Patent application number | Description | Published |
20080198681 | MULTIPLE PORT MEMORY WITH PRIORITIZED WORD LINE DRIVER AND METHOD THEREOF - A multiple port memory has a word line driver that provides a word line signal to access a first write port of a multiple port memory cell in an array of multiple port memory cells during a write operation. A first logic circuit has a first input for receiving a first port selection signal, a second input for receiving a disable signal, and an output. A buffer circuit has an input coupled to the output of the first logic circuit, and an output for providing the word line signal. The disable signal is asserted to prevent the word line driver from accessing the first write port when a second write port of the multiple port memory cell is accessed during the write operation and the second write port has a higher priority than the first write port. | 08-21-2008 |
20080222361 | PIPELINED TAG AND INFORMATION ARRAY ACCESS WITH SPECULATIVE RETRIEVAL OF TAG THAT CORRESPONDS TO INFORMATION ACCESS - A cache design is described in which corresponding accesses to tag and information arrays are phased in time, and in which tags are retrieved (typically speculatively) from a tag array without benefit of an effective address calculation subsequently used for a corresponding retrieval from an information array. In some exploitations, such a design may allow cycle times (and throughput) of a memory subsystem to more closely match demands of some processor and computation system architectures. In some cases, phased access can be described as pipelined tag and information array access, though strictly speaking, indexing into the information array need not depend on results of the tag array access. Our techniques seek to allow early (indeed speculative) retrieval from the tag array without delays that would otherwise be associated with calculation of an effective address eventually employed for a corresponding retrieval from the information array. Speculation can be resolved using the eventually calculated effective address or using separate functionality. In some embodiments, we use calculated effective addresses for way selection based on tags retrieved from the tag array. | 09-11-2008 |
20080291768 | BITCELL WITH VARIABLE-CONDUCTANCE TRANSFER GATE AND METHOD THEREOF - A memory device comprises a bit cell comprising a bit storage device, a first word line, a second word line, and a first transfer gate to connect the bit storage device to a bit line. The first transfer gate is configurable to at least four conductance states based on a state of the first word line and a state of the second word line. The memory device further comprises control logic to configure, for an access to the bit cell, the state of the first word line and the state of the second word line based on an access type of the access. | 11-27-2008 |
20080304347 | ONE TIME PROGRAMMABLE ELEMENT SYSTEM IN AN INTEGRATED CIRCUIT - A system with a repairable memory array having redundant memory cells to replace one or more defective memory cells that are detected after fabrication. The system also includes non memory array circuits having circuitry that may adjust one or more operating parameters such as operating current, operating voltage, resistance, capacitance, timing characteristics and an operating mode. A set of one time programmable elements can be used to selectively store information for modifying operating parameters and replacing the defective memory cells with redundant memory cells. | 12-11-2008 |
20090251173 | SINGLE-SUPPLY, SINGLE-ENDED LEVEL CONVERSION CIRCUIT FOR AN INTEGRATED CIRCUIT HAVING MULTIPLE POWER SUPPLY DOMAINS - A circuit comprises first, second, third, and fourth transistors. The first transistor has a first current electrode, a control electrode for receiving an input signal, and a second current electrode. The second transistor has a first current electrode coupled to the second current electrode of the first transistor for providing an output signal, a control electrode coupled to the control electrode of the first transistor, and a second current electrode coupled to a first power supply voltage terminal. The third transistor has a first current electrode coupled to a second power supply voltage terminal, a control electrode, and a second current electrode coupled to the first current electrode of the first transistor. The fourth transistor has a first current electrode coupled to the control electrode of the third transistor, a control electrode coupled to the control electrodes of the first and second transistors, and a second current electrode coupled to the control electrode of the first transistor. | 10-08-2009 |
20100072816 | INTEGRATED CIRCUIT HAVING BOOSTED ARRAY VOLTAGE AND METHOD THEREFOR - An integrated circuit comprises a global power supply conductor, a plurality of circuit blocks, a plurality of voltage converters, and control logic. The global power supply conductor is configured to distribute a supply voltage. The circuit blocks are selectively coupled to the global power supply conductor. The plurality of voltage converters are coupled to the global power supply conductor. An output voltage of individual voltage converters of the plurality of voltage converters are selectively coupled to one or more of the plurality of circuit blocks. The control logic is configured to control the selective coupling of at least one of the supply voltage and the output voltage of individual voltage converters of the plurality of voltage converters to corresponding ones of the plurality of circuit blocks. Also, the control logic controls a magnitude of the output voltage of individual voltage converters of the plurality of voltage converters. | 03-25-2010 |
20100188909 | MEMORY HAVING NEGATIVE VOLTAGE WRITE ASSIST CIRCUIT AND METHOD THEREFOR - A method of writing data to a selected column of a memory includes selecting a first column. The data writing is initiated by applying a logic high to a first bit line of the first column and a first potential to a second bit line of the first column that is lower than the logic high. The first potential is removed and a second potential is applied to the second bit line. The second potential is less than the first potential. The first potential may be ground, and the second potential may be a negative voltage. Reducing the write voltage for the bit line that is receiving a logic low improves its ability to be written. By first bringing the logic low to the first potential, which may be ground, and then further reducing the applied voltage, the requirements on the source of the second potential are reduced. | 07-29-2010 |
20100191990 | VOLTAGE-BASED MEMORY SIZE SCALING IN A DATA PROCESSING SYSTEM - A memory has bits that fail as power supply voltage is reduced to reduce power and/or increase endurance. The bits become properly functional when the power supply voltage is increased back to its original value. With the reduced voltage, portions of the memory that include non-functional bits are not used. Much of the memory may remain functional and use is retained. When the voltage is increased, the portions of the memory that were not used because of being non-functional due to the reduced power supply voltage may then be used again. This is particularly useful in a cache where the decrease in available memory due to power supply voltage reduction can be implemented as a reduction in the number of ways. Thus, for example an eight way cache can simply be reduced to a four way cache when the power is being reduced or endurance increased. | 07-29-2010 |
20100246298 | INTEGRATED CIRCUIT MEMORY HAVING ASSISTED ACCESS AND METHOD THEREFOR - A memory and method for access the memory are provided. A first test is used to test memory elements to determine a lowest power supply voltage at which all the memory elements will operate to determine a weak memory element. Redundancy is used to substitute a redundant memory element for the weak memory element. The weak memory element is designated as a test element. In response to receiving a request to change a power supply voltage provided to the memory elements, a second test is used to test the test element to determine if the test element will function correctly at a new power supply voltage. If the test element passes the second test, the memory elements are accessed at the new power supply voltage. If the test element fails the second test, the memory elements are accessed using an access assist operation. | 09-30-2010 |
20100277990 | INTEGRATED CIRCUIT HAVING MEMORY REPAIR INFORMATION STORAGE AND METHOD THEREFOR - A storage unit on an integrated circuit stores information that identifies a circuit on the integrated circuit, a selected operating condition, and a required operating configuration for the circuit for the selected operating condition. The manner of operating the circuit is changed to the required operating configuration in response to an operating condition of the circuit changing to the selected operating condition. This allows for efficiently identifying the few circuits that do not meet specified requirements based on a reduction in, for example, operating voltage, and altering their operation in order to meet the specified requirements relative to the reduced operating voltage without having to do so for the vast majority of the circuits that are able to meet the requirements at the lowered operating voltage. | 11-04-2010 |
20100302837 | MEMORY WITH READ CYCLE WRITE BACK - A memory has a first bit line, a second bit line, and a word line. A memory cell is coupled to the word line and the first and second bit lines. A sense amplifier has a first input, a second input, a first output, and a second output. A pair of coupling transistors includes a first transistor and a second transistor. In one embodiment, the first transistor is coupled between the first bit line and the first input of the sense amplifier and the second transistor is coupled between the second bit line and the second input of the sense amplifier. A write back circuit is coupled to an output of the sense amplifier. The write back circuit writes back to the memory cell a value read from the memory cell during a read cycle. | 12-02-2010 |
20100309736 | SRAM WITH READ AND WRITE ASSIST - A memory includes an SRAM bitcell including a pair of cross-coupled inverters, wherein a first inverter of the pair includes a first device having a body and a second inverter of the pair includes a second device having a body. A first selection circuit has a first input coupled to a first supply voltage terminal, a second input coupled to a second supply voltage terminal, and an output coupled to a first current electrode of the first device and to a first current electrode of the second device. A second selection circuit has a first input coupled to the first supply voltage terminal, a second input coupled to the second supply voltage terminal, and an output coupled to the body of each of the first and second devices. A word line coupled to the SRAM bitcell is driven by a word line driver coupled to the first supply voltage terminal. | 12-09-2010 |
20100322027 | MEMORY USING MULTIPLE SUPPLY VOLTAGES - A memory has a method of operating that includes performing operations of a first type and a second type. A first voltage is coupled to a power supply node of a first memory cell of a memory array during a first operation of the first type. The first voltage is decoupled from the power supply node in response to terminating the first operation of the first type so as to allow the power supply node to drift. If the power supply node drifts to a second voltage, a power supply source is coupled to the power supply node. This is useful in reducing power in the circuit that produces the first voltage. | 12-23-2010 |
20110095799 | FLIP-FLOP HAVING SHARED FEEDBACK AND METHOD OF OPERATION - A method of operating a circuit includes receiving a first data signal at a first node. The first node is coupled to a second node to couple the first data signal to the second node. After coupling the first node to the second node, an inversion is enabled from the second node to a third node. An inversion from the third node to the fourth node is provided. After the enabling the inversion from the second node to the third node, the first node is decoupled from the second node. After the enabling the inversion from the second node to the third node, the second node is coupled to the third node. An inversion from the fourth node to the third node is enabled and the second node is decoupled from the fourth node. | 04-28-2011 |
20110095800 | FLIP-FLOP HAVING SHARED FEEDBACK AND METHOD OF OPERATION - A method of operating a circuit includes receiving a first data signal at a first node. The first node is coupled to a second node to couple the first data signal to the second node. After coupling the first node to the second node, the second node is coupled to a third node to couple the first data signal to the third node. The first node is decoupled from the second node and a first step of latching the first data signal at the third node is performed, wherein the first step of latching is through the second node while the second node is coupled to the third node. The second node is decoupled from the third node and a second step of latching is performed wherein the first data signal latched at the third node while the second node is decoupled from the third node. | 04-28-2011 |
20110239069 | SEQUENTIAL DIGITAL CIRCUITRY WITH TEST SCAN - A digital scan chain system having test scan has a plurality of flip-flop modules, each of the plurality of flip-flop modules having a first data bit input, a second data bit input, a test bit input, a clock input, a first data bit output, a second data bit output, and a test bit output. The test bit output of a first flip-flop module is directly connected to the test bit input of a second flip-flop module with no intervening circuitry. First and second multiplexed master/slave flip-flops are directly serially connected. A clocked latch is coupled to the output of the second multiplexed master/slave flip-flop and provides the test bit output. The clocked latch is clocked only during a test mode to save power. | 09-29-2011 |
20130046928 | Memory Management Unit Tag Memory - A method and data processing system for accessing an entry in a memory array by placing a tag memory unit ( | 02-21-2013 |
20140266396 | INTEGRATED CLOCK GATER (ICG) USING CLOCK CASCODE COMPLIMENTARY SWITCH LOGIC - Inventive aspects include an integrated clock gater (ICG) circuit having clocked complimentary voltage switched logic (CICG) that delivers high performance while maintaining low power consumption characteristics. The CICG circuit provides a small enable setup time and a small clock-to-enabled-clock delay. A significant reduction in clock power consumption is achieved in both enabled and disabled modes, but particularly in the disabled mode. Complimentary latches work in tandem to latch different voltage levels at different nodes depending on the voltage level of the received clock signal and whether or not an enable signal is asserted. An inverter takes the voltage level from one of the nodes, inverts it, and outputs a gated clock signal. The gated clock signal may be active or quiescent depending on the various voltage levels. Time is “borrowed” from an evaluation window and added to a setup time to provide greater tolerances for receiving the enable signal. | 09-18-2014 |
20140306745 | FLIP-FLOP HAVING SHARED FEEDBACK AND METHOD OF OPERATION - A method of operating a circuit includes receiving a first data signal at a first node. The first node is coupled to a second node to couple the first data signal to the second node. After coupling the first node to the second node, an inversion is enabled from the second node to a third node. An inversion from the third node to the fourth node is provided. After the enabling the inversion from the second node to the third node, the first node is decoupled from the second node. After the enabling the inversion from the second node to the third node, the second node is coupled to the third node. An inversion from the fourth node to the third node is enabled and the second node is decoupled from the fourth node. | 10-16-2014 |