrogen-and-carbon-containing material at a faster rate than exposed silicon oxide or exposed silicon nitride. | 03-20-2014 |
20140099794 | RADICAL CHEMISTRY MODULATION AND CONTROL USING MULTIPLE FLOW PATHWAYS - Systems and methods are described relating to semiconductor processing chambers. An exemplary chamber may include a first remote plasma system fluidly coupled with a first access of the chamber, and a second remote plasma system fluidly coupled with a second access of the chamber. The system may also include a gas distribution assembly in the chamber that may be configured to deliver both the first and second precursors into a processing region of the chamber, while maintaining the first and second precursors fluidly isolated from one another until they are delivered into the processing region of the chamber. | 04-10-2014 |
20140134842 | DRY ETCH PROCESS - A method for conformal dry etch of a liner material in a high aspect ratio trench is achieved by depositing or forming an inhomogeneous passivation layer which is thicker near the opening of a trench bat thinner deep within the trench. The methods described herein use a selective etch following formation of the inhomogeneous passivation layer. The selective etch etches liner material faster than the passivation material. The inhomogeneous passivation layer suppresses the etch rate of the selective etch near the top of the trench (where it would otherwise be fastest) and gives the etch a head start deeper in the trench (where it would otherwise be slowest). This method may also find utility in removing bulk material uniformly from within a trench. | 05-15-2014 |
20140141621 | DRY-ETCH SELECTIVITY - A method of etching exposed patterned heterogeneous structures is described and includes a remote plasma etch formed from a reactive precursor. The plasma power is pulsed rather than left on continuously. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents selectively remove one material faster than another. The etch selectivity results from the pulsing of the plasma power to the remote plasma region, which has been found to suppress the number of ionically-charged species that reach the substrate. The etch selectivity may also result from the presence of an ion suppression element positioned between a portion of the remote plasma and the substrate processing region. | 05-22-2014 |
20140154889 | DRY-ETCH FOR SELECTIVE TUNGSTEN REMOVAL - Methods of selectively etching tungsten relative to silicon-containing films (e.g. silicon oxide, silicon carbon nitride and (poly)silicon) as well as tungsten oxide are described. The methods include a remote plasma etch formed from a fluorine-containing precursor and/or hydrogen (H | 06-05-2014 |
20140166617 | NON-LOCAL PLASMA OXIDE ETCH - A method of etching exposed titanium oxide on heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor. Plasma effluents from the remote plasma are flawed into a substrate processing region where the plasma effluents may combine with a nitrogen-containing precursor such as an amine (N:) containing precursor. Reactants thereby produced etch, the patterned heterogeneous structures with high titanium oxide selectivity while the substrate is at elevated temperature. Titanium oxide etch may alternatively involve supplying a fluorine-containing precursor and a source of nitrogen-and-hydrogen-containing precursor to the remote plasma. The methods may be used to remove titanium oxide while removing little or no low-K dielectric, polysilicon, silicon nitride or titanium nitride. | 06-19-2014 |
20140179111 | SELECTIVE TITANIUM NITRIDE ETCHING - Methods of etching exposed titanium nitride with respect to other materials on patterned heterogeneous structures are described, and may include a remote plasma etch formed from a fluorine-containing precursor. Precursor combinations including plasma effluents from the remote plasma are flowed into a substrate processing region to etch the patterned structures with high titanium nitride selectivity under a variety of operating conditions. The methods may be used to remove titanium nitride at faster rates than a variety of metal, nitride, and oxide compounds. | 06-26-2014 |
20140199850 | DRY-ETCH FOR SELECTIVE OXIDATION REMOVAL - Methods of selectively etching tungsten oxide relative to tungsten, silicon oxide, silicon nitride and/or titanium nitride are described. The methods include a remote plasma etch formed from a fluorine-containing precursor and/or hydrogen (H | 07-17-2014 |
20140256131 | SELECTIVE TITANIUM NITRIDE REMOVAL - Methods are described herein for selectively etching titanium nitride relative to dielectric films, which may include, for example, alternative metals and metal oxides lacking in titanium and/or silicon-containing films (e.g. silicon oxide, silicon carbon nitride and low-K dielectric films). The methods include a remote plasma etch formed from a chlorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the titanium nitride. The plasma effluents react with exposed surfaces and selectively remove titanium nitride while very slowly removing the other exposed materials. The substrate processing region may also contain a plasma to facilitate breaking through any titanium oxide layer present on the titanium nitride. The plasma in the substrate processing region may be gently biased relative to the substrate to enhance removal rate of the titanium oxide layer. | 09-11-2014 |
20140262038 | PROCESSING SYSTEMS AND METHODS FOR HALIDE SCAVENGING - Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional processing capabilities in combination chamber designs. The methods may provide for the limiting, prevention, and correction of aging defects that may be caused as a result of etching processes performed by system tools. | 09-18-2014 |
20140271097 | PROCESSING SYSTEMS AND METHODS FOR HALIDE SCAVENGING - Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional processing capabilities in combination chamber designs. The methods may provide for the limiting, prevention, and correction of aging defects that may be caused as a result of etching processes performed by system tools. | 09-18-2014 |
20140273406 | PROCESSING SYSTEMS AND METHODS FOR HALIDE SCAVENGING - Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional processing capabilities in combination chamber designs. The methods may provide for the limiting, prevention, and correction of aging defects that may be caused as a result of etching processes performed by system tools. | 09-18-2014 |
20140273481 | PROCESSING SYSTEMS AND METHODS FOR HALIDE SCAVENGING - Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional processing capabilities in combination chamber designs. The methods may provide for the limiting, prevention, and correction of aging defects that may be caused as a result of etching processes performed by system tools. | 09-18-2014 |
20140273488 | PROCESSING SYSTEMS AND METHODS FOR HALIDE SCAVENGING - Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional processing capabilities in combination chamber designs. The methods may provide for the limiting, prevention, and correction of aging defects that may be caused as a result of etching processes performed by system tools. | 09-18-2014 |
20140273489 | PROCESSING SYSTEMS AND METHODS FOR HALIDE SCAVENGING - Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional processing capabilities in combination chamber designs. The methods may provide for the limiting, prevention, and correction of aging defects that may be caused as a result of etching processes performed by system tools. | 09-18-2014 |
20140273491 | DRY-ETCH FOR SILICON-AND-CARBON-CONTAINING FILMS - A method of etching exposed silicon-and-carbon-containing material on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor and an oxygen-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the exposed regions of silicon-and-carbon-containing material. The plasmas effluents react with the patterned heterogeneous structures to selectively remove silicon-and-carbon-containing material from the exposed silicon-and-carbon-containing material regions while very slowly removing other exposed materials. The silicon-and-carbon-containing material selectivity results partly from the presence of an ion suppression element positioned between the remote plasma and the substrate processing region. The ion suppression element reduces or substantially eliminates the number of ionically-charged species that reach the substrate. The methods may be used to selectively remove silicon-and-carbon-containing material at more than twenty times the rate of silicon oxide. | 09-18-2014 |
20140308816 | SELECTIVE ETCH OF SILICON BY WAY OF METASTABLE HYDROGEN TERMINATION - Methods of etching exposed silicon on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor and a hydrogen-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the exposed regions of silicon. The plasmas effluents react with the patterned heterogeneous structures to selectively remove silicon while very slowly removing other exposed materials. The silicon selectivity results, in part, from a preponderance of hydrogen-containing precursor in the remote plasma which hydrogen terminates surfaces on the patterned heterogeneous structures. A much lower flow of the fluorine-containing precursor progressively substitutes fluorine for hydrogen on the hydrogen-terminated silicon thereby selectively removing silicon from exposed regions of silicon. The silicon selectivity also results from the presence of an ion suppressor positioned between the remote plasma and the substrate processing region. The ion suppressor reduces or substantially eliminates the number of ionically-charged species that reach the substrate. The methods may be used to selectively remove silicon far faster than silicon oxide, silicon nitride and a variety of metal-containing materials. | 10-16-2014 |
20140308818 | CONFORMAL OXIDE DRY ETCH - A method of etching silicon oxide from a trench is described which allows more homogeneous etch rates up and down the sides of the trench. One disclosed method includes a sequential introduction of (1) a hydrogen-containing precursor and then (2) a fluorine-containing precursor into a substrate processing region. The temperature of the substrate is low during each of the two steps in order to allow the reaction to proceed and form solid residue by-product. A second disclosed method reverses the order of steps (1) and (2) but still forms solid residue by-product. The solid residue by-product is removed by raising the temperature in a subsequent sublimation step regardless of the order of the two steps. | 10-16-2014 |
20150079797 | SELECTIVE ETCH OF SILICON NITRIDE - A method of etching silicon nitride on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor and a nitrogen-and-oxygen-containing precursor. Plasma effluents from two remote plasmas are flowed into a substrate processing region where the plasma effluents react with the silicon nitride. The plasmas effluents react with the patterned heterogeneous structures to selectively remove silicon nitride while very slowly removing silicon, such as polysilicon. The silicon nitride selectivity results partly from the introduction of fluorine-containing precursor and nitrogen-and-oxygen-containing precursor using distinct (but possibly overlapping) plasma pathways which may be in series or in parallel. | 03-19-2015 |
Patent application number | Description | Published |
20080199282 | CLUSTER TOOL ARCHITECTURE FOR PROCESSING A SUBSTRATE - Embodiments generally provide an apparatus and method for processing substrates using a multi-chamber processing system (e.g., a cluster tool). In one embodiment, the cluster tool is adapted to perform a track lithography process in which a photosensitive material is applied to a substrate, patterned in a stepper/scanner, and then removed in a developing process completed in the cluster tool. In one embodiment of the cluster tool, substrates are grouped together in groups of two or more for transfer or processing to improve system throughput, reduce the number of moves a robot has to make to transfer a batch of substrates between the processing chambers, and thus increase system reliability. Embodiments also provide for a method and apparatus that are used to increase the reliability of the substrate transfer process to reduce system down time. | 08-21-2008 |
20080216077 | SOFTWARE SEQUENCER FOR INTEGRATED SUBSTRATE PROCESSING SYSTEM - Embodiments of the invention generally provide apparatus and method for scheduling a process sequence to achieve maximum throughput and process consistency in a cluster tool having a set of constraints. One embodiment of the present invention provides a method for scheduling a process sequence comprising determining an initial individual schedule by assigning resources to perform the process sequence, calculating a fundamental period, detecting resource conflicts in a schedule generated from the individual schedule and the fundamental period, and adjusting the individual schedule to remove the resource conflicts. | 09-04-2008 |
20080223293 | CLUSTER TOOL ARCHITECTURE FOR PROCESSING A SUBSTRATE - A cluster tool for processing a substrate includes a cassette and a processing module including a first process chamber that is configured to perform a chill process on a substrate, a second processing chamber that is configured to perform a bake process on the substrate, and an input chamber. The first processing chamber, the second processing chamber, and the input chamber are substantially adjacent to each other. The processing modules also includes a robot that is configured to receive the substrate in the input chamber and transfer and position the substrate in the first processing chamber and second processing chamber. The robot includes a robot blade, an actuator, and a heat exchanging device. The heat exchanging device includes a chilled transfer assembly. The cluster tool also includes a 6-axis articulated robot configured to transfer the substrate between the cassette and the input chamber. | 09-18-2008 |
20090064928 | CLUSTER TOOL ARCHITECTURE FOR PROCESSING A SUBSTRATE - Embodiments generally provide an apparatus and method for processing substrates using a multi-chamber processing system (e.g., a cluster tool) that has an increased system throughput, increased system reliability, substrates processed in the cluster tool have a more repeatable wafer history, and also the cluster tool has a smaller system footprint. In one embodiment, the cluster tool is adapted to perform a track lithography process in which a substrate is coated with a photosensitive material, is then transferred to a stepper/scanner, which exposes the photosensitive material to some form of radiation to form a pattern in the photosensitive material, which is then removed in a developing process completed in the cluster tool. In track lithography type cluster tools, since the chamber processing times tend to be rather short, and the number of processing steps required to complete a typical track system process is large, a significant portion of the time it takes to process a substrate is taken up by the processes of transferring the substrates in a cluster tool between the various processing chambers. In one embodiment of the cluster tool, the cost of ownership, is reduced by grouping substrates together and transferring and processing the substrates in groups of two or more to improve system throughput, and reduces the number of moves a robot has to make to transfer a batch of substrates between the processing chambers, thus reducing wear on the robot and increasing system reliability. In one aspect of the invention, the substrate processing sequence and cluster tool are designed so that the substrate transferring steps performed during the processing sequence are only made to chambers that will perform the next processing step in the processing sequence. Embodiments also provide for a method and apparatus that are used to improve the coater chamber, the developer chamber, the post exposure bake chamber, the chill chamber, and the bake chamber process results. Embodiments also provide for a method and apparatus that are used to increase the reliability of the substrate transfer process to reduce system down time. | 03-12-2009 |
20090064929 | CLUSTER TOOL ARCHITECTURE FOR PROCESSING A SUBSTRATE - Embodiments generally provide an apparatus and method for processing substrates using a multi-chamber processing system (e.g., a cluster tool) that has an increased system throughput, increased system reliability, substrates processed in the cluster tool have a more repeatable wafer history, and also the cluster tool has a smaller system footprint. In one embodiment, the cluster tool is adapted to perform a track lithography process in which a substrate is coated with a photosensitive material, is then transferred to a stepper/scanner, which exposes the photosensitive material to some form of radiation to form a pattern in the photosensitive material, which is then removed in a developing process completed in the cluster tool. In track lithography type cluster tools, since the chamber processing times tend to be rather short, and the number of processing steps required to complete a typical track system process is large, a significant portion of the time it takes to process a substrate is taken up by the processes of transferring the substrates in a cluster tool between the various processing chambers. In one embodiment of the cluster tool, the cost of ownership is reduced by grouping substrates together and transferring and processing the substrates in groups of two or more to improve system throughput, and reduces the number of moves a robot has to make to transfer a batch of substrates between the processing chambers, thus reducing wear on the robot and increasing system reliability. In one aspect of the invention, the substrate processing sequence and cluster tool are designed so that the substrate transferring steps performed during the processing sequence are only made to chambers that will perform the next processing step in the processing sequence. Embodiments also provide for a method and apparatus that are used to improve the coater chamber, the developer chamber, the post exposure bake chamber, the chill chamber, and the bake chamber process results. Embodiments also provide for a method and apparatus that are used to increase the reliability of the substrate transfer process to reduce system down time. | 03-12-2009 |
20090067956 | CLUSTER TOOL ARCHITECTURE FOR PROCESSING A SUBSTRATE - Embodiments generally provide an apparatus and method for processing substrates using a multi-chamber processing system (e.g., a cluster tool) that has an increased system throughput, increased system reliability, substrates processed in the cluster tool have a more repeatable wafer history, and also the cluster tool has a smaller system footprint. In one embodiment, the cluster tool is adapted to perform a track lithography process in which a substrate is coated with a photosensitive material, is then transferred to a stepper/scanner, which exposes the photosensitive material to some form of radiation to form a pattern in the photosensitive material, which is then removed in a developing process completed in the cluster tool. In track lithography type cluster tools, since the chamber processing times tend to be rather short, and the number of processing steps required to complete a typical track system process is large, a significant portion of the time it takes to process a substrate is taken up by the processes of transferring the substrates in a cluster tool between the various processing chambers. In one embodiment of the cluster tool, the cost of ownership, is reduced by grouping substrates together and transferring and processing the substrates in groups of two or more to improve system throughput, and reduces the number of moves a robot has to make to transfer a batch of substrates between the processing chambers, thus reducing wear on the robot and increasing system reliability. In one aspect of the invention, the substrate processing sequence and cluster tool are designed so that the substrate transferring steps performed during the processing sequence are only made to chambers that will perform the next processing step in the processing sequence. Embodiments also provide for a method and apparatus that are used to improve the coater chamber, the developer chamber, the post exposure bake chamber, the chill chamber, and the bake chamber process results. Embodiments also provide for a method and apparatus that are used to increase the reliability of the substrate transfer process to reduce system down time. | 03-12-2009 |
20120180983 | CLUSTER TOOL ARCHITECTURE FOR PROCESSING A SUBSTRATE - The present invention generally provides a cluster tool for processing a substrate. In one embodiment, the cluster tool comprises at least one processing rack, which comprises a first plurality of substrate processing chambers that are positioned adjacent to each other and aligned in a first direction, a second plurality of substrate processing chambers that are positioned adjacent to each other and adjacent to at least one of the first plurality of substrate processing chambers, the second plurality of substrate processing chambers being positioned in a second direction relative to the first direction, a first shuttle robot movable in the first direction for moving substrates between each of the first plurality of substrate processing chambers, and a second shuttle robot movable in the second direction for moving substrates between each of the second plurality of substrate processing chambers. | 07-19-2012 |
20120320361 | CLUSTER TOOL ARCHITECTURE FOR PROCESSING A SUBSTRATE - Embodiments of the invention generally include a robot assembly comprising a robot operable to position a substrate at one or more points within a plane, and a motion assembly having a motor operable to position the robot in a direction generally parallel to a first direction. The motion assembly comprises a robot support interface having the robot coupled thereto, and one or more walls that form an interior region in which the motor is enclosed. The walls define an elongated opening through which the robot support interface travels, and the motor is operable to move the robot support interface laterally in the elongated opening. The motion assembly further comprises one or more fan assemblies that are in fluid communication with the interior region. The fan assemblies are operable to create a subatmospheric pressure in the interior region thereby causing gas to flow through the elongated opening into the interior region. | 12-20-2012 |
Patent application number | Description | Published |
20080198920 | 3D VIDEO ENCODING - A stereo 3D video frame includes left and right components that are combined to produce a stereo image. For a given amount of distortion, the left and right components may have different impacts on perceptual visual quality of the stereo image due to asymmetry in the distortion response of the human eye. A 3D video encoder adjusts an allocation of coding bits between left and right components of the 3D video based on a frame-level bit budget and a weighting between the left and right components. The video encoder may generate the bit allocation in the rho (ρ) domain. The weighted bit allocation may be derived based on a quality metric that indicates overall quality produced by the left and right components. The weighted bit allocation compensates for the asymmetric distortion response to reduce overall perceptual distortion in the stereo image and thereby enhance or maintain visual quality. | 08-21-2008 |
20110069152 | 2D to 3D video conversion - A method for real-time 2D to 3D video conversion includes receiving a decoded 2D video frame having an original resolution, downscaling the decoded 2D video frame into an associated 2D video frame having a lower resolution, and segmenting objects present in the downscaled 2D video frame into background objects and foreground objects. The method also includes generating a background depth map and a foreground depth map for the downscaled 2D video frame based on the segmented background and foreground objects, and deriving a frame depth map in the original resolution based on the background depth map and the foreground depth map. The method further includes providing a 3D video frame for display at a real-time playback rate. The 3D video frame is generated in the original resolution based on the frame depth map. | 03-24-2011 |
20120213409 | DECODER-SIDE REGION OF INTEREST VIDEO PROCESSING - The disclosure is directed to decoder-side region-of-interest (ROI) video processing. A video decoder determines whether ROI assistance information is available. If not, the decoder defaults to decoder-side ROI processing. The decoder-side ROI processing may estimate the reliability of ROI extraction in the bitstream domain. If ROI reliability is favorable, the decoder applies bitstream domain ROI extraction. If ROI reliability is unfavorable, the decoder applies pixel domain ROI extraction. The decoder may apply different ROI extraction processes for intra-coded (I) and inter-coded (P or B) data. The decoder may use color-based ROI generation for intra-coded data, and coded block pattern (CBP)-based ROI generation for inter-coded data. ROI refinement may involve shape-based refinement for intra-coded data, and motion- and color-based refinement for inter-coded data. | 08-23-2012 |
20120287233 | PERSONALIZING 3DTV VIEWING EXPERIENCE - A method for personalized video depth adjustment includes receiving a video frame, obtaining a frame depth map based on the video frame, and determining content genre of the video frame by classifying content of the video frame into one or more categories. The method also includes identifying a user viewing the video frame, retrieving depth preference information for the user from a user database, and deriving depth adjustment parameters based on the content genre and the depth preference information for the user. The method further includes adjusting the frame depth map based on the depth adjustment parameters, and providing a 3D video frame for display at a real-time playback rate on a user device of the user. The 3D video frame is generated based on the adjusted frame depth map. | 11-15-2012 |
20130081081 | Least Click TV - A system for minimizing interactions with at least an input mechanism, comprising at least a management server communicatively coupled to at least a user endpoint device, the user endpoint device comprising at least a display, an input mechanism, and a transponder mechanism configured to communicate data related to interactions with the input mechanism and displayed content, at least one storage device configured to store data based on content displayed on the display, interactions with the input mechanism, and content available for viewing, and at least one processor configured to use software to process the data such that a configuration of content data is prepared for display and the configuration is derived from at least the interactions with the input mechanism and the configuration is designed to minimize additional user interactions with the input mechanism to select the prepared content data. | 03-28-2013 |
20140028920 | USER-SENSING REMOTE CONTROL SYSTEM AND METHOD - A method is provided for a user-sensing remote control system including a TV and a remote control. The method includes obtaining sensing data from a plurality of sensors in the remote control related to a user of the remote control, pre-processing the sensing data, and determining a user identity space containing a plurality of possible user identities of the user using a predetermined statistical algorithm. The method also includes determining whether there is a dominant possible user identity; when it is determined that there is no dominant possible user identity, selecting one or more possible user identities from the user identity space and updating the user identity space until there is a dominant possible user identity; and when it is determined that there is a dominant possible user identity, presenting the dominant possible user identity as the identity of the user to other applications. | 01-30-2014 |
20140123179 | ZOOMABLE CONTENT RECOMMENDATION SYSTEM - A method is provided for a content recommendation module. The method includes receiving a user input related to viewing contents from a user and determining whether a recommendation pool containing a plurality of selected recommendation candidates has been changed corresponding to the input. The method also includes, when the recommendation pool has been changed, mapping the plurality of selected recommendation candidates in the changed recommendation pool into a hierarchical data structure with a plurality of levels such that each of the plurality of levels acts as a stage of a zoom operation on the selected recommendation candidates. Further, the method includes rendering mapped recommendation candidates from the plurality of levels to be displayed to the user. | 05-01-2014 |
20140181878 | METHOD AND SYSTEM FOR PROVIDING PERSONALIZED CONTENTS - A method is provided for a personalized content delivery system. The method includes detecting a viewing activity of at least one user of a content-presentation device capable of presenting multiple programs in one or more channels, and determining a plurality of user identities of the at least one user. The method also includes discovering available video contents for the at least one user based on the plurality of user identities, and determining personalized video contents for the at least one user by merging the plurality of user identities. Further, the method includes recommending the determined personalized video contents to the at least one user, and delivering the recommended personalized video contents to the at least one user such that the personalized video contents are presented on the content-presentation device. | 06-26-2014 |
Patent application number | Description | Published |
20080282982 | APPARATUS AND METHOD FOR DEPOSITION OVER LARGE AREA SUBSTRATES - The present invention generally relates to an inductively coupled plasma apparatus. When depositing utilizing a plasma generated from a showerhead, the plasma may not be evenly distributed to the edge of the substrate. By inductively coupling plasma to the chamber in an area corresponding to the chamber walls, the plasma distribution within the chamber may be evenly distributed and deposition upon the substrate may be substantially even. By vaporizing the processing gas prior to entry into the processing chamber, the plasma may also be even and thus contribute to an even deposition on the substrate. | 11-20-2008 |
20080292811 | CHAMBER IDLE PROCESS FOR IMPROVED REPEATABILITY OF FILMS - Methods and apparatus for improving the substrate-to-substrate uniformity of silicon-containing films deposited by vapor deposition of precursors vaporized from a liquid source on substrates in a chamber are provided. The methods include exposing a chamber to a processing step at a predetermined time that is after one substrate is processed in the chamber and is before the next substrate is processed in the chamber. In one aspect, the processing step includes introducing a flow of a silicon-containing precursor into the chamber for a period of time. In another aspect, the processing step includes exposing the chamber to a gas in the presence or absence of a plasma for a period of time. | 11-27-2008 |
20110290183 | Plasma Uniformity Control By Gas Diffuser Hole Design - Embodiments of a gas diffuser plate for distributing gas in a processing chamber are provided. The gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate. The gas passages include hollow cathode cavities at the downstream side to enhance plasma ionization. The depths, the diameters, the surface area and density of hollow cathode cavities of the gas passages that extend to the downstream end can be gradually increased from the center to the edge of the diffuser plate to improve the film thickness and property uniformity across the substrate. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can be created by bending the diffuser plate toward downstream side, followed by machining out the convex downstream side. Bending the diffuser plate can be accomplished by a thermal process or a vacuum process. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can also be created computer numerically controlled machining. Diffuser plates with gradually increasing diameters, depths and surface areas of the hollow cathode cavities from the center to the edge of the diffuser plate have been shown to produce improved uniformities of film thickness and film properties. | 12-01-2011 |
20120009347 | PRECISE TEMPERATURE CONTROL FOR TEOS APPLICATION BY HEAT TRANSFER FLUID - Embodiments of the invention generally provide a mixing block for mixing precursors and/or cleaning agent which has the advantage of maintaining the temperature and improving the mixing effect of the precursors, cleaning agent or the mixture thereof to eliminate the substrate-to-substrate variation, thereby providing improved process uniformity. | 01-12-2012 |
20120009356 | CONTAMINATION REDUCING LINER FOR INDUCTIVELY COUPLED CHAMBER - A method and apparatus for depositing a film through a plasma enhance chemical vapor deposition process is provided. In one embodiment, an apparatus includes a processing chamber having a coil disposed in the chamber and routed proximate the chamber wall. A liner is disposed over the coil and is protected by a coating of a material, wherein the coating of material has a film property similar to the liner. In one embodiment, the liner is a silicon containing material and is protected by the coating of the material. Thus, in the event that some of the protective coating of material is inadvertently sputtered, the sputter material is not a source of contamination if deposited on the substrate along with the deposited deposition film on the substrate. | 01-12-2012 |
20120027918 | SHOWERHEAD SUPPORT STRUCTURE FOR IMPROVED GAS FLOW - Embodiments of the present invention generally provide apparatus and methods for supporting a gas distribution showerhead in a processing chamber. In one embodiment, a gas distribution showerhead for a vacuum chamber is provided. The gas distribution showerhead comprises a body having a first side and a second side opposite the first side, and a plurality of gas passages formed through the body, the gas passages comprising a first bore formed in the first side that is fluidly coupled to a second bore formed in the second side by a restricting orifice, and a suspension feature formed in the first bore of at least one of the gas passages. | 02-02-2012 |
20130004681 | MINI BLOCKER PLATE WITH STANDOFF SPACERS - Embodiments of the present invention provide a plasma processing chamber having a mini blocker plate for delivering processing gas to a processing chamber and methods to use the mini blocker plate to improve uniformity. The blocker plate assembly comprising a mini blocker plate having a plurality of through holes, and two or more standoff spacers configured to position the mini blocker plate at a distance away from a blocker plate. | 01-03-2013 |
20130087783 | METHODS FOR DEPOSITING A SILICON CONTAINING LAYER WITH ARGON GAS DILUTION - Embodiments of the disclosure generally provide methods of forming a silicon containing layers in TFT devices. The silicon can be used to form the active channel in a LTPS TFT or be utilized as an element in a gate dielectric layer, a passivation layer or even an etch stop layer. The silicon containing layer is deposited by a vapor deposition process whereby an inert gas, such as argon, is introduced along with the silicon precursor. The inert gas functions to drive out weak, dangling silicon-hydrogen bonds or silicon-silicon bonds so that strong silicon-silicon or silicon-oxygen bonds remain to form a substantially hydrogen free silicon containing layer. | 04-11-2013 |
20130263782 | FLIP EDGE SHADOW FRAME - Device for processing a substrate are described herein. An apparatus for controlling deposition on a substrate can include a chamber comprising a shadow frame support, a substrate support comprising a substrate supporting surface, a shadow frame with a shadow frame body including a first support surface, a second support surface opposite the first surface, and a detachable lip connected with the shadow frame body. The detachable lip can include a support connection, a first lip surface facing the substrate, a second lip surface opposite the first lip surface, a first edge positioned over the first support surface, and a second edge opposite the first edge to contact the substrate. | 10-10-2013 |
20140251216 | FLIP EDGE SHADOW FRAME - Device for processing a substrate are described herein. An apparatus for controlling deposition on a substrate can include a chamber comprising a shadow frame support, a substrate support comprising a substrate supporting surface, a shadow frame with a shadow frame body including a first support surface, a second support surface opposite the first surface, and a detachable lip connected with the shadow frame body. The detachable lip can include a support connection, a first lip surface facing the substrate, a second lip surface opposite the first lip surface, a first edge positioned over the first support surface, and a second edge opposite the first edge to contact the substrate. | 09-11-2014 |
Patent application number | Description | Published |
20110237929 | BLADDER WALL THICKNESS MAPPING FOR TUMOR DETECTION - Disclosed is a method and apparatus for detection of a bladder wall tumor. Layers of a bladder wall are created by magnetic resonance imaging. A group of voxels having a lowest intensity is identified in a layer and an energy function modification enlarges the layer of the bladder wall. A partial volume image segmentation obtains tissue type mixture percentages in each voxel near inner and outer borders of the bladder wall in the layer of the bladder wall to obtain a bladder wall thickness. A range of uncertainty at the inner and outer borders of the bladder wall is obtained, and integration is performed of the bladder wall thickness along a path starting at a point on the outer border and ending at a corresponding point on the inner border. | 09-29-2011 |
20120033861 | SYSTEMS AND METHODS FOR DIGITAL IMAGE ANALYSIS - Systems and methods for implementing a hierarchical image recognition framework for classifying digital images are provided. The provided hierarchical image recognition framework utilizes a multi-layer approach to model training and image classification tasks. A first layer of the hierarchical image recognition framework generates first layer confidence scores, which are utilized by the second layer to produce a final recognition score. The provided hierarchical image recognition framework permits model training and image classification tasks to be performed more accurately and in a less resource intensive fashion than conventional single-layer image recognition frameworks. In some embodiments real-time operator guidance is provided for an image classification task. | 02-09-2012 |
20120033862 | SYSTEMS AND METHODS FOR SEGMENTING DIGITAL IMAGES - Methods and systems disclosed herein provide the capability to automatically process digital pathology images quickly and accurately. According to one embodiment, an digital pathology image segmentation task may be divided into at least two parts. An image segmentation task may be carried out utilizing both bottom-up analysis to capture local definition of features and top-down analysis to use global information to eliminate false positives. In some embodiments, an image segmentation task is carried out using a “pseudo-bootstrapping” iterative technique to produce superior segmentation results. In some embodiments, the superior segmentation results produced by the pseudo-bootstrapping method are used as input in a second segmentation task that uses a combination of bottom-up and top-down analysis. | 02-09-2012 |
20120087556 | DIGITAL IMAGE ANALYSIS USING MULTI-STEP ANALYSIS - Systems and methods for implementing a multi-step image recognition framework for classifying digital images are provided. The provided multi-step image recognition framework utilizes a gradual approach to model training and image classification tasks requiring multi-dimensional ground truths. A first step of the multi-step image recognition framework differentiates a first image region from a remainder image region. Each subsequent step operates on a remainder image region from the previous step. The provided multi-step image recognition framework permits model training and image classification tasks to be performed more accurately and in a less resource intensive fashion than conventional single-step image recognition frameworks. | 04-12-2012 |
20120093396 | DIGITAL IMAGE ANALYSIS UTILIZING MULTIPLE HUMAN LABELS - Systems and methods for implementing a multi-label image recognition framework for classifying digital images are provided. The provided multi-label image recognition framework utilizes an iterative, multiple analysis path approach to model training and image classification tasks. A first iteration of the multi-label image recognition framework generates confidence maps for each label, which are shared by the multiple analysis paths to update the confidence maps in subsequent iterations. The provided multi-label image recognition framework permits model training and image classification tasks to be performed more accurately than conventional single-label image recognition frameworks. | 04-19-2012 |
20120128237 | SUPERPIXEL-BOOSTED TOP-DOWN IMAGE RECOGNITION METHODS AND SYSTEMS - Systems and methods for implementing a superpixel boosted top-down image recognition framework are provided. The framework utilizes superpixels comprising contiguous pixel regions sharing similar characteristics. Feature extraction methods described herein provide non-redundant image feature vectors for classification model building. The provided framework differentiates a digitized image into a plurality of superpixels. The digitized image is characterized through image feature extraction methods based on the plurality of superpixels. Image classification models are generated from the extracted image features and ground truth labels and may then be used to classify other digitized images. | 05-24-2012 |
20120275703 | SUPERPIXEL SEGMENTATION METHODS AND SYSTEMS - Systems and methods for implementing a superpixel image segmentation technique using a boundary preserving distance metric are disclosed. The disclosed technique segments a digital image into superpixels comprising contiguous pixel regions sharing similar characteristics. Superpixel image segmentation techniques presented herein utilize a boundary preserving distance metric. A boundary preserving distance metric presented herein measures the similarity between two pixels of a digital image at least partially based on a boundary probability values of the two pixels and surrounding pixels. | 11-01-2012 |
20130243277 | FLOURESCENT DOT COUNTING IN DIGITAL PATHOLOGY IMAGES - Fluorescence in situ hybridization (FISH) enables the detection of specific DNA sequences in cell chromosomes by the use of selective staining. Due to the high sensitivity, FISH allows the use of multiple colors to detect multiple targets simultaneously. The target signals are represented as colored dots, and enumeration of these signals is called dot counting. Using a two-stage segmentation framework guarantees locating all potential dots including overlapped dots. | 09-19-2013 |
20130243289 | GRAPH CUTS-BASED INTERACTIVE SEGMENTATION OF TEETH IN 3-D CT VOLUMETRIC DATA - An interactive segmentation framework for 3-D teeth CT volumetric data enables a user to segment an entire dental region or individual teeth depending upon the types of user input. Graph cuts-based interactive segmentation utilizes a user's scribbles which are collected on several 2-D representative CT slices and are expanded on those slices. Then, a 3-D distance transform is applied to the entire CT volume based on the expanded scribbles. Bony tissue enhancement is added before feeding 3-D CT raw image data into the graph cuts pipeline. The segmented teeth area is able to be directly utilized to reconstruct a 3-D virtual teeth model. | 09-19-2013 |
20130243308 | INTEGRATED INTERACTIVE SEGMENTATION WITH SPATIAL CONSTRAINT FOR DIGITAL IMAGE ANALYSIS - An integrated interactive segmentation with spatial constraint method utilizes a combination of several of the most popular online learning algorithms into one and implements a spatial constraint which defines a valid mask local to the user's given marks. Additionally, both supervised learning and statistical analysis are integrated, which are able to compensate each other. Once prediction and activation are obtained, pixel-wised multiplication is conducted to fully indicate how likely each pixel belongs to the foreground or background. | 09-19-2013 |
20140270431 | CHARACTERIZING PATHOLOGY IMAGES WITH STATISTICAL ANALYSIS OF LOCAL NEURAL NETWORK RESPONSES - For digital pathology imaging, intelligent processing, such as automatic recognition or content-based retrieval, is one significant benefit that drives the wide application of this technology. Before any intelligent processing on pathology images, every image is converted into a feature vector which quantitatively capture its visual characteristics. An algorithm characterizing pathology images with statistical analysis of local responses of neural networks is described herein. The algorithm framework enables extracting sophisticated textural features that are well adapted to the image data of interest. | 09-18-2014 |
20140270432 | COMBINING INFORMATION OF DIFFERENT LEVELS FOR CONTENT-BASED RETRIEVAL OF DIGITAL PATHOLOGY IMAGES - Content-based retrieval of digital pathology images (DPI) is a fundamental component in an intelligent DPI processing and management system. One key issue of content-based DPI retrieval is how to represent an image as a feature vector, capturing its key information that is most relevant to the goal of retrieval. A unified framework of extracting information of different levels for DPI, namely low level color information, middle level texture information and high level diagnostic information is described herein. Such information from all the levels are integrated to the end of content-based DPI retrieval. | 09-18-2014 |
20140270496 | DISCRIMINATIVE DISTANCE WEIGHTING FOR CONTENT-BASED RETRIEVAL OF DIGITAL PATHOLOGY IMAGES - Content-based retrieval of digital pathology images (DPI) is a fundamental component in an intelligent DPI processing and management system. The fundamental procedure of the retrieval is evaluating the similarity between the query image and every image in the database with some distance function, and sorting of the latter based on their distances to the query. A novel approach to optimally combine a set of existing distance functions into a stronger distance that is suitable for retrieving DPI in a way respecting human perception of image similarity is described herein. | 09-18-2014 |
20140279755 | MANIFOLD-AWARE RANKING KERNEL FOR INFORMATION RETRIEVAL - A manifold-aware ranking kernel (MARK) for information retrieval is described herein. The MARK is implemented by using supervised and unsupervised learning. MARK is ranking-oriented such that the relative comparison formulation directly targets on the ranking problem, making the approach optimal for information retrieval. MARK is also manifold-aware such that the algorithm is able to exploit information from ample unlabeled data, which helps to improve generalization performance, particularly when there are limited number of labeled constraints. MARK is nonlinear: as a kernel-based approach, the algorithm is able to lead to a highly non-linear metric which is able to model complicated data distribution. | 09-18-2014 |
Patent application number | Description | Published |
20090053882 | KRYPTON SPUTTERING OF THIN TUNGSTEN LAYER FOR INTEGRATED CIRCUITS - A method of depositing a bilayer of tungsten over tungsten nitride by a plasma sputtering process in which krypton is used as the sputter working gas during the tungsten deposition. Argon may be used as the sputtering working gas during the reactive sputtering deposition of tungsten nitride. The beneficial effect of reduction of tungsten resistivity is increased when the thickness of the tungsten layer is less than 50 nm and further increased when less than 35 nm. The method may be used in forming a gate stack including a polysilicon layer over a gate oxide layer over a silicon gate region of a MOS transistor in which the tungsten nitride acts as a barrier. A plasma sputter chamber in which the invention may be practiced includes gas sources of krypton, argon, and nitrogen. | 02-26-2009 |
20090142512 | APPARATUS AND METHOD FOR DEPOSITING ELECTRICALLY CONDUCTIVE PASTING MATERIAL - A method and apparatus are described for reducing particle contamination in a plasma processing chamber. In one embodiment, a pasting disk is provided which includes a disk-shaped base of high-resistivity material that has an electrically conductive pasting material layer applied to a top surface of the base so that the pasting material layer partially covers the top surface of the base. The pasting disk is sputter etched to deposit conductive pasting material over a wide area on the interior surfaces of a plasma processing chamber while minimizing deposition on dielectric components that are used to optimize the sputter etch process during substrate processing. | 06-04-2009 |
20090215264 | PROCESS FOR SELECTIVE GROWTH OF FILMS DURING ECP PLATING - Methods of controlling deposition of metal on field regions of a substrate in an electroplating process are provided. In one aspect, a dielectric layer is deposited under plasma on the field region of a patterned substrate, leaving a conductive surface exposed in the openings. Electroplating on the field region is reduced or eliminated, resulting in void-free features and minimal excess plating. In another aspect, a resistive layer, which may be a metal, is used in place of the dielectric. In a further aspect, the surface of the conductive field region is modified to change its chemical potential relative to the sidewalls and bottoms of the openings. | 08-27-2009 |
20100330795 | Krypton Sputtering of Low Resistivity Tungsten - A method of depositing a bilayer of tungsten over tungsten nitride by a plasma sputtering process in which krypton is used as the sputter working gas during the tungsten deposition. Argon may be used as the sputtering working gas during the reactive sputtering deposition of tungsten nitride. The beneficial effect of reduction of tungsten resistivity is increased when the thickness of the tungsten layer is less than 50 nm and further increased when less than 35 nm. The method may be used in forming a gate stack including a polysilicon layer over a gate oxide layer over a silicon gate region of a MOS transistor in which the tungsten nitride acts as a barrier. A plasma sputter chamber in which the invention may be practiced includes gas sources of krypton, argon, and nitrogen. | 12-30-2010 |
20110303960 | LOW RESISTIVITY TUNGSTEN PVD WITH ENHANCED IONIZATION AND RF POWER COUPLING - Embodiments described herein provide a semiconductor device and methods and apparatuses of forming the same. The semiconductor device includes a substrate having a source and drain region and a gate electrode stack on the substrate between the source and drain regions. The gate electrode stack includes a conductive film layer on a gate dielectric layer, a refractory metal nitride film layer on the conductive film layer, a silicon-containing film layer on the refractory metal nitride film layer, and a tungsten film layer on the silicon-containing film layer. In one embodiment, the method includes positioning a substrate within a processing chamber, wherein the substrate includes a source and drain region, a gate dielectric layer between the source and drain regions, and a conductive film layer on the gate dielectric layer. The method also includes depositing a refractory metal nitride film layer on the conductive film layer, depositing a silicon-containing film layer on the refractory metal nitride film layer, and depositing a tungsten film layer on the silicon-containing film layer. | 12-15-2011 |
20130139878 | USE OF A1 BARRIER LAYER TO PRODUCE HIGH HAZE ZNO FILMS ON GLASS SUBSTRATES - Embodiments of the invention provide a method for forming a solar cell including forming a layer comprising alumina on a substrate and forming a transparent conductive layer on the layer comprising alumina. The method may also include forming a transparent conductive seed layer on the layer comprising alumina and forming a transparent conductive bulk layer on the transparent conductive seed layer. Embodiments of the invention also include photovoltaic devices having a substrate, a layer comprising alumina adjacent to the substrate, a zinc oxide-containing transparent conductive seed layer adjacent to the layer comprising alumina, and a zinc oxide-containing transparent conductive bulk layer adjacent the zinc oxide-containing transparent conductive seed layer. | 06-06-2013 |
20140042016 | LOW RESISTIVITY TUNGSTEN PVD WITH ENHANCED IONIZATION AND RF POWER COUPLING - Embodiments described herein provide a semiconductor device and methods and apparatuses of forming the same. The semiconductor device includes a substrate having a source and drain region and a gate electrode stack on the substrate between the source and drain regions. In one embodiment, the method includes positioning a substrate within a processing chamber, wherein the substrate includes a source and drain region, a gate dielectric layer between the source and drain regions, and a conductive film layer on the gate dielectric layer. The method also includes depositing a refractory metal nitride film layer on the conductive film layer, depositing a silicon-containing film layer on the refractory metal nitride film layer, and depositing a tungsten film layer on the silicon-containing film layer. | 02-13-2014 |