Cheng, Kaohsiung County
Chia-Pin Cheng, Kaohsiung County TW
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20090135333 | LCD with ambient light sense function and method thereof - The invention discloses an LCD with an ambient light sense function and its method. The method compraises the step of: coupling a capacitor to a source electrode of a thin film transistor; calculating a transmission time which required by a potential change from the reduction of electric charges; and finally, calculating an intensity of the ambient light according to the transmission time. The invention further discloses an ambient light sense circuit having a thin film transistor, a capacitor and a read-out switch. As the ambient light changes, a leakage current of the thin film transistor is changed accordingly, and the transmission time which required by the potential change is therefore changed. The read-out switch transmits said potential to a data read-out line in order to calculate the intensity of the ambient light from the transmission time. The LCD of this invention includes a plurality of capacitors, a plurality of read-out switches and a processing module. | 05-28-2009 |
Chi-Cheng Cheng, Kaohsiung County TW
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20090300223 | METHOD FOR COMMUNICATION BETWEEN AN ELECTRONIC DEVICE AND A TARGET INPUT/OUTPUT DEVICE IN A SECURE DIGITAL INPUT/OUTPUT CARD THROUGH A SECURE DIGITAL INTERFACE, AND SYSTEM FOR IMPLEMENTING THE SAME - A method for communication between an electronic device and a target input/output (I/O) device in a secure digital input/output (SDIO) card through a secure digital (SD) interface is provided. The SDIO card includes a SDIO controller. The method includes the steps of: configuring the electronic device to write an I/O command packet at a designated address accessible to both the electronic device and the SDIO controller, the I/O command packet including a command for controlling the operation of the target I/O device; and configuring the SDIO controller to control the operation of the target I/O device according to the I/O command packet written at the designated address. | 12-03-2009 |
20100070658 | METHOD OF COMMUNICATION BETWEEN A PROTOCOL-PROCESSING UNIT AND AN INPUT/OUTPUT (I/O) DEVICE THROUGH A DEVICE INTERFACE CONTROLLER - A method of communication between a protocol-processing unit and an input/output (I/O) device through a device interface controller includes configuring the protocol-processing unit to write command/message data in a predefined write file, and configuring the device interface controller to translate the command/message data written in the predefined write file into a corresponding command/message and to transmit the corresponding command/message thus translated to the I/O device. A system that includes the protocol-processing unit and the device interface controller is also disclosed. | 03-18-2010 |
Fong-Yu Cheng, Kaohsiung County TW
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20080299047 | Method for preparation of water-soluble and dispersed iron oxide nanoparticles and application thereof - The present invention relates to a process for preparing water-soluble and dispersed iron oxide (Fe | 12-04-2008 |
Ming-Yuan Cheng, Kaohsiung County TW
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20110005325 | Design and fabrication method of a flexible capacitive pressure sensor - The invention relates to a capacitive pressure sensor and a method for fabricating thereof. The capacitive pressure sensor comprises a cover, a plurality of first electrode, a substrate and a plurality of second electrode. The cover owns an upper wall and a plurality of side walls. The plurality of first electrode is disposed on the inside of the upper wall of the cover. The side walls of the cover are connected to the substrate to form a space. The plurality of second electrode is disposed on the substrate. The plurality of first electrode and the plurality of second electrode are both in the space. In the invention, the material for cover, the plurality of first electrodes and the substrate are all flexible polymeric material. | 01-13-2011 |
Po-Lun Cheng, Kaohsiung County TW
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20080233722 | METHOD OF FORMING SELECTIVE AREA COMPOUND SEMICONDUCTOR EPITAXIAL LAYER - A method of forming a selective area semiconductor compound epitaxy layer is provided. The method includes the step of using two silicon-containing precursors as gas source for implementing a process of manufacturing the selective area semiconductor compound epitaxy layer, so as to form a semiconductor compound epitaxy layer on an exposed monocrystalline silicon region of a substrate. | 09-25-2008 |
20090108291 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A semiconductor device including a gate structure, two doped regions, and two buffer layers is provided. The gate structure is disposed on a substrate. The two doped regions are made of boron doped silicon germanium (SiGeB) and are disposed in the substrate at both sides of the gate structure. The two buffer layers are made of carbon doped silicon germanium (SiGeC) and are respectively disposed between the two doped regions and the substrate. | 04-30-2009 |
Tseng-Jen Cheng, Kaohsiung County TW
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20100299925 | METHOD FOR FORMING A GEAR - A method for forming a gear, including the following steps: first obtaining a billet, then carrying out a backward extrusion process of the billet to form a forged billet with a blind hole by using a mold, and the forged billet has an appropriate axial length and an appropriate radial length. Then, a precise piercing process is carried out to remove the solid billet portion remained in the blind hole of the forged billet to form a through hole. Then, trimming of the through hole is carried out to form a high-precision inner hole, and positioning is carried out based on the high-precision inner hole to implement a pressing process of an outer tooth shape of the forged billet to form the gear. | 12-02-2010 |
Yu-Chin Cheng, Kaohsiung County TW
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20110264256 | PROCESS CONTROL METHOD AND PROCESS CONTROL SYSTEM - A process control method is provided for controlling a tool which processes a deposition process on a plurality of wafers for a process time. The process control method comprises receiving a quantity of the wafers and calculating a deposition compensation time necessary for the deposition process performed on the wafers by the tool according to the quantity of the wafers and a deposition loading effect coefficient corresponding to the deposition process. The deposition loading effect coefficient is retrieved from a database according to a process program of the deposition process. According to the deposition compensation time, the process time is adjusted to be an adjusted process time. The deposition process is performed on the wafers for the adjusted process time by the tool. | 10-27-2011 |
Yung-Feng Cheng, Kaohsiung County TW
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20100036644 | METHOD FOR SELECTIVELY AMENDING LAYOUT PATTERNS - A method to selectively amend a layout pattern is disclosed. First, a layout pattern including at least a first group and a second group is provided, wherein each one of the first group and the second group respectively includes multiple members. Second, a simulation procedure and an amendment procedure are respectively performed on all the members of the first group and the second group to obtain an amended first group and an amended second group. Then, the amended first group and the amended second group are verified as being on target or not. Afterwards, the layout pattern including the on target amended first group and the on target amended second group is output. | 02-11-2010 |