Patent application number | Description | Published |
20080224236 | METAL GATE ELECTRODE FOR SEMICONDUCTOR DEVICES - A gate electrode for semiconductor devices, the gate electrode comprising a mixture of a metal having a work function of about 4 eV or less and a metal nitride. | 09-18-2008 |
20090134453 | Non-Volatile Memory Device with Improved Immunity to Erase Saturation and Method for Manufacturing Same - A non-volatile memory device having a control gate on top of the second dielectric (interpoly or blocking dielectric), at least a bottom layer of the control gate in contact with the second dielectric being constructed in a material having a predefined high work-function and showing a tendency to reduce its work-function when in contact with a group of certain high-k materials after full device fabrication. At least a top layer of the second dielectric, separating the bottom layer of the control gate from the rest of the second dielectric, is constructed in a predetermined high-k material, chosen outside the group for avoiding a reduction in the work-function of the material of the bottom layer of the control gate. In the manufacturing method, the top layer is created in the second dielectric before applying the control gate. | 05-28-2009 |
20090184376 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A dual work function semiconductor device and method for fabricating the same are disclosed. In one aspect, a device includes a first and second transistor on a first and second substrate region. The first and second transistors include a first gate stack having a first work function and a second gate stack having a second work function respectively. The first and second gate stack each include a host dielectric, a gate electrode comprising a metal layer, and a second dielectric capping layer therebetween. The second gate stack further has a first dielectric capping layer between the host dielectric and metal layer. The metal layer is selected to determine the first work function. The first dielectric capping layer is selected to determine the second work function. | 07-23-2009 |
20090206417 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A method for manufacturing a dual work function semiconductor device is disclosed. In one aspect, a method starts by forming a host dielectric layer over a first and second region of a substrate. A first dielectric capping layer is formed overlying the host dielectric layer on the first and second region and later selectively removed to expose an underlying layer on the first region. A Hf-based dielectric capping layer is formed overlying the underlying layer on the first region and the first dielectric capping layer on the second region. The Hf-based dielectric capping layer is selected to have a healing effect on the exposed surface of the underlying layer on the first region. A control electrode is formed overlaying the Hf-based dielectric capping layer on the first region and on the second region. | 08-20-2009 |
20090261424 | METHOD FOR FABRICATING A DUAL WORKFUNCTION SEMICONDUCTOR DEVICE AND THE DEVICE MADE THEREOF - A dual workfunction semiconductor device and a device made thereof is disclosed. In one aspect, the device includes a first gate stack in a first region and a second gate stack in a second region. The first gate stack has a first effective workfunction, and the second gate stack has a second effective workfunction different from the first effective workfunction. The first gate stack includes a first gate dielectric capping layer, a gate dielectric host layer, a first metal gate electrode layer, a barrier metal gate electrode, a second gate dielectric capping layer, and a second metal gate electrode. The second gate stack includes a gate dielectric host layer, a first metal gate electrode, a second gate dielectric capping layer, and a second metal gate electrode. | 10-22-2009 |
20090283835 | METHOD FOR FABRICATING A DUAL WORKFUNCTION SEMICONDUCTOR DEVICE AND THE DEVICE MADE THEREOF - A method for manufacturing a dual workfunction semiconductor device and the device made thereof are disclosed. In one aspect, the method includes manufacturing a first transistor in a first region and a second transistor in a second region of a substrate, the first transistor including a first gate stack, the first gate stack having a first gate dielectric capping layer and a first metal gate electrode layer. The second gate stack is similar to the first gate stack. The method includes applying a first thermal budget to the first gate dielectric capping layer and a second thermal budget to the second gate dielectric capping material to tune the workfunction of the first and second gate stack, the first thermal budget being smaller than the second thermal budget such that after the thermal treatment the first and the second gate stack have different work functions. | 11-19-2009 |
20110183509 | Non-Volatile Memory Device with Improved Immunity to Erase Saturation and Method for Manufacturing Same - A non-volatile memory device having a control gate on top of the second dielectric (interpoly or blocking dielectric), at least a bottom layer of the control gate in contact with the second dielectric being constructed in a material having a predefined high work-function and showing a tendency to reduce its work-function when in contact with a group of certain high-k materials after full device fabrication. At least a top layer of the second dielectric, separating the bottom layer of the control gate from the rest of the second dielectric, is constructed in a predetermined high-k material, chosen outside the group for avoiding a reduction in the work-function of the material of the bottom layer of the control gate. In the manufacturing method, the top layer is created in the second dielectric before applying the control gate. | 07-28-2011 |
20110256682 | Multiple Deposition, Multiple Treatment Dielectric Layer For A Semiconductor Device - A method is provided for fabricating a semiconductor device. A semiconductor substrate is provided. A first high-k dielectric layer is formed on the semiconductor substrate. A first treatment is performed on the high-k dielectric layer. In an embodiment, the treatment includes a UV radiation in the presence of O | 10-20-2011 |
20130052815 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A dual work function semiconductor device and method for fabricating the same are disclosed. In one aspect, a device includes a first and second transistor on a first and second substrate region. The first and second transistors include a first gate stack having a first work function and a second gate stack having a second work function respectively. The first and second gate stack each include a host dielectric, a gate electrode comprising a metal layer, and a second dielectric capping layer therebetween. The second gate stack further has a first dielectric capping layer between the host dielectric and metal layer. The metal layer is selected to determine the first work function. The first dielectric capping layer is selected to determine the second work function. | 02-28-2013 |
Patent application number | Description | Published |
20080302675 | POLYMER-BASED CARDIOVASCULAR BIOSENSORS, MANUFACTURE, AND USES THEREOF - A flexible, polymer-based biosensor deployable into the arterial system which can assess shear stress in the arterial geometry in the presence of time-varying component of blood flow. Also, a method of fabricating a biosensor which may be used for in vivo procedures, involving the sequential depositing onto a substrate of a silicon dioxide layer, a metal heating element on the silicon dioxide layer, and a biocompatible polymer on the heating element, followed by etching the polymer layer to provide holes to allow for electrode contact with the heating element. A second metal layer is then deposited to form electrodes, followed by a second biocompatible polymer layer to form the device structure and removing the fabricated biosensor from the substrate by etching the substrate. In addition, a method of determining intravascular shear stress by measuring the temperature, flow rate and pressure of a bodily fluid with a biocompatible biosensor is disclosed. | 12-11-2008 |
20120297859 | Film Bulk Acoustic Wave Resonator-Based Ethanol and Acetone Sensors and Methods Using the Same - The present invention relates generally to the detection of alcohol. The present invention relates more particularly to the film bulk acoustic wave resonator-based devices, and their use in the sensing of ethanol and/or acetone. One aspect of the invention is a method for detecting ethanol, acetone or both in a gaseous sample including: providing a film bulk acoustic wave resonator having a zinc oxide piezoelectric layer; exposing the film bulk acoustic wave resonator to the gaseous sample; determining the resonant frequency of the film bulk acoustic wave resonator; and determining the concentration of ethanol, the concentration of acetone, or both in the gaseous sample using the resonant frequency of the film bulk acoustic wave resonator. | 11-29-2012 |
20120326050 | Film Bulk Acoustic Wave Resonator-Based High Energy Radiation Detectors and Methods Using the Same - The present invention relates generally to the detection of high energy radiation. The present invention relates more particularly to the film bulk acoustic wave resonator-based devices, and their use in the detection of high energy radiation. One aspect of the invention is a method for detecting high energy radiation, the method comprising providing a film bulk acoustic wave resonator having a zinc oxide piezoelectric layer in substantial contact with a dielectric layer; exposing the film bulk acoustic wave resonator to the high energy radiation; determining the resonant frequency of the film bulk acoustic wave resonator; and determining the dose of high energy radiation using the resonant frequency of the film bulk acoustic wave resonator. | 12-27-2012 |